• Title/Summary/Keyword: two-band excitation

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Effects of deposition temperature on the properties of SnO2:Eu3+ thin films grown by radio-frequency magnetron sputtering (증착 온도가 라디오파 마그네트론 스퍼터링으로 성장한 SnO2:Eu3+ 박막의 특성에 미치는 영향)

  • Shinho Cho
    • Journal of the Korean institute of surface engineering
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    • v.56 no.3
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    • pp.201-207
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    • 2023
  • Eu3+-doped SnO2 (SnO2:Eu3+) phosphor thin films were grown on quartz substrates by radio-frequency magnetron sputtering. The deposition temperature was varied from 100 to 400 ℃. The X-ray diffraction patterns showed that all the thin films had two mixed phases of SnO2 and Eu2Sn2O7. The 880 nmthick SnO2:Eu3+ thin film grown at 100 ℃ exhibited numerous pebble-shaped particles. The excitation spectra of SnO2:Eu3+ thin films consisted of a strong and broad peak at 312 nm in the vicinity from 250 to 350 nm owing to the O2--Eu3+ charge transfer band, irrespective of deposition temperature. Upon 312 nm excitation, the SnO2:Eu3+ thin films showed a main emission peak at 592 nm arising from the 5D07F1 transition and a weak 615 nm red band originating from the 5D07F2 transition of Eu3+. As the deposition temperature increased, the emission intensities of two bands increased rapidly, approached a maximum at 100 ℃, and then decreased slowly at 400 ℃. The thin film deposited at 200 ℃ exhibited a band gap energy of 3.81 eV and an average transmittance of 73.7% in the wavelength range of 500-1100 nm. These results indicate that the luminescent intensity of SnO2:Eu3+ thin films can be controlled by changing the deposition temperature.

New Red Phosphor with the Improved Color Purity for PDP Applications

  • Mho, Sun-Il
    • 한국정보디스플레이학회:학술대회논문집
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    • 2002.08a
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    • pp.257-259
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    • 2002
  • As a new host material for a red phosphor for PDP applications, has studied (Y,Gd)$Al_3(BO_3)_4$ which gives non-centrosymmetric sites for $Eu^{3+}$ activators. Vacuum ultraviolet (VUV) excitation spectrum of new red phosphor (Y,Gd)$Al_3(BO_3)_4$:$Eu^{3+}$ has two broad bands. One band with the absorption edge at ca. 168 nm is the band-gap absorption of aluminoborate and the other broad band centered 240 nm is the charge transfer transition between $Eu^{3+}$ and the neighboring oxygen anions. The PL spectrum shows the strongest emission at 617 nm due to the electric dipole $^5D_0{\rightarrow}^7F_2$ transition of $Eu^{3+}$, whose luminescent chromaticity is (0.67, 0.33).

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Highly Luminescent (Zn0.6Sr0.3Mg0.1)2Ga2S5:Eu2+ Green Phosphors for a White Light-Emitting Diode

  • Jeong, Yong-Kwang;Cho, Dong-Hee;Kim, Kwang-Bok;Kang, Jun-Gill
    • Bulletin of the Korean Chemical Society
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    • v.33 no.8
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    • pp.2523-2528
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    • 2012
  • Green phosphors $(Zn_{1-a-b}M_aM^{\prime}_b)_xGa_yS_{x+3y/2}:Eu^{2+}$ (M, M' = alkali earth ions) with x = 2 and y = 2-5 were prepared, starting from ZnO, MgO, $SrCO_3$, $Ga_2O_3$, $Eu_2O_3$, and S with a flux $NH_4F$ using a conventional solidstate reaction. A phosphor with the composition of $(Zn_{0.6}Sr_{0.3}Mg_{0.1})_2Ga_2S_5:Eu^{2+}$ produced the strongest luminescence at a 460-nm excitation. The observed XRD patterns indicated that the optimized phosphor consisted of two components: zinc thiogallate and zinc sulfide. The characteristic green luminescence of the $ZnS:Eu^{2+}$ component on excitation at 460 nm was attributed to the donor-acceptor ($D_{ZnGa_2S_4}-A_{ZnS}$) recombination in the hybrid boundary. The optimized green phosphor converted 17.9% of the absorbed blue light into luminescence. For the fabrication of light-emitting diode (LED), the optimized phosphor was coated with MgO using magnesium nitrate to overcome their weakness against moisture. The MgO-coated green phosphor was fabricated with a blue GaN LED, and the chromaticity index of the phosphor-cast LED (pc-LED) was investigated as a function of the wt % of the optimized phosphor. White LEDs were fabricated by pasting the optimized green (G) and the red (R) phosphors, and the commercial yellow (Y) phosphor on the blue chips. The three-band pc-WLED resulted in improved color rendering index (CRI) and corrected color temperature (CCT), compared with those of the two-band pc-WLED.

