• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.55-55
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• 2009

Silicon Carbide (SiC) is a material with a wide bandgap (3.26eV), a high critical electric field (~2.3MV/cm), a and a high bulk electron mobility (${\sim}900cm^2/Vs$). These electronic properties allow high breakdown voltage, high frequency, and high temperature operation compared to Silicon devices. Although various SiC DMOSFET structures have been reported so far for optimizing performances. the effect of channel dimension on the switching performance of SiC DMOSFETs has not been extensively examined. In this paper, we report the effect of the interface states ($Q_s$) on the transient characteristics of SiC DMOSFETs. The key design parameters for SiC DMOSFETs have been optimized and a physics-based two-dimensional (2-D) mixed device and circuit simulator by Silvaco Inc. has been used to understand the relationship with the switching characteristics. To investigate transient characteristic of the device, mixed-mode simulation has been performed, where the solution of the basic transport equations for the 2-D device structures is directly embedded into the solution procedure for the circuit equations. The result is a low-loss transient characteristic at low $Q_s$. Based on the simulation results, the DMOSFETs exhibit the turn-on time of 10ns at short channel and 9ns at without the interface charges. By reducing $SiO_2/SiC$ interface charge, power losses and switching time also decreases, primarily due to the lowered channel mobilities. As high density interface states can result in increased carrier trapping, or recombination centers or scattering sites. Therefore, the quality of $SiO_2/SiC$ interfaces is important for both static and transient properties of SiC MOSFET devices.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.5-5
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• 2009

Thin-film-transistors (TFTs) that can be prepared at low temperatures have attracted much attention because of the great potential for transparent and flexible electronics. One of the mainstreams in this field is the use of organic semiconductors such as pentacene. But device performance of the organic TFTs is still limited due to low field-effect mobility and rapid degradation after exposing to air. Alternative approach is the use of amorphous oxide semiconductors as a channel. Amorphous oxide semiconductors (AOSs) based TFTs showed the fast technological development, because AOS films can be fabricated at room temperature and exhibit the possibility in application like flexible display, electronic paper, and larges solar cells. Among the various AOSs, a-IGZO has lots of advantages because it has high channel mobility, uniform surface roughness and good transparency. [1] The high mobility is attributed to the overlap of spherical s-orbital of the heavy post-transition metal cations. This study demonstrated the effect of the variation in channel thickness from 30nm to 200nm on the TFT device performance. When the thickness was increased, turn-on voltage and subthreshold swing was decreased. The a-IGZO channels and source/drain metals were deposited with shadow mask. The a-IGZO channel layer was deposited on $SiO_2$/p-Si substrates by RF magnetron sputtering, where RF power is 150W. And working pressure is 3m Torr, at $O_2/Ar$ (2/28 sccm) atmosphere. The electrodes were formed with electron-beam evaporated Ti (30 nm) and Au (70 nm) bilayer. Finally, Al (150nm) as a gate metal was thermal-evaporated. TFT devices were heat-treated in a furnace at 250 $^{\circ}C$ and nitrogen atmosphere for 1hour. The electrical properties of the TFTs were measured using a probe-station. The TFT with channel thickness of 150nm exhibits a good subthreshold swing (SS) of 0.72 V/decade and on-off ratio of $1{\times}10^8$. The field effect mobility and threshold voltage were evaluated as 7.2 and 8 V, respectively.

• 전자공학회논문지
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• 제53권7호
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• pp.110-120
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• 2016

인체 삽입형 뇌 신경자극기는 소비전력에 있어서 효율적인 구조로 설계되어야 한다. 이들 자극신호는 파형이 단순하고, MCU(micro controller unit)의 대기시간은 실행시간보다 훨씬 긴 특성을 가짐에도 불구하고, 이러한 특성을 고려한 저전력 설계가 되어 있지 않다. 본 논문에서는 자극신호 특성에 기반하는 저전력 알고리즘을 제안한다. 또한 뇌 신경자극기 S/W, NMS(neuro modulation simulation)의 설계 및 구현 결과도 제시한다. 저전력 알고리즘 구현을 위해, 기존 뇌 신경자극기 프로그램의 함수별 수행(running) 시간을 분석하여, 실행(execution) 시간과 대기(waiting) 시간을 도출하였다. 그리고 AM-LPM(active mode-low power mode) 전환시간을 추정하여 저전력 알고리즘 구현에 반영하였다. 본 논문에서 제안하는 저전력 알고리즘은 자극신호의 특성을 이용하여 출력을 다수의 구간으로 분할하고, MCU를 구간별 AM 또는 LPM으로 운용한다. 제안하는 알고리즘의 검증을 위해, 외부 제어프로그램을 개발하여 알고리즘의 동작상태를 확인하였고, 오실로스코프를 이용하여 출력신호의 정확성을 확인하였다. 검증 결과, 제안하는 저전력 알고리즘을 적용할 경우, 기존 뇌 신경자극기 대비 소모전류를 76.31% 감소시킴을 확인 할 수 있었다.

