• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.5
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• pp.69-76
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• 2016

Current driving capability of MCT (MOS Controlled Thyristor) is determined by turn-off capability of conducting current, that is off-FET performance of MCT. On the other hand, having a good turn-on characteristics, including high peak anode current ($I_{peak}$) and rate of change of current (di/dt), is essential for pulsed power system which is one of major application field of MCTs. To satisfy above two requirements, careful control of on/off-FET performance is required. However, triple diffusion and several oxidation processes change surface doping profile and make it hard to control threshold voltage ($V_{th}$) of on/off-FET. In this paper, we have demonstrated the effect of $V_{th}$ adjustment ion implantation on the performance of MCT. The fabricated MCTs (active area = $0.465mm^2$) show forward voltage drop ($V_F$) of 1.25 V at $100A/cm^2$ and Ipeak of 290 A and di/dt of $5.8kA/{\mu}s$ at $V_A=800V$. While these characteristics are unaltered by $V_{th}$ adjustment ion implantation, the turn-off gate voltage is reduced from -3.5 V to -1.6 V for conducting current of $100A/cm^2$ when the $V_{th}$ adjustment ion implantation is carried out. This demonstrates that the current driving capability is enhanced without degradation of forward conduction and turn-on switching characteristics.

• Proceedings of the KIEE Conference
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• 1996.11a
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• pp.346-349
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• 1996

In application of high power IGBT PWM inverters, the treatable power range is considerably limited due to the overvoltage caused by the stray inductance components within the power circuit. This paper proposes a new gate drive circuit for IGBTs which can actively suppress the overvoltage across the driven IGBT at turn-off and the overvoltage across the opposite IGBT at turn-on while preserving the most simple and reliable power circuit. The turn-off driving scheme has adaptive feature to the amplitude of collector current, so that the overvoltage is limited much effectively at the larger collector current. The turn-on scheme is to decrease the rising rate of the collector current by increasing input capacitance during turn-on transient when the gate-emitter voltage is greater than threshold voltage. The experimental results under various normal and fault conditions prove the effectiveness of the proposed circuit.

• Tribology and Lubricants
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• v.31 no.3
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• pp.125-140
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• 2015

In this paper, we present the results of the wear analysis of journal bearings on a stripped-down single-cylinder engine during start-up and coast-down by motoring. We calculate journal bearing wear by using a modified specific wear rate considering the fractional film defect coefficient and load-sharing ratio for the asperity portion of a mixed elastohydrodynamic lubrication (EHL) regime coupled with previously presented graphical data of experimental lifetime linear wear in radial journal bearings. Based on the calculated wear depth, we obtain a new oil film thickness for every crank angle. By examination of the oil film thickness, we determine whether the oil film thickness at the wear scar region is in a mixed lubrication regime by comparing dimensionless oil film thickness, h/σ, to 3.0 at every crank angle. We present the lift-off speed and the crank angles involved with the wear calculation for bearings #1 and #2. The dimensionless oil film thickness, h/σ, illustrates whether the lubrication region between the two surfaces is still within the bounds of the mixed lubrication regime after scarring of the surface by wear. In addition, we present in tables the asperity contact pressure, the real minimum film thickness at the wear scar region, the modified specific wear rate, and the wear angle, α, for bearings #1 & #2. To show the real shape of the oil film at wear scar region, we depict the actual oil film thickness in graphs. We also tabulated the ranges of bearing angles related with wear scar. We present the wear volume for bearings #1 and #2 after one turn-on and turn-off of the engine ignition switch for five kinds of equivalent surface roughness. We show that the accumulated wear volume after a single turn-on and turn-off of an ignition switch normally increases with increasing surface roughness, with a few exceptions.

• Proceedings of the KIEE Conference
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• 2006.10d
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• pp.139-142
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• 2006

This paper describes a new method using random modulated strategies for switched reluctance machines. The proposed method is combined random turn-on, turn-off angle technique and random pulse width modulation technique. The purpose of this proposed method is to decrease harmonic spectrum, and thus reduce the emitted acoustical noise. A random generator is generated by linear congruential generator (LCG) using random pulse position (RPP) scheme. Simulation results show that the harmonic intensity of proposed method is better than that of conventional method.

