• Journal of Magnetics
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• v.10 no.4
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• pp.133-136
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• 2005

The NiMn/NiFe bilayer structure which was short time annealed in order to induce unidirectional anisotropy were studied as a function of annealing temperature. The maximum exchange bias field of NiMn/NiFe bilayer was presented at $250^{\circ}C$ after short time annealing process with no external field. The appearance of exchange bias was due to phase transformation of NiMn layer. In plane angular dependence of a resonance field distribution which measured by FMR was analysed as a combined effect of unidirectional anisotropy and uniaxial anisotropy. The resonance field and the line width from FMR measurement were also analysed with annealing temperature.

• Journal of the Korean Magnetics Society
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• v.15 no.5
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• pp.265-269
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• 2005

Exchange bias effect of a various layered thin films were studied by FMR measurment. In plane angular dependence of a resonance field distribution which measured by FMR was analysed as a combined effect of an unidirectional anisotropy and an uniaxial anisotropy. Exchange biased NiFe/IrMn, IrMn/NiFe/IrMn, and NiFe/IrMn/CoFe thin films showed larger unidirectional anisotropy field and uniaxial anisotropy field with compared to that of an unbiased NiFe single thin film. In case of NiFe/Cu/IrMn, the film with thick Cu layer exhibited a similar trend to the unbiased NiFe thin film. NiFe/IrMn/CoFe thin film showed two resonance field distribution due to different ferromagnetic layers. In additon to the resonance field, the line width was also analysed with related to exchange bias effect.

• Journal of Magnetics
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• v.4 no.1
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• pp.33-37
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• 1999

Unidirectional magnetic anisotropy field ($H_an$) was investigated for thin films of $CdCr{2-2x}In_{2X}Se_4 (0$\leq$x$\leq$0.2). This anisotropy originates from the microscopic anisotropic Dzyaloshinskii-Moriya (DM) interaction which arise from the spin-orbit scattering of the conduction electrons by the nonmagnetic impurities. This interaction maintains the remanent magnetization in the direction of the initial applied field. Then the single easy direction of the magnetization is parallel to the direction of the magnetic field. The anisotropy produced by field cooling is unidirectional I.e. the spins system deeps some memory of the cooling field direction. The chalcogenide spinel of$ CdCr_{2-2x}In){2X}Se_4$belongs to the class of the magnetic semiconductors. The magnetic disordered state is obtained when ferromagnetic structure is diluted by In. Then we have the mixed phase characterised by coexistence the magnetic long range ordering (IFN-infinite ferromagnetic network) and the spin glass order (Fc-finite clusters). The total magnetic anisotropy energy depends on the state of magnetic ordering. In our study we concentrated on the magnetic state with reentrant transition and spin glass state. The polycrystalline $ CdCr_{2-2x}In){2X}Se_4$ thin films were obtained by rf sputtering technique. We applied the ferromagnetic resonance (FMR) and M-H loop techniques for determining the temperature composition dependencies of Han. From the experimental data, we have found that Han decreases almost linearly when temperature is increased and in the low temperature is about three times bigger at SG state with comparison to the state with REE.

• Journal of the Korean Magnetics Society
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• v.3 no.4
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• pp.269-276
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• 1993

Co/Pd multilayered thin films with various ratios of Co sublayers to Pd sublayers(nCo/nPd = 1/4, 2/4, 3/4, 5/4) were fabricated at different substrate temperatures($R.\;T.,\;100,\;150,\;200\;^{\circ}C$) with the conventional vacuum evaporation method, and their Hall voltage hysteresis curves were measured. These Hall curves were decomposed on the basis of the superpose of the transverse Hall effect term from the magnetizations of Co and Pd sublayers and the magnetoresistivity term, by the optimal fitting method. In the results, both of the ferromagnetic and anti ferromagnetic states coexisted through whole samples, and the uniaxial or unidirectional easy axis type Hall hysteresis curves occured were dependent upon the effects of the exchange anisotropy between both magnetic states and the domain wall pinning by the antiferromagnet inclusions.

• Journal of the Korean Magnetics Society
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• v.16 no.5
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• pp.234-239
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• 2006

We measured the microwave permeability in the frequency range of 100 MHz$\sim$9 GHz in the exchange biased CoFe/MnIr films. The results were analyzed based on the Landau-Lifshitz-Gilbert theory. The initial permeability and ferromagnetic resonance frequency was tuned by controlling the CoFe thickness and unidirectional anisotropy. The tunable range of ferromagnetic resonance frequency was up to 20 GHz in the thin CoFe layer of 1.5 nm. The CoFe/MnIr films showed the high permeability and low loss properties in the microwave frequency range. Thus, this material could be applied to the microwave devices.

