• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.469-472
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• 1999

CeO$_2$ thin films have used in wide applications such as SOI, buffer layer, antirflection coating, and gate dielectric layer. CeO$_2$takes one of the cubic system of fluorite structure and shows similar lattice constant (a=0.541nm) to silicon (a=0.543nm). We investigated CeO$_2$films as buffer layer material for nonvolatile memory device application of a single transistor. Aiming at the single transistor FRAM device with a gate region configuration of PZT/CeO$_2$ /P-Si , this paper focused on CeO$_2$-Si interface properties. CeO$_2$ films were grown on P-type Si(100) substrates by 13.56MHz RF magnetron sputtering system using a 2 inch Ce metal target. To characterize the CeO$_2$ films, we employed an XRD, AFM, C-V, and I-V for structural, surface morphological, and electrical property investigations, respectively. This paper demonstrates the best lattice mismatch as low as 0.2 % and average surface roughness down to 6.8 $\AA$. MIS structure of CeO$_2$ shows that breakdown electric field of 1.2 MV/cm, dielectric constant around 13.6 at growth temperature of 200 $^{\circ}C$, and interface state densities as low as 1.84$\times$10$^{11}$ cm $^{-1}$ eV$^{-1}$ . We probes the material properties of CeO$_2$ films for a buffer layer of FRAM applications.

• Proceedings of the KOR-BRONCHOESO Conference
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• 1991.06a
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• pp.15-15
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• 1991

한국어 자음에 대한 생리적인 분류는 조음점 및 조음발법에 따라 다시 세분화할 수 있는데 그중에서 조음발법에 따라 파열음, 마찰음, 파찰음 및 비음들 여러가지로 분류할 수 있다. 그중 특히 파열음은 그 개방하는 방법에 따라 연음(lenis), 경음(glottalized) 및 기식음(aspirated)등으로 구분하는데 이러한 각음을 육안으로 확인하면 모음이 발성되기 위한 성대진동이 있기전의 자음을 위한 성대의 운동의 현상을 보면 기식음에서는 성대열림이 가장 크고 연음에서도 열림이 크지만 기식음보다는 적고 경음에서는 성대의 열림이 가장 작았다. 이러한 현상은 후두내시경에 의해 쉽게 확인할 수 있었는데 이것을 과학적으로 규명하기 위해서는 여러연구에 의해 가능하나 흔히 후두근전도 검사에 의한 성대내전근과 외전근의 역할의 차이를 비교함으로서 가능해지리라 예상되어 본 연구를 시행하였다. 사용된 문형 또는 단어는 한가지를 제외하고는 모두 의미있는 단어를 사용하였으며 EMG recording을 위해 사용된 근육은 후두내전근인 Vocalis muscle과 후두외전근인 Posterior cricoarytenoid muscle이 사용되었고 전기신호는 computer data processing system에 의해 분석되어졌다. 결과는 내시경에 의한 성대열림의 거리측정 결과를 분석함과 동시에 후두내근에 대한 근전도검사에 의한 분석을 토대로 하였으며 이를 간단히 설명하면 이제까지 많은 사람들은 한국어 자음에 대한 각각의 특징적인 현상들을 주로 성대내전근의 역할에 의해 규명하였으나 본 결과로는 성대내전근의 역할도 중요하지만 성대외전근의 역할 또한 상호 연관성을 가지면서 매우 중요한 역할을 한다는 점이다.for the Isotropic plates can be used. Use of some coefficients can produce "exact" value for laminates with such configuration.trap with 2.88[eV] deep of injected space charge from the chathode in the crystaline regions. The origin of ${\alpha}$$_2$ peak was regarded as the detrapping process of ions trapped with 0.9[eV] deep originated from impurity-ion remained in the specimen during production process of the material, in the crystalline regions. The origin of ${\beta}$ peak was concluded to be due to the depolarization process of "C=0"dipole with the activation energy of 0.75[eV] in the amorphous regions. The origin of ${\gamma}$ peak was responsible to the process combined with the depolarization of "CH$_3$", chain segment, with the activation energy of carriers from the shallo

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1990.10a
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• pp.98-101
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• 1990

