• Korean Journal of Optics and Photonics
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• v.22 no.2
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• pp.90-95
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• 2011

We propose a super-thin and light-weight liquid crystal cell, in which glass substrates are eliminated and polarizers are used as substrates. We fabricate a polarizer substrate by depositing a-SiOX as a buffer layer, indium-tin-oxide as a transparent conducting layer, and a-SiOX as an alignment layer on a polarizer sequentially at a low temperature. We use the ion-beam method to align liquid crystals on polarizer substrates.

• Journal of the Korean institute of surface engineering
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• v.30 no.6
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• pp.406-411
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• 1997

Transparent conductive thin films have found many applications in active and passive electronic and opto-electronic devices such as flat panel display electrode, solar cell electrode and window heat mirror, etc. Low resistivity and high transmittance of these films can beotained by controlling deposition parameters which are oxygen partial pressure, substrate temperature and dopant concentration. In this study, non-stoichiometric and Sb-doped thin electrical properties of undoped films have been degraded with increase of substrate temperature and optical properties have been improved in Sb-doped films. The resistivity of $2.5\times10^{-3}\Omega\textrm{cm}$,/TEX>, average transmittance of 80% and sheet resistance of 130$\Omega$/$\square$ at thickess of 2000 $\AA$ could be obrained at optmal condimal conditions which were at $400^{\circ}C$ of substrate temperature, 58% of oxygen partial pressure and 5% of Sb doping concentration.

• Journal of the Korean institute of surface engineering
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• v.37 no.3
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• pp.146-151
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• 2004

Indium tin oxide (ITO) is widely used to make a transparent conducting film for various display devices and opto-electric devices. In this study, ITO films on glass substrate were fabricated by inductively coupled plasma (ICP) assisted dc magnetron sputtering. A two-turn rf coil was inserted in the process chamber between the substrate and magnetron for the generation of ICP. The substrates were not heated intentionally. Subsequent post-annealing treatment for as-deposited ITO films was not performed. Low-temperature deposition technique is required for ITO films to be used with heat sensitive plastic substrates, such as the polycarbonate and acrylic substrates used in LCD devices. The surface roughness of the ITO films is also an important feature in the application of OLEDs along with the use of a low temperature deposition technique. In order to obtain optimum ITO thin film properties at low temperature, the depositions were carried out at different condition in changing of Ar and $O_2$ gas mixtures, ICP power. The electrical, optical and structural properties of the deposited films were characterized by four-point probe, UV/VIS spectrophotometer, atomic force microscopy(AFM) and x-ray diffraction (XRD). The electrical resistivity of the films was -l0$^{-4}$ $\Omega$cm and the optical transmittance in the visible range was ＞85%. The surface roughness ( $R_{rms}$) was -20$\AA$.>.

• Bulletin of the Korean Chemical Society
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• v.32 no.3
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• pp.847-851
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• 2011

This study examined In-Zn-Sn-O (IZTO) films deposited on glass substrates by pulsed DC magnetron sputtering with various substrate temperatures. The structural, electrical, optical properties were analyzed. Xray diffraction showed that the IZTO films prepared at temperatures > $150^{\circ}C$ were crystalline which adversely affected the electrical properties. Amorphous IZTO films prepared at $100^{\circ}C$ showed the best properties, such as a low resistivity, high transmittance, figure of merit, and high work function of $4.07{\times}10^{-4}\;{\Omega}$, 85%, $10.57{\times}10^{-3}\;{\Omega}^{-1}$, and 5.37 eV, respectively. This suggests that amorphous IZTO films deposited at relatively low substrate temperatures ($100^{\circ}C$) are suitable for electrode applications, such as OLEDs as a substitute for conventional crystallized ITO films.

• Journal of the Korean Ceramic Society
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• v.52 no.3
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• pp.224-227
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• 2015

In this work, the properties of Indium-Zinc-Tin-Oxide (IZTO) thin films, deposited on polyethylene naphthalate (PEN) with a $SiO_2$ buffer layer, were analyzed with different working pressures. After depositing the $SiO_2$ buffer layer on PEN substrates by plasma-enhanced chemical vapor deposition (PECVD), the IZTO thin films were deposited by RF magnetron sputtering with 1 to 7-mTorr working pressure. All the IZTO thin films show an amorphous structure, regardless of the working pressure. The best morphological, electrical, and optical properties are obtained at 3-mTorr working pressure, with a surface roughness of 2.112-nm, a sheet resistance of $8.87-{\Omega}/sq$, and a transmittance at 550-nm of 88.44%. These results indicate that IZTO thin films deposited on PEN have outstanding electrical and optical properties, and the PEN plastic substrate is a suitable material for display devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.468-468
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• 2008