• Journal of Magnetics
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• v.7 no.3
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• pp.80-93
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• 2002

The role of magnetic anisotropy of the antiferromagnetic layer on the magnetization process of exchange coupled polycrystalline ferromagnetidantiferromagnetic bilayers is discussed. In order to elucidate the magnetic torque response of Ni-Fe/Mn-Ir bilayers, the single spin ensemble model is newly introduced, taking into account the two-dimensionally random distribution of the magnetic anisotropy axes of the antiferromagnetic grains. The mechanism of the reversible inducement of the exchange anisotropy along desirable directions by field cooling procedure is successfully explained with the new model. Unidirectional anisotropy constant, J$k$, of polycrystalline Ni-Fe/Mn-Ir and Co-Fe/Mn-Ir bilayers is investigated as functions of the chemical composition of both the ferromagnetic layer and the antiferromagnetic layer. The effects of microstructure and surface modification of the antiferromagnetic layer on JK are also discussed. As a notable result, an extra large value of J$k$, which exceeds 0.5 erg/cm$^2$, is obtained for $Co_{70}Fe_{30}Mn_{75}Ir_{25}$ bilayer with the ultra-thin (50${\AA}$∼100${\AA}$) Mn-Ir layer. The exchange anisotropy of $Co_{70}Fe_{30}$ 40 ${\AA}/Mn_{75}Ir_{25}$ 100 ${\AA}$ bilayer is stable for thermal annealing up to $400{^{\circ}C}$, which is sufficiently high for the application of spin valve magnetoresistive devices.

• Journal of Magnetics
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• v.4 no.3
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• pp.88-91
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• 1999

A series of NiO/NiFe bilayer films are deposited with the variation of Ar sputtering pressure for the NiO layers only. As the pressure for the NiO layers increases, the exchange anisotropy field (HEX) decreases gradually and becomes extinct at 2.5 mTorr, at which the maximum coercive force (HC) in the NiO/NiFe films is obtained. Randomly oriented columnar structures with HEX a few tens of Oe and oriented columnar structures with zero HEX are observed in the NiP layers by highvoltage hihg-resolution transmission electron microscopy. The vanishing of the HEX in the oriented structures is attributed to the lack of exchange anisotropy energy (EEX) between NiO and NiFe layers, which results in little contribution of interfacial unidirectional pinning anisotropy to the interface of NiO/NiFe bilayer.

• Journal of the Korean Magnetics Society
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• v.24 no.5
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• pp.140-145
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• 2014

We analyzed the MnIr thickness dependence of torque signals measured in exchange coupled CoFe/MnIr ($t_{AF}$) bilayers. The measured torque signals were compared with calculated ones by Stoner-Wohlfarth model. The exchange coupling anisotropy $J_c$ was considered for the model calculation between ferromagnetic (F) and antiferromagnetic (AF) layers with uniaxial anisotropy constant of $K_F$ and $K_{AF}$, respectively. The rotational losses were appeared in the range of $0.5t_c$ < $t_{AF}$ < $t_c$ ($=J_c/K_{AF}$) by the unpinned AF layer. While, the unidirectional anisotropy ($J_k$) was caused by the pinned AF layer at $t_{AF}$ > $t_c$. The critical thickness of MnIr layer was $t_c$ = 3.4 nm in CoFe/MnIr bilayers. The rotational losses behavior as shown in $t_{AF}$ = 3 nm sample were explained by the random orientation of the easy axis of AF grains. The unidirectional anisotropy obtained from torque signal of $t_{AF}$ = 10 nm sample was $J_k=0.63J_c$. Thus, the unidirectional anisotropy can be enhanced up to $J_k=J_c$ by aligning the AF easy axis.

• Proceedings of the Korean Magnestics Society Conference
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• 2001.04a
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• pp.28-29
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• 2001

No Abstract, See Full-text

• Proceedings of the Korean Society For Composite Materials Conference
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• 2004.10a
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• pp.272-277
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• 2004

The elastic waves in the plate are dispersive waves with the characteristics of Lamb waves. However, $S_0$ symmetric mode is less dispersive in the frequency region less than first cut-off frequency. And, in anisotropic plates such as CFRP plates, the propagation velocities vary with the direction. So, the wave vector direction to be the phase velocity direction is not accord with the energy flow direction to be the group velocity direction. In this work, the group velocities of the $S_0$ symmetric mode less than the first cut-off frequency was analyzed with the group velocity dispersion curves in unidirectional CFRP plate. And, the group velocity curve obtained by the group velocity dispersion curves are compared with the measured velocities as varied the propagation direction of the Lamb wave. The measured velocities are good agreement with the corrected group velocity curve except near the fiber direction which is called the cusp region. When the propagation direction is not accorded with the principal axis, the direction of the group velocities declines to the fiber direction in the unidirectional CFRP plates. This implies that the energy propagates preferentially toward fiber direction.