• JSTS:Journal of Semiconductor Technology and Science
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• v.6 no.2
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• pp.68-73
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• 2006

We propose a damascene gate FinFET with Si nanocrystals implemented on bulk silicon wafer for low voltage flash memory device. The use of optimized SRON (Silicon-Rich Oxynitride) process allows a high degree of control of the Si excess in the oxide. The FinFET with Si nanocrystals shows high program/erase (P/E) speed, large $V_{TH}$ shifts over 2.5V at 12V/$10{\mu}s$ for program and -12V/1ms for erase, good retention time, and acceptable endurance characteristics. Si nanocrystal memory with damascene gate FinFET is a solution of gate stack and voltage scaling for future generations of flash memory device. Index Terms-FinFET, Si-nanocrystal, SRON(Si-Rich Oxynitride), flash memory device.

• Korean Journal of Materials Research
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• v.14 no.4
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• pp.235-238
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• 2004

The LT-MBE (low temperature molecular beam epitaxy) allows to dope GaAs with Mn over its solubility limit. A 75 urn thick GaMnAs layers are grown on a low temperature grown LT-GaAs buffer layer at a substrate temperature of $260^{\circ}C$ by varying Mn contents ranged from 0.03 to 0.05. The typical growth rate for GaMnAs layer is fixed at 0.97 $\mu\textrm{m}$/h and the V/III ratio is varied from 25 to 34. The electrical and magnetic properties are investigated by Hall effect and superconducting quantum interference device(SQUID) measurements, respectively. Double crystal X-ray diffraction(DCXRD) is also performed to investigate the crystallinity of GaMnAs layers. The $T_{c}$ of the $Ga_{l-x}$ /$Mn_{x}$ As films grown by LT-MBE are enhanced from 38 K to 65 K as x increases from 0.03 into 0.05 whereas the $T_{c}$ becomes lower to 45 K when the V/III ratio increases up to 34 at the same composition of x=0.05. This means that the ferromagnetic exchange coupling between Mn-ion and a hole is affected by the growth condition of the enhanced V/III ratio in which the excess-As and As-antisite defects may be easily incorporated into GaMnAs layer.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.61 no.2
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• pp.194-198
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• 2012

This paper describes flying inspection apparatus for 22.9kV distribution line. This apparatus is composed of multi-copter(more than 4 propellers), camcorder and remote controller. The existing inspections, such as hot-line inspection job and optical inspection method and distribution Line Checking Robot, have many restrictions. A electric working vehicle and hot-line job license are essential in hot-line inspection job. Besides its high cost, it can't be applied to the electric pole over 18m and road-blocked area. Optical method can't inspect upper side of electric facilities mounted on the electric pole. Robot method can't be applied to the corroded overhead earth wire and nothing of overhead earth wire. To solve the problems, in Korea Electric Power Co., we have applied flying inspection apparatus to the 22.9kV distribution line. The results of trial application show that this paper is practical and effective for the inspection technical method in 22.9kV distribution line

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.19 no.6
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• pp.22-28
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• 2005

The electrical characterstic of earth is the most dominant factor for grounding design and an earth is typically represented by a uniform medium with the specific earth resistivity, which is unique for a specific site. For a hand-working grounding design using a specific earth resistivity requires a process converting a real earth of complex medium into a simple uniform medium In this paper, we suggest a procedure to convert a multi-layered earth s into a simpler uniform earth for grounding design of Myanmar 500[kV] transmission towers.

• Korean Journal of Materials Research
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• v.15 no.3
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• pp.195-201
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• 2005

The $SnS_2,\;SnS_2:Cd$, and $SnS_2:Sb$ single crystals were grown by the chemical transport reaction method. The indirect optical energy band gap was found to be 2.348, 2.345, and 2.343 eV for the $SnS_2,\;SnS_2:Cd$, and $SnS_2:Sb$ single crystals, at 6 K respectively. The direct optical energy band gap was found to be 2.511, 2.505, and 2.503 eV f3r the $SnS_2,\;SnS_2:Cd$, and $SnS_2:Sb$ single crystals, at 6 K respectively The temperature dependence of the optical energy band gap was well fitted by the Varshni equation. Two photoluminescence emission peaks with the peak energy of 2.214 and 1.792 eV for $SnS_2$, 2.214 and 1.837 eV for $SnS_2:Cd$, and 2.214 and 1.818 eV the $SnS_2:Sb$ were observed. The emission peaks were described as originating from the donor-acceptor pair recombinations.

