• 센서학회지
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• 제24권4호
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• pp.224-227
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• 2015

In this study, 2 wt% Cr-doped Ni thin films were deposited using DC sputtering on a bare Si substrate using a 4 inch target at room temperature. In order to obtain ultrathin films from Cr-doped Ni thin films with high electrical properties and uniform surface, the micro-structure and electrical properties were investigated as a function of deposition time. For all deposition times, the Cr-doped Ni thin films had low average resistivity and small surface roughness. However, the resistivity of the Cr-doped Ni thin films at various ranges showed large differences for deposition times below 90 s. From the results, 120 s is considered as the appropriate deposition time for Cr-doped Ni thin films to obtain the lowest resistivity, a low surface roughness, and a small difference of resistivity. The Cr-doped Ni thin films are prospective materials for microdevices as ultrathin film electrodes.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.317-317
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• 2011

Water dissociation on oxide surface has been researched in many fields because of its importance as fundamental phenomenas. MgO(001) is a good model system to understand heterogeneous catalysis, gas sensors, ground-water contaminants, and atmosphere chemistry. Over decades, ultrathin film of MgO on Ag(100) have attracted research activities thanks to its enhanced catalytic property. Correlation of the oxide and the metal, potential screening, charge fluctuation from interface reconstruction makes different energetics of hydroxylation of waters on film. We calculate the water-spliting energetics under the vacuum system.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 추계학술발표대회
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• pp.19.1-19.1
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• 2011

We report on the metal-insulator transition that occurs as a function of film thickness in ultrathin $La_{0.75}Sr_{0.25}VO_3$ films. The metal-insulator transition displays a critical thickness of 5 unit cell. Above the critical thickness, metallic films exhibit a temperature driven metal-insulator transition with weak localization behavior. With decreasing film thickness, oxygen octahedron rotation in the films increases, causing enhanced electron-electron correlation. The electron-electron correlations in ultrathin films induce the transition from metal to insulator in addition to Anderson localization.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2003년도 somma/kms meeting
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• pp.135-135
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• 2003

• Journal of Magnetics
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• 제9권4호
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• pp.97-100
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• 2004

In the present work exchange coupling between ultrathin Fe ($8{\AA}$) and Tb ($12{\AA}$) layers separated by Au spacer of varied thickness ($3-20{\AA}$) was studied. Anomalous Hall effect measurements showed weakly damped oscillating dependence of the Hall conductivity as a function of Au spacer thickness. Disagreement of the observed damping with the RKKY model of interlayer exchange coupling was explained by the influence of external magnetic field on the behaviour of exchange coupling oscillations. It was confirmed by Hall-like effect measurements at zero applied magnetic field and also illustrated by corresponding estimations.

• E2M - 전기 전자와 첨단 소재
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• 제8권6호
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• pp.795-805
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• 1995

A novel thin film processing technique has been developed for the fabrication of ultrathin films of conducting polymers with molecular-level control over thickness and multilayer architecture. This new self-assembly process opens up vast possibilities in applications which require large area, ultrathin films of conducting polymers and more importantly in applications that can take advantage of the unique interactions achievable in the complex, supermolecular architectures of multilayer films.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1997년도 추계학술대회 논문집
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• pp.5-8
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• 1997

A study on the electrical conduction characteristics of the ultrathin organic films is one of the important factors for the development of molecular electronic devices. The Langmuir- Blodgett(LB) technique has recently been attracted interest as a method of the deposition ultrathin films. We hate fabricated N-docosyl N\`-methyl viologen-diTCNQ(DMVT) anion radical LB film and investigated the molecular orientation and electrical conduction characteristics. We have measured infrared transmission-reflection spectra. The alkyl chain is found to he well-ordered with the tilt angle of 13$^{\circ}$ with respect to the substrate surface normal and the TCNQ plane is tilted at 76$^{\circ}$ the surface normal. In ESR spectrum, we confirmed that a half-amplitude linewidth is clearly dependent on the incident angle, which indicates conducting species change. The in-plane conductivity of 31 lagers is approximately 1.33$\times$10$^{-6}$ S/cm. The ohmic behaviour was observed below 0.6 V, when current-voltage(I-V) characteristics was measured verically.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2000년도 제18회 학술발표회 논문개요집
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• pp.141-141
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• 2000

