• Korean Journal of Materials Research
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• v.31 no.10
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• pp.546-551
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• 2021

To improve ferroelectric properties of PZT, many studies have attempted to fabricate dense PZT films. The AD process has an advantage for forming dense ceramic films at room temperature without any additional heat treatment in low vacuum. Thick films coated by AD have a higher dielectric breakdown strength due to their higher density than those coated using conventional methods. To improve the breakdown strength, glass (SiO₂-Al₂O₃-Y₂O₃, SAY) is mixed with PZT powder at various volume ratios (PZT-xSAY, x = 0, 5, 10 vol%) and coating films are produced on silicon wafers by AD method. Depending on the ratio of PZT to glass, dielectric breakdown strength and energy storage efficiency characteristics change. Mechanical impact in the AD process makes the SAY glass more viscous and fills the film densely. Compared to pure PZT film, PZT-SAY film shows an 87.5 % increase in breakdown strength and a 35.3 % increase in energy storage efficiency.

• Korean Journal of Metals and Materials
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• v.48 no.4
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• pp.353-356
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• 2010

InSb thin films with a thickness of approximately 300 nm were prepared using single- and double-source vacuum evaporation methods and their structures and properties were investigated in terms of a heat treatment procedure. The double-source InSb films, prepared by the alternate stacking of In and Sb, were polycrystalline in structure and included small amounts of unreacted In and Sb phases. After annealing at elevated temperatures below the melting point of InSb (525$^{\circ}C$), the films changed into the InSb phase and were found to contain small amounts of unreacted In. The formation capability of the InSb compound was slightly lower for multilayer films than for single-layer films. The electrical and galvanomagnetic properties were found to be strongly related to the microstructures of the films. The maximum value of the Hall mobility and the magnetoresistance were determined to be $4.3{\times}10^3cm^2$/Vs and 70%, respectively, for the single-layer films, while these values for the alternately stacked films were respectively $2.9{\times}10^3cm^2$/Vs and 29% for the $[Sb(2.5)/In(2.5)]_{60}$ films, and $3.1{\times}10^3cm^2$/Vs and 10% for the $[Sb(150)/In(150)]_1$ films.

• Journal of Technologic Dentistry
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• v.27 no.1
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• pp.9-17
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• 2005

The use of titanium alloys as biomaterials is increasing due to their superior biocompatibility and enhanced corrosion resistance compared to conventional stainless steels and cobalt-based alloys. Ti-6Al-4V ($\alpha+\beta$type) alloy instead of pure titanium ($\alpha$type) is being widely used as biomaterials has some characteristics such as high fatigue strength, tensile strength and corrosion resistance. But it has been reported recently that the vanadium element expresses cytotoxicity and the aluminium element is related with dementia of Alzheimer type and neurotoxicity. In order to overcome their detrimental effects, $\beta$-phase stabilizer Nb was chosen in the present study. This paper was described the influence of phase changes of Ti-Nb alloys on mechanical properties. Ti-3wt.%Nb($\alpha$type),Ti-20wt.%Nb($\alpha+\beta$type) and Ti-40wt.%Nb($\beta$type) alloys were melted by vacuum arc furnace. The specimens were homogenized at 1050$^{\circ}C$ for 24hr and were then hot rolled to 50% reduction. Each alloys were solution heat treated at $\beta$ zone and $\alpha+\beta$ zone after homogenization and then were aged. The mechanical properties of Ti alloys were analysed by hardness test, tensile test, elongation test and SEM test. The results can be summarized as follows: 1) The higher hardness value of $\alpha+\beta$type alloy was obtained compared to the, $\alpha,\beta$type alloys. 2) The aged treated showed better hardness compared to the solution heat treated, homogenized. 3) In the case of solution and aging treatment at $\beta$region, the $\alpha+\beta$type alloy showed the most highest tensile strength and $\beta$type alloy showed the best elongation.

