• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.2
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• pp.95-100
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• 2000

For the well-controlled growing in-situ heavily phosphorus doped polycrystalline Si films directly on Si wafer by reduced pressure chemical vapor deposition, a study is made of the two step growth. When in-situ heavily phosphorus doped Si films were deposited directly on Si (100) wafer, crystal structure in the film is not unique, that is, the single crystal to polycrystalline phase transition occurs at a certain thickness. However, the well-controlled polycrtstalline Si films deposited by two step growth grew directly on Si wafers. Moreover, the two step growth, which employs crystallization of grew directly on Si wafers. Moreover, the two step growth which employs crystallization of amorphous silicon layer grown at low temperature, reveals crucial advantages in manipulating polycrystal structures of in-situ phosphorous doped silicon.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.2
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• pp.125-130
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• 2000

Two step growth of reduced pressure chemical vapor eposition has been successfully developed to achieve in-situ phosphorus-doped silicon epilayers, and the characteristic evolution on their microstructures has been investigated using scanning electron microscopy, transmission electron microscopy, and secondary ion mass spectroscopy. The two step growth, which employs heavily in-situ P doped silicon buffer layer grown at low temperature, proposes crucial advantages in manipulating crystal structures of in-situ phosphorus doped silicon. In particular, our experimental results showed that with annealing of the heavily P doped silicon buffer layers, high-quality epitaxial silicon layers grew on it. the heavily doped phosphorus in buffer layers introduces into native oxide and plays an important role in promoting the dispersion of native oxides. Furthermore, the phosphorus doping concentration remains uniform depth distribution in high quality single crystalline Si films obtained by the two step growth.

• Journal of Electrical Engineering and Technology
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• v.6 no.2
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• pp.280-283
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• 2011

In the present work, a new approach is proposed for via interconnects of semiconductor devices, where multi-wall carbon nanotubes (MWCNTs) are used instead of conventional metals. In order to implement a selective growth of carbon nanotubes (CNTs) for via interconnect, the buried catalyst method is selected which is the most compatible with semiconductor processes. The cobalt catalyst for CNT growth is pre-deposited before via hole patterning, and to achieve the via etch stop on the thin catalyst layer (ca. 3nm), a novel 2-step etch scheme is designed; the first step is a conventional oxide etch while the second step chemically etches the silicon nitride layer to lower the damage of the catalyst layer. The results show that the 2-step etch scheme is a feasible candidate for the realization of CNT interconnects in conventional semiconductor devices.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2016.11a
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• pp.173.2-173.2
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• 2016

A two-step oxidation method was applied on Al6061 to debate the growth mechanism of plasma electrolytic oxidation (PEO) coating. The specimens were first oxidized in the primary electrolyte solution {$Na_3PO_4$ (8g/l), NaOH (2g/l), consequently, the specimens were transferred into a different electrolyte {$K_2ZrF_6$ (8g/l), NaOH (2g/l), $Na_2SiF_6$ (0.5g/l)} for further oxidation. The processes was conducted for various processing times. It was found the second step electrolyte component were reached to inner layers, in contrast to the primary step components which were thrustle to the outer layer. The presence of the secondary component in the inner layers were significantly varied with processing time which suggest the change in growth properties with processing time. further more the inside growth of the secondary component confirmed the increasing trend in the downward growth of the coating layer. The corrosion and hardness properties of the coatings were found highly improved with change in growth features with increasing the processing time.

• Korean Journal of Materials Research
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• v.34 no.2
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• pp.116-124
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• 2024

In this study, we investigated the microstructure and piezoelectric properties of 0.96(K_0.456Na_0.536)Nb_0.95Sb_0.05-0.04Bi_0.5(Na_0.82K_0.18)_0.5ZrO₃ (KNNS-BNKZ) ceramics based on one-step and two-step sintering processes. One-step sintering led to significant abnormal grain (AG) growth at temperatures above 1,085 ℃. With increasing sintering temperature, piezoelectric and dielectric properties were enhanced, resulting in a high d₃₃ = 506 pC/N for one-step specimen sintered at 1,100 ℃ (one-step 1,100 ℃ specimen). However, for one-step 1,115 ℃ specimen, a slight decrease in d₃₃ was observed, emphasizing the importance of a high tetragonal (T) phase fraction for superior piezoelectric properties. Achieving a relative density above 84 % for samples sintered by the one-step sintering process was challenging. Conversely, two-step sintering significantly improved the relative density of KNNS-BNKZ ceramics up to 96 %, attributed to the control of AG nucleation in the first step and grain growth rate control in the second step. The quantity of AG nucleation was affected by the duration of the first step, determining the final microstructure. Despite having a lower T phase fraction than that of the one-step 1,100 ℃ specimen, the two-step specimen exhibited higher piezoelectric coefficients (d₃₃ = 574 pC/N and k_p = 0.5) than those of the one-step 1,100 ℃ specimen due to its higher relative density. Performance evaluation of magnetoelectric composite devices composed of one-step and two-step specimens showed that despite having a higher g₃₃, the magnetoelectric composite with the one-step 1,100 ℃ specimen exhibited the lowest magnetoelectric voltage coefficient, due to its lowest k_p. This study highlights the essential role of phase fraction and relative density in enhancing the performance of piezoelectric materials and devices, showcasing the effectiveness of the two-step sintering process for controlling the microstructure of ceramic materials containing volatile elements.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1997.10a
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• pp.1-5
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• 1997

The growth mechanism of AMT(Ammonium Meta-Tungstate) crystal was interpreted as two-step model. The contribution of the diffusion step increased with the increase of temperature, crystal size, and supersaturation. The crystal size distribution from a batch cooling crystallizer was predicted by the numerical solution of a mathematical model which uses the kinetics of nucleation and crystal growth. Temperature control of a batch crystallizer was studied using Learning control algorithm. The purity of AMT crystal producted in this investigation was above 99.99%.

