• Journal of the Korea Institute of Information and Communication Engineering
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• v.19 no.1
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• pp.163-168
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• 2015

This paper analyzed the deviation of tunneling current for bottom gate voltage of sub-10 nm asymmetric double gate MOSFET. The asymmetric double gate MOSFET among multi gate MOSFET developed to reduce the short channel effects has the advantage to increase the facts to be able to control the channel current, compared with symmetric double gate MOSFET. The increase of off current is, however, inescapable if aymmetric double gate MOSFET has the channel length of sub-10 nm. The influence of tunneling current was investigated in this study as the portion of tunneling current for off current was calculated. The tunneling current was obtained by the WKB(Wentzel-Kramers-Brillouin) approximation and analytical potential distribution derived from Poisson equation. As a results, the tunneling current was greatly influenced by bottom gate voltage in sub-10 nm asymmetric double gate MOSFET. Especially it showed the great deviation for channel length, top and bottom gate oxide thickness, and channel thickness.

• 한국초전도학회:학술대회논문집
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• v.16
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• pp.58-58
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• 2006

• Proceedings of the Korea Institutes of Information Security and Cryptology Conference
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• 2002.11a
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• pp.195-199
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• 2002

Requirements of a well-designed VPNs(Virtual Private Networks) are scalability, performance, reliability, ease of management, interoperability and security. Tunneling is a important technology to support these. This paper researches VPNs tunneling technologies used currently and proposes VPN service models for the scalability that is a problem in VPNs and for the resource limit of Mobile Station in Mobile VPNs environment.

• Journal of Institute of Control, Robotics and Systems
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• v.9 no.11
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• pp.891-898
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• 2003

Unmanned remote survey system is proposed to measure distance and angle of the present position of micro-tunneling machine from any starting point of entrance. Cross type linear LED that can be controlled remotely is attached to the tunneling machine. Range finder and angle measuring devise fixed to internal of the pipe can scan the center of LED. Distance and angle measuring devises are disposed in the measurable position of the pipe, then the present position of tunneling machine can be calculated automatically from the measurements.

• Proceedings of the Korean Geotechical Society Conference
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• 2006.03a
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• pp.189-198
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• 2006

This paper concerns the finite element (FE) modeling approach for NATM tunneling in water bearing ground within the framework of stress-pore pressure coupled analysis. Fundamental interaction mechanism of ground and groundwater lowering was first examined and a number of influencing factors on the results of coupled FE analysis were identified. A parametric study was then conducted on the influencing factors such as soil-water characteristics, location of hydraulic boundary conditions, the way of modeling drainage flow, among others. The results indicate that the soil-water characteristics plays the most important role in the tunneling-induced settlement characteristics. Based on the results, modeling guidelines were suggested for stress-pore prssure coupled finite element modeling of NATM tunneling.

• Proceedings of the Korean Information Science Society Conference
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• 2010.06d
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• pp.371-374
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• 2010

본 논문은 Vehicular Ad-hoc Network(VANET)환경에서 V2V간의 신뢰적 통신을 지원하기 위해 Safe-Tunneling Zone을 제안한다. 기존의 무선 환경에서는 신뢰적인 경로산출을 위해 ARAN에서 제안된 hop-by-hop 인증을 사용하여 신뢰성은 충족되나 많은 시간과 자원을 소비하는 단점이 있다. 그러나 본 논문에서 제안한 Safe-Tunneling Zone은 송 수신 하고자하는 차량이 각각 신뢰적 에이전트를 선택하고, 선택된 에이전트는 서로의 ID, Rn을 바탕으로 생성된 세션키를 교환함으로서 상호간의 인증을 수행한다. 이와 같이 본 논문에서는 Safe-Tunneling Zone을 통해 기존의 신뢰적 경로 산출 기법보다 수행과정 절차의 간소화, 자원소비 감소, 종단 간의 신뢰적 경로를 통한 데이터의 기밀성 또한 제공 가능하도록 한다.

• Korean Journal of Optics and Photonics
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• v.7 no.2
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• pp.112-119
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• 1996

TM polarized photon tunneling time and the position where TM photons appear after two-dimensional tunneling in a frustrated total internal reflection (FTIR) structure are calculated. This is done by converting the FTIR tunneling problem of TM photons to an electron tunneling problem with a position-dependent effective mass for a heterostructure potential barrier. Derived results are compared with TE photon cases.

• Proceedings of the Korean Geotechical Society Conference
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• 2010.09b
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• pp.96-103
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• 2010

This paper presents of effect of tunneling on pile group of being operated bridge using Three-dimensional numerical modeling to study the effect of coordination of tunneling location under discontinuous group pile. In order to find idealistic tunneling location that causes settlement, change of stress on the piles and movement of soil at a minimum, a fully coupled 3D finite element model is adopted. The study contains pile settlement, axial force on each piles in the group, axial displacement of piles and soil behaviour caused by tunneling. Based on the result some insights into the pile behavior due to tunneling obtained from numerical analysis were mentioned and discussed.

• Proceedings of the Korean Geotechical Society Conference
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• 2002.10a
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• pp.121-134
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• 2002

Tunneling is a very dangerous and expansive work. Especially, the concrete lining works need many long hours and much cost. As an alternative, the unlined tunneling methods including NMT have been developed in various country. These methods have advantages in cost, time and quality. In Korea, many considerations have been conducted to apply the unlined tunneling method in comparatively good rock. Since primary reinforcements play the role of the final supporting system in unlined tunnels, the initial stiffness and long term durability of reinforcements are very important for tunnel safety. To establish the reinforcements standard suitable to Korea, we investigated the foreign standards and construction cases, comparing geological and construction conditions of foreign land and Korea. As the result, we have proposed the standard of primary supporting system for unlined tunnel in aspects of material, design, construction and quality control etc.

• Journal of Electrical Engineering and Technology
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• v.9 no.5
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• pp.1670-1676
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• 2014

This paper presents the modeling of Single Electron Transistor (SET) based on Physical model of a device and its equivalent circuit. The physical model is derived from Schrodinger equation. The wave function of the electrode is calculated using Hartree-Fock method and the quantum dot calculation is obtained from WKB approximation. The resulting wave functions are used to compute tunneling rates. From the tunneling rate the current is calculated. The equivalent circuit model discuss about the effect of capacitance on tunneling probability and free energy change. The parameters of equivalent circuit are extracted and optimized using genetic algorithm. The effect of tunneling probability, temperature variation effect on tunneling rate, coulomb blockade effect and current voltage characteristics are discussed.