• 대한전기학회논문지
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• 제43권2호
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• pp.244-250
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• 1994

This paper presents the design of a new turn-off gate drive circuit for GTO which can accomplish faster turn-off switching. The major disadvantage of the conventional turn-off gate drive technique is that it has a difficulty in realizing high negative diS1GQT/dt because of VS1RGM(maximum reverse gate voltage) and stray inductances of turn-off gate drive circuit[1~2]. The new trun-off gate drive technique can overcome this problem by adding another turn-off gate drive circuit to the conventional turn-off gate drive circuit. Simulation and experimental results of the new turn-off gate drive circuit in conjunction with chopper circuit verify a faster turn-off switching performance.

• 전력전자학회논문지
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• 제22권2호
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• pp.181-184
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• 2017

This study analyzes the turn-on and turn-off transients of a metal-oxide-semiconductor field-effect transistor (MOSFET) with high-switching frequency systems. In these systems, the voltage distortion becomes serious at the output terminal of a Vienna rectifier by the turn-off delay of the MOSFET. The current has low-order harmonics through this voltage distortion. This paper describes the transient of the turn-off that causes the voltage distortion. The algorithm for reducing the sixth harmonic using a proportional-resonance controller is proposed to improve the current distortion without complex calculation for compensation. The reduction of the current distortion by high-switching frequency is verified by experiment with the 2.5-kW prototype Vienna rectifier.

• 대한전기학회논문지
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• 제41권6호
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• pp.600-606
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• 1992

The series connection of power switching semiconductor elements is essential when a high voltage converter is made, so researches are being conducted to further develop this technology. In the series connection of power switching semiconductor elements, the main problem is that simultaneous conduction at turn-on and simultaneous blocking at turn-off together with voltage balancing are unattainable because of the difference of their switching characteristics. In this paper a novel series connection algorithm is proposed, which can implement not only the synchronization of the points of turn-on and turn-off time but the dynamic voltage balancing in spite of the difference of each switching characteristics. The proposed method is that the compensated control signal is attained from the voltage feedback signal and applied to the series-connected power transistors independently. Computer simulation and experimental results verify its validity.

• Nuclear Engineering and Technology
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• 제55권9호
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• pp.3334-3341
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• 2023

We studied the irradiation effects of fast neutron generated by a 30 MeV cyclotron on the electrical and switching characteristics of NPT-IGBT devices. Fast neutron fluence ranges from 2.7 × 10⁹ to 1.82 × 10¹³ n/cm². Electrical characteristics of the IGBT device such as I-V, forward voltage drop and additionally switching characteristics of turn-on and -off were measured. As the neutron fluence increased, the device's threshold voltage decreased, the forward voltage drop increased significantly, and the turn-on and turn-off time became faster. In particular, the delay time of turn-on switching was improved by about 35% to a maximum of about 39.68 ns, and that of turn-off switching was also reduced by about 40%-84.89 ns, showing a faster switching.

• Journal of Power Electronics
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• 제19권2호
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• pp.353-362
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• 2019

To address the problem of circulating current loss in the traditional zero-current switching (ZCS) full-bridge (FB) DC/DC converter, a ZCS FB DC/DC converter topology and modulation strategy is proposed in this paper. The strategy can achieve ZCS turn on and zero-voltage and zero-current switching (ZVZCS) turn off for the primary switches and realize ZVZCS turn on and zero-voltage switching (ZVS) turn off for the auxiliary switches. Moreover, its resonant circuit power is small. Compared with the traditional phase shift full-bridge converter, the new converter decreases circulating current loss and does not increase the current stress of the primary switches and the voltage stress of the rectifier diodes. The diodes turn off naturally when the current decreases to zero. Thus, neither reverse recovery current nor loss on diodes occurs. In this paper, we analyzed the operating principle, steady-state characteristics and soft-switching conditions and range of the converter in detail. A 740 V/1 kW, 100 kHz experimental prototype was established, verifying the effectiveness of the converter through experimental results.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 추계학술대회 논문집 학회본부A
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• pp.153-155
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• 1998

A novel soft-switching pulse-width modulated boost-type DC-DC converter topology is presented in this paper. The conventional boost switch is replaced by a switching cell that is comprised of two switch-diode pairs being linked by an inductor for zero-current switching turn-on. The diodes commutate the current that is flowing through the soft-switching inductor when the two switch turn-off. The capacitor is placed in parallel with the two switches during turn-off, thus providing zero-voltage switching turn-off. Simulation results are presented to support the theoretical considerations.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1990년도 하계학술대회 논문집
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• pp.409-412
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• 1990

Series connection of power switching semiconductor elements is unavoidable when a high voltage convertor is aimed. However, it is important to equalize distribution of turn-off voltage because the switching elements have different characteristics. In this paper optimal switching control algorithm is proposed so that series connected poker switching semiconductor elements can be always switched simultaneous turn-on and turn-off.

• 전력전자학회논문지
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• 제4권1호
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• pp.19-25
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• 1999

본 연구는 새로운 영전압, 영전류 스위칭 Forward 컨버터에 관한 것으로 종래의 하드 스위칭(Hard-Switching) Forward 컨버터에 있어서 Turn-off 및 Turn-off시 발생되는 스위칭 손실 및 출력 다이오드 역회복 특성에 따른 손실증가와 스위칭시 발생되는 기생진동을 Forward 컨버터에 있어서 1차측 주 스위칭소자 및 2차측 출력 정류다이오드와 병렬로 무손실 스너버를 적용함으로써 Forward 컨버터의 1차측 스위칭 소자의 Turn-off 및 Turn-on시 영전압, 영전류 스위칭을 이룰 수 있고, 출력 정류다이오드도 영전압, 영전류 스위칭 됨으로 다이오드의 역회복손실 및 기생 진동에 따른 EMI(Electro-Magnetic Interference)를 줄일 수 있는 무손실 스너버 적용 영전압, 영전류 스위칭 Forward 컨버터에 관한 것이다.

• Journal of Power Electronics
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• 제16권4호
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• pp.1256-1267
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• 2016

Distributed stray inductance exerts a significant influence on the turn-off voltages of power switching devices. Therefore, the design of low stray inductance bus bars has become an important part of the design of high-power converters. In this study, we first analyze the operational principle and switching transient of a T-type converter. Then, we obtain the commutation circuit, categorize the stray inductance of the circuit, and study the influence of the different types of stray inductance on the turn-off voltages of switching devices. According to the current distribution of the commutation circuit, as well as the conditions for realizing laminated bus bars, we laminate the bus bar of the converter by integrating the practical structure of a capacitor bank and a power module. As a result, the stray inductance of the bus bar is reduced, and the stray inductance in the commutation circuit of the converter is reduced to more than half. Finally, a 10 kVA experimental prototype of a T-type converter is built to verify the effectiveness of the designed laminated bus bar in restraining the turn-off voltage spike of the switching devices in the converter.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 하계학술대회 논문집 D
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• pp.1947-1949
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• 1999

Carrier lifetime in silicon power devices caused switching delay and excessive power loss at high frequency switching. We studied transient turn-on/turn-off transient characteristics of electron irradiated and proton irradiated silicon pn junction diodes. Both the electron and proton irradiation of power devices have already become a widely used practice to reduce minority carrier lifetime locally[1]. The sample is n+p junction diode, made by ion implantation on a $20\Omega.cm$ p-type wafer. We investigated turn-on/turn-off transient & breakdown voltage characteristics by digital oscilloscope. Our data show that proton irradiated samples show better performance than electron irradiated samples.