• Journal of Korea Foundry Society
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• v.39 no.6
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• pp.110-115
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• 2019

Recently, various studies have been conducted on additive manufacturing technology developed using metal materials. In this study, a numerical analysis was introduced to analyze the effects of the thermal deformation and residual stress which arise during the SLM (selective laser melting) manufacturing process. A phase-transformation mechanism is implemented with the use of the Ti-6Al-4V material, in which a solid-state phase transformation (SSPT) can be induced during a numerical analysis. In this case, the phase of the Ti-6Al-4V material changes from a powder to a solid state and then to the Martensite phase in sequence during heating and cooling steps. The numerical analysis during the SLM process was verified by comparing the results of tensile tests with those from the numerical analysis based on the SSPT material properties.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.18 no.8
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• pp.904-912
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• 2007

In this paper, a broadband 4-way power divider which can be used from 20 MHz to 500 MHz in the V/UHF band is designed using transmission-line transformer and ferrite toroid. A 4:1 impedance transformer is realized and this 4:1 transformer is connected with bridge-type 2-way dividers to form a 4-way rower divider, Insertion loss of about 6.8dB, isolation of less than -20dB, and return loss of less than -15dB in most band of interest are measured.

• Archives of Reconstructive Microsurgery
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• v.25 no.1
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• pp.15-18
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• 2016

Any types of burn injury that involve more than deep dermis often require reconstructive treatment. In gluteal region, V-Y fasciocutaneous advancement flap is frequently used to cover the defect. However, in case of large burn wounds, this kind of flap cannot provide adequate coverage because of the lack of normal surrounding tissues. We suggest V-Y adipofascial flap using the surrounding superficially damaged tissue. We present the case of a patient who was referred for full-thickness burn on gluteal region. We performed serial debridement and applied vacuum-assisted closure device to defective area as wound preparation for coverage. When healthy granulation tissue grew adequately, we covered the defect with surrounding V-Y adipofascial flap and the raw surface of the flap was then covered with split-thickness skin graft. We think the use of subcutaneous fat as an adipofascial flap to cover the deeper defect adjacent to the flap is an excellent alternative especially in huge defect with uneven depth varying from subcutaneous fat to bone exposure in terms of minimal donor site morbidity and reliability of the flap. Even if the flap was not intact, it was reuse of the adjacent tissue of the injured area, so it is relatively safe and applicable.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.60 no.1
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• pp.20-25
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• 2011

This paper analyzed the application of Superconducting Fault Current Limiter (SFCL) on 22.9 [kV] bus tie in a power distribution system. Commonly, the parallel operations of power main transformers offer a lot of merits. However, when a fault occurs in the parallel operation of power main transformer, the fault currents might exceed the interruption capacity of existing protective devices. To resolve this problem, thus, the SFCL has been studied as the fascinating device. In case that, Particularly, the SFCL could be installed to parallel operation of various power main transformers in power distribution system of the Korea Electric Power Corporation (KEPCO) on 22.9 [kV] bus tie, the effect of the resistance of SFCL could reduce the increased fault currents and meet the interruption capacity of existing protective devices by them. Therefore, we analyzed the effect of application and proposed the proper impedance of the R-type SFCL on 22.9 [kV] bus tie in a power distribution system using PSCAD/EMTDC.

• Journal of the Korea institute for structural maintenance and inspection
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• v.15 no.1
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• pp.254-262
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• 2011

The purpose of this study is the development of V shaped metallic damper, which is superior than slit damper in energy dissipation capacity. For this purpose, 9 metallic damper specimens were prepared and shear testing were performed. According to test results, the V shaped metallic damper with strut height of 270mm and strut angle of $60^{\circ}$ shows a better seismic performance than any other specimens. The result of comparison with the yield strength of the dampers using the existing strength formula shows that V type metal dampers were highly evaluated than others within analyzing existing experimental result.