In order to investigate the laser effects resulted from the behaviors of carriers for BOPP film, experiment of TSC were carried out on the specimen with 15[$\mu\textrm{m}$] thick irradiated by He-Ne laser. The TSC spectras were observed in the temperature range of -100[$^{\circ}C$] to 130[$^{\circ}C$] with the electric field of 20∼60[MV/m], had show four of the distinguished peak such as ${\alpha}$$_1$, ${\alpha}$$_2$, ${\beta}$ and ${\gamma}$, which appeared at 115, 80, 17 and -30[$^{\circ}C$] respectively. Specially, ${\alpha}$$_1$ was observed and anomalous TSC flowing in the same direction as the charging current on the high-electric field such as 50∼60[MV/m]. In according on the consequences obtained from the studies, the origin of ${\alpha}$$_1$peak was attributed to the detrapping process form trap with 2.88[eV] deep of injected space charge from the chathode in the crystaline regions. The origin of ${\alpha}$$_2$ peak was regarded as the detrapping process of ions trapped with 0.9[eV] deep originated from impurity-ion remained in the specimen during production process of the material, in the crystalline regions. The origin of ${\beta}$ peak was concluded to be due to the depolarization process of "C=0"dipole with the activation energy of 0.75[eV] in the amorphous regions. The origin of ${\gamma}$ peak was responsible to the process combined with the depolarization of "CH$_3$", chain segment, with the activation energy of carriers from the shallow trap with 0.4[eV], in he amorphous regions.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.8
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• pp.486-490
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• 2014

$Al_2O_3$ films on silicon carbide were fabricated by Aerosol deposition with annealing temperature at $800^{\circ}C$ and $1,000^{\circ}C$. The effect of thermal treatment on physical properties of $Al_2O_3$ thin films has been investigated by XRD (X-ray diffraction), AFM (atomic force microscope), SEM (scanning electron microscope), and AES (auger electron spectroscopy). Also electrical properties have been investigated by Keithley 4,200 semiconductor parameter analyzer to explain the interface trapped charge density ($D_{it}$), flatband voltage ($V_{FB}$) and leakage current ($I_o$). $Al_2O_3$ films become crystallized with increasing temperature by calculating full width at half maximum (FWHM) of diffraction peaks, also surface morphology is observed by topography measurement in non-contact mode AFM. $D_{it}$ was $2.26{\times}10^{-12}eV^{-1}.cm^{-2}$ at $800^{\circ}C$ annealed sample, which is the lowest value in all samples. Also the sample annealed at $800^{\circ}C$ has the lowest leakage current of $4.89{\times}10^{-13}A$.

• Bulletin of the Korean Chemical Society
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• v.21 no.10
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• pp.969-972
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• 2000

[Fe II Fe III $BPLNP(OAc)_2](BPh_4)_2$ (1), a new model for the reduced form of the purple acid phosphatases, has been synthesized by using a dinucleating ligand, 2,6-bis[((2-pyridylmethyl)(6-methyl-2-pyridylmethyl)ami-no)methyl]-4-nitrophenol (HBPLNP) . Complex 1 has been studied by electronic spectral, NMR, EPR, SQUID, and electrochemical methods. Complex 1 exhibits two strong bands at 498 nm $(\varepsilon=$ 2.6 ${\times}10^3M-^1cm-^1)$ and 1363 nm $(\varepsilon=$ 5.7 ${\times}10^2M-^1cm-^1)$ in $CH_3CN.$ These are assigned to phenolate-to-FeIII and intervalence charge-transfer transitions, respectively. NMR spectrum of complex 1 exhibits sharp isotropically shifted resonances, which number is half of those expected for a valence-trapped species, indicating that electron transfer between FeⅡ and FeⅢ centers is faster than NMR time scale at room temperature. Complex 1 undergoes quasireversible one-electron redox processes. The $FeIII_2/FeIIFeIII$ and $FeIIFeIII/FeII_2$ redox couples are at 0.807 and 0.167 V ver-sus SCE, respectively. It has Kcomp = 5.9 ${\times}$10 1s(acetato) ligand combination sta-bilizes a mixed-valence FeIIFeIII complex in the air. Interestingly, complex 1 exhibits intense EPR signals at g = 8.56, 5.45, 4.30 corresponding to mononuclear high-spin FeⅢ species, which suggest a very weak magnetic coupling between the iron centers. Magnetic susceptibility study shows that there is a very weak antiferromag-netic coupling (J = $-0.78cm-^1$, H = $-2JS_1${\times}$S_2)$ between FeII and FeIII centers. Thus, we can suggest that complex 1 has a very weak antiferromagnetic coupling between the iron centers due to the electronic effect of the nitro group in the bridging phenolate ligand.