Active Vibration Control of Multi-Mode Forced Vibration Using PPF Control Technique (PPF 제어기법을 이용한 다중 모드 강제 진동의 능동 진동 제어)

  • 한상보;곽문규;윤신일
    • Journal of KSNVE
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    • v.7 no.6
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    • pp.1007-1013
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    • 1997
  • This paper presents active vibration control scheme of multi-mode forced vibration using piezocetamic sensors and actuators. The control scheme adopted is the Positive Position Feedback (PPF) control. Among various vibration control techniques. PPF control technique makes use of generalized displacement measurements to accomplish the vibration suppression. Two independent controllers are implemented to control the first and the second modes of the beam under external excitation. Experimental results for various damping ratios and feedback gains of the PPF controllers are compared with respect to the contorl efficiency. The results indicate that steady state vibration under wide band excitation can be controlled effectively when multiple sets of PZT sensors and actuators were used with PPF control technique.

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Comparison Between Two Analytical Solutions for Random Vibration Responses of a Spring-Pendulum System with Internal Resonance (내부공진을 가진 탄성진자계의 불규칙 진동응답을 위한 두 해석해의 비교)

  • 조덕상;이원경
    • Journal of KSNVE
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    • v.8 no.4
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    • pp.715-722
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    • 1998
  • An investigation into the stochastic bifurcation and response statistics of an autoparameteric system under broad-band random excitation is made. The specific system examined is a spring-pendulum system with internal resonance, which is known to be a good model for a variety of engineering systems, including ship motions with nonlinear coupling between pitching and rolling motions. The Fokker-Planck equations is used to genrage a general first-order differential equation in the dynamic moment of response coordinates. By means of the Gaussian and non-Gaussian closure methods the dynamic moment equations for the random responses of the system are reduced to a system of autonomous ordinanary differential equations. In view of equilibrium solutions of this system and their stability we examine the stochastic bifurcation and response statistics. The analytical results are compared with results obtained by Monte Carlo simulation.

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Harmonic Peak Picking-based MVF Estimation for Improvement of HMM-based Speech Synthesis System Using TBE Model (TBE 모델을 사용하는 HMM 기반 음성합성기 성능 향상을 위한 하모닉 선택에 기반한 MVF 예측 방법)

  • Park, Jihoon;Hahn, Minsoo
    • Phonetics and Speech Sciences
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    • v.4 no.4
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    • pp.79-86
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    • 2012
  • In the two-band excitation (TBE) model, maximum voiced frequency (MVF) is the most important feature of the excitation parameter because the synthetic speech quality depends on MVF. Thus, this paper proposes an enhanced MVF estimation scheme based on the peak picking method. In the proposed scheme, the local peak and the peak lobe are picked from the spectrum of a linear predictive residual signal. The normalized distance between neighboring peak lobes is calculated and utilized as a feature to estimate MVF. Experimental results of both objective and subjective tests show that the proposed scheme improves synthetic speech quality compared with that of the conventional one.

Synthesis and Photoluminescence Properties of CaWO4:Eu3+ Phosphors (CaWO4:Eu3+ 형광체의 합성과 발광 특성)

