• Journal of the Korean Ceramic Society
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• v.40 no.11
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• pp.1113-1119
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• 2003

We used isopropanol which has low boiling point to prepare thin films at low temperature and changed mole concentration of zinc acetate from 0.3 to 1.3 mol/l. The structural, optical and electrical properties of ZnO thin films with Zn content were investigated. ZnO thin films highly oriented along the c-axis were obtained at Zn concentration of 0.7 mol/l. ZnO thin films with Zn concentration of 0.7 mol/l showed a homogeneous surface layer of nano structure. The transmittance of ZnO thin films by UV-vis. measurement was about 87% under the Zn concentration of 0.7 mol/l, but rapidly decreased over the 1.0 mol/l. The optical band gap energy was obtained from 3.07 to 3.22 eV which is very close to the band gap of bulk ZnO (3.2 eV). The electrical resistivity of ZnO thin films was about 150 $\Omega$-cm that shows little difference with Zn concentration. I-V curves of ZnO thin films exhibited typical ohmic contact properties.

• Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
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• v.7 no.2
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• pp.87-92
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• 2009

Remote detecting system for a radiation contamination using a plastic scintillator and an optical fiber was developed. Using a commercially available silica optical fiber and a plastic scintillator, we tested then for a real possibility as a remote monitoring detector. Also, a plastic scintillator was developed by itself, and evaluated as a radiation sensor. The plastic scintillator was made of epoxy resin, a hardener and an organic scintillation material. The mixture rate of the epoxy resin, hardener and organic scintillator was fixed by using their emission spectrum, transmittance, intensity etc. In this study, in order to decrease the light loss of an incomplete connection between an optical fiber and a scintillator, the optical fiber was inserted into the scintillator during the fabrication process. The senor used a plastic optical fiber and was estimated for its detection efficiency by an optic fiber's geometric factor.

• Tribology and Lubricants
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• v.31 no.6
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• pp.251-257
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• 2015

Heavy oil production is receiving significant attention because of increased demands for thermal power generation systems of the diesel engine and boilers. However, asphaltene, which is a heavy oil components (6-8 wt%), reduces the heat efficiency of the fuels owing to its agglomerated sludge of asphaltene during the burning process. Therefore, for hassle-free operation, we should develop asphaltene dispersants to suppress the formation of the sludge. We prepare variable salt-type polymeric dispersants using poly(isobutenyl succinic anhydride) and poly(amine) through both condensation esterification and acid-base neutralization reactions, which we subsequently evaluate for dispersing performance, using Turbiscan measurement. Total acid number (TAN) and total base number (TBN) of 75Lec-25SynDis.2 composed of lecithin and the prepared polymeric salt having the ratio of 3 : 1 are 18.9 and 33.7 mg KOH/g, respectively, which are comparable to those of the commercial dispersants (15.8 and 26.5 mg KOH/g). We determine the initial turbidity observed for 15 min of the polymeric dispersant was determined with transmittance (%), which can be calculated to separability number (SN). The SN value of 75Lec-25SynDis.2 is close to zero, which is superior to that of commercial dispersants and lecithin (0.015 and 0.017).

• Korean Journal of Materials Research
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• v.25 no.3
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• pp.125-131
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• 2015

Fluorine-doped $SnO_2$ (FTO) thin film/Ag nanowire (NW) double layers were fabricated by means of spin coating and ultrasonic spray pyrolysis. To investigate the optimum thickness of the FTO thin films when used as protection layer for Ag NWs, the deposition time of the ultrasonic spray pyrolysis process was varied at 0, 1, 3, 5, or 10 min. The structural, chemical, morphological, electrical, and optical properties of the double layers were examined using X-ray diffraction, X-ray photoelectron spectroscopy, field-emission scanning electron microscopy, transmission electron microscopy, the Hall effect measurement system, and UV-Vis spectrophotometry. Although pure Ag NWs formed isolated droplet-shaped Ag particles at an annealing temperature of $300^{\circ}C$, Ag NWs covered by FTO thin films maintained their high-aspect-ratio morphology. As the deposition time of the FTO thin films increased, the electrical and optical properties of the double layers degraded gradually. Therefore, the double layer fabricated with FTO thin films deposited for 1 min exhibited superb sheet resistance (${\sim}14.9{\Omega}/{\Box}$), high optical transmittance (~88.6 %), the best FOM (${\sim}19.9{\times}10^{-3}{\Omega}^{-1}$), and excellent thermal stability at an annealing temperature of $300^{\circ}C$ owing to the good morphology maintenance of the Ag NWs covered by FTO thin films.