• Journal of Powder Materials
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• v.17 no.2
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• pp.142-147
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• 2010

The ultrafine titanium carbonitride ($TiC_xN_y$) particles below 100 nm in mean size, including various carbon and nitrogen contents (x=0.55~0.9, y=0.1~0.5), were successfully synthesized by new Mg-thermal reduction process. Nanostructured sub-stoichiometric titanium carbide ($TiC_x$) particles were initially produced by the magnesium reduction of gaseous $TiCl_4+x/2C_2Cl_4$ at $890^{\circ}C$ and post heat treatments in vacuum were performed for 2 hrs to remove residual magnesium and magnesium chloride mixed with $TiC_x$. Finally, well C/N-controled $TiC_xN_y$ phases were successfully produced by nitrification heat treatment under normal $N_2$ gas atmosphere at $1150^{\circ}C$ for 2 hrs. The values of purity, mean particle size and oxygen content of produced particles were about 99.3%, 100 nm and 0.2 wt.%, respectively.

• Applied Science and Convergence Technology
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• v.23 no.5
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• pp.248-253
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• 2014

Air Gap Membrane Distillation (AGMD) is one of several technologies that can be used to solve problems fresh water availability. AGMD exhibits several advantages, including low conductive heat loss and higher thermal efficiency, due to the presence of an air gap between the membrane and condensation wall. A previous study by Bhardwaj found that the condensation surface properties (materials and contact angle) affected the total collected fresh water in the solar distillation process. However, the process condition differences between solar distillation and AGMD might result in different condensation phenomena. In contrast, N. Miljkovic showed that a hydrophobic surface has higher condensation heat transfer. Moreover, to the best of our knowledge, there is no study that investigates the effect of condensation surface properties in AGMD to overall process performance (i.e. flux and thermal efficiency). Thus, in this study, we treated the AGMD condensation surface to make it hydrophobic or hydrophilic. The condensation surface could be made hydrophilic by immersing and boiling plate in deionized (DI) water, which caused the formation of hydrophilic aluminum hydroxide (AlOOH) nanostructures. Afterwards, the treated plate was coated using hexamethyldisiloxane (HMDSO) through plasma-enhanced chemical vapor deposition (PECVD). The result indicated that condensation surface properties do not affect the permeate flux or thermal efficiency significantly. In general, the permeate flux and thermal efficiency for the treated plates were lower than those of the non-treated plate (pristine). However, at a 1 mm and 3 mm air gap, the treated plate outperformed the non-treated plate (pristine) in terms of permeate flux. Therefore, although surface wettability effect was not significant, it still provided a little influence.

• Journal of the Korean Electrochemical Society
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• v.2 no.4
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• pp.237-241
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• 1999

The characteristics of copper thin films and via hole filling capability were investigated by pulsed electrodeposition method. Especially, the effects of additives on the properties of copper thin films were studied. Copper films, which were deposited by pulsed electrodeposition using commercial additives, had low tensile stress value under 83.4 MPa and high preferred Cu (111) texture. Via holes with $0.25{\mu}m$ in diameter and 6 : 1 aspect ratio were successfully filled without any defects by superfilling. It was observed that copper microstructure deformed by twining. After heat treatment at $500^{\circ}C$ for 1 k in vacuum furnace, grain size was 1 or 2 times as large as film thickness and the bamboo structure was formed. Heat treated copper films showed good resistivities of $1.8\~2.0{\mu}{\Omega}{\cdot}cm$.

• Korean Journal of Materials Research
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• v.31 no.3
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• pp.156-161
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• 2021

Cr-Si based alloys are not only excellent in corrosion resistance at high temperatures, but also have good wear resistance due to the formation of Cr3Si phase, therefore they are promising as metallic coating materials. Aluminum is often added to Cr-Si alloys to improve the oxidation resistance through which stable alumina surface film is formed. On the other hand, due to the addition of aluminum, various Al-containing phases may be formed and may negatively affect the heat resistance of the Cr-Si-Al alloys, so detailed investigation is required. In this study, two Cr-Si-Al alloys (high-Si & high-Al) were prepared in the form of cast ingots through a vacuum arc melting process and the microstructural changes after high temperature heating process were investigated. In the case of the cast high-Si alloy, a considerable amount of Cr3Si phase was formed, and its hardness was significantly higher than that of the cast high-Al alloy. Also, Al-rich phases (with the high Al/Cr ratio) were not found much compared to the high-Al alloy. Meanwhile, it was observed that the amount of the Al-rich phases reduced by the annealing heat treatment for both alloys. In the case of the high temperature heating at 1,400 ℃, no significant microstructural change was observed in the high Si alloy, but a little more coarse and segregated AlCr phases were found in the high Al alloy compared to the cast state.

