• The Korean Journal of Ceramics
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• 제6권3호
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• pp.262-266
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• 2000

We investigated the effect of the grain size on the photovoltaic current in (Pb$_{1-x}$La$_x$)TiO$_3$ceramics, and the photoinduced domain switching in (Pb$_{0.85}$La$_{0.15}$)TiO$_3$and BaTiO$_3$ceramics. These behaviors in ferroelectric ceramics were attributed to the grain boundary at which photoexcited electrons were trapped. As the charged grain boundary acted as an electro-potential barrier which impeded the movement of electrons, the photovoltaic current showed a peak at a critical grain size. The space charge field built by the electrons trapped at the grain bound-aries was accounted for the photoinduced domain switching, and AE experimental results support well this account.

• ETRI Journal
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• 제27권3호
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• pp.319-325
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• 2005

In this paper the effect of temperature on the electrical properties of organic semiconductor disperse orange dye 25 (OD) have been examined. Thin films of OD have been deposited on $In_{2}O_{3}$ substrates using a centrifugal machine. DC current-voltage (I-V) characteristics of the fabricated devices $(Al/OD/In_{2}O_{3)$ have been evaluated at varying temperatures ranging from 40 to $60^{\circ}C$. A rectification behavior in these devices has been observed such that the rectifying ratio increases as a function of temperature. I-V characteristics observed in $Al/OD/In_{2}O_{3)$ devices have been classified as low temperature $({\leq} 50^{\circ}C)$ and high temperature characteristics (approximately $60^{\circ}C$). Low temperature characteristics have been explained on the basis of the charge transport mechanism associated with free carriers available in OD, whereas high temperature characteristics have been explained on the basis of the trapped space-charge-limited current. Different electrical parameters such as traps factor, free carrier density, trapped carrier density, trap density of states, and effective mobility have been determined from the observed temperature dependent I-V characteristics. It has been shown that the traps factor, effective mobility, and free carrier density increase with increasing values of temperature, whilst no significant change has been observed in the trap density of states.

• 전기의세계
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• 제28권10호
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• pp.48-54
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• 1979

The electrification phenomena of polymerized materials is governed by the competitive processes of the charge generation and the charge dissipation. In this paper, The charged particles were supplied on the naked upper surface of the polyethylene film from a point corona discharge with a screen electrode which controls the potential difference across the film. The charging current with the corona charging was found to be larger than that obtained with the electric charging on the MIM structure and the discharge current was found to flow in the same direction as that of the charging current. these results can suggest that the charge injection occurs from the interface between the polethylene surface and the accumulated charge layer, the injected charge are trapped and the space charge is established.

• 한국자기공명학회논문지
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• 제4권1호
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• pp.50-63
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• 2000

Titanium dioxide particles with three different average sizes, prepared by three different methods, were incorporated into silica gel pores by impregnation. The titanium dioxide incorporated into the silica gel pores was photoionized by 240-400 nm irradiation at 77 K by a one-photon process to from trapped hole centers on OH group and trapped electron centers on titanium which were detected by electron paramagnetic resonance at 77 K. During the impregnation the smallest size range of TiO2 particles can be incorporated into silica gels with 2.5-1.5 nm pores. However, the largest size range of TiO2 particles can only be incorporated into silica gels with 6-15 nm pores and not into silica gels with 2.5-4 nm pores. The photoyield and stability of photoinduced hole and electron centers depends on the silica pore sizes of silica gels and surface area as well as on the TiO2 loading. In large pore silica gels and large particle size of TiO2, photoinduced charge separation reaches to a plateau at shorter irradiation times and the trapped hole and electron centers are more stable to decay.

• Journal of information and communication convergence engineering
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• 제4권2호
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• pp.84-87
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• 2006

Lateral distributions of locally injected electrons and holes in an oxide-nitride-oxide (ONO) dielectric stack of two different silicon-oxide-nitride-oxide-silicon (SONOS) memory cells are evaluated by single-junction charge pumping technique. Spatial distribution of electrons injected by channel hot electron (CHE) for programming is limited to length of the ONO region in a locally ONO stacked cell, while is spread widely along with channel in a fully ONO stacked cell. Hot-holes generated by band-to-band tunneling for erasing are trapped into the oxide as well as the ONO stack in the locally ONO stacked cell.

