• 센서학회지
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• 제16권3호
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• pp.229-233
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• 2007

The indium tin oxide (ITO) films were deposited on CR39 substrate using DC magnetron sputtering. The ITO thin films deposited at room temperature because CR39 substrate its glass-transition temperature is $130^{\circ}C$. The ITO thin films used bottom and top electrode and for organic thin film transparent transistors (OTFTs). The ITO thin film electrodes electrical properties and optical transparency properties in the visible wavelength range (300-800 nm) strongly dependent on volume of oxygen percent. For the optimum resistivity and transparency of the ITO thin film electrode achieved with a 75 W plasma power, 10 % volume of oxygen and a 27 nm/min deposition rate. Above 85 % transparency in the visible wavelength range (300-800 nm) measured without post annealing process and a low resistivity value $9.83{\times}10^{-4}{\Omega}cm$ was measured thickness of 300 nm. All fabrication process of ITO thin films did not exceed $80^{\circ}C$.

• 한국재료학회지
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• 제21권3호
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• pp.144-148
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• 2011

We have investigated the structural and optical properties of Ga-doped ZnO (GZO) thin films deposited by RF magnetron sputtering at various deposition temperatures from 100 to $500^{\circ}C$. All the GZO thin films are grown as a hexagonal wurtzite phase with highly c-axis preferred parameter. The structural and electrical properties are strongly related to deposition temperature. The grain size increases with the increasing deposition temperature up to $400^{\circ}C$ and then decreases at $500^{\circ}C$. The dependence of grain size on the deposition temperature results from the variation of thermal activation energy. The resistivity of GZO thin film decreases with the increasing deposition temperature up to $300^{\circ}C$ and then decreases up to $500^{\circ}C$. GZO thin film shows the lowest resistivity of $4.3{\times}10^{-4}\;{\Omega}cm$ and highest electron concentration of $1.0{\times}10^{21}\;cm^{-3}$ at $300^{\circ}C$. The mobility of GZO thin films increases with the increasing deposition temperature up to $400^{\circ}C$ and then decreases at $500^{\circ}C$. GZO thin film shows the highest resistivity of 14.1 $cm^2/Vs$. The transmittance of GZO thin films in the visible range is above 87% at all the deposition temperatures. GZO is a feasible transparent electrode for the application to the transparent electrode of thin film solar cells.

• Journal of Information Display
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• 제9권3호
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• pp.8-11
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• 2008

A novel non-alkoxide sol-gel process for synthesizing Ga-doped ZnO thin film on glass was derived for possible use as a transparent electrode in flat-panel displays, using zinc acetate dehydrate as the starting material. The structural and electrical properties of thin films have been characterized as functions of Ga addition and post-heat-treatments. Their carrier density, Hall mobility, and optical transmittance were measured and discussed herein to explain the characteristics of the sol-gel-derived Ga-doped ZnO thin film on glass.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제52권9호
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• pp.378-382
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• 2003

Transparent conductive oxides (TCO) are necessary as front electrode for most thin film solar cell. In our paper, transparent conducting aluminum-doped Zinc oxide films (ZnO:Al) were prepared by rf magnetron sputtering on glass (Corning 1737) substrate as a variation of the deposition condition. After deposition, the smooth ZnO:Al films were etched in diluted HCI (0.5%) to examine the electrical and surface morphology properties as a variation of the time. The most important deposition condition of surface-textured ZnO films by chemical etching is the processing pressure md the substrate temperature. In low pressures (0.9mTorr) and high substrate temperatures ($\leq$$300^{\circ}C$), the surface morphology of films exhibits a more dense and compact film structure with effective light-trapping to apply the silicon thin film solar cells.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.391-394
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• 2002

Transparent conductive oxides (TCO) are necessary as front electrode for most thin film solar cell. In our paper, transparent conducting aluminum-doped Zinc oxide films (ZnO:Al) were prepared by rf magnetron sputtering on glass (Corning 1737) substrate as a variation of the deposition condition. After deposition, the smooth ZnO:Al films were etched in diluted HCl (0.5%) to examine the electrical and surface morphology Properties as a variation of the time. The most important deposition condition of surface-textured ZnO films by chemical etching is the processing pressure and the substrate temperature. In low pressures (0.9 mTorr) and high substrate temperatures ($\leq$30$0^{\circ}C$), the surface morphology of films exhibits a more dense and compact film structure with effective light-trapping to apply the silicon thin film solar cells.

