• Title/Summary/Keyword: traveling-wave amplifier

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Design and Fabrication of a High-Power Pulsed TWTA for Millimeter-Wave(Ka-Band) Multi-Mode Seeker (밀리미터파(Ka 밴드) 복합모드 탐색기용 고출력 펄스형 진행파관 증폭기(TWTA) 설계 및 제작)

  • Song, Sung-Chan;Kim, Sun-Ki;Lee, Sung-Wook;Min, Seong-Ki
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.30 no.4
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    • pp.307-313
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    • 2019
  • The traveling wave tube amplifier (TWTA), which can be applied to the Ka-band millimeter-wave multi-mode seeker, consists of an high voltage power supply(HVPS), a grid modulator, a command and control, and an RF assembly. We designed a power supply that generates a -17.9 kV high voltage by synchronizing the pulse repetition frequency(PRF) and power supply switching frequency(i.e. synchronization frequency), and a high-speed grid-switching modulator for RF pulse modulation. The TWTA, which is fabricated through miniaturization with a volume of 3.18 L, has high pulse switching characteristics of up to 18.5 ns. The maximum rise/fall time of the grid on/bias signal and peak power is more than 564.9 W. Moreover, an excellent spurious performance of -68.4 dBc or less was confirmed within the range of PRF and PRF/2.

Mode Locking of AlGaAs Semicondctor Laser Traveling Wave Amplifiers (AlGaAs 진행파 반도체 레이저 광증폭기의 모드록킹)

  • 이창희;강승구;정기웅;임시종;유태경
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.32A no.1
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    • pp.119-128
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    • 1995
  • We report hybrid and passive mode-locking results of tilted-stripe AlGaAs semiconductor laser traveling wave amplifiers with saturable absorbers. Dependence ofthe pulse width on the mode locking frequency, the bandwidth of spectral filters, and the bias current of the laser amplifier are investigated. We generate 4 ps optical pulses by using the hybrid mode locking technique. The repetition rate and the peak power of generated pulses are 516 MHz and 170 mW, respectively. The tuning range of uor mode locked laser is 10 nm with the center wavelength of 780 nm. We also generate 2.6 ps optical pulses with peak power of 830 mW by using the passive mode locking technique.

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Structural dependence of a gain saturation and noise figure in a traveling-wave semiconductor optical amplifier (진행파형 반도체 광증폭기에서 이득포화 및 잡음특성의 활성층 구조 의존성)

  • Jang, Se-Yun;Sim, Jong-In;Lee, Jeong-Seok;Kim, Ho-In;Yun, In-Guk;Kim, Seung-U;Sin, Hyeon-Cheol;Eo, Yeong-Seon
    • Proceedings of the Optical Society of Korea Conference
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    • 2004.02a
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    • pp.312-313
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    • 2004
  • The optical gain saturation and noise figure characteristics of 1550nm traveling-wave semiconductor optical amplifiers are analyzed experimentally and theoretically. The result shows that there is an optimum active layer thickness for high saturation output power and low noise figure.

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A Developing Technique of EHF TWTA Using Linearizer and Drive Amplifier for Satellite Communications (선형화기와 구동 증폭기를 이용한 위성통신용 EHF 대역 진행파관 증폭기 개발 방안)

  • Hong In-Pyo
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.17 no.9 s.112
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    • pp.852-859
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    • 2006
  • This paper suggests a developing approach of EHF TWTA for satellite communications. In order to improve RF performance and gain, we design and realize an EHF TWTA using a linearizer and drive amplifiers. Through the embodiment and experiment of 80 W EHF TWTA, this method satisfies the design specifications. Therefore, this approach is very useful and can be used to develop the similar equipments.

Compensation of Nonlinear Distortion Using a Predistorter Based on Real-Valued Fixed Point Iterations in MC-CDMA Systems (MC-CDMA 시스템에서 실수 고정점 반복 기반의 전치왜곡기를 이용한 비선형 왜곡 보상)

  • Jeon, Jae-Hyun;Shin, Yoan-Shin;Im, Sung-Bin
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.37 no.1
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    • pp.1-11
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    • 2000
  • We propose a predistorter to compensate for nolinear distortion induced by a high power amplifier employed in multi carrier-code division multiple access (MC-CDMA) systems. The proposed scheme rests upon the fixed point iteration (FPI) associated with the contraction mapping theorem. Unlike the predistorter based on the FPI already presented by the authors in other literatures which operates on complex-valued modulation signals, the proposed predistorter in this paper deals with real-valued FPI on modulation signal amplitudes, resulting in less complexity. Simulation results on a BPSK-modulated, 64-subcarrier synchronous MC-CDMA baseband system with a traveling wave tube amplifier in the transmitter, indicate that the proposed predistorter achieves significant improvement in terms of bit error rate and total degradation over those without the predistorter. Moreover, the proposed predistorter outperforms the complex-valued counterpart, in particular, for small output back-off levels.