IZO(Indium zinc oxide) 박막은 화학적으로 안정하면서, 가시광 영역 (380~780 nm)에서 80% 이상의 높은 투과도와 낮은 전기비저항, 3.5 eV 이상의 넓은 밴드갭 특성을 가진다. IZO 박막의 이러한 특성 때문에 평판표시소자 (Flat Panel Display; FPD) 및 태양전지와 같은 광전소자들의 차세대 투명전도성 산화물(Transparent Conducting Oxide; TCO) 박막 재료로 주목 받고 있다. 특히 평판표시소자(FPD)들의 고해상도, 대면적화 및 경량화로 인해 투명전극용 박막의 고품위 특성이 요구되고 있다. 현재 투명 전극으로 널리 사용되고 있는 고가의 ITO(indium tin oxide)를 대체할 다성분계 산화물 투명 전극 중에서 투광성과 전기전도도가 좋은 IZO 박막에 대한 많은 연구가 진행되고 있다. 이러한 IZO 박막의 광학적, 전기적 특성은 박막 내의 조성 차이와 미세구조에 의해 결정된다. 따라서 고품위의 IZO 박막 형성을 위해서 결정구조와 미세구조에 대한 분석이 필수적이다. 본 연구에서는 Si(100) 기판 위에 DC-sputtering으로 증착한 IZO 박막의 열처리 온도에 따른 구조적 특성을 알아보기 위해 300~$600^{\circ}C$ 공기분위기에서 1시간 동안 열처리 하였다. 표면 형상(surface morphology)은 원자현미경(AFM). 결정구조는 X-선 회절(XRD)로 분석하였고, 미세구조는 투과전자현미경(TEM)으로 관찰하였다.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.389-392
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• 2009

Metal oxides have been proposed as an alternative channel material to hydrogenated amorphous silicon in thin film transistors (TFTs) because their higher mobility and stability make them suitable for transistor active layers. Thin films of indium zinc oxide (IZO) were deposited using a High Target Utilization Sputtering (HiTUS) system on various dielectrics, some of which were also deposited with the HiTUS. Investigations into bottom-gated IZO TFTs have found mobilities of 8 $cm^2V\;^1s^{-1}$ and switching ratios of $10^6$. There is a variation in the threshold voltage dependent on both oxygen concentration, and dielectric choice. Silica, alumina and silicon nitride produced stable TFTs, whilst hafnia was found to break down as a result of the IZO.

• Korean Journal of Optics and Photonics
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• v.24 no.5
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• pp.256-261
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• 2013

Power conversion efficiency of the red and green phosphors was measured and analyzed. Two different samples of phosphors of thickness 50 ${\mu}m$ were prepared: one was the phosphor layer coated on the transparent substrate and the other was prepared on the reflective substrate. The 445 nm blue laser diode beam was used as the exciting beam. The conversion efficiencies of the red and green phosphor layers were 41.4% and 46%, respectively. The quantum efficiencies of the red and green phosphors were 60.4% and 53.5%, respectively.

• Korean Institute of Interior Design Journal
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• v.24 no.5
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• pp.31-41
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• 2015

The objective of this research is to investigate the artistic meaning of "infinity," manifested by the fourth dimensional value in the genres of photography and architecture, by analyzing how Sugimoto Hiroshi's photographic spatio-temporal infinity transfers to his architectural approaches. The research is initiated by scrutinizing the themes, characteristics, techniques, and artistic meaning of Sugimoto's famous photographic series, including "Seascapes," "Theatres," and "Architecture"; the concept of infinity can be defined as infinite divergence and infinitesimal convergence between antithetical concepts in time, space, and being. Sugimoto's photographic works display "temporal infinity" by connecting ancient times, the present, and the future; "spatial infinity" by offering the potential for transformation from flat photographs into infinite three-dimensional space and fourth-dimensional concepts through time; and "existential infinity" of life and death by making us think about being and essence, being and time, and origin and religion. These perspectives are also used to analyze Sugimoto's architectural works, such as "Appropriate Proportion" and "Glass Tea House Mondrian." As a result, the research finds that in Sugimoto's architectural approaches, spatio-temporal infinity between antithetical values is manifested through the concept of origin, geometric form, extended axis, immaterial threshold, transparent materiality, and connectivity of light and shadow, provoking our existence to transcend into infinity itself.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.655-656
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• 2005

In the future, plastic based system will play a crucial role in modem life, for examples, transparent display or disposable electronics and so on. In this paper, we introduced a new method to fabricate the metal line on the plastic substrate. Metal lines were fabricated by hot embossing and CMP process on PMMA (polymethylmethacrylate) substrates. A Si mold was made by wet etching process and a PMMA wafer was cut off from I mm thick PMMA sheet. A 100 nm thick Al was deposited on PMMA wafers. The Al deposited PMMA wafer and the Si mold carefully sandwiched which was directly imprinted by hot embossing. After imprinting process, a residual Al layer was removed by CMP process. Finally, we found the entire process may be very useful to fabricate the metal line on plastic substrates.