• Transactions of the Korean Society of Mechanical Engineers A
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• v.30 no.10 s.253
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• pp.1320-1327
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• 2006

Parallel procedure and performance of two-step Eulerian code have not been reported sufficiently yet even though it was developed and utilized widely in the impact simulation. In this study, parallel strategy of two-step Eulerian code was proposed and described in detail. The performance was evaluated in the self-made linux cluster computer. Compared with commercial code, a relatively good performance is achieved. Through the performance evaluation of each computation stage, remap is turned out to be the most time consuming part among the other part such as FE processing, communication, time marching etc.

• Korean Journal of Materials Research
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• v.28 no.4
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• pp.235-240
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• 2018

We propose a speedy two-step deposit process to form an Au electrode on hole transport layer(HTL) without any damage using a general thermal evaporator in a perovskite solar cell(PSC). An Au electrode with a thickness of 70 nm was prepared with one-step and two-step processes using a general thermal evaporator with a 30 cm source-substrate distance and $6.0{\times}10^{-6}$ torr vacuum. The one-step process deposits the Au film with the desirable thickness through a source power of 60 and 100 W at a time. The two-step process deposits a 7 nm-thick buffer layer with source power of 60, 70, and 80 W, and then deposits the remaining film thickness at higher source power of 80, 90, and 100 W. The photovoltaic properties and microstructure of these PSC devices with a glass/FTO/$TiO_2$/perovskite/HTL/Au electrode were measured by a solar simulator and field emission scanning electron microscope. The one-step process showed a low depo-temperature of $88.5^{\circ}C$ with a long deposition time of 90 minutes at 60 W. It showed a high depo-temperature of $135.4^{\circ}C$ with a short deposition time of 8 minutes at 100 W. All the samples showed an ECE lower than 2.8 % due to damage on the HTL. The two-step process offered an ECE higher than 6.25 % without HTL damage through a deposition temperature lower than $88^{\circ}C$ and a short deposition time within 20 minutes in general. Therefore, the proposed two-step process is favorable to produce an Au electrode layer for the PSC device with a general thermal evaporator.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.7 no.3
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• pp.384-389
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• 2003

A new two-step soft-output Viterbi algorithm (SOVA) decoder architecture is presented. A significant reduction in the decoding latency can be achieved through the use of the dual-port RAM in the survivor memory structure of the trace-back unit. The system complexity can be lowered due to the determination of the absolute value of the path metric differences inside the add-compare-select (ACS) unit. The proposed SOVA architecture was verified successfully by the functional simulation of Verilog HDL modeling and the FPGA prototyping. The SOVA decoder achieves a data rate very close to that of the conventional Viterbi Algorithm (VA) decoder and the resource consumption of the realized SOVA decoder is only one and a half times larger than that of the conventional VA decoder.

• Journal of Sensor Science and Technology
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• v.28 no.4
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• pp.251-255
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• 2019

We propose a two-step lithography process to minimize edge-bead issues caused by thick photoresist (PR) coating. In the conventional PR process, the edge bead can be efficiently removed by applying an edge-bead removal (EBR) process while rotating the silicon wafer at a high speed. However, applying conventional EBR to the production of desired PR mold with unique negative patterns cannot be used because a lower rpm of spin coating and a lower temperature in the soft bake process are required. To overcome this problem, a two-step lithography process was developed in this study and applied to the fabrication of a polydimethylsiloxane (PDMS) film having super-hydrophobic characteristics. Following UV exposure with a first photomask, the exposed part of the silicon wafer was selectively removed by applying a PR developer while rotating at a low rpm. Then, unique PR mold structures were prepared by employing an additional under-exposure process with a second mask, and the mold patterns were transferred to the PDMS. Results showed that the fabricated PDMS film based on the two-step lithography process reduced the height difference from 23% to 5%. In addition, the water contact angle was greatly improved by spraying of hydrophobic nanosilica on the dual-scaled PDMS surface.

• Proceedings of the Korean Statistical Society Conference
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• 2003.05a
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• pp.269-273
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• 2003

We consider an efficient parametric estimation method of spatial dependence in weak stationary processes. Spatial dependence is modeled through variogram and correlogram. Most of parametric estimation methods of correlogram use two step method; nonparametric estimation and parametric integration. We bind these two steps into one step by using GEE method instead of least squares type optimization. Our one step method is more efficient statistically and gives a clear interpretation of related concepts used in traditional two step methods.

• Korean Journal of Materials Research
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• v.4 no.4
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• pp.459-465
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• 1994

A-axis oriened YBCO thin flims were grown on $LaAIO_{3}$ single crystal substrate by off-axis rf magnetron sputtering method. We used two kinds of process to get a-axis oriented fi1ms;one-step process and two-step process. In one-step process, films are grown in single step in which substrate temperature( $T_s$) is in the range of $590^{\circ}C$ to $680^{\circ}C$. On the other hand, in two step process a-axis oriented thin film templates i f about 30nm thickness is deposited at low temperature first, and subsequently films are grown at elevated temperature to the final thickness of about 100nm. In the case of one step process($T_s$ ~)$600^{\circ}C$), prefered a-axis orientation is dominant and Cu-rich phases segregate at the surface. Segregations decrease and ($00 \ell$) peaks increase upon increasing $T_s$. The films prepared by two step method appeared to have strong(h00) peaks as the deposition rate increased. Microstructure shows pin holes resulted from mixed phases of a-axis and c-axis oriented films. In both cases of one step and two step process, as TS decreases, prepared films show stronger a-axis orientation. However electrical properties of the films are depressed with lower $T_c$ and wider $\Delta T$ as $T_s$ decreases.