  • Cho, Shin-Ho;Cho, Seon-Woog
    • Korean Journal of Materials Research
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    • v.22 no.5
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    • pp.215-219
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    • 2012
  • Red phosphors $Ca_{1-1.5x}WO_4:{Eu_x}^{3+}$ were synthesized with different concentrations of $Eu^{3+}$ ions by using a solid-state reaction method. The crystal structure of the red phosphors was found to be a tetragonal system. X-ray diffraction (XRD) results showed the (112) main diffraction peak centered at $2{\theta}=28.71^{\circ}$, and the size of crystalline particles exhibited an overall decreasing tendency according to the concentration of $Eu^{3+}$ ions. The excitation spectra of all the phosphors were composed of a broad band centered at 275 nm in the range of 230-310 nm due to $O^{2-}{\rightarrow}W^{6+}$ and a narrow band having a peak at 307 nm caused by $O^{2-}{\rightarrow}Eu^{3+}$. Also, the excitation spectrum presents several strong lines in the range of 305-420 nm, which are assigned to the 4f-4f transitions of the $Eu^{3+}$ ion. In the case of the emission spectrum, all the phosphor powders, irrespective of $Eu^{3+}$ ion concentration, indicated an orange emission peak at 594 nm and a strong red emission spectrum centered at 615 nm, with two weak lines at 648 and 700 nm. The highest red emission intensity occurred at x = 0.10 mol of Eu3+ ion concentration with an asymmetry ratio of 12.5. Especially, the presence of $Eu^{3+}$ in the $Ca_{1-1.5x}WO_4:{Eu_x}^{3+}$ shows very effective use of excitation energy in the range of 305-420 nm, and finally yields a strong emission of red light.

Luminescence of $Y_{2-x}Ce_xSiO_5$ Phosphor

  • Han-Soo Kim;Sahn Nahm;Myong-Ho Kim;Kyung-Su Suh;Jae-Dong Byun
    • The Korean Journal of Ceramics
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    • v.3 no.4
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    • pp.245-248
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    • 1997
  • Photoluminescence (PL) and cathodoluminescence (CL) characteristics of Ce-activated $Y_{2-x}Ce_xSiO_5$ have been investigated as functions of Ce concentration and firing condition. According to the X-ray, PL and CL results, $Y_2SiO_5$ is found to have two phases depending on the firing temperature. For the specimen fired above 127$0^{\circ}C$, the emission band peaked at 395nm with a shoulder at 424 nm under ultraviolet (u.v.) and cathode-ray (c.r.) excitation. However, for the specimen fired below 120$0^{\circ}C$ in air the peak was observed at 424 nm and it shifted to longer wavelength with reduction level. The reduced specimen for x=0.02 showed the brightest emission under u.v. excitation whereas under c.r. excitation the brightest emission was observed for the reduced specimen for x=0.06.

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Effect of Deposition Temperature on the Properties of Eu3+-doped MgMoO4 Phosphor Thin Films (증착 온도가 Eu3+ 이온이 도핑된 MgMoO4 형광체 박막의 특성에 미치는 영향)

  • Kang, Dongkyun;Cho, Shinho
    • Journal of the Korean institute of surface engineering
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    • v.49 no.1
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    • pp.81-86
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    • 2016
  • $Eu^{3+}$-doped $MgMoO_4$ phosphor thin films were deposited on quartz substrates by radio frequency magnetron sputtering with changing various growth temperatures. The effects of growth temperature on the structure, transmittance, optical band gap, and luminescence of the phosphor thin films were characterized. All the phosphor thin films, irrespective of growth temperature, showed a monoclinic structure with a main (220) diffraction peak. The thin film deposited at a growth temperature of $400^{\circ}C$ indicated an average transmittance of 90% in the wavelength range of 500 ~ 1100 nm and band gap energy of 4.81 eV. The excitation spectra of the phosphor thin films consisted of a broad charge transfer band peaked at 284 nm in the range of 230 ~ 330 nm and two weak peaks located at 368 and 461 nm, respectively. The emission spectra under ultraviolet excitation at 284 nm exhibited a sharp emission peak at 614 nm and several weak bands. All the phosphor thin films showed high asymmetry ratio values, indicating that $Eu^{3+}$ ions incorporated into the host lattice occupied at the non-inversion symmetry sites. The results suggest that the growth temperature plays an important role in growing high-quality phosphor thin films.

Luminescence properties of Eu- and Mn-activated $BaMgP_2O_7$ as a potential red phosphor for white emission

  • Kim, Yong-Kwang;Choi, Sung-Ho;Jung, Ha-Kyun
    • 한국정보디스플레이학회:학술대회논문집
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    • 2008.10a
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    • pp.581-584
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    • 2008
  • $BaMgP_2O_7$:Eu,Mn phosphors for white emission were synthesized and their luminescent properties were investigated under UV excitation. The phosphor emits two colors: a blue band by $Eu^{2+}$ and a red band by $Mn^{2+}$. Due to the efficient energy transfer from $Eu^{2+}$ to $Mn^{2+}$, the red emission positioned at 615 nm is greatly enhanced with increasing $Mn^{2+}$ content up to 17.5 mol%.

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