• 천문학회지
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• 제50권3호
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• pp.79-92
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• 2017

We present a BV I optical photometric study of the old open cluster Ruprecht 6 using the data obtained with the SMARTS 1.0 m telescope at the CTIO, Chile. Its color-magnitude diagrams show the clear existence of the main-sequence stars, whose turn-off point is located around $V{\approx}18.45mag$ and $B-V{\approx}0.85mag$. Three red clump (RC) stars are identified at V = 16.00 mag, I = 14.41 mag and B - V = 1.35 mag. From the mean $K_s-band$ magnitude of RC stars ($K_s=12.39{\pm}0.21mag$) in Ruprecht 6 from 2MASS photometry and the known absolute magnitudes of the RC stars ($M_{K_S}=-1.595{\pm}0.025mag$), we obtain the distance modulus to Ruprecht 6 of $(m-M)_0=13.84{\pm}0.21mag$ ($d=5.86{\pm}0.60kpc$). From the ($J-K_s$) and (B - V ) colors of the RC stars, comparison of the (B - V ) and (V - I) colors of the bright stars in Ruprecht 6 with those of the intrinsic colors of dwarf and giant stars, and the PARSEC isochrone fittings, we derive the reddening values of E(B - V ) = 0.42 mag and E(V - I) = 0.60 mag. Using the PARSEC isochrone fittings onto the color-magnitude diagrams, we estimate the age and metallicity to be: $log(t)=9.50{\pm}0.10(t=3.16{\pm}0.82Gyr)$ and $[Fe/H]=-0.42{\pm}0.04dex$. We present the Galactocentric radial metallicity gradient analysis for old (age > 1 Gyr) open clusters of the Dias et al. catalog, which likely follow a single relation of $[Fe/H]=(-0.034{\pm}0.007)R_{GC}+(0.190{\pm}0.080)$ (rms = 0.201) for the whole radial range or a dual relation of $[Fe/H]=(-0.077{\pm}0.017)R_{GC}+(0.609{\pm}0.161)$ (rms = 0.152) and constant ([Fe/H] ~ -0.3 dex) value, inside and outside of RGC ~ 12 kpc, respectively. The metallicity and Galactocentric radius ($13.28{\pm}0.54kpc$) of Ruprecht 6 obtained in this study seem to be consistent with both of the relations.

• JSTS:Journal of Semiconductor Technology and Science
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• 제14권5호
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• pp.601-608
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• 2014

In this paper, we have characterized the electrical properties related to gate leakage current in AlGaN/GaN MISHFETs with varying the thickness (0 to 10 nm) of $Al_2O_3$ gate insulator which also serves as a surface protection layer during high-temperature RTP. The sheet resistance of the unprotected TLM pattern after RTP was rapidly increased to $1323{\Omega}/{\square}$ from the value of $400{\Omega}/{\square}$ of the as-grown sample due to thermal damage during high temperature RTP. On the other hand, the sheet resistances of the TLM pattern protected with thin $Al_2O_3$ layer (when its thickness is larger than 5 nm) were slightly decreased after high-temperature RTP since the deposited $Al_2O_3$ layer effectively neutralizes the acceptor-like states on the surface of AlGaN layer which in turn increases the 2DEG density. AlGaN/GaN MISHFET with 8 nm-thick $Al_2O_3$ gate insulator exhibited extremely low gate leakage current of $10^{-9}A/mm$, which led to superior device performances such as a very low subthreshold swing (SS) of 80 mV/dec and high $I_{on}/I_{off}$ ratio of ${\sim}10^{10}$. The PF emission and FN tunneling models were used to characterize the gate leakage currents of the devices. The device with 5 nm-thick $Al_2O_3$ layer exhibited both PF emission and FN tunneling at relatively lower gate voltages compared to that with 8 nm-thick $Al_2O_3$ layer due to thinner $Al_2O_3$ layer, as expected. The device with 10 nm-thick $Al_2O_3$ layer, however, showed very high gate leakage current of $5.5{\times}10^{-4}A/mm$ due to poly-crystallization of the $Al_2O_3$ layer during the high-temperature RTP, which led to very poor performances.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.137-137
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• 2009