• Bulletin of the Korean Chemical Society
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• v.19 no.6
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• pp.654-660
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• 1998

$[Fe^{II}Fe^{III}BPLMP(OAc)_2](BPh_4)_2$ (1), a new model for the reduced form of the purple acid phosphatases, has been synthesized by using a dinucleating ligand, 2,6-bis[((2-pyridylmethyl)(6-methyl-2-pyridylmethyl)amino) methyl]-4-methylphenol (HBPLMP). Complex I has been characterized by X-ray diffraction method as having (μ-phenoxo)bis(acetato)diiron core. Complex 1 was crystallized in the monoclinic space group C2/c with the following cell parameters: a=41.620(6) Å, b=14.020(3) Å, c=27.007(4) Å, β=90.60(2)°, and Z=8. The iron centers in the complex 1 are ordered as indicated by the difference in the Fe-O bond lengths which match well with typical $Fe^{III}-O\; and\; Fe^{II}-O$ bond lengths. Complex 1 has been studied by electronic spectral, NMR, EPR, SQUID, and electochemical methods. Complex 1 exhibits strong bands at 592 nm, 1380 nm in $CH_3CN$ (ε = 1.0 × 103 , 3.0 × 102). These are assigned to $phenolate-to-Fe^{III}$ and intervalence charge-transfer transitions, respectively. Its NMR spectrum exhibits sharp isotropically shifted resonances, which number half of those expected for a valence-trapped species, indicating that electron transfer between $Fe^{II}\;and\;Fe^{III}$ centers is faster than NMR time scale. This complex undergoes quasireversible one-electron redox processes. The $Fe^{III}_2/Fe^{II}Fe^{III}\;and\;Fe^{II}Fe^{III}/Fe^{II}_2$ redox couples are at 0.655 and -0.085 V vs SCE, respectively. It has $K_{comp}=3.3{\times}10^{12}$ representing that BPLMP/bis(acetate) ligand combination stabilizes a mixed-valence $Fe^{II}Fe^{III}$ complex in the air. Complex 1 exhibits a broad EPR signal centered near g=1.55 which is a characteristic feature of the antiferromagnetically coupled high-spin $Fe^{II}Fe^{III}$ system $(S_{total}=1/2)$. This is consistent with the magnetic susceptibility study showing the weak antiferromagnetic coupling $(J= - 4.6\;cm^{-1},\; H= - 2JS_1{\cdot}S2)$ between $Fe^{II}\; and \;Fe^{III}$center.

• Nuclear Engineering and Technology
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• v.51 no.5
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• pp.1428-1435
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• 2019

The total ionizing dose (TID) and non ionizing energy loss (NIEL) effects of 100 MeV phosphorous ($P^{7+}$) and 80 MeV nitrogen ($N^{6+}$) ions on 200 GHz silicon-germanium heterojunction bipolar transistors (SiGe HBTs) were examined in the total dose range from 1 to 100 Mrad(Si). The in-situ I-V characteristics like Gummel characteristics, excess base current (${\Delta}I_B$), net oxide trapped charge ($N_{OX}$), current gain ($h_{FE}$), avalanche multiplication (M-1), neutral base recombination (NBR) and output characteristics ($I_C-V_{CE}$) were analysed before and after irradiation. The significant degradation in device parameters was observed after $100MeV\;P^{7+}$ and $80MeV\;N^{6+}$ ion irradiation. The $100MeV\;P^{7+}$ ions create more damage in the SiGe HBT structure and in turn degrade the electrical characteristics of SiGe HBTs more when compared to $80MeV\;N^{6+}$. The SiGe HBTs irradiated up to 100 Mrad of total dose were annealed from $50^{\circ}C$ to $400^{\circ}C$ in different steps for 30 min duration in order to study the recovery of electrical characteristics. The recovery factors (RFs) are employed to analyse the contribution of room temperature and isochronal annealing in total recovery.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 1991.04a
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• pp.75-79
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• 1991

