• Journal of Surface Science and Engineering
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• v.51 no.2
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• pp.126-132
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• 2018

SnS thin films with different substrate temperatures ($150 {\sim}300^{\circ}C$) as process parameters were grown on soda-lime glass substrates by RF magnetron sputtering. The effects of substrate temperature on the structural and optical properties of SnS thin films were investigated by X-ray diffraction (XRD), Raman spectroscopy (Raman), field-emission scanning electron microscopy (FESEM), energy dispersive X-ray spectroscopy (EDS), and Ultraviolet-visible-near infrared spectrophotometer (UV-Vis-NIR). All of the SnS thin films prepared at various substrate temperatures were polycrystalline orthorhombic structures with (111) planes preferentially oriented. The diffraction intensity of the (111) plane and the crystallite size were improved with increasing substrate temperature. The three major peaks (189, 222, $289cm^{-1}$) identified in Raman were exactly the same as the Raman spectra of monocrystalline SnS. From the XRD and Raman results, it was confirmed that all of the SnS thin films were formed into a single SnS phase without impurity phases such as $SnS_2$ and $Sn_2S_3$. In the optical transmittance spectrum, the critical wavelength of the absorption edge shifted to the long wavelength region as the substrate temperature increased. The optical bandgap was 1.67 eV at the substrate temperature of $150^{\circ}C$, 1.57 eV at $200^{\circ}C$, 1.50 eV at $250^{\circ}C$, and 1.44 eV at $300^{\circ}C$.

• Korean Journal of Materials Research
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• v.13 no.9
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• pp.567-571
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• 2003

We investigate vanadium (V)-based Ohmic contacts on n-GaN ($N_{d}$=$2.0${\times}$10^{18}$ $cm^{-3}$ ) as a function of annealing temperature. It is shown that the V (60 nm) contacts become Ohmic with specific contact resistances of $10^{-3}$ $- 10^{-4}$ Ω$\textrm{cm}^2$ upon annealing at 650 and $850^{\circ}C$. The V(20 nm)/Ti(60 nm)/Au(20 nm)contacts produce very low specific contact resistances of $2.2 ${\times}$ 10^{-5}$ and$ 4.0${\times}$10^{-6}$ Ω$\textrm{cm}^2$ when annealed at 650 and $850{\circ}C$, respectively. A comparison shows that the use of the overlayers (Ti/Au) is very effective in improving Ohmic property. Based on the current-voltage measurement, Auger electron spectroscopy, glancing angle X-ray diffraction, and X-ray photoemission spectroscopy results, the possible mechanisms for the annealing temperature dependence of the Ohmic behavior of the V-based contacts are described and discussed.d.

• Korean Journal of Materials Research
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• v.23 no.10
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• pp.580-585
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• 2013

To observe the formation of defects at the interface between an oxide semiconductor and $SiO_2$, ZnO was prepared on $SiO_2$ with various oxygen gas flow rates by RF magnetron sputtering deposition. The crystallinity of ZnO depends on the characteristic of the surface of the substrate. The crystallinity of ZnO on a Si wafer increased due to the activation of ionic interactions after an annealing process, whereas that of ZnO on $SiO_2$ changed due to the various types of defects which had formed as a result of the deposition conditions and the annealing process. To observe the chemical shift to understand of defect deformations at the interface between the ZnO and $SiO_2$, the O 1s electron spectra were convoluted into three sub-peaks by a Gaussian fitting. The O 1s electron spectra consisted of three peaks as metal oxygen (at 530.5 eV), $O^{2-}$ ions in an oxygen-deficient region (at 531.66 eV) and OH bonding (at 532.5 eV). In view of the crystallinity from the peak (103) in the XRD pattern, the metal oxygen increased with a decrease in the crystallinity. However, the low FWHM (full width at half maximum) at the (103) plane caused by the high crystallinity depended on the increment of the oxygen vacancies at 531.66 eV due to the generation of $O^{2-}$ ions in the oxygen-deficient region formed by thermal activation energy.

• Analytical Science and Technology
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• v.11 no.1
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• pp.8-12
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• 1998

The 2,2'-Biimidazole was synthesized by the reaction between glycol and ammonium solution. The correct solid structure of 2,2'-biimidazole in this method reported either trans ($C_{2h}$) or cis ($C_{2v}$) form. In this study, the correct structure of 2,2'-biimidazole was analysed by both FTIR and Raman spectroscopy using mutual exclusion properties of them. Also, it was analysed by $^1H$ and $^{13}C$ NMR and computer molecular modeling. The structure of 2,2'-biimidazole found to be trans ($C_{2h}$) than cis ($C_{2v}$) by comparison between FTIR and Raman Spectra. This results agree with computer molecular modeling and x-ray crystallography. This study provide good evidence for identifying structural orientation of the 2,2'-biimidazole containing pyridyl nitrogen.