Thin-film transistors (TFTs) that can be prepared at low temperatures have attracted much attention due to the great potential for flexible electronics. One of the mainstreams in this field is the use of organic semiconductors such as pentacene. But device performance of the organic TFTs is still limited by low field effect mobility or rapidly degraded after exposing to air in many cases. Another approach is amorphous oxide semiconductors. Amorphous oxide semiconductors (AOSs) have exactly attracted considerable attention because AOSs were fabricated at room temperature and used lots of application such as flexible display, electronic paper, large solar cells. Among the various AOSs, a-IGZO was considerable material because it has high mobility and uniform surface and good transparent. The high mobility is attributed to the result of the overlap of spherical s-orbital of the heavy pest-transition metal cations. This study is demonstrated the effect of thickness channel layer from 30nm to 200nm. when the thickness was increased, turn on voltage and subthreshold swing were decreased. a-IGZO TFTs have used a shadow mask to deposit channel and source/drain(S/D). a-IGZO were deposited on SiO2 wafer by rf magnetron sputtering. using power is 150W, working pressure is 3m Torr, and an O2/Ar(2/28 SCCM) atmosphere at room temperature. The electrodes were formed with Electron-beam evaporated Ti(30nm) and Au(70nm) structure. Finally, Al(150nm) as a gate metal was evaporated. TFT devices were heat treated in a furnace at $250^{\circ}C$ in nitrogen atmosphere for an hour. The electrical properties of the TFTs were measured using a probe-station to measure I-V characteristic. TFT whose thickness was 150nm exhibits a good subthreshold swing(S) of 0.72 V/decade and high on-off ratio of 1E+08. Field effect mobility, saturation effect mobility, and threshold voltage were evaluated 7.2, 5.8, 8V respectively.

• 한국경제지리학회지
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• 제17권2호
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• pp.335-348
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• 2014

본 연구는 충남가젤산업의 기술수준분석과 산업구조분석을 통해 정책적 시사점을 도출해 보고자 하였다. 분석결과, 충남가젤산업은 규모와 성장성 측면에서 경쟁우위가 있고, 산업효율성이 높아 소득증대 효과가 있었다. 또한 충남가젤산업 중 저기술산업은 첨단기술산업을 제외한, 고기술산업, 중기술수준의 산업보다 산업집적과 산업성장을 거듭하며 빠른 산업구조변화속도로 변모해왔다는 사실을 밝혀냈다. 이러한 분석결과를 바탕으로 다음의 시사점을 도출하였다. 낮은 연구개발 투자에도 빠른 성장과 고용창출을 달성하는 충남가젤산업에 대한 집중한 추가적인 연구개발투자가 필요하며, 산업규모(BQ)와 산업성장율(IG)을 이용한 산업발전단계별 육성전략 추진이 필요하다. 또한 충남가젤산업 중 저기술산업이 고기술산업, 중기술수준의 산업보다 빠른 산업구조적 변화를 보이는 것에 대해 지역의 입장에서 유불리를 심도있게 검토해야 한다. 본 연구에서 분석한 가젤산업을 지역산업정책에 활용한다면 높은 소득증대와 고용창출 등으로 지역산업과 지역발전에 이바지 할 것으로 기대한다.

• 한국동물번식학회:학술대회논문집
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• 한국동물번식학회 2003년도 학술발표대회 발표논문초록집
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• pp.27-27
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• 2003

A diversified and concentrative approach of methylation player can be one of the most powerful studies in the understanding of global epigenetic modifications. Previous studies have suggested that DNA methylation contributes to transcriptional silencing through the several DNA methylation-mediated repression systems by hypermethylation, including methyltransferases (DNMTs), DNA methyltransferase association protein 1 (DMAPl), methyl-CpG binding domain (MBD), and histone deacetylases (HDACs). Assembly of these regulatory protein complexes act sequentially, reciprocally, and interdependently on the newly composed DNA strand through S phase. Therefore, these protein complexes have a role in coupling DNA replication to the designed turn-off system in genome. In this study, we attempted to address the role of DNA methylation by the functional analysis of the methyltransferase molecule, we described the involvement of DMAP1 and DNMTs in cell divistion and the effect of their loss. We also described distinct patterns that DMAP1 and DNMTs are spatially reorganized and displaced from condensing chromosomes as cells progress through mitosis in HeLa cell, COS7, and HIH3T3 cell cycle progressions. DNMT1, DNMT3b, and DMAP1 do not stably contact the genetic material during chromosome compaction and repressive expression. These finding show that the loss of activities of DNMTs and DMAP1 occure stage specifically during the cell cycle, may contribute to the integral balance of global DNA methylation. This is consistent with previous studies resulted in decreased histone acetyltransferases and HDACs, and differs from studies resulted in increased histone methyltransferases. Our results suggest that DNA methylation by DNMTs and DMAP1 during mitosis acts to antagonize hypermethylation by which this mark is epigenetical mitotic-specific methylation.

