• Proceedings of the IEEK Conference
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• 1999.06a
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• pp.911-913
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• 1999

Shallow Trench Isolation (STI) has become the most promising isolation scheme for ULSI applications. The stress of STI structure is one of several factors to degrade characteristics of a device. The stress contours or STI structure vary with the trench depth. Isolation characteristics of STI was analyzed as the depth of trench varied. And transistor characteristics was compared. Isolation punch-through voltage for n$^{＋}$ to pwell and p$^{＋}$ to nwell increased as trench depth increased. n$^{＋}$ to pwell leakage current had nothing to do with trench depth but n$^{＋}$ to pwell leakage current decreased as trench depth increased. In the case of transistor characteristics, short channel effect was independent on trench depth and inverse narrow width effect was greater for deeper trenches. Therefore in order to achieve stable device, it is important to minimize stress by optimizing trench depth.

• Proceedings of the KIEE Conference
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• 2001.11a
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• pp.26-28
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• 2001

A Trench schottky diode with guard ring is proposed to improve the forward current density and reverse breakdown voltage. The simulation results by Silvaco have shown that the reverse breakdown voltage of the proposed device was found to be 22.1V while that of conventional trench device was 17.25V. The breakdown voltage of the proposed structure was 28.1% higher than that of the conventional trench structure.

• Journal of the Semiconductor & Display Technology
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• v.20 no.4
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• pp.167-170
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• 2021

Integrated passive device (IPD) technology has emerged with the need for 5G. In order to integrate and miniaturize capacitors inside IPD, various studies are actively performed using high-k materials and trench structures. In this paper, an EM(Electromagnetic) simulation study was performed by applying an oxide dielectric to the capacitors having a various trench type structures. Commercially available materials HfO₂, Al₂O₃, and Ta₂O₅ are applied to non, circle, trefoil, and quatrefoil type trench structures to confirm changes in each material or structure. As a result, the bigger the capacitor area and the higher dielectric constant of the oxide dielectric, the insertion loss tended to decrease.

• Journal of The Korean Society of Agricultural Engineers
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• v.46 no.2
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• pp.93-103
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• 2004

In trench excavation, essential factor of earth-retaining temporary work structure should be easy taking to pieces and movement, and dead weight must be less. This paper studies about the light weight material and application as earth-retaining structure to prevent the slope failure of sand soil ground caused by the variation of groundwater level in trench excavation. That is, light weight earth-retaining structural is proposed and a simulation with FEM on application of proposed structural in sandy soil is presented. The results are summarized as follows; (1) The study proposed FRP H-shaped pannel for the light weight member, and also presented estimation method about stability. (2) Mechanical property (bending moment, shear force, axial force, displacement) were changed according to groundwater level, but these values had been within enough safety rate and allowable stress. Therefore, proposed light weight pannel with FRP is available for bracing structure in trench excavation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.11
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• pp.981-986
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• 2008

The conventional IGBT has two problems to make the device taking high performance. The one is high on state voltage drop associated with JFET region, the other is low breakdown voltage associated with concentrating the electric field on the junction of between p base and n drift. This paper is about the structure to effectively improve both the lower on state voltage drop and the higher breakdown voltage than the conventional IGBT. For the fabrication of the circular trench IGBT with the circular trench layer, it is necessary to perform the only one wet oxidation step for the circular trench layer. Analysis on both the on state voltage drop and the breakdown voltage show the improved values compared to the conventional IGBT structure. Because the circular trench layer disperses electric field from the junction of between p base and n drift to circular trench, the breakdown voltage increase. The on state voltage drop decrease due to reduction of JFET region and direction changed of current path which pass through reversed layer channel. The electrical characteristics were studied by MEDICI simulation results.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.4
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• pp.385-390
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• 2023

In this paper, the 1,700 V level SiC-based power MOSFET device widely used in electric vehicles and new energy industries was designed, that is, a single trench gate power MOSFET structure and a double trench gate power MOSFET structure were proposed to analyze electrical characteristics while changing the design and process parameters. As a result of comparing and analyzing the two structures, it can be seen that the double trench gate structure shows quite excellent characteristics according to the concentration of the drift layer, and the breakdown voltage characteristics according to the depth of the drift layer also show excellent characteristics of 200 V or more. Among them, the trench gate power MOSFET device can be applied not only to the 1,700 V class but also to a voltage range above it, and it is believed that it can replace all Si devices currently applied to electric vehicles and new energy industries.

