• Journal of the Korean Ceramic Society
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• v.31 no.4
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• pp.436-447
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• 1994

ZnO transparent conducting thin film, which is a strong candidate for a transparent electrical contact in optoelectronic devices, was prepared by the vapour spraying method on the slide glass in nitrogen ambient at the atmospheric pressure. The structural, optical and electrical properties of films show a strong dependence on substrate temperature, and the optimum range of deposition temperature existed to obtain TCO(Transparent Conducting Oxide) films. At the higher temperatures, milky films were obtained. In such optimum range, the bandgap in ZnO films was determined from the spectral dependence of absorption coefficient and electrical characteristics were characterized with by the Hall mobility and carrier concentration.

• Ceramist
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• v.10 no.3
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• pp.28-33
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• 2007

The structural and optical properties of Ni-doped transparent glass-ceramics are reviewed. The quantum efficiencies of ceramics were examined to explore suitable crystalline phase for Ni-doping in glass-ceramics. Inverse spinel $LiGa_5O_8$ have the quantum efficiency of almost 100 % at room temperature. Transparent glass ceramics containing $LiGa_5O_8$ was successfully synthesized by heat treatment of $Li_2O-Ga_2-O_3-SiO_2-NiO$ glass. Most of $Ni^{2+}$ ions in glass-ceramic were incorporated into $LiGa_5O_8$ nanocrystals. The near-infrared emission covering from the O-band to L-band (1260-1625 nm) was observed from the Ni-doped $Li_2O-Ga_2O_3-SiO_2$ glass-ceramic though it was not observed from the as-cast glass. The lifetime of the emission was about $580\;{\mu}sec$ even at 300K. The emission quantum efficiency was evaluated as about 10 % that is enough high for practical usage as gain media of optical fiber amplifiers. The figure of merit (the product of the stimulated emission cross section and lifetime) was as high as that of rare-earth-doped glasses. The broad bandwidth, high quantum efficiency and high figure of merit show that transparent glass-ceramics containing $Ni^{2+}:LiGa_5O_8$ nanocrystals are promising candidates as novel ultra-broadband gain media.

• Journal of Ceramic Processing Research
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• v.19 no.5
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• pp.383-387
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• 2018

Highly transparent $Y_2O_3$ ceramics were produced using spark plasma sintering (SPS) at $1600^{\circ}C$ and 30 MPa for 5 min. When the SPS process was applied with various amounts of $La_2O_3$ as dopant. The specimen doped with 3 mol% $La_2O_3$ showed the highest density, and rapid particle growth and pore growth occurred, exhibiting that the relative density and average grain size are 99.2% and $17.2{\mu}m$, respectively. The specimen showed excellent transmittance of 79.44% in the visible light region (600 nm), resulting that $La_2O_3$ would be a useful dopant for improving the transmittance and mechanical properties of transparent $Y_2O_3$ ceramics produced with SPS.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.555-557
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• 2004

We report the effect of the particle size (D50) and PSD (Particle Size Distribution) of glass frit on the transparency of transparent dielectric layer of PDP. The milling efficiency of wet milling with water was the best among the dry milling, wet milling with IPA and wet milling with water. The transparency increased with the reduction of particle size of glass frit as the milling time increased. Also the transparency changed by the PSD of glass frit. Glass frits of broad PSD showed high transparency compared with the glass frits of sharp PSD.

• Korean Journal of Materials Research
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• v.20 no.12
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• pp.676-680
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• 2010

Most TCOs such as ITO, AZO(Al-doped ZnO), FTO(F-doped $SnO_2$) etc., which have been widely used in LCD, touch panel, solar cell, and organic LEDs etc. as transparent electrode material reveal n-type conductivity. But in order to realize transparent circuit, transparent p-n junction, and introduction of transparent p-type materials are prerequisite. Additional prerequisite condition is optical transparency in visible spectral region. Oxide based materials usually have a wide optical bandgap more than ~3.0 eV. In this study, single-phase transparent semiconductor of $SrCu_2O_2$, which shows p-type conductivity, have been synthesized by 2-step solid state reaction at $950^{\circ}C$ under $N_2$ atmosphere, and single-phase $SrCu_2O_2$ thin films of p-type TCOs have been deposited by RF magnetron sputtering on alkali-free glass substrate from single-phase target at $500^{\circ}C$, 1% $H_2$/(Ar + $H_2$) atmosphere. 3% $H_2$/(Ar + $H_2$) resulted in formation of second phases. Hall measurements confirmed the p-type nature of the fabricated $SrCu_2O_2$ thin films. The electrical conductivity, mobility of carrier and carrier density $5.27{\times}10^{-2}S/cm$, $2.2cm^2$/Vs, $1.53{\times}10^{17}/cm^3$ a room temperature, respectively. Transmittance and optical band-gap of the $SrCu_2O_2$ thin films revealed 62% at 550 nm and 3.28 eV. The electrical and optical properties of the obtained $SrCu_2O_2$ thin films deposited by RF magnetron sputtering were compared with those deposited by PLD and e-beam.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.47-47
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• 2008

