• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2014.11a
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• pp.241-241
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• 2014

$SnO_2-core/Zn-shell$ heteronanowires were fabricated by a two-step process: thermal evaporation of Sn powders and employing a sputtering technique with a Zn target. X-ray diffraction, high-resolution transmission electron microscopy, and EDX spectra coincidentally indicated that the shell layer comprised the Zn phase. From Gaussian deconvolution studies, we observed that photoluminescence (PL) spectra consisted of yellow, green, and ultraviolet (UV) emission bands, regardless of shell-coating. We speculated the possible mechanisms of these emission peaks.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.1276-1278
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• 2009

A novel blue emitting $Ca_{1-x}Mg_2Si_3O_9:Eu_x$ phosphor was synthesized by the solid state reaction and its photoluminescence properties were optimized by controlling concentration of the activator contents and substituting concentration of Ca ion by Sr ion. The photoluminescence (PL) showed that this phosphor is efficiently excited by ultraviolet (UV)-visible light in the wavelength range from 200 to 410 nm. Also this phosphor emits intensely blue light with a broad peak at around 450 nm.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.3
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• pp.202-206
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• 2007

ZnO is a promising material to make high efficient ultraviolet(UV) or blue light emitting diodes(LEDs) because of its large binding energy and energy bandgap. In this study, we prepared ZnO thin films with p-type conductivity on silicon(100) substrates by RF magnetron sputtering in the mixture of $N_2$ and $O_2$. The process was accompanied by low pressure in-situ annealing in $O_2$ at $600^{\circ}C$ and $800^{\circ}C$ respectively. Hall effect in Van der Pauw configuration showed that the N-doped ZnO film annealed at $800^{\circ}C$ has p-type conductivity. Photoluminescence(PL) spectrum of the film annealed at $800^{\circ}C$ showed UV emission related to exciton and bound to donor-acceptor pair(DAP) as well as visible emission related to many intrinsic defects.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.1
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• pp.117-123
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• 2014

The fabrication and characterization of a Si/ZnO thin film heterojunction ultraviolet photodiode has been presented in this paper. ZnO thin film of ~100 nm thick was deposited on <100> Silicon (Si) wafer by atomic layer deposition (ALD) technique. The Photoluminescence spectroscopy confirms that as-deposited ZnO thin film has excellent visible-blind UV response with almost no defects in the visible region. The room temperature current-voltage characteristics of the n-ZnO thin film/p-Si photodiodes are measured under an UV illumination of $650{\mu}W$ at 365 nm in the applied voltage range of ${\pm}2V$. The current-voltage characteristics demonstrate an excellent UV photoresponse of the device in its reverse bias operation with a contrast ratio of ~ 1115 and responsivity of ~0.075 A/W at 2 V reverse bias voltage.

• Journal of the Semiconductor & Display Technology
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• v.20 no.4
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• pp.78-82
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• 2021

The Ga₂O₃ single crystal was grown through a floating zone method, and its structural and optical properties were instigated. It has a monoclinic crystal structure with a (100) crystal orientation and an optical band gap energy of 4.6 eV. It showed an average transmittance of 70% in the visible region. At room temperature, its photoluminescent spectrum showed three different peaks: the ultraviolet at 360 nm, the blue-green at 500 nm, and the red peaks at 700 nm. Especially, at liquid nitrogen temperature, the ultraviolet peak was optically active while the others were quenched.

• Korean Journal of Materials Research
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• v.15 no.6
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• pp.408-412
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• 2005

[ $Ba_{1.5}Sr_{0.5}SiO_4:Eu$ ] phosphor particles with high photoluminescence intensity under long wavelength ultraviolet were prepared by spray pyrolysis. We investigated the effect of $NH_4F$ flux added into starting solution on the morphology and photoluminescence intensity of $Ba_{1.5}Sr_{0.5}SiO_4:Eu$ phosphor prepared by spray pyrolysis. $Ba_{1.5}Sr_{0.5}SiO_4:Eu$ phosphor particles prepared from starting solution containing $NH_4F$ flux had the maximum photoluminescence intensity at the post-treatment temperature of $1200^{\circ}C$ and the maximum photoluminescence intensity of $Ba_{1.5}Sr_{0.5}SiO_4:Eu$ phosphor particles prepared from the starting solution containing $NH_4F$ flux was $137\%$ of that of the phosphor particles prepared from the starting solution without flux material. $Ba_{1.5}Sr_{0.5}SiO_4:Eu$ phosphor particles prepared from starting solution containing $NH_4F$ flux had larger size and more aggregated morphology than those prepared from starting solution without flux material. The photoluminescence intensity of $Ba_{1.5}Sr_{0.5}SiO_4:Eu$ phosphor particles prepared from starting solution containing $NH_4F$ flux above $3wt.\%$ had high photoluminescence intensities. The addition amount of $NH_4F$ flux showing the maximum photoluminescence intensity was $12wt.\%$. The optimum amount of $NH_4F$ flux was $5wt.\%$ when we considered the morphological and photoluminescence characteristics of $Ba_{1.5}Sr_{0.5}SiO_4:Eu$ ohosphor particles prepared by spray pyrolysis.

