• 대한기계학회논문집A
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• 제30권10호
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• pp.1320-1327
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• 2006

Parallel procedure and performance of two-step Eulerian code have not been reported sufficiently yet even though it was developed and utilized widely in the impact simulation. In this study, parallel strategy of two-step Eulerian code was proposed and described in detail. The performance was evaluated in the self-made linux cluster computer. Compared with commercial code, a relatively good performance is achieved. Through the performance evaluation of each computation stage, remap is turned out to be the most time consuming part among the other part such as FE processing, communication, time marching etc.

• 한국재료학회지
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• 제28권4호
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• pp.235-240
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• 2018

We propose a speedy two-step deposit process to form an Au electrode on hole transport layer(HTL) without any damage using a general thermal evaporator in a perovskite solar cell(PSC). An Au electrode with a thickness of 70 nm was prepared with one-step and two-step processes using a general thermal evaporator with a 30 cm source-substrate distance and $6.0{\times}10^{-6}$ torr vacuum. The one-step process deposits the Au film with the desirable thickness through a source power of 60 and 100 W at a time. The two-step process deposits a 7 nm-thick buffer layer with source power of 60, 70, and 80 W, and then deposits the remaining film thickness at higher source power of 80, 90, and 100 W. The photovoltaic properties and microstructure of these PSC devices with a glass/FTO/$TiO_2$/perovskite/HTL/Au electrode were measured by a solar simulator and field emission scanning electron microscope. The one-step process showed a low depo-temperature of $88.5^{\circ}C$ with a long deposition time of 90 minutes at 60 W. It showed a high depo-temperature of $135.4^{\circ}C$ with a short deposition time of 8 minutes at 100 W. All the samples showed an ECE lower than 2.8 % due to damage on the HTL. The two-step process offered an ECE higher than 6.25 % without HTL damage through a deposition temperature lower than $88^{\circ}C$ and a short deposition time within 20 minutes in general. Therefore, the proposed two-step process is favorable to produce an Au electrode layer for the PSC device with a general thermal evaporator.

• 한국정보통신학회논문지
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• 제7권3호
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• pp.384-389
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• 2003

새로운 two-step SOVA 복호기 구조가 제안된다. Trace-back단의 survivor memory에 dual-port RAM 개념이 적용되어, 기존 two-step SOVA 방식에 비해서 복호 지연의 현격한 감소가 가능해진다. Path metric 차이의 절대값이 ACS단 내부에서 계산됨으로써, 기존 two-step SOVA 방식에 비해 시스템의 복잡성이 크게 줄어든다. 제안된 SOVA 복호기 구조는 verilog HDL로 기술되어 동작 시뮬레이션을 거쳐 구조의 타당성이 검증되었으며, FPGA로 구현되었다. 구현된 SOVA복호기는 종래의 비터비 복호기에 가까운 데이터 처리율을 보여주었으며, 구현에 사용된 FPGA 소자 자원은 종래의 비터비 복호기의 약 1.5배 정도이다.

• 센서학회지
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• 제28권4호
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• pp.251-255
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• 2019

We propose a two-step lithography process to minimize edge-bead issues caused by thick photoresist (PR) coating. In the conventional PR process, the edge bead can be efficiently removed by applying an edge-bead removal (EBR) process while rotating the silicon wafer at a high speed. However, applying conventional EBR to the production of desired PR mold with unique negative patterns cannot be used because a lower rpm of spin coating and a lower temperature in the soft bake process are required. To overcome this problem, a two-step lithography process was developed in this study and applied to the fabrication of a polydimethylsiloxane (PDMS) film having super-hydrophobic characteristics. Following UV exposure with a first photomask, the exposed part of the silicon wafer was selectively removed by applying a PR developer while rotating at a low rpm. Then, unique PR mold structures were prepared by employing an additional under-exposure process with a second mask, and the mold patterns were transferred to the PDMS. Results showed that the fabricated PDMS film based on the two-step lithography process reduced the height difference from 23% to 5%. In addition, the water contact angle was greatly improved by spraying of hydrophobic nanosilica on the dual-scaled PDMS surface.