• Nuclear Engineering and Technology
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• v.12 no.3
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• pp.171-179
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• 1980

This paper presentss flux-to-dose conversion factors for neutrons and gamma-rays based on the concept of the maximum absorbed dose. Neutron flux-to-does-rate conversion factors for energies from 2.5$\times$10$^{-8}$ to 20 MeV are presented while the conversion factors for gamma-rays are given in the energy range of 0.01 to 15MeV. Flux-to-does-rate conversion factors, which were calculated under the assumption that the radiation energy distribution has nonlinearity in phantom, are different from those values obtained by monoenergetic radiation. Especially, these values obtained here were determined for the cross section libray such as DLC-23, DLC-27, and DLC-31. The flux-to-dose-rate conversion factors obtained in this work are in a good agreement with the values presented by American National Standard Institute (ANSI) N666. These results are used to calculate the dose rate distribution of neutron and gamma-ray in any radiation fields, and will be useful for the radiation shielding analysis, radiation protection and radiation dosimetry concerned with problems of continuous energy distribution.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.214.2-214.2
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• 2013

Device performance for the 45 and 32 nm node CMOS technology requires the integration of ultralow-k materials. To lower the dielectric constant for PECVD and spin-on materials, partial replacement of the solid network with air (k=1.01) appears to be more intuitive and direct option. This can be achieved introducting of second "labile" phase during depositoin that is removed during a subsequent UV curing and annealing step. Besides, with shrinking line dimensions the resistivity of barrier films cannot meet the International Technology Roadmap for Semiconductors (ITRS) requirements. To solve this issue self-forming diffusion barriers have drawn attention for great potential technique in meeting all ITRS requirments. In this present work, we report a Cu-V alloy as a materials for the self-forming barrier process. And we investigated diffusion barrier properties of self-formed layer on low-k dielectrics with or without UV curing treatment. Cu alloy films were directly deposited onto low-k dielectrics by co-sputtering, followed by annealing at various temperatures. X-ray diffraction revealed Cu (111), Cu (200) and Cu (220) peaks for both of Cu alloys. The self-formed layers were investigated by transmission electron microscopy. In order to compare barrier properties between V-based interlayer on low-k dielectric with UV curing and interlayer on low-k dielectric without UV curing, thermal stability was measured with various heat treatment temperature. X-ray photoelectron spectroscopy analysis showed that chemical compositions of self-formed layer. The compositions of the V based self-formed barriers after annealing were strongly dominated by the O concentration in the dielectric layers.

• Journal of Surface Science and Engineering
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• v.18 no.3
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• pp.125-133
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• 1985

About 1 mm thick nickel electrodeposits were obtained from nickel sulphamate baths at 40 to 60$^{\circ}C$ over the range of current densities form 5 to 25 A/$dm^2$. Deposits from above about 1.2V of cathode overpotential had randomly distributed fine grains due to a higher nucleation rate and hence had a high hardness. A deposit obtained at 0.63 V had the [110] orientation with a field oriented fine structure which yield a relatively high hardness. Deposite obtained at the intermediate overpotentials showed the [100] orientation with coarse field oriented structure whose column width tended to decrease with increasing cathode overpotential, which, in turn, gave rise to an increase in hardness. Residual stresses of the deposits measured by X-ray technique were mostly tensile but did not exceed 80 MPa, and were occasionally very small compressive. The cathode current efficiency was above 90% in all the electrolysis conditions, whereas the anode current efficiency varied from 50 to 90% with current density, bath temperature and nickel chloride concentration, among which the chloride was the most influential.

• Journal of the Korean Society of Radiology
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• v.16 no.3
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• pp.303-308
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• 2022

Mammography using X-rays is currently the most used for early diagnosis of breast cancer. As the frequency of use of X-ray devices increases, interest in radiation hazards caused by mammography is increasing. Therefore, in this study, in order to measure the exposure dose of the mammary gland in X-ray mammography that requires high contrast and high resolution, the international Atomic Energy Agency (IAEA) stipulates the international standards presented by IEC 62220-1-2: 2015. Based on the beam quality criteria of the recommendation, we tried to present a guideline for evaluating the average mammary gland dose. As a result, the average streamline dose value of the 4.5 cm PMMA phantom was 2.3 mGy at the maximum within the 30 kV range, and was evaluated to be 1.19 mGy based on 28 kV.

• Progress in Medical Physics
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• v.28 no.3
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• pp.83-91
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• 2017

In this work, we investigated the recently proposed phase-contrast x-ray imaging (PCXI) technique, the so-called single grid-based PCXI, which has great simplicity and minimal requirements on the setup alignment. It allows for imaging of smaller features and variations in the examined sample than conventional attenuation-based x-ray imaging with lower x-ray dose. We performed a systematic simulation using a simulation platform developed by us to investigate the image characteristics. We also performed a preliminary PCXI experiment using an established a table-top setup to demonstrate the performance of the simulation platform. The system consists of an x-ray tube ($50kV_p$, 5 mAs), a focused-linear grid (200-lines/inch), and a flat-panel detector ($48-{\mu}m$ pixel size). According to our results, the simulated contrast of phase images was much enhanced, compared to that of the absorption images. The scattering length scale estimated for a given simulation condition was about 117 nm. It was very similar, at least qualitatively, to the experimental contrast, which demonstrates the performance of the simulation platform. We also found that the level of the phase gradient of oriented structures strongly depended on the orientation of the structure relative to that of linear grids.

• Journal of the Institute of Electronics and Information Engineers
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• v.51 no.4
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• pp.193-200
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• 2014

In this paper, the prototype of one-channel gamma-ray spectroscope for automatic radiopharmaceutical systhesis system was designed and characterized. The prototype employed CZT (CdZnTe) spear detector for gamma-ray detection and employed analog-type signal processing method. A radioactive sample Co-60 was used for measuring performance of the gamma-ray spectroscope and energy spectrum is gained with bandwidth of 1173keV. The analog board is made up of SF (shaping filter) and PHA (peak and hold amplifier) for shaping CZT output signal appropriately and ADC (analog to digital converter) and FPGA (field programmable gate array) for drawing gamma-ray spectrum by counting the digitalized gamma-ray signal data.