• Korean Journal of Materials Research
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• v.18 no.2
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• pp.92-97
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• 2008

In spray pyrolysis, the effects of the preparation temperature, flow rate of the carrier gas and concentration of the spray solution on characteristics such as the morphology, size, and emission intensity of $Ca_8Mg(SiO_4)_4Cl_2:Eu^{2+}$ phosphor powders under long-wavelength ultraviolet light were investigated. The phosphor powders obtained post-treatment had a range of micron sizes with regular morphologies. However, the composition, crystal structure and photoluminescence intensity of the phosphor powders were affected by the preparation conditions of the precursor powders. The $Ca_8Mg(SiO_4)_4Cl_2:Eu^{2+}$ phosphor powders prepared at temperatures that were lower and higher than $700^{\circ}C$ had low photoluminescence intensities due to deficiencies related to the of Cl component. The phosphor powders with the deficient Cl component had impurity peaks of $Ca_2SiO_4$. The optimum flow rates of the carrier gas in the preparation of the $Ca_8Mg(SiO_4)_4Cl_2:Eu^{2+}$ phosphor powders with high photoluminescence intensities and regular morphologies were between 40 and 60 l/minute. Phosphor powders prepared from a spray solution above 0.5 M had regular morphologies and high photoluminescence intensities.

• Journal of the Korean Ceramic Society
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• v.38 no.9
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• pp.817-821
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• 2001

A new $Mg_{2-x}MN_xSnO_4$ phosphor with an inverse spinel structure was synthesized by the solid-state reaction technique. The photoluminescence properties of the $Mg_2SnO_4$:Mn phosphors were investigated under 147nm -vacuum ultraviolet ray excitation. The Mn-doped $Mg_2SnO_4$ phosphor exhibited high emission intensity with the spectrum centered at 500nm wavelength. It was explained that the green emission in $Mg_2SnO_4$:Mn phosphor has originated from energy transfer from $^4T_1$ to $^6A_1$ of $Mn^{2+}$ ion at tetrahedral site of the spinel structure. The $Mn^{2+}$ ion concentration exhibiting the maximum emission intensity under the excitation of 147nm-vacuum ultraviolet ray was 0.25mol%. And the decay time of the phosphor was shorter than 10ms.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.423-423
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• 2007

In this study, the effects of annealing conditions on the structural and optical properties of ZnO films were investigated. ZnO oxide (ZnO) films were deposited onto $SiO_2$/Si substrates by RF magnetron sputtering from a ZnO target. The substrate was not heated during deposition. ZnO films were annealed in temperature ranges of $500{\sim}650^{\circ}C$ in the $O_2$ flow for 5 ~ 20 min. The film average thicknesses were in the range of 291 nm. The surface morphologies and structures of the samples were characterized by SEM and XRD, respectively. The optical properties were evaluated by PL measurement at room temperature using a He-Cd 325 nm laser. According to the results, the optimal annealing conditions for the best photoluminescence (PL) characteristics were found to be oxygen fraction, ($O_2/O_2+Ar$) of 20%, RF power of 240W, substrate temperature of RT (room temperature), annealing condition of $600^{\circ}C$ for 20 min, and sputtering pressure of 20 mTorr. The obtained wavelength of light emission was found at 379 nm (ultraviolet-UV region). However, the optimal parameters for the best PL characteristics of ZnO thin films were not consistent with those obtained from the (002) intensities of XRD analyses. As a result, XRD pattern was not considered as the key issue concerning the intensity of PL of ZnO thin film. The intensity of the emitted UV light will correspond to the grain size of ZnO film.

• Journal of the Korean Vacuum Society
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• v.12 no.4
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• pp.275-280
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• 2003

Epitaxial Gd$_2O_3:Eu^{3+}$luminescent thin films have been grout on Si(III) substrates using ionized Cluster Beam Deposition (ICBD). After the film growing, they were implanted and post annealed to change the crystal structure. The initial growth stage was monitored by using in-situ Reflection High Energy Electron Diffraction (RHEED). The formed crystal structure was identified with X-ray diffraction (XRD) technique and Fourier transform infrared (FT-R) spectroscopy. The electronic states variations were investigated by Near Edge X-ray Absorption Fine Structure (NEXAFS). Photoluminescence (PL), Cathodoluminescence (CL). and Vacuum ultraviolet (VUV) spectrum were used for examining the optical properties. We report the optical property changes depending on crystal structure and the electronic states.