• The Transactions of The Korean Institute of Electrical Engineers
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• v.59 no.4
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• pp.743-748
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• 2010

Boron nitride (BN) and carbon nitride (CN) films, which have relatively low work functions and commonly exhibit negative electron affinity behaviors, were coated on carbon nanotubes (CNTs) by magnetron sputtering. The CNTs were directly grown on metal-tip (tungsten, approximately 500nm in diameter at the summit part) substrates by inductively coupled plasma-chemical vapor deposition (ICP-CVD). The variations in the morphology and microstructure of CNTs due to coating of the BN and CN films were analyzed by field-emission scanning electron microscopy (FE-SEM). The energy dispersive x-ray (EDX) spectroscopy and Raman spectroscopy were used to identify the existence of the coated layers (CN and BN) on CNTs. The electron-emission properties of the BN-coated and CN-coated CNT-emitters were characterized using a high-vacuum field emission measurement system, in terms of their maximum emission currents ($I_{max}$) at 1kV and turn-on voltage ($V_{on}$) for approaching $1{\mu}A$. The results showed that the $I_{max}$ current was significantly increased and the $V_{on}$ voltage were remarkably reduced by the coating of CN or BN films. The measured values of $I_{max}-V_{on}$ were as follows; $176{\mu}A$-500V for the 5nm CN-coated emitter and $289{\mu}A$-540V for the 2nm BN-coated emitter, respectively, while the $I_{max}-V_{on}$ of the as-grown (i.e., uncoated) emitter was $134{\mu}A$-620V. In addition, the CNT emitters coated with thin CN or BN films also showed much better long-term (up to 25h) stability behaviors in electron emission, as compared with the conventional CNT emitter.

• Journal of Powder Materials
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• v.20 no.5
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• pp.376-381
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• 2013

Spherical Ti-6Al-4V powders in the size range of 250 and 300 ${\mu}m$ were uniformly doped with nano-sized hydroxyapatite (HAp) powders by Spex milling process. A single pulse of 0.75-2.0 kJ/0.7 g of the Ti-6Al-4V powders doped with HAp from 300 mF capacitor was applied to produce fully porous and porous-surfaced Ti-6Al-4V implant compact by electro-discharge-sintering (EDS). The solid core was automatically formed in the center of the compact after discharge and porous layer consisted of particles connected in three dimensions by necks. The solid core increased with an increase in input energy. The compressive yield strength was in a range of 41 to 215 MPa and significantly depended on input energy. X-ray photoelectron spectroscopy and energy dispersive x-ray spectrometer were used to investigate the surface characteristics of the Ti-6Al-4V compact. Ti and O were the main constituents, with smaller amount of Ca and P. It was thus concluded that the porous-surfaced Ti-6Al-4V implant compacts doped with HAp can be efficiently produced by manipulating the milling and electro-discharge-sintering processes.

• Journal of Environmental Science International
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• v.15 no.4
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• pp.333-340
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• 2006

A (5 wt.%)Mn-(1 wt.%)$V_{2}O_{5}/TiO_{2}$ catalyst were prepared by co-precipitation method and used for low-temperature selective catalytic reduction (SCR) of $NO_x$ with ammonia in the presence of oxygen. The properties of the catalysts were studied by X-ray diffraction (XRD), temperature programmed reduction (TPR) and scanning electron microscope-energy dispersive X-ray spectroscopy (SEM-EDS). The experimental results showed that (5 wt.%)Mn-(1 wt.%)$V_{2}O_{5}/TiO_{2}$ catalyst yielded 81% NO conversion at temperature as low as $150^{\circ}C$ and a space velocity of $2,400\;h^{-1}$. Crystalline phase of $Mn_{2}O_3$ was present at ${\ge}\;15%$ Mn on $V_{2}O_{5}/TiO_{2}$. XRD confirmed the presence of manganese oxide ($Mn_{2}O_{3}$) at $2{\theta}=32.978^{\circ}(222)$. The XRD patterns presented of (5 wt.%)Mn-(1 wt.%)$V_{2}O_{5}/TiO_{2}$ did not show intense or sharp peaks for manganese oxides and vanadia oxides. The TPR profiles of (5 wt.%)Mn-(1 wt.%)$V_{2}O_{5}/TiO_{2}$ catalyst showed main reduction peat of a maximum at $595^{\circ}C$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.10
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• pp.859-864
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• 2000