• Journal of Electrical Engineering and Technology
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• 제9권2호
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• pp.609-614
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• 2014

We fabricated amorphous zinc tin oxide (ZTO) transparent thin-film transistors (TTFTs). The effects of Al electrode on the mobility and threshold voltage of the ZTO TTFTs were investigated. It was found that the aluminum (Al)-ZTO contact decreased the mobility and increased the threshold voltage. Traps, originating from $AlO_x$, were assumed to be the cause of degradation. An indium tin oxide film was inserted between Al and ZTO as a buffer layer, forming an ohmic contact, which was revealed to improve the performance of ZTO TTFTs.

• 한국전기전자재료학회논문지
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• 제21권10호
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• pp.923-929
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• 2008

On the piezoelectric polymer, PVDF (poly vinylidene fluoride), the transparent conducting oxide (TCO) electrode material thin film was deposited by roll to roll sputtering process mentioned as a mass product-friendly process for display application. The deposition method for ITO Indium Tin Oxides) as our TCO was DC magnetron sputtering optimized for polymer substrate with the low process temperature. As a result, a high transparent and good conductive ITO/PVDF film was prepared. During the process, especially, the gas mixture ratio of Ar and Oxygen was concluded as an important factor for determining the film's physical properties. There were the optimum ranges for process conditions of mixture gas ratio for ITO/PVDF From these results, the doping mechanism between the oxygen atom and the metal element, Indium or Tin was highly influenced by oxygen partial pressure condition during the deposition process at ambient temperature, which gives the conductivity to oxide electrode, as generally accepted. With our studies, the process windows of TCO for display and other application can be expected.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.244-244
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• 2009

Carbon nanotubes (CNTs) have excellent electrical, chemical stability, mechanical and thermal properties. In this paper, networks of Multi-walled carbon nanotube (MWCNT) materials were investigated as transparent electrode. Sensor films were fabricated by air spray method using the multi-walled CNTs solution on glass substrates. The film that was sprayed with the MWCNT dispersion for 60 sec, was 300nm thick. And the electric resistivity and the light transmittance rate are $2{\times}10^2{\Omega}cm$ and 60%, respectively.

• 한국정밀공학회지
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• 제27권9호
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• pp.11-15
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• 2010

In this study, to fabricate a low-resistance and high optical transparency electrode film, the following steps were performed: the design and manufacture of electroforming stamp, the fabrication of a thermal roll-imprinted polycarbonate (PC) patterned films, the filled low-resistance Ag paste using doctor blade process on patterned PC films and spin coating by conductive polymers. As a result of PC films imprinted line width of $26.69{\pm}2\;{\mu}m$, channel length of $247.57{\pm}2\;{\mu}m$, and pattern depth of $7.54{\pm}0.2\;{\mu}m$. Ag paste to fill part of the patterned film with conductive polymer coating and then the following parameters were obtained: a sheet resistance of $11.1\;{\Omega}/sq$ optical transparency values at a wavelength of 550 nm was 80.31 %.

• 전기화학회지
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• 제13권3호
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• pp.175-180
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• 2010

전도성 폴리아닐린을 합성하여 용액 공정을 적용한 유기박막 투명전극을 제조, 그 특성을 조사하였다. 용액에 분산된 폴리아닐린을 스핀코팅하여 얻어진 박막 전극은 200 nm의 두께에서 $380{\Omega}/m^2$ 의 면저항을 보였고, 450 nm 이상의 파장에서 85% 이상의 균일한 광투과성을 나타내었다. 전극의 $130^{\circ}C$이상의 온도변화에서는 비교적 높은 저항변화율이 관찰되었다.