P-type transparent semiconductor $SrCu_2O_2$ thin films have been prepared by RF sputtering using low-alkali glass for LCD and quartz as substrates. Single phase of $SrCu_2O_2$ powder was obtained by heating a stoichiometric mixture of CuO and $SrCO_3$ at 1223K for 96h under N2 gas flow, and target was fabricated at 1243K for 24h. Room temperature conductivity of the sintered body was about 0.02S/cm, and the activation energy in the temperature range of $-50^{\circ}C$~RT and RT~$150^{\circ}C$ were 0.18eV, 0.07eV, respectively. Effects of deposition pressure and post-annealing temperature on the electrical and optical properties of the obtained thin film have been investigated.

• Journal of the Korean Ceramic Society
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• v.44 no.10
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• pp.548-553
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• 2007

Ceramic green sheets consisting Bi-based glass frit were fabricated for an application to PDP transparent dielectric front panel. The dispersion condition of the slurry for tape casting was pre-examined, and two kinds of hinder and plasticizer were used in the non-aqueous slurry system. In the fabrication process for the frit film, the properties such as dry and firing shrinkage, elongation, and transmittance were examined at the condition of various mixing ratio of plasticizers. In the mixing ratio of polyethylene glycol to dibutyl phthalate of 3:5wt%, a good adhesion, elongation and transmittance were observed at the firing temperature of $580^{\circ}C$. The photograph for the cross section of the interface was also showed a dense microstructure.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.48-48
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• 2007

P-type transparent conducting $CuGaO_2$ thin films have been prepared by DC/RF sputtering using Quartz(0001) and sapphire(0001) substrates. The target was fabricated by heating a stoichiometric mixture of CuO and $Ga_2O_3$ at 1373K for 12h under $N_2$ atmosphere. The film were deposited under mixture gas of Ar and $O_2(Ar:O_2=4:1)$ during 10~30min. and the as-deposited films were annealed at 1123K and $N_2$ atmosphere. Room temperature conductivity and the activation energy of the sintered body in the temperature range of 223K ~ 423K were 0 004S/cm, 1.9eV, respectively. XRD revealed that all of the as-deposited films were amorphous. Heating of the films deposited on Quartz substrates above 1123K resulted in crystallization with a second phase of $CuSiO_3$, which was assumed owing to reaction with Quartz substrate. The single phase of $CuGaO_2$ was obtained at the film deposited on the sapphire substrates. The transmittance after annealing of DC- and RF-sputtered films were 55~75% at 550nm. From the transmittance and reflectance measurement. the direct band gap of the DC/RF-sputtered films were 3.63eV and 3.57eV. and there was little difference between DC and RF sputtered films.

• Journal of the Korean Ceramic Society
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• v.29 no.3
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• pp.223-231
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• 1992

CaO and ZnO were added to Al2O3-SiO2 binary system respectively as flux, then ZrO2 and TiO2 were applied as nucleating agent to these CaO-Al2O3-SiO2 and ZnO-Al2O3-SiO2 ternary system glass. The transparency could not be kept in CaO-Al2O3-SiO2 system glass, whereas the transparent glass-ceramics were prepared in ZnO-Al2O3-SiO2 system glass containing ZrO2 as the nucleating agent. At this time the optimum heating temperatures for the nucleation and the crystal growth were 78$0^{\circ}C$ and 97$0^{\circ}C$. The sizes of the precipitated crystals in the transparent glass-ceramics were below 0.1 ${\mu}{\textrm}{m}$, and their light transmissibilities were more than 80%.

• Journal of the Korean Ceramic Society
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• v.27 no.2
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• pp.288-296
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• 1990

Parent glasses for the experiments were prepared to be ratio of Li2O : Al2O3 : SiO2=4.5 : 25 : 70.5 as basic components, and TiO2 and ZrO2 in the mixing ratio of 1 : 1 were added as the nucleating agents, whose contents were increased in each sample. DTA, XRD, SEM, IR were observed, and thermal expansion and transmissivities were measured for the crystallized samples under the controlled heat-treatments. The transformation temperatures and the dilatometric softening temperatures in thermal expansion curves, and also the exothermic peaks in differential thermo-analytical curves were shifted to lower temperature. The crystal phase deposited through the heat-treatment was identified as ${\beta}$-quartz solid solution with XRD and IR analysis. The crystalline phases in oopactified samples were ${\beta}$-spodumene coexiting with ${\beta}$-quartz solid solution. The samples having more than 3% nucleating agents were transparent. The crystallized grain sizes were ranged 0.05 to 0.1$\mu\textrm{m}$. The crystallized transparent samples were exceeded 85% in the transmissivity.