• 제목/요약/키워드: tunable capacitors

검색결과 38건 처리시간 0.023초

The Effect of Perimeter on Characteristics of Frequency-Agile Tunable Capacitors

  • Lee, Young Chul
    • 한국정보통신학회:학술대회논문집
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    • 한국정보통신학회 2012년도 추계학술대회
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    • pp.561-563
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    • 2012
  • In this work, tunable capacitors using a finger-type electrode are designed and characterized for frequency-agile RF circuit applications. Their top electrodes with different area and line width are designed in types of the finger for a long conducting perimeter which results in enhanced fringing-electric fields in order to improve their tunability. The tunable varactors were fabricated on a quartz substrate employing a multi-layer dielectric of a para/ferro/para-electric thin film. Compared to the conventional capacitor, finger-type capacitors are characterized in terms of effective capacitance and tunablility. Their effective capacitance and tunability with the long perimeter increase 24~40% and 7~12%, respectively, due to enhanced fringing electric fields from 1 to 2.5 GHz, compared to the conventional ones.

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AlN Based RF MEMS Tunable Capacitor with Air-Suspended Electrode with Two Stages

  • Cheon, Seong J.;Jang, Woo J.;Park, Hyeon S.;Yoon, Min K.;Park, Jae Y.
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제13권1호
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    • pp.15-21
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    • 2013
  • In this paper, a MEMS tunable capacitor was successfully designed and fabricated using an aluminum nitride film and a gold suspended membrane with two air gap structure for commercial RF applications. Unlike conventional two-parallel-plate tunable capacitors, the proposed tunable capacitor consists of one air suspended top electrode and two fixed bottom electrodes. One fixed and the top movable electrodes form a variable capacitor, while the other one provides necessary electrostatic actuation. The fabricated tunable capacitor exhibited a capacitance tuning range of 375% at 2 GHz, exceeding the theoretical limit of conventional two-parallel-plate tunable capacitors. In case of the contact state, the maximal quality factor was approximately 25 at 1.5 GHz. The developed fabrication process is also compatible with the existing standard IC (integrated circuit) technology, which makes it suitable for on chip intelligent transceivers and radios.

구리 전해도금을 이용한 Air-gap 변화 방식의 Tunable capacitor 제조 (Fabricated Tunable Capacitor of Air-gap Variations Using Cu Electroplating)

  • 이재호;서창택;이명복;이종현
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2001년도 추계학술대회 논문집 전기물성,응용부문
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    • pp.62-64
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    • 2001
  • In this paper, we present the fabrication and performance of tunable capacitors with various structural geometry of plates. Experimental devices have been fabricated using Cu-electroplating techniques and standard MEMS techniques. In particular, the thickness of electroplated Cu is designed below $0.5{\mu}m$ for lower actuation voltage. The fabricated tunable capacitors has been tested from $OV{\sim}42V$ and achieves a tuning ratio of $46%{\sim}64.2%$.

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Current-Mode Electronically Tunable Universal Filter Using Only Plus-Type Current Controlled Conveyors and Grounded Capacitors

  • Minaei, Shahram;Turkoz, Sait
    • ETRI Journal
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    • 제26권4호
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    • pp.292-296
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    • 2004
  • In this paper we present a new current-mode electronically tunable universal filter using only plus-type current controlled conveyors (CCCII+s) and grounded capacitors. The proposed circuit can simultaneously realize lowpass, bandpass, and highpass filter functions - all at high impedance outputs. The realization of a notch response does not require additional active elements. The circuit enjoys an independent current control of parameters $\omega_0$ and $\omega_0/Q$. No element matching conditions are imposed. Both its active and passive sensitivities are low.

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Mesh Patterned High Tunable MIM Capacitor

  • 이영철
    • 한국정보통신학회:학술대회논문집
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    • 한국해양정보통신학회 2008년도 추계종합학술대회 B
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    • pp.640-643
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    • 2008
  • In this work, a novel tunable MIM capacitor with the meshed electrode is proposed first in order to improve the tunability characteristics using fringe fields. The capacitors were fabricated on a low-resistivity Si substrate employing lead zinc niobate (PZN) thin film dielectric. The fabricated capacitor with the meshed electrode, whose line width and spacing was $2.5{\mu}m$, achieved the effective capacitance tunability of 31 % that is higher value of 18.5 % than that of the conventional capacitor with the rectangular-type electrode.