• Journal of the Korean Vacuum Society
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• v.18 no.3
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• pp.203-207
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• 2009

Copper is known as a replacement for aluminum wire which is used for semiconductor. Because specific resistance of Cu ($1.67{\mu}{\Omega}$-cm) is lower than that of Al ($2.66{\mu}{\Omega}$-cm), Cu reduce RC delay time. Although melting point of Cu($1085^{\circ}C$) is higher than melting point of Al, Cu have characteristic to easily react with Silicon(Si) in low temperature, and it isn't good at adhesive strength with Si. For above these reason, research of diffusion barrier to prevent reaction between Cu and Si and to raise adhesive strength is steadily advanced. Our study group have researched on W-C-N (tungsten-carbon-nitrogen) Diffusion barrier for preventing diffusion of Cu through semiconductor. By recent studies, It's reported that W-C-N diffusion barrier can even precent Cu and Si diffusing effectively at high temperature. In this treatise, we vaporized different proportion of N into diffusion barrier to research Cu's Electromigration based on the results and studied surface hardness in the heat process using nano scale indentation system. We gain that diffusion barrier containing nitrogen is more stable for Cu's electromigration and has stronger surface hardness in heat treatment process.

• Journal of the Korean Vacuum Society
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• v.17 no.1
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• pp.23-27
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• 2008

We have investigated the effect of annealing on the structural and optical properties of polycrystalline Ga doped ZnO (GZO) films grown on glass substrates by RF-magnetron sputter at room temperature. The structural and optical properties of as-grown GZO films were characterized and then samples were annealed at $400{\sim}600^{\circ}C$ in $N_2$ ambient for 30, 60 minutes, respectively. The field emission scanning electron microscopy (FE-SEM) and X-ray diffraction (XRD) were used to measure the grain size and the crystalline quality of the films. We found that the crystalline quality was improved and the grain size tends to be increased. The optical properties of GZO thin films were analyzed by UV-VIS-NIR spectrophotometers. It is found that optical properties of thin films are increased by annealing and can be used for transparent electrode application. We believe that the appropriate post-growth heat treatment could be contributed to the improvement of GZO-based devices.

• Journal of the Korean institute of surface engineering
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• v.29 no.6
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• pp.766-772
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• 1996

Undoped $SnO_x$ thin films were deposited on Si(100) substrate by using reactive ioassisted deposition technique (R-IAD). In order to investigate the effect of initial oxygen content and heat treatment on the oxidation state and crystalline structure of tin oxide films, $SnO_x$ thin films were post-annealed at 400~$600^{\circ}C$ for 1 hr. in a vacuum ~$5 \times 10^{-3}$ -3/ Torr or were directly deposited on the substrate of $400^{\circ}C$ and the relative arrival ration ($Gamma$) of oxygen ion to Sn metal varied from 0.025 to 0.1, i.e., average impinging energy ($E_a$) form 25 to 100 eV/atom. As $E_a$ increased, the composition ratio of $N_ON{sn}$ changed from 1.25 to 1.93 in post-annealing, treatment and 1.21 to 1.87 in in-situ substrate heating. In case of post-annealing, the oxidation from SnO to $SnO_2$ was closely related to initial oxygen contents and post-annealing temperature, and the perfect oxidation of $SnO_2$ in the film was obtained at higher than $E_a$=75 eV/atom and $600^{\circ}C$. The temperature for perfect oxidation of $SnO_2$ was reduced as low as $400^{\circ}C$ through in-situ substrate heating. The variation of the chemical state of $SnO_x$ thin films with changing $E_a$'s and heating method were also observed by Auger electron spectroscopy.