• Proceedings of the KIPE Conference
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• 2000.07a
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• pp.701-704
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• 2000

A SRG(Switched Reluctance Generator) has many advantages such as efficiency simple controllability low cost and robustness compared with outer machines. But the theories that have been adopted as SRG control methods up to the present are complicated. This paper proposes a simple control methods using PID which controls only a turn-off angle while making turn-on angle signals of SRG constant. controlling the voltage differences between the reference and the real value and calculating the proper turn-off angle of the load variations can implement to keep the output voltage constant. the control method suggested in this paper enhances the efficiency of this system and simplifies the hardware and software by using only the voltage and speed sensors. The proposed method is verified by experiment

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1023_1024
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• 2009

In this paper, a novel 10kV, 50A, 50kHz pulsed power supply based on IGBT stacks is proposed. Proposed scheme consists of series connected 12 IGBT to generate maximum 10kV output pulse and 10kW full bridge phase-shifted zero voltage switching converter to charge DC capacitor voltage. Each IGBTs are sustain the 830V of capacitor voltage at turn off interval. By turn on the each IGBT for the same time it gives the path for the series connection of charged capacitor. From above turn on and off procedure, high voltage repetitive pulse is applied to the load. The synchronization of gating signal is important of series operation of IGBTs. For gating signal synchronization, specially designed gate power circuit using full bridge inverter and pulse transformer is developed to generate IGBT gating signal.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.25 no.3
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• pp.40-49
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• 2011

This paper presents novel circuit topology of half-bridge soft-switching PWM inverter type DC-DC high power converter for DC bus feeding power plants. The proposed DC-DC power converter is composed of a typical voltage source-fed, half-bridge high frequency PWM inverter with a high frequency planar transformer link PWM control scheme and parallel capacitive lossless snubbers. The operating principle of the new DC-DC converter treated here is described by using switching mode-equivalent circuits, together with its unique features. All the active power switches in the half-bridge arms and input DC bus lines can achieve ZCS turn-on and ZVS turn-off commutation transitions. The total turn-off switching losses of the power switches can be significantly reduced. As a result, high switching frequency IGBTs can actually be selected in the frequency range of 40[kHz] under the principle of soft-switching. The performance evaluations of the experimental setup are illustrated practically.

• Proceedings of the KIPE Conference
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• 1999.07a
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• pp.663-666
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• 1999

This paper describes a three-phase converter with high power factor using a scheme of discontinuous current mode(DCM). The proposed system can replace the conventional diode bridge with step-up chopper which is used as a converter for adjustable speed drive. In this system, the current of reactor is zero at turn-on instance because of operation in DCM, while the switch turns off at the instance of maximum current. A soft-switching scheme with lossless snubber was proposed. Therefore, a zero-voltage switching at turn off can be achived by lossless snubber and zero-current switching at turn on can be obtained by operating under DCM. A theoretical analysis and computer simulations with PSpice were done to verify the operation of the proposed system. Also a prototype of hardware system was built and tested for verifying the feasibility of proposed system.

• JOURNAL OF ELECTRICAL WORLD
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• s.255
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• pp.76-83
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• 1998

대용량 파워일렉트로닉스기기의 보다 대용량화$\cdot$소형경량화 및 저손실화 요구에 응하기 위하여 조지전압 4.5KV, 가제어전류 4KA의 고내압$\cdot$대용량 CGT(gate commutated turn-off : 게이트 전류형 턴오프) 사이리스터를 개발하여 상품화하였다. GCT사이리스터는 대용량 파워일렉트로닉스기기의 키파트로서 폭넓게 사용되고 있는 GTO(Gate turn-off)사이리스터와 Turn-on동작이 같고 gto사이리스터의 이점이 저On전압특성을 그대로 갖는 한편 턴오프동작은 ''턴오프 게인이 1''인 새로운 원리에 기초하고 있으며 턴오프특성에서는 GTO사이리스터에 비해 다음과 같은 특징을 갖고있다. (1)GTO사이리스터응용에서 턴오프시 dv/dt를 억제하기 위하여 필요한 스나버회로가 없어도 턴오프동작이 가능하다. (2)축적시간을 종래 GTO사이리스터의 약 1/10로 저감할 수 있다. (3)게이트축적전하를 종래의 GTO사이리스터의 약 1/2로 저감할 수 있다. 이러한 턴오프특성에 의하여 GCT사이리스터는 대용량 파워 일렉트로니스기기에 스나버회로 손실발생의 억제에 의한 손실의 저감, 고속동작화, 직병렬접속 응용에 의한 대용량화의 용이성, 게이트구동회로의 용량을 반감하는 등 많은 메리트를 가져다 준다.

• Proceedings of the KIEE Conference
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• 2006.07b
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• pp.1061-1062
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• 2006

This paper represent improved On-line Turn off, commutation Angle control schemes for switched reluctance motors based on current control. For the purpose of the finding optimal commutation switching angle point, it is utilized turn on and turn off position calculation with inductance vs. current vs. flux linkage analysis method. The goal of proposed paper is the maximization of the energy conversion per stroke and maximizing efficiency and obtaining approximately flat-topped current waveform. The proposed control scheme is demonstrated on a simulation experimental result.