• 한국통계학회:학술대회논문집
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• 한국통계학회 2003년도 춘계 학술발표회 논문집
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• pp.269-273
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• 2003

We consider an efficient parametric estimation method of spatial dependence in weak stationary processes. Spatial dependence is modeled through variogram and correlogram. Most of parametric estimation methods of correlogram use two step method; nonparametric estimation and parametric integration. We bind these two steps into one step by using GEE method instead of least squares type optimization. Our one step method is more efficient statistically and gives a clear interpretation of related concepts used in traditional two step methods.

• 한국재료학회지
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• 제4권4호
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• pp.459-465
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• 1994

a-측으로 배향된 $YBa_2Cu_3O_{7-\delta}$ 고온 초전도 박막을 $LaAIO_{3}$(100)단결정 기판에 이중 타게트 off-axis rf마그네트론 스퍼터링법으로 증착하였다. 박막은 기판온도(Ts)$590^{\circ}C$와 $680^{\circ}C$사이에서 단일공정으로 증착하는 one-step방법과, $590^{\circ}C$의 저온에서 a-축으로 배향된 YBCO박막(두께-30nm)을 면저 만들어 틀로 작용시킨 후 그 틀위에 나머지 부분을 기판온도를 승온하면서 증착하는 방법인 two-step방법 등 두 가지 방법을 사용하여 증착시켰다. one-step방법에서는 $T_s$가 증가함에 따라 감소하였으며, ($00 \ell$)피크는 증가하였다. Two-step방법으로 증착한 박막은 증착속도가 감소함에 따라 (h00)피크가 우세하게 나타났다. 박막의 미세구조는 a-축, c- 축 배향성이 혼재하여 핀홀과 같은 결함들이 생성되었다. 모든 경우 $T_s$가 감소함에 따라 a-축 배향성은 우세하였으나 전기적 특성은 저하되었고, 긴 전이온도 폭을 가졌다.

• Smart Structures and Systems
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• 제15권1호
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• pp.57-80
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• 2015

Extended Kalman Filter (EKF) has been widely used for structural identification and damage detection. However, conventional EKF approaches require that external excitations are measured. Also, in the conventional EKF, unknown structural parameters are included as an augmented vector in forming the extended state vector. Hence the sizes of extended state vector and state equation are quite large, which suffers from not only large computational effort but also convergence problem for the identification of a large number of unknown parameters. Moreover, such approaches are not suitable for intelligent structural damage detection due to the limited computational power and storage capacities of smart sensors. In this paper, a two-stage and two-step algorithm is proposed for the identification of structural damage as well as unknown external excitations. In stage-one, structural state vector and unknown structural parameters are recursively estimated in a two-step Kalman estimator approach. Then, the unknown external excitations are estimated sequentially by least-squares estimation in stage-two. Therefore, the number of unknown variables to be estimated in each step is reduced and the identification of structural system and unknown excitation are conducted sequentially, which simplify the identification problem and reduces computational efforts significantly. Both numerical simulation examples and lab experimental tests are used to validate the proposed algorithm for the identification of structural damage as well as unknown excitations for structural health monitoring.

• 대한치과보철학회지
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• 제48권4호
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• pp.243-250
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• 2010