• 한국컴퓨터산업교육학회:학술대회논문집
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• 2003.11a
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• pp.67-70
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• 2003

In this paper, propose a new structure of MOFET(Metal-Oxide-Semiconductor Field Effect Transistor) which is widely application for semiconductor technologies. Eleminate the latch-up effect caused by closed devices when conpose a electronic circuit using proposed devices. In this device have a completely isolation structure, and advantage of leakage current elimination. Each independent devices are isolated by trench-well and oxide layer of SOI substrate. Using trench gate and self aligned techniques reduces parasitic capacitance between gate and source, drain. In this paper, we proposed the new structure of SOI MOSFET which has completely isolation and contains trench gate electrodes and SOI wafers. It is simulated by MEDICI that is device simulator.

• Journal of Electrical Engineering and Technology
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• v.9 no.6
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• pp.1995-2003
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• 2014

Power semiconductor devices have been the major backbone for high-power electronic devices. One of important parameters in view of power semiconductor devices often characterize with a high breakdown voltage. Therefore, many efforts have been made, since the development of the Insulated Gate Bipolar Transistor (IGBT), toward having higher level of breakdown voltage, whereby the typical design thereof is focused on the structure using the field ring. In this study, in an attempt to make up more optimized field-ring structure, the characteristics of the field ring were investigated with the use of theoretical arithmetic model and methodologically the design of experiments (DOE). In addition, the IGBT having the field-ring structure was designed via simulation based on the finding from the above, the result of which was also analyzed. Lastly, the current study described the trench field-ring structure taking advantages of trench-etching process having the improved field-ring structure, not as simple as the conventional one. As a result of the simulation, it was found that the improved trench field-ring structure leads to more desirable voltage divider than relying on the conventional field-ring structure.

• ETRI Journal
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• v.36 no.5
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• pp.841-846
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• 2014

This study proposes a novel optical sensor structure based on a refractometer combining a bend waveguide with an air trench. The optical sensor is a $1{\times}2$ splitter structure with a reference channel and a sensing channel. The reference channel has a straight waveguide. The sensing channel consists of a U-bend waveguide connecting four C-bends, and a trench structure to partially expose the core layer. The U-bend waveguide consists of one C-bend with the maximum optical loss and three C-bends with minimum losses. A trench provides a quantitative measurement environment and is aligned with the sidewall of the C-bend having the maximum loss. The intensity of the output power depends on the change in the refractive index of the measured material. The insertion loss of the proposed optical sensor changes from 3.7 dB to 59.1 dB when the refractive index changes from 1.3852 to 1.4452.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.421-424
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• 2004

As the deep sub-micron devices are recently integrated high package density, novel process method for sub $0.1{\mu}m$ devices is required to get the superior thin gate oxide characteristics and reliability. However, few have reported on the electrical quality and reliability on the thin gate oxide. In this paper I will recommand a novel shallow trench isolation structure for thin gate oxide $30{\AA}$ of deep sub-micron devices. Different from using normal LOCOS technology, novel shallow trench isolation have a unique 'inverse narrow channel effects' when the channel width of the devices is scaled down shallow trench isolation has less encroachment into the active device area. Based on the research, I could confirm the successful fabrication of shallow trench isolation(STI) structure by the SEM, in addition to thermally stable silicide process was achiever. I also obtained the decrease threshold voltage value of the channel edge and the contact resistance of $13.2[\Omega/cont.]$ at $0.3{\times}0.3{\mu}m^2$. The reliability was measured from dielectric breakdown time, shallow trench isolation structure had tile stable value of $25[%]{\sim}90[%]$ more than 55[sec].