• Transactions on Electrical and Electronic Materials
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• 제9권4호
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• pp.151-155
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• 2008

Using pentacene field effect transistors (FETs) with Au source and drain electrodes, electron injection from the Au electrodes into the pentacene was investigated. The capacitance-voltage (C-V) and optical second harmonic generation (SHG) measurements were employed. Electron injection from the Au electrodes was suggested by the hysteresis behavior with the C-V characteristics and slowly decaying SHG signal under DC biasing, A mechanism of hole-injection assisted by trapped electrons is proposed. To confirm electron injection process, light-emitting behavior under the application of AC applied voltage was observed.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.70-71
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• 2007

Analyzing pentacene field effect transistors (FETs) with Au source and drain electrodes as Maxwell-Wagner effect elements, electron and hole injection from the Au electrodes into the FET channel were examined using current-voltage (I-V), capacitance-voltage (C-V) and optical second harmonic generation (SHG) measurements. Based on these results, a mechanism of the hole and electron injection into pentacene from the Au electrodes and subsequently recombination mechanism with light-emitting in the pentacene layer are discussed, with taking into account the presence of trapped charges.

• 전기전자학회논문지
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• 제18권4호
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• pp.620-624
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• 2014

본 연구에서는, Ni/CNT/$SiO_2$ 구조의 4H-SiC MIS 캐패시터를 제작하고 전기적 특성을 조사하였다. 이를 통하여 4H-SiC MIS 소자에서 탄소나노튜브의 역할을 분석하고자 하였다. 탄소나노튜브는 이소프로필알코올과 혼합하여 $SiO_2$ 표면에 분산하였다. 소자의 전기적 특성 분석을 위하여 300-500K의 온도 범위에서 소자의 정전용량-전압 특성을 측정하였다. 밴드 평탄화 전압은 양의 방향으로 shift되었다. 정전용량-전압 그래프로부터 계면 포획 전하 밀도 및 산화막 포획 전하 밀도가 유도되었다. 산화막의 상태는 4H-SiC MIS 구조의 계면에서 전하 반송자 또는 결함 상태와 관련된다. 온도가 증가함에 따라 밴드 평탄화 전압은 음의 방향으로 shift되는 결과를 얻었다. 실험 결과로부터, Ni과 $SiO_2$ 계면에 탄소나노튜브를 첨가함에 따라 4H-SiC MIS 캐패시터의 게이트 특성을 조절 가능할 것으로 판단된다.

• Journal of Electrical Engineering and Technology
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• 제10권3호
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• pp.1124-1130
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• 2015

Moisture and high temperature are the most important factors that lead to the ageing of oil-paper insulation, but the research about space charge characteristics of oil-paper insulation does not take the combined effect of ambient temperature, moisture and thermal ageing into account. The pulsed electroacoustic (PEA) method was used to investigate the influence of moisture and temperature on space charge characteristics of oil paper at different ageing stages. The results showed that moisture could speed up formation of space charge in oil paper when water concentration was low, but the formation was restrained if the water concentration was high. At the beginning of thermal ageing, heterogeneous charge accumulation had predominance, but it gradually changed to homogeneous charge injection with ageing. It was believed that moisture concentration could speed up ageing and enhance charge accumulation on one hand, and accelerate or slow down the establishment speed of space charge on the other hand, therefore, charge accumulation type changed with ageing. The more seriously the oil-paper insulation was thermally aged, the deeper the trap energy level was, hence more space charge was trapped, which could be speeded up by increasing the ageing temperature, but the effect of ambient temperature did not fit the Arrhenius law.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 1998년도 추계종합학술대회 논문집
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• pp.593-596
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• 1998

Effects of current re-stress after anneal on leakage current and trapped charges in oxides are investigated. Current stress on 6 nm thick oxide has generated mostly positive traps within the oxide resulting in leakage currents. The interface states generated are several orders of magnitude smaller, determined by C-V and charge pumping method. Annealing has eliminated only the charged traps not the neutral traps, thus the leakage current and trap density are increased when the oxides are re-stressed.