연구 목적: 본 연구는 잘 맞는 임플란트 상부구조물에서 서로 다른 나사조임순서와 조임방법이 나사의 풀림토크값에 미치는 영향을 평가하였다. 연구 재료 및 방법: 서로 수동적 적합 관계를 갖는 완전 무치악 하악 주모형과 네 개의 평행한 임플란트 (Astra Tech)에 직접 연결되는 금속구조물을 제작하였다. 금속구조물과 잘 맞는 실험모형을 위해 주모형에서 연결인상법을 이용하여 여섯 개의 경석고 모형을 얻었다. 20 Ncm로 조인 후 나사의 풀림토크값을 두 번 측정하였다. 세 가지 나사조임순서 (1-2-3-4, 2-4-3-1, 그리고 2-3-1-4)와 두 가지 나사조임방법 (two-step과 one-step)에 대한 나사의 풀림토크값과 최소풀림토크값을 유의수준 .05에서 각각 다원분산분석법 (multi-way ANOVA)과 이원분산분석법 (two-way ANOVA)을 이용하여 통계분석 하였다. 결과: 나사조임순서에 대한 나사의 평균 풀림토크값은 12.8 Ncm (2-4-3-1)에서 13.1 Ncm (2-3-1-4)의 값을 보였고, 나사조임방법에 대한 값은 13.1 Ncm (two-step)와 11.8 Ncm (one-step)였다. 나사조임순서에 대한 나사의 평균 최소풀림토크값은 11.1 Ncm (1-2-3-4)와 11.2 Ncm (2-4-3-1과 2-3-1-4)였고, 나사조임방법에 대한 값은 11.2 Ncm (two-step)와 9.9 Ncm (one-step)였다. 나사의 풀림토크값과 최소풀림토크값은 세 가지 나사조임순서 간에 통계학적으로 유의성 있는 차이가 없었다. 그러나 두 가지 나사조임방법 간에는 두 값 모두 통계학적으로 유의성 있는 차이가 있었다. 나사를 두 단계로 나누어 조이는 방법이 한 번에 조이는 방법보다 더 큰 풀림토크값 (P = .0003)과 더 큰 최소풀림토크 값 (P = .0035)을 보였다. 결론: 본 연구와 같은 조건하에서, 연결인상법으로 얻은 잘 맞는 임플란트 상부구조물에 있어서 나사조임순서는 나사의 풀림토크값에 영향을 미치는 중요한 요소는 아니었다. 그러나 나사를 두 단계로 나누어 조이는 방법은 한 번에 조이는 방법보다 더 큰 풀림토크값을 보였다.

• 한국정밀공학회지
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• 제24권8호통권197호
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• pp.34-40
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• 2007

In this study, focusing on reducing a load in forming helical gears, the extrusion using two-step processes for manufacturing helical gear is proposed. The process is composed of the extrusion step in which spur gear to be used as a preform in next step is formed, and the torsion step in which the preform of spur gear is formed to helical gear. Upper-bound theory for the two-step process is applied and compared with the results of experiment. The result of upper-bound solution has a good agreement with that of the experiment and the FE analysis. The newly proposed method can be used as an advanced forming technique to remarkably reduce a forming load, to prolong a tool life, and to replace the conventional forming process of helical gears. Results obtained from the extrusion using two-step processes enable the designer and manufacturer of helical gear to be more efficient in this field.

• 한국전기전자재료학회논문지
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• 제16권3호
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• pp.190-194
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• 2003

Dielectric thin films of (P $b_{0.72}$,L $a_{0.28}$) $Ti_{0.93}$ $O_3$ (PLT(28)) have been deposited on Pt(111)/Ti/ $SiO_2$/Si(100) substrates in-situ by pulsed laser deposition using different annealing and deposition Processes. We have investigated the effect of hydrogen annealing on the ferroelectric properties of PLT thin films and found that the annealing process causes the diffusion of hydrogen into the ferroelectric film resulting in the destruction of polarization. We have tried to form the film by a two-step deposition process In order to improve electrical property. Two-step process to grow PLT films was adopted and verified to be useful to enlarge the grain size of the film and to reduce the leakage current characteristics. Structural properties and electrical properties including dielectric constant, ferroelectric characteristics, and leakage current of PLT thin films were shown to be strongly influenced by grain size. The film deposited by using two-step Process including pre-annealing treatment has a strongly(111) orientation. However, the films deposited by using single -step process with hydrogen annealing process show the smallest grain size. The film deposited by using two-step process including pre-annealing treatment shows the leakage current density of below 10$^{-7}$ A/c $m^2$ for the field of smaller than 100 kV/cm. However, the films deposited by using single-step process with hydrogen annealing process and pre-annealing process show worse leakage current density than the film deposited by using two-step process including pre-annealing treatment.tment.