• Journal of Electrical Engineering and Technology
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• v.6 no.2
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• pp.233-238
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• 2011

In the present work, a new approach is proposed for via interconnects of semiconductor devices, where multi-wall carbon nanotubes (MWCNTs) are used instead of conventional metals. In order to implement a selective growth of carbon nanotubes (CNTs) for via interconnect, the buried catalyst method is selected which is the most compatible with semiconductor processes. The cobalt catalyst for CNT growth is pre-deposited before via hole patterning, and to achieve the via etch stop on the thin catalyst layer (ca. 3nm), a novel 2-step etch scheme is designed; the first step is a conventional oxide etch while the second step chemically etches the silicon nitride layer to lower the damage of the catalyst layer. The results show that the 2-step etch scheme is a feasible candidate for the realization of CNT interconnects in conventional semiconductor devices.

• Korean Journal of Materials Research
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• v.9 no.11
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• pp.1049-1054
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• 1999

Two-step growth method is suggested to enhance the alignment of highly oriented diamond films. (100) Si wafers are pretreated with negative biasing of - 200 V at $850^{\circ}C$ for 20 min with 4 % methane in hydrogen plasma. The pretreated wafers are grown under the lst-step growth conditions(2 % CH$_4$ in H$_2$, $810^{\circ}C$) from 2 hr to 35 hr, in order to obtain <100> textured films. The 2nd-step growth(2 % CH$_4$ in H$_2$, $850^{\circ}C$) is carried out to make diamond films having (100) growth planes, which are parallel to the substrate. The alignment of the films after the 1st-step growth, has been analyzed by {111} X-ray pole figure, which is improved abruptly with increasing film thickness. However, the pyramidal surface morphology is inevitable. These morphology is flattened after the 2nd-step growth by developing the (100) facets parallel to the substrate. The alignment of the highly oriented textured films after the two-step growth depends on the thickness of the 1st-step growth film.

• Asian-Australasian Journal of Animal Sciences
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• v.23 no.11
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• pp.1427-1435
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• 2010

The present study was conducted to examine the effect of a stair-stepped feed intake pattern on growth, feed efficiency, and meat quality of Hanwoo steers. Twenty-seven 11-month-old Hanwoo steers were randomly divided into three groups. The control group was fed according to the Korean steer feeding program, and the other two groups were fed according to an alternated feeding schedule of 3-2-4-2 months. During the first three months of the experiment, treatment group 1 (T1) and treatment group 2 (T2) were fed 20% and 30% less than the control group, respectively. For the following two months, the T1 group was fed 20% more than the control group while the T2 group was fed 20% less than the control group. In the third step, T1 and T2 groups were fed 20% and 10% less, respectively, than the control group for four months. In the last two months, T1 and T2 groups were fed 20% more than the control group. After the stair-step feeding trial, steers were fed concentrated feed ad libitum for five months. The altered feed intake pattern did not affect daily body weight gain. However, daily feed intake tended to decrease and growth efficiency tended to increase in the two treatment groups compared to the control group. Altered feed intake also affected blood metabolite levels. The serum glucose and BUN level of the T1 group increased in the first re-fed period compared to the T2 and control groups. The serum cholesterol level of the T2 group decreased in the first restricted-re-fed growth period compared to the T1 and control groups. The serum NEFA levels of the two treatment groups increased from the first restricted period compared to the controls. The serum insulin level of the T2 group increased in the last period compared to the T1 and control groups. Regarding meat yield index, the control group was significantly higher than the T2 group (p<0.05). Regarding meat yield grade, the carcass back fat thickness of the T2 group was significantly higher than the control group (p<0.05). In marbling score, the T1 group was the highest (4.9), followed by the control group (4.1) and the T2 group (4.0). These results indicate that using a stair-stepped growth pattern (T1) can contribute to improvements in growth efficiency and muscle marbling.

• Corrosion Science and Technology
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• v.5 no.4
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• pp.137-140
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• 2006

The effect of pre-existing barrier-type film on porous aluminum oxide film formation during anodization was investigated to control the uniform film growth rate. Initial potential fluctuations during anodization indicated that the breakdown of barrier-film is preceded before the porous formation and the induction time for the porous film growth increases with the increases of pre-existing film thickness. The porous film growth mechanism is lot affected by the presence of barrier film on aluminum surface. In parallel, uniform growth of barrier film underneath the porous structure was attained by two-step anodization processes.