고도로 산업화가 진행됨에 따라 회전기계는 더욱 중요시되고 있으며 이의 성능 향상에 부단한 노력이 경주되고 있다. 특히 우주 시대의 개막과 더불어 우주선 및 인공위성에 사용하기 위해 초소형이며 초고속의 고성능회전모타 를 개발하기에 이르렀다. 한 예로서 미국립항공우주국(NASA)의 스페이스셔 틀에 사용되는 주엔진 터보펌프를 들 수 있는데 이 터보펌프는 접시만한 크 기로써 71000마력을 생성해 낸다. 이러한 가공할 만한 에너지 밀도와 유량을 감당해 내려면 종래의 회전기계보다는 훨씬 더 높은 회전속도를 가져야 한 다. 이러한 회전체는 큰 관성부하와 진 동 및 동안정성의 문제등을 내포하고 있다. 고성능 회전기계의 또다른 예로서 초정밀 가공용 공작기계를 들 수 있 다. 선반 혹은 밀링머신으로 초정밀가공을 행하기 위해서는 회전축의 진동이 극히 작아야 한다. 이와 같이 오늘날 갈수록 초고성능 초정밀도를 추구함에 있어서 회전축의 진동을 현장에서 모니터링하고 이 진동데이터를 분석하여 회전축을 제어하는 것이 강력히 요구되어진다. 따라서 in-situ 측정이 중요성 을 띠게 되었는데 이는 제어기술의 바탕이 되는 자료를 현장에서 제공할 수 있기 때문이다. 회전축 진동측정의 대상이 되는 것들은 모타, 발전기, 엔진 및 터빈등을 대표적으로 들 수가 있다. 여기서 소형회전기계의 축표면과 같 이 비교적 곡면을 이루고 있는 부분의 진동변위 측정에 신중한 고려가 요구 되어 진다. 이는 축의 곡면도에 따라 감도가 변화하기 때문이다. 따라서 평 판에 대한 calibration 챠트를 회전기계축진동 변위환상에 이용하면 곡률에 따라서 오차가 생기게 된다. 본 연구에서는 비접촉 축진동측정시 발생되는 오차에 대하여 검토하고자 한다. from the studies, the origin of ${\alpha}$$_1$peak was attributed to the detrapping process form trap with 2.88[eV] deep of injected space charge from the chathode in the crystaline regions. The origin of ${\alpha}$$_2$ peak was regarded as the detrapping process of ions trapped with 0.9[eV] deep originated from impurity-ion remained in the specimen during production process of the material, in the crystalline regions. The origin of ${\beta}$ peak was concluded to be due to the depolarization process of "C=0"dipole with the activation energy of 0.75[eV] in the amorphous regions. The origin of ${\gamma}$ peak was responsible to the process combined with the depolarization of "CH$_3$", chain segment, with the activation energy of carriers from the shallow trap with 0.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 1991.04a
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• pp.147-152
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• 1991

