• Proceedings of the Korean Vacuum Society Conference
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• 2003.02a
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• pp.198-198
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• 2003

• Journal of the Korean Vacuum Society
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• v.12 no.S1
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• pp.46-48
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• 2003

The modification of metal surface by ion implantation with MEVVA ion implanter and thin film deposition with filtered vacuum arc plasma device is introduced in this paper. The combination of ion implantation and thin film deposition is proved as a better method to improve properties of metal surface.

• Proceedings of the KIEE Conference
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• 1999.11d
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• pp.1054-1056
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• 1999

It is necessary to install the arc generation facility to obtain the important technology for the design of breakers and switches, and the improvement of their performance and reliability. With this facility it is possible to study the characteristics of Arc in air/gas/vacuum insulation environment. The arc generation facility briefly consists of capacitor bank which can charge enormous energy, an air-core reactor, and several measurement equipments. This facility can simulates the arc phenomena in breakers and switches by means of generating high currents. In order to the protect electrode damage during the arcing time in arc extinguishing chamber, we installed auxiliary current source in addition to main capacitor bank, This auxiliary current source produces relatively small arc between electrodes before high current generation by main capacitor bank. Therefore it is possible to observe and measure the arcing phenomenon without damage of electrodes.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.140.2-140.2
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• 2013

Strong metal-support interaction effect is an important issue in determining the catalytic activity for heterogeneous catalysis. In this work, we report the catalytic activity of $Au/TiO_2$, $Au/Al_2O_3$, and $Au/Al_2O_3-CeO_2$ nanocatalysts under CO oxidation fabricated by arc plasma deposition (APD), which is a facile dry process with no organic materials involved. These catalytic materials were characterized by transmission electron microscopy (TEM), energy-dispersive X-ray spectroscopy (EDS) and $N_2$-physisorption. Catalytic activity of the materials has measured by CO oxidation using oxygen, as a model reaction, in a micro-flow reactor at atmospheric pressure. Using APD, the catalyst nanoparticles were well dispersed on metal oxide powder with an average particle size (3~10 nm). As for catalytic reactivity, the result shows $Au/Al_2O_3-CeO_2$ nanocatalyst has the highest catalytic activity among three samples in CO oxidation, and $Au/TiO_2$, and $Au/Al_2O_3$ in sequence. We discuss the effects of structure and metal-oxide interactions of the catalysts on catalytic activity.

• Journal of the Korean Vacuum Society
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• v.6 no.S1
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• pp.133-136
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• 1997

In this paper multi-arc plasma plating film equipment Bulat-6 and its technical characteristics were analyzed in detail. This machine is the first of its kind in China. Influential factors and reducing methods on microdroplets of titanium were investigated. By method of electromagnetic field control and ion beam enhanced deposition excellent titanium nitride film could be obtained. Bicrohardness and adhesion were 250Mpa and 6.5Kg respectively.

• Proceedings of the KIEE Conference
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• 1997.11a
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• pp.273-275
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• 1997

We fabricated the conventional silicon tips coated with a diamond-like carbon (DLC) film. The DLC films are prepared by the filtered cathodic vacuum arc (FCVA) technique. With increasing nitrogen content in DLC film, the work function($\phi$) and the turn-on voltage decrease and the emission current increases. This phenomenon is due to the fact that the Fermi-level moves to the conduction band by increasing nitrogen doping concentration. We have tested on the stability of the DLC film coated silicon tip during 2 hours at 500V.

• Proceedings of the KIEE Conference
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• 2002.07c
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• pp.1868-1870
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• 2002

최근 고전압/대전류 펄스파워응용이 점차 늘어나고 있다. 정전형 고전압/대전류용 펄스파워전원장치의 핵심인 폐스위치의 수요 또한 점차 증가 할 것으로 추정된다. 펄스파워전원장치의 안정적이고 신뢰성 있는 동작을 위해서는 주위 조건에 영향을 받지 않는 진공 스위치가 적합하다. 진공펌프, 챔버없이 사용이 간편하도록 sealed-off화되어야 한다. 본 논문에서는 챔버내에서 동작이 확인된 회전 아크형 진공 스위치를 유지전압 22[kV]. 첨두전류 150[kAp]의 사양으로 스위치를 sealed off 제작 및 이를 동작 시험한 결과에 대해 기술하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.457-457
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• 2012

We presented plasma processing using a DC Arc Plasmatron for diamond deposition on Al2O3 ceramic substrates. Plasma surface treatments were conducted to improve deposition condition before processing for diamond deposition. The Al2O3 ceramic substrates deposited, $5{\times}15mm^2$, were investigated by Scanning Electron Microscopy (SEM), Fourier Transform Infrared Spectroscopy (FTIR) and X-ray Diffraction (XRD). Properties of diamond (111), (220) and (311) peaks were shown in XRD. We identified nanocrystalline diamond films on substrates. The results showed that deposition rate was approximately $2.2{\mu}m/h$ after plasma surface treatments. Comparing the above result with a common processing, deposition rate was improved. Also, the surface condition was improved more than a common processing for diamond deposition on Al2O3 ceramic substrates.

• Nuclear Engineering and Technology
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• v.29 no.3
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• pp.181-185
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• 1997

The ion sources for induction linac driven heavy ion fusion were fabricated and their omittance characteristics were investigated. For to kinds of ion sources, i. e. a carbon vacuum arc ion source and a cusp field rf ion source, the emittance was measured with a double slit beam scanner. The required normalized omittance of an ion source for heavy ion fusion is 10$^{-7}$ - 5$\times$10$^{-7}$ $\pi$ m-rod, and the measured emittances of the ion beams from carbon vacuum arc ion source and cusp field rf ion source (Ne$^{+}$) were 2$\times$10$^{-6}$ $\pi$ m-rad and 4$\times$10$^{-7}$ $\pi$ m-rad, respectively.y.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2016.11a
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• pp.103.2-103.2
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• 2016

금속질화물 박막은 대표적인 고경도, 고내열성 박막이다. 박막의 두께는 기계적물성과 밀접한 상관관계가 있으며, 두께의 관리와 제어는 매우 중요하다. 3조 2배열의 증발원을 이용하여 Cathodic vacuum arc deposition(CVAD)법으로써 금속질화물 박막을 제조하였으며, 평균 두께 $4.38{\mu}m$, 표준편차 ${\pm}11.5%$ 박막들을 제조할 수 있었다. 증발원과 증발원 사이의 중첩이 되는 지점에 장착된 시편보다 각각의 증발원에서 평행한 위치에 장착된 시편에 코팅된 박막이 두꺼웠다.