Recently IR detecting devices using MEMS have been actively studied. Microbolometer, one of these devices, detects the change of resistivity as the change of temperature of the device by absorbing IR, IR absorbing materials for microbolometer should have high TCR value and low noise characteristics which depends on resistivity. We fabricated multi-layer VOx thin films to improve the IR detectivity of uncooled IR devices and analyzed IR absorbing characteristics. We fabricated multi-layer VOx thin films by RF reactive sputtering method on SiNx substrate and changed characteristics using the different thickness of V and V$_2$O$\_$5/ thin films. Then we annealed them under 300$\^{C}$. The TCR (Temperature Coefficient of Resistance) measurement was carried out to estimate the IR detectivity of multi-layer VOx thin films. XRD (X-Ray Diffraction) analysis was carried out to estimate the IR detectivity of multi-layer VOx thin films. ZXRD (X-Ray Diffraction) analysis was used to find out phases and structures of V and V$_2$O$\_$5/ thin films. AES (Auger Electron Spectroscopy) analysis was used to find out composition of multi-layer VOx thin films before and after annealing. We obtained the optimum thickness range of V and V$_2$O$\_$5/ thin films from the result of AES analysis. We changed the thickness of V$_2$O$\_$5/ about 20 to 150 $\AA$ and thickness of V about 10 to 20 $\AA$. As the result of this, TCR value of multi-layer VOx thin films was about -2%/k and the resistivity was ∼1Ωcm.

• Journal of the Korean Society of Radiology
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• v.10 no.5
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• pp.313-320
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• 2016

This research has been conducted to investigate the method of reducing patients' radiation exposure during X-ray imaging of Both Hip Ap examination by removing the grid. When using the grid with 60 kV and a non-filter, the Entrance Surface Dose was 4.77 mGy, and the result was highest and 34 times higher than the lowest measurement when removing the grid with 90 kV, and 0.3 mmCu filter. Based on the ICRP Pub. 60 at the level of 70 kV, the Effective Dose of testis and ovary was 0.255 mSv when using the grid, and that result was approximately 5.2 times higher than the 0.049 mSv when removing the grid. Based on the ICRP Pub. 103 at the level of 70 kV, the Effective Dose of testis and ovary was 0.090 mSv when using the grid, and that result was approximately 4.5 times higher than the 0.020 mSv when removing the grid. When using the grid, the range of Exposure Index was 671 to 782, and when removing the grid, the range of Exposure Index was 513 to 606, and both results were at optimal exposure conditions and valid diagnostic imaging after evaluations. Therefore, removing the grid during X-ray imaging of Both Hip Ap will help reduce patients radiation exposure.

• Polymer(Korea)
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• v.31 no.1
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• pp.1-7
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• 2007

In this study, the sulfonated ion exchange fiber was synthesized by $Co^{60}\;{\gamma}-ray$ radiation-induced graft copolymerization. Degree of grafting (DG) increased with increasing the total dose and showed the highest value at 50 v/v% styrene monomer. And also, the degree of sulfonation (DS) increased with increasing the DG and reaction temperature. DS showed the maximum value at 20 min. Ion exchange capacity and swelling ratio of ion exchange fibers increased with increasing the DS and their maximum values were 4.76 meq/g and 23.5%, respectively. Ammonia adsorption increased as increasing the ammonia concentration and ion exchange capacity and remained constant over 10 cycles.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.398-398
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• 2013