In situ surface magneto-optic Kerr effect(SMOKE), X-ray photoelectron spectroscopy(XPS) and low energy electron diffraction(LEED) were used to study magnetic and structural properties of ultrathin Fe films grown on the Pd(111) surface. The SMOKE measurement showed strong enhancement of ferromagnetism after proper annealing process. Simultaneous changes in morphology was checked by LEED and XPS. After room temperature Fe deposition. longitudinal magnetization appeared above a critical thickness between 2.0 and 2.5 monolayers. When annealed at 450K, 2.0 monolayer Fe film exhibited boty longitudinal and polar magnetizations while 3.0 and 5.5 monolayer films showed little changes. After annealing at 600K, both magnetizations were totally destroyed in 2.0 monolayer film, but longitudinal magnetization was enhanced in 3.0 monolayer film. In the case of 5.5 monolayer film, it was only after 660K annealing that the enhancement of the longitudinal magnetization was observed. It was concluded that the surface flatness and the amount of intermixing were critical in the development of surface magnetism of this system.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.14-15
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• 2010

Recently there has been growing interest in topological insulators or the quantum spin Hall (QSH) phase, which are insulating materials with bulk band gaps but have metallic edge states that are formed topologically and robust against any non-magnetic impurity [1]. In a three-dimensional material, the two-dimensional surface states correspond to the edge states (topological metal) and their intriguing nature in terms of electronic and spin structures have been experimentally observed in bulk Bi1-xSbx single crystals [2,3,4]. However, if we want to know the transport properties of these topological metals, high purity samples as well as very low temperature will be needed because of the contribution from bulk states or impurity effects. In a recent report, it was also shown that an intriguing coupling between the surface and bulk states will occur [5]. A simple solution to this bothersome problem is to prepare a topological metal on an ultrathin film, in which the surface-to-bulk ratio is drastically increased. Therefore in the present study, we have investigated if there is a method to make an ultrathin Bi1-xSbx film on a semiconductor substrate. From reflection high-energy electron diffraction observation, it was found that single crystal Bi1-xSbx films (0${\sim}30\;{\AA}A$ can be prepared on Si(111)-$7{\times}7$. The transport properties of such films were characterized by in situ monolithic micro four-point probes [6]. The temperature dependence of the resistivity for the x=0.1 samples was insulating when the film thickness was $240\;{\AA}A$. However, it became metallic as the thickness was reduced down to $30\;{\AA}A$, indicating surface-state dominant electrical conduction. Figure 1 shows the Fermi surface of $40\;{\AA}A$ thick Bi0.92Sb0.08 (a) and Bi0.84Sb0.16 (b) films mapped by angle-resolved photoemission spectroscopy. The basic features of the electronic structure of these surface states were shown to be the same as those found on bulk surfaces, meaning that topological metals can be prepared at the surface of an ultrathin film. The details will be given in the presentation.

• 한국응용과학기술학회지
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• 제22권3호
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• pp.228-233
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• 2005

Langmuir-Blodgett(LB) technique can speak the best candidate of the future molecular electronic devices. But, precursor as molecular ultrathin film devices require the bulk property that are influenced by the molecular orientation. So, this device is one of current interest in molecular electronic device development of new materials. In this study, quantitative evaluation of molecular orientation in LB films of polyamic acid alkylamine salt was performed analysis experiment comparing the absorption or transmission intensity of the FT-IR spectrometer and reflection or absorption spectra with UV-visible absorption spectra. It could find that the polar angle(${\theta}$) of the dipole moment appears in about $68^{\circ}$ and the tilting angle of the alkyl chain is about $11.5^{\circ}$.