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Design of a Microwave Distributed Amplifier Considering Capacitance Absorption Capability (정전용량 흡수 능력을 고려한 마이크로파 분포증폭기 설계)

  • Kim, Nam-Tae
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.46 no.11
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    • pp.50-55
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    • 2009
  • In this paper, a distributed amplifier is designed using distributed network synthesis that provides the optimum absorption capability of a capacitance. Transfer functions of filters, which consist of the amplifier, are synthesized by a low-pass Chebyshev approximation. Capacitances that a filter network can absorb are calculated as a function of its minimum insertion loss(MIL) and ripple. Active devices in a distributed amplifier are modeled as equivalent circuits by using their S-parameters, and their equivalent capacitances are absorbed into filter structures by properly adjusting the MIL and ripple of a transfer function. As an application example, a distributed amplifier with the gain of about 12.5dB is designed that operates over the frequency range between 0.1 and 7.5GHz. Experimental results prove that distributed network synthesis, which considers capacitance absorption capability, is useful to the design of distributed amplifiers.

A Study on the Design of Amplifier for Microwave using GaAs FET (GaAs FET를 이용한 초고주파용 증폭기 설계에 관한 연구)

  • 김용기;이승무;홍의석
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.29A no.2
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    • pp.18-23
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    • 1992
  • Recently, SSPAs(Solid-State Power Amplifiers) with high linearity and efficiency replace TWTAs (Traveling-Wave-Tube Amplifiers) in satellite transponders. In this paper, a power amplifier with maximum output power is designed and constructed using GaAs FET(MGF-1302) as a test model for the development of SSPAs. For conjugate matching of input and output network, transimission lines and stubs are optimized using microwave CAD program, LINMIC+. Power amplifier is realized on the teflon substrate($\in$S1rT=2.45) with a bandwidth of 1GHz at a center frequency of 8GHz. Maximum stable gain of simulation and simulation and experimental result is obtained 9.23, 7.65 dB, respectively.

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A Developing Approach of 600 W SHF TWTA for Communications Using Cathode Ripple Reduction Technique

  • Hong, In-Pyo
    • Journal of electromagnetic engineering and science
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    • v.8 no.3
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    • pp.119-128
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    • 2008
  • In this paper, we propose a developing approach of 600 W super high frequency(SHF) traveling wave tube amplifier (TWTA) for communications. Also, we make a TWTA called the experimental-TWTA(ETWTA), which uses a cathode ripple reduction technique to improve RF performance. After implementation, we discuss, and compare it with some other TWTAs. Its RF performance is better than that of other TWTAs. Therefore, this methodology can be used to develop the high power SHF TWTA for communications.

A Design and Fabrication of a High Power SSPA for C-Band Satellite Communication (C-Band 위성통신용 고출력 증폭기의 설계 및 제작)

  • 예성혁;윤순경;전형준;나극환
    • Proceedings of the Korean Society of Broadcast Engineers Conference
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    • 1996.06a
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    • pp.27-31
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    • 1996
  • In this paper, The SSPA(Solid State Power Amplifier) is 100 watts amplifier which is used with C-Band Satellite communication Up-Link frequency, 5.875 ∼6.425 GHz. SSPA requires more output power than is available from a single GaAs FET with result it is necessary to combine the output of many device. To achieve a high power, it is important to make a good N-way power divider which has a small different phase, good combining efficiency and high power handling capability. The reliability of Power GaAs FET decrease with increasing junction temperature, power amplifier in general dissipate amount of power. It is important to provide them with a heatsink and a temperature compensation circuit to dispose of the unwanted heat. To compensate temperature, Using PIN diode attenuator, it is enable to get a precision gain control. The output power of the SSPA is more than 100 watt with which the TWTA (Traveling-Wave Tube Amplifier) can be replaced. Each stage was measured by the Network analyzer PH8510C, Power meter Booton 42BD, The gain is more than 53 dB, flatness is less than 1.5 dB.

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Right-Angle-Bent CPW for the Application of the Driver-Amplifier-Integrated 40 Gbps TW-EML Module

  • Yun, Ho-Gyeong;Choi, Kwang-Seong;Kwon, Yong-Hwan;Choe, Joong-Seon;Moon, Jong-Tae;Lee, Myung-Hyun
    • ETRI Journal
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    • v.28 no.5
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    • pp.648-651
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    • 2006
  • In this letter we present a right-angle-bent coplanar waveguide (CPW) which we developed for the application of the driver amplifier-integrated (DAI) 40 Gbps traveling wave electroabsorption modulated laser module. The developed CPW realized parallel progression of the radio frequency (RF) and light using a dielectric overlay structure and wedge bonding on the bending section. The measured $S_{11}$ and $S_{21}$ of the developed CPW were kept below-10 dB up to 35 GHz and -3 dB up to 43 GHz, respectively. These measured results of the CPW were in good agreement with the simulation results and demonstrated the applicability of the CPW to the 40 Gbps communication module.

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