• Smart Structures and Systems
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• v.15 no.1
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• pp.57-80
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• 2015

Extended Kalman Filter (EKF) has been widely used for structural identification and damage detection. However, conventional EKF approaches require that external excitations are measured. Also, in the conventional EKF, unknown structural parameters are included as an augmented vector in forming the extended state vector. Hence the sizes of extended state vector and state equation are quite large, which suffers from not only large computational effort but also convergence problem for the identification of a large number of unknown parameters. Moreover, such approaches are not suitable for intelligent structural damage detection due to the limited computational power and storage capacities of smart sensors. In this paper, a two-stage and two-step algorithm is proposed for the identification of structural damage as well as unknown external excitations. In stage-one, structural state vector and unknown structural parameters are recursively estimated in a two-step Kalman estimator approach. Then, the unknown external excitations are estimated sequentially by least-squares estimation in stage-two. Therefore, the number of unknown variables to be estimated in each step is reduced and the identification of structural system and unknown excitation are conducted sequentially, which simplify the identification problem and reduces computational efforts significantly. Both numerical simulation examples and lab experimental tests are used to validate the proposed algorithm for the identification of structural damage as well as unknown excitations for structural health monitoring.

• The Journal of Korean Academy of Prosthodontics
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• v.48 no.4
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• pp.243-250
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• 2010

Purpose: This study evaluated the effect of different screw tightening sequences and methods on detorque values in a well-fitting implant superstructure. Materials and methods: A fully edentulous mandibular master model and a metal framework directly connected to four parallel implants (Astra Tech) with a passive fit to each other were fabricated. Six stone casts were made with a splinted impression technique to represent a 'well-fitting' situation with the metal framework. Detorque values were measured twice after screw tightening using 20 Ncm. Detorque values and minimum detorque values for three screw tightening sequences (1-2-3-4, 2-4-3-1, and 2-3-1-4) and for two tightening methods (two-step and one-step) were analyzed using multi-way analysis of variance and two-way analysis of variance, respectively, at a .05 level of significance. Results: The mean detorque values for screw tightening sequences ranged from 12.8 Ncm (2-4-3-1) to 13.1 Ncm (2-3-1-4), and for screw tightening methods were 13.1 Ncm (two-step) and 11.8 Ncm (one-step). The mean of mimimum detorque values for screw tightening sequences were 11.1 Ncm (1-2-3-4) and 11.2 Ncm (2-4-3-1 and 2-3-1-4), and for screw tightening methods were 11.2 Ncm (two-step) and 9.9 Ncm (one-step). No statistically significant differences among three screw tightening sequences were found for detorque values and for mimimum detorque values. But, statistically significant differences between two screw tightening methods were found for two values. Two-step screw tightening method showed higher detorque value (P = .0003) and higher minimum detorque value (P = .0035) than one-step method. Conclusion: Within the limitations of this study, the screw tightening sequence was not a critical factor for the detorque values in a well-fitting implant superstructure by the splinted impression technique. But, two-step screw tightening method showed greater detorque values than one-step method.

• Journal of the Korean Society for Precision Engineering
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• v.24 no.8 s.197
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• pp.34-40
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• 2007

In this study, focusing on reducing a load in forming helical gears, the extrusion using two-step processes for manufacturing helical gear is proposed. The process is composed of the extrusion step in which spur gear to be used as a preform in next step is formed, and the torsion step in which the preform of spur gear is formed to helical gear. Upper-bound theory for the two-step process is applied and compared with the results of experiment. The result of upper-bound solution has a good agreement with that of the experiment and the FE analysis. The newly proposed method can be used as an advanced forming technique to remarkably reduce a forming load, to prolong a tool life, and to replace the conventional forming process of helical gears. Results obtained from the extrusion using two-step processes enable the designer and manufacturer of helical gear to be more efficient in this field.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.3
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• pp.190-194
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• 2003

Dielectric thin films of (P $b_{0.72}$,L $a_{0.28}$) $Ti_{0.93}$ $O_3$ (PLT(28)) have been deposited on Pt(111)/Ti/ $SiO_2$/Si(100) substrates in-situ by pulsed laser deposition using different annealing and deposition Processes. We have investigated the effect of hydrogen annealing on the ferroelectric properties of PLT thin films and found that the annealing process causes the diffusion of hydrogen into the ferroelectric film resulting in the destruction of polarization. We have tried to form the film by a two-step deposition process In order to improve electrical property. Two-step process to grow PLT films was adopted and verified to be useful to enlarge the grain size of the film and to reduce the leakage current characteristics. Structural properties and electrical properties including dielectric constant, ferroelectric characteristics, and leakage current of PLT thin films were shown to be strongly influenced by grain size. The film deposited by using two-step Process including pre-annealing treatment has a strongly(111) orientation. However, the films deposited by using single -step process with hydrogen annealing process show the smallest grain size. The film deposited by using two-step process including pre-annealing treatment shows the leakage current density of below 10$^{-7}$ A/c $m^2$ for the field of smaller than 100 kV/cm. However, the films deposited by using single-step process with hydrogen annealing process and pre-annealing process show worse leakage current density than the film deposited by using two-step process including pre-annealing treatment.tment.