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RF MEMS Devices for Wireless Applications

  • Park, Jae Y.;Jong U. Bu;Lee, Joong W.
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제1권1호
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    • pp.70-83
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    • 2001
  • In this paper, the recent progress of RF MEMS research for wireless/mobile communications is reviewed. The RF MEMS components reviewed in this paper include RF MEMS switches, tunable capacitors, high Q inductors, and thin film bulk acoustic resonators (TFBARs) to become core components for constructing miniaturized on chip RF transceiver with multi-band and multi-mode operation. Specific applications are also discussed for each of these components with emphasis on for miniaturization, integration, and performance enhancement of existing and future wireless transceiver developments.

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Compact Metamaterial-Based Tunable Phase Shifter at 2.4 GHz

  • Jung, Youn-Kwon;Lee, Bomson
    • Journal of electromagnetic engineering and science
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    • 제13권2호
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    • pp.137-139
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    • 2013
  • A compact metamaterial (MTM)-based tunable phase shifter consisting of four unit cells with a simple DC bias circuit has been designed at 2.4 GHz. The variable series capacitors and shunt inductors that are required to be loaded periodically onto a host transmission line are realized employing only chip variable capacitors (varactors). In addition, the proposed phase shifter requires only one DC bias source to control the varactors, with the matching condition of the MTM line automatically satisfied. The measured phase shifting range is $285.2^{\circ}$ (from $-74.2^{\circ}$ to $211^{\circ}$). The measured insertion loss is approximately 1.5 dB. The circuit/electromagnetic-simulated and measured results are in good agreement.

Design and Fabrication of a Phase Shifter RFIC using a Tunable Multi-layer Dielectric

  • 이영철
    • 한국산업정보학회논문지
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    • 제19권2호
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    • pp.45-49
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    • 2014
  • In this work, a phase shifter radio-frequency integrated chip (RFIC) using a simple all-pass network is presented. As a tuning element of the phase shifter RFIC, tunable capacitors with a multi-layer dielectric of a para-/ferro-/para-electrics using a high tunable BST ferroelectric and a low-loss BZN paraelectric thin film were utilized. In order to evaluate and analyze the fabricated phase shifter RFIC, the same elements such as an inductor and capacitor integrated into it are also fabricated and tested. The designed phase shifter RFIC was fabricated on a quartz substrate in the size of $1.16{\times}1.21mm^2$. As the test results, the maximum phase difference of $350^{\circ}$ is obtained at 15 V and its tuning frequency bandwidth is 90 MHz from 2.72 to 2.81GHz.

광대역 VHF 마이크로스트립 가변대역통과 여파기의 설계 (Design of Wide Band VHF Microstrip Tunable Band-Pass Filters)

  • 박병호;정용채;윤상원;장익수
    • 전자공학회논문지A
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    • 제29A권10호
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    • pp.24-28
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    • 1992
  • A new design method of microstrip wide band VHF tunable bandpass filters using varacter diodes is presented. In the proposed filter both the input and output ports are coupled through capacitors, and an open micro-strip line is inserted between the coupled line in order to obtain the desired degree of coupling. The optimized filter responseses for the frequency range of 220-404MHz by TOUCH-STONE are compared with the measured ones.

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Electronically Tunable Current-Mode Second-Order Multifunctional Filter Using FTFNs and Dual-Output OTAs

  • Tangsrirat, Worapong;Anuntahirunrat, Kongsak;Surakampontorn, Wanlop
    • 제어로봇시스템학회:학술대회논문집
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    • 제어로봇시스템학회 2001년도 ICCAS
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    • pp.99.2-99
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    • 2001
  • An electronically tunable current-mode second-order multifunctional filter is described in this paper. The proposed filter consists of two four-terminal floating nullors (FTFNs), two dual-output OTAs and two grounded capacitors. The circuit can simultaneously realize the lowpass, bandpass and highpass current transfer functions from the same configuration without changing the circuit configuration and elements. The natural angular frequency we and the parameter wo/Q can be orthogonally controlled through adjusting the transconductance gain of OTA. PSPICE simulation results are employed to confirm the circuit performance.

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