The electronic properties and the local structure of tantalum oxide thin film with variation of oxygen flow rate ranging from 9.5 to 16 sccm (standard cubic centimeters per minute) have been investigated by X-ray photoelectron spectroscopy (XPS), Reflection Electron Energy Loss Spectroscopy (REELS), and X-ray absorption spectroscopy (XAS). The XPS results show that the Ta4f spectrum for all films consist of the strong spin-orbit doublet $Ta4f_{7/2}$ and $Ta4f_{5/2}$ with splitting of 1.9 eV. The oxygen flow rate of the film results in the appearance of new features in the Ta4f at binding energies of 23.2 eV, 24.4 eV, 25.8, and 27.3 eV, these peaks attribute to $Ta^{1+}$, $Ta^{2+}$, $Ta^{4+}$/$Ta^{2+}$, and $Ta^{5+}$, respectively. Thus, the presence of non-stoichiometric state from tantalum oxide ($TaO_x$) thin films could be generated by the oxygen vacancies. The REELS spectra suggest the decrease of band gap for tantalum oxide thin films with increasing the oxygen flow rate. The absorption coefficient ${\mu}$ and its fine structure were extracted from the fluorescence mode of extended X-ray absorption fine structure (EXAFS) spectra. In addition, bond distances (r), coordination numbers (N) and Debye-Waller factors (${\sigma}^2$) each film were determined by a detailed of EXAFS data analysis. EXAFS spectrapresent both the increase of coordination number of the first Ta-O shell and a considerable reduction of the Ta-O bond distance with the increase of oxygen flow rate.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.11a
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• pp.123-127
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• 1992

When MOS devices is exposed to radiation, radiation effects of P-type MOS capacitor can cause modulation and/or degradation in devices characteristics and its operating life. The oxide layer is grown in $O_2$+T.C.E. and its thickness ranges from 40 to 80 nm. Irradiations on MOS capacitor were performed by Cobalt-60 gamma ray source and total dose ranges from $10^4$ to $10^8$ rads. The radiation effect on electrical conduction characteristics(I-V) in MOS capacitor was measured as a function of gate oxide thickness and total dose. From the experimental result, I-V characteristics is found to be influenced strongly by total dose in irradiated p-type MOS capacitors. The ohmic current is dependant on of total dose in irradiated P-type MOS capacitors. This results are explained using surface states at interface radiation-induced traps.

• Journal of Biosystems Engineering
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• v.38 no.2
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• pp.87-94
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• 2013

Purpose: Pineapple is now the third most important tropical fruit in world production after banana and citrus. Phytosanitary irradiation is recognized as a promising alternative treatment to chemical fumigation. However, most of the phytosanitary irradiation studies have dealt with physiochemical properties and its efficacy. Accurate dose calculation is crucial for ensuring proper process control in phytosanitary irradiation. The objective of this study was to optimize phytosanitary irradiation treatment of pineapple in various radiation sources using Monte Carlo simulation. Methods: 3-D geometry and component densities of the pineapple, extracted from CT scan data, were entered into a radiation transport Monte Carlo code (MCNP5) to obtain simulated dose distribution. Radiation energy used for simulation were 2 MeV (low-energy) and 10 MeV (high-energy) for electron beams, 1.25 MeV for gamma-rays, and 5 MeV for X-rays. Results: For low-energy electron beam simulation, electrons penetrated up to 0.75 cm from the pineapple skin, which is good for controlling insect eggs laid just below the fruit surface. For high-energy electron beam simulation, electrons penetrated up to 4.5 cm and the irradiation area occupied 60.2% of the whole area at single-side irradiation and 90.6% at double-side irradiation. For a single-side only gamma- and X-ray source simulation, the entire pineapple was irradiated and dose uniformity ratios (Dmax/Dmin) were 2.23 and 2.19, respectively. Even though both sources had all greater penetrating capability, the X-ray treatment is safer and the gamma-ray treatment is more widely used due to their availability. Conclusions: These results are invaluable for optimizing phytosanitary irradiation treatment planning of pineapple.

• Transactions on Electrical and Electronic Materials
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• v.3 no.4
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• pp.16-20
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• 2002

The high bias voltage associated with the thick layer (typically 500-1000 ㎛) of selenium required to have an acceptable x-ray absorption in radiography and fluoroscopy applications may have some practical inconvenience. A hybrid x-ray detector with zinc sulfide-amorphous selenium structure has been developed to improve the x-ray sensitivity of a a-Se based flat-panel digital imaging detector. Photoluminescence(PL) characteristic of a ZnS:Ag phosphor layer showed a light emission peak centered at about 450 nm, which matches the sensitivity spectrum of selenium. The dark current of the hybrid detector showed similar characteristics with that of a a-Se detector. The x-ray sensitivity of hybrid and a-Se x-ray detector was 345 pC/㎠/mR and 295 pC/㎠/mR at an applied voltage of 10 V/㎛, respectively. The purpose of this study was to evaluate the pertinence of a solution using a thin selenium layer, as a photosensitive converter, with a thick coating of silver doped zinc sulfide phosphor.