양단이 고정된 보가 변형할 때에는 중간 평면의 신장을 수반하게 된다. 운동 의 진폭이 증가함에 따라 이 신장이 보의 동적 응답에 미치는 영향은 심각 하게 된다. 이러한 현상은 응력과 변형도와의 관계가 선형적이라 하더라도 변형도와 변위와의 관계식은 비선형이 되며 결국은 보의 비선형 운동방정식 을 낳게된다. 보는 연속계이긴하지만 근사를 위하여 다자유도계로 간주할 수 있다. 비선형 다자유도계에 있어서는 선형화된 계의 고유진동수끼리 적절한 관계를 가질 때 내부공진이 발생할 수 있다. 양단이 고정된 곧은 보의 비선 형 동적응답이 그동안 많이 연구되어 오고 있으며, 집중질량을 가지고 직각 으로 굽은 보의 해석을 위하여 내부공진을 고려한 해석적 혹은 실험적 연구 가 이루어져 왔다. 그중에서도 Nayfeh등은 조화가진 하의 핀과 꺾쇠로 고정 된(hinged-clamped) 보의 정상상태응답을 해석하기 위해 두 모우드 사이의 내부공진을 고려하였다. 이 연구에서는 세 모우드 사이의 내부공진을 고려하 여 강제진행 중인 보의 비선형 해석을 다루고자 한다. 이 문제에 관심을 갖 게 된 동기는 "연속계의 비선형 해석에서 더 많은 모우드를 포함시키면 어 떤 결과를 낳게 될 것인가\ulcorner"라는 질문에서 생겨난 것이다. 갤러킨 법을 이용 하여 비선형 편미분 방정식과 경계 조건으로 표현되는 이 문제를 연립 비선 형 상미분 방정식으로 변환한다. 다중시간법(the method of multiple scales) 을 이용하여 이 상미분 방정식을 정상상태에서의 세 모우드의 진폭과 위상 에 대한 연립비선형 대수방정식으로 변환한다. 이 대수방정식을 수치적으로 풀어서 정상상태 응답을 구하고 Nayfeh등의 결과와 비교한다. 결과와 비교한다. studies, the origin of ${\alpha}$$_1$peak was attributed to the detrapping process form trap with 2.88[eV] deep of injected space charge from the chathode in the crystaline regions. The origin of ${\alpha}$$_2$ peak was regarded as the detrapping process of ions trapped with 0.9[eV] deep originated from impurity-ion remained in the specimen during production process of the material, in the crystalline regions. The origin of ${\beta}$ peak was concluded to be due to the depolarization process of "C=0"dipole with the activation energy of 0.75[eV] in the amorphous regions. The origin of ${\gamma}$ peak was responsible to the process combined with the depolarization of "CH$_3$", chain segment, with the activation energy of carriers from the shallow trap with 0.4[eV], in he amorp

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.176-177
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• 2013

Surface plasmon polaritons (SPPs) have attracted the attention of scientists and engineers involved in a wide area of research, microscopy, diagnostics and sensing. SPPs are waves that propagate along the surface of a conductor, usually metals. These are essentially light waves that are trapped on the surface because of their interaction with the free electrons of conductor. In this interaction, the free electrons respond collectively by oscillating in resonance with the light wave. The resonant interaction between the surface charge oscillation and the electromagnetic field of the light constitutes the SPPs and gives rise to its unique properties. In this papers, we studied theoretical and experimental extraordinary transmittance (T) and reflectance (R) of 2 dimensional metal hole array (2D-MHA) on GaAs in consideration of the diffraction orders. The 2d-MHAs was fabricated using ultra-violet photolithography, electron-beam evaporation and standard lift-off process with pitches ranging from 1.8 to $3.2{\mu}m$ and diameter of half of pitch, and was deposited 5-nm thick layer of titanium (Ti) as an adhesion layer and 50-nm thick layer of gold (Au) on the semiinsulating GaAs substrate. We employed both the commercial software (CST Microwave Studio: Computer Simulation Technology GmbH, Darmstadt, Germany) based on a finite integration technique (FIT) and a rigorous coupled wave analysis (RCWA) to calculate transmittance and reflectance. The transmittance was measured at a normal incident, and the reflectance was measured at variable incident angle of range between $30^{\circ}{\sim}80^{\circ}$ with a Nicolet Fourier transmission infrared (FTIR) spectrometer with a KBr beam splitter and a MCT detector. For MHAs of pitch (P), the peaks ${\lambda}$ max in the normal incidence transmittance spectra can be indentified approximately from SP dispersion relation, that is frequency-dependent SP wave vector (ksp). Shown in Fig. 1 is the transmission of P=2.2 um sample at normal incidence. We attribute the observation to be a result of FTIR system may be able to collect the transmitted light with higher diffraction order than 0th order. This is confirmed by calculations: for the MHAs, diffraction efficiency in (0, 0) diffracted orders is lower than in the (${\pm}x$, ${\pm}y$) diffracted orders. To further investigate the result, we calculated the angular dependent transmission of P=2.2 um sample (Fig. 2). The incident angle varies from 30o to 70o with a 10o increment. We also found the splitting character on reflectance measurement. The splitting effect is considered a results of SPPs assisted diffraction process by oblique incidence.