• 만화애니메이션 연구
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• 통권6호
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• pp.7-22
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• 2002

Animation constitutes the core of the media industry, which in turn lies at the center of the cultural industry. It is considered one of the industries where South Korea has the competitive edge over other countries. With the pool of customers getting wider, the genre of animation has become more and more diverse, forming a great market for it. Aware of this trend, this study focused on animation as a part of the pop culture, and on providing corresponding various viewpoints for future cultural studies. This researcher measured the practicality and persuasiveness of this study through Shreck, a three-dimensional C.G. animation which is acclaimed for its success in dismantling the old grammar of animation movies that represent the anti-Disney ideas. This researcher felt it imperative to heed the unique language of Shreck, which contains discourses on various cultural ideologies such as paradoxical structure that pits entertainment that is shown through dismantling of the canon, feminism and antifeminism against each other. This study analyzed the entertaining element of the animation genre by means of the Semiotics of Keith Moxey, thereby attempting to establish a legitimate social status of the genre, whose artfulness has been depreciated in the art society. In chapter II, this researcher examines the chronological development of three-dimensional C.G. animation that has shown a rapid advancement. Chapter III defines the cultural ideology of Shreck by exploring basic theories and texts employed in analysis of art works. This study started with the assumption that defines, from the viewpoint of symbology, the animation text as an aggregate of discourses on entertainment, and competitive and paradoxical ideologies. Then, this researcher analyzed the text and the generation process of meanings in Shreck. Consequently, this study has come to the following conclusions: First, Shreck induces changes of concepts about the canon by means of distorting and reversing the existing animation movies, which seems to reflect in the contemporary tendency of seeking new interpretations of entertainment. Second, Shreck shows up the cognitive changes of our age as to feminism by competing feminism against antifeminism. Although Shreck serves as a venue of competition between the two opposing ideas, it stops short of brushing off women as outsiders in society. Rather, it represents the resistance to the male chauvinism existing in the structures of animation and culture. As shown in the text analysis, Shreck presents an advent of a new ideology critical of the previous animation films. In addition, it reflects in the struggle between the pro-feminism on the part of the viewers and the anti-feminism that lies in the social and culture structure. This study, however, is limited in its scope and selection of subject. First, although this researcher has stressed the importance of understanding the animation as part of the pop culture and conducting researches within the historic paradigm, this study fails to provide an in-depth insight in the impacts that the changes in the C.G. industry and the systematic conditions may have on the three-dimensional C.G. animation genre. Furthermore, this study runs the risk of being understood as pro-American due to its selection of Shreck as its research subject.

• 한국진공학회지
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• 제9권2호
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• pp.155-161
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• 2000

이온빔보조증착법을 이용하여 c-BN(70%)/h-BN(30%) 혼합막을 합성하였으며, 이를 후속 열처리로 안정화 시켰다. 보론은 e-beam evaporator로, 질소는 end-hall type 이온 건으로 공급하였으며, 기판에는 -400과 -500V의 DC 바이어스를 각각 인가하였고, $700^{\circ}C$로 가열하였다. 보론의 기화속도는 1.2 $\AA$/sec였고, 질소이온의 에너지는 약 100 eV였다. 막 합성 후같은 진공에서 후속열처리를 $700^{\circ}C$ 및 $800^{\circ}C$에서 1시간동안 각각 행하였다. 후속열처리를 하지 않은 경우에는 공기 중에 노출된 직후에 막이 기판에서 박리된 반면, $800^{\circ}C$에서 후속 열처리를 한 경우에는 안정하였다. 후속 열처리에 의하여 막 전체의 응력은 4.9 GPa에서 3.4 GPa로 감소하였으나, c-BN상의 응력은 변화하지 않았다. 이러한 결과는 c-BN상의 응력 해소를 주요 안정화 기구로 보고한 기존의 결과와 다른 것으로, 후속 열처리 동안에, 비정질이나 결함이 많은 h-BN상의 구조적, 화학적 relaxation에 의하여 막의 안정화가 진행될 수 있음을 의미한다. c-BN상의 분율이 작은 혼합막의 경우 비 c-BN상의 안정화가 막 전체의 안정화에 매우 중요할 것으로 판단된다.