• Korean Journal of Remote Sensing
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• v.35 no.1
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• pp.39-55
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• 2019

In this study, we have proposed an improved method to detect forest fires by correcting the reflected signals of day images using the middle-wavelength infrared (MWIR) channel. The proposed method is allowed to remove the reflected signals only using the image itself without an existing data source such as a land-cover map or atmospheric data. It includes the processing steps for calculating a solar-reflected signal such as 1) a simple correction model of the atmospheric transmittance for the MWIR channel and 2) calculating the image-based reflectance. We tested the performance of the method using the MODIS product. When compared to the conventional MODIS fire detection algorithm (MOD14 collection 6), the total number of detected fires was improved by approximately 17%. Most of all, the detection of fires improved by approximately 30% in the high reflection areas of the images. Moreover, the false alarm caused by artificial objects was clearly reduced and a confidence level analysis of the undetected fires showed that the proposed method had much better performance. The proposed method would be applicable to most satellite sensors with MWIR and thermal infrared channels. Especially for geostationary satellites such as GOES-R, HIMAWARI-8/9 and GeoKompsat-2A, the short acquisition time would greatly improve the performance of the proposed fire detection algorithm because reflected signals in the geostationary satellite images frequently vary according to solar zenith angle.

• Korean Journal of Optics and Photonics
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• v.33 no.6
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• pp.324-330
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• 2022

We measured the Dill and Mack model parameters that determine the exposure and development characteristics of photoresists, respectively. First, photoresist samples were prepared while altering the exposure dose, and changes in transmittance were measured. Analyzing these results, the Dill model parameters A, B, and C were determined. In particular, the exact solution of the Dill model equation was used to determine the C parameter. In addition, changes in thickness were measured as a function of development time for different exposure doses, and the Mack model parameters R_min, R_max, a, and n were determined using the results. We also determined parameter values for the reduced Mack model that uses only three parameters, R_min, R_max, and n. The root mean square error between the model predictions and the measured values for the photoresist thickness was found to increase slightly compared to the case using the original Mack model with four parameters.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.6
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• pp.576-581
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• 2023

The Ga₂O₃ thin films were deposited using an RF sputtering system and the effect of crystallographic and optical properties under rapid thermal annealing conditions on Ga₂O₃ thin film was evaluated. A rapid thermal annealing method can fabricate a crystalline Ga₂O₃ thin film which is applied to various fields with a low cost and a high efficiency compared with the conventional post-annealing method. In this study, the Ga₂O₃ treated at 900℃ for 1 min showed the beta and gamma phases in XRD measurement. In optical properties, the crystalline Ga₂O₃ represented a high transmittance of more than 80% in the visible region and was calculated with a high optical bandgap energy of 4.58 eV. The beta and gamma phases Ga₂O₃ can be obtained by adjusting the rapid thermal annealing temperatures, and the various properties such as the optical bandgap energy can be controlled. Moreover, it is expected that crystalline Ga₂O₃ can be applied to various devices by controlling not only temperature but process time.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.17 no.3
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• pp.155-165
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• 2024

A hybrid thin film was prepared by doping reduced graphene oxide (rGO) into a sol-gel solution mixed with aluminum, titanium, and strontium using a brush coating method. The annealing temperature was carried out at 160, 260, and 360℃, and the difference in oxidation reaction was observed. The sol-gel solution created during the membrane manufacturing process generates a contractile force due to the shear stress of the brush bristles, forming a microgroove structure. This structure was confirmed through scanning electron microscopy analysis, and the presence of rGO was clearly revealed. As the annealing temperature increases, the oxidation and reduction reactions on the thin film surface become more active, so the intensity of the surface mixture increases. Moreover, the electro-optical properties were stabilized and improved by increasing the intensity of the mixtures. Likewise, the voltage-capacitance values are also significantly improved. Lastly, the transmittance measurement showed that it was suitable for liquid crystal display application.

• Journal of the Korean Vacuum Society
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• v.21 no.6
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• pp.333-341
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• 2012

Indium Tin Oxide (ITO) thin films were prepared by RF magnetron sputtering with different flow rates of $O_2$ gas from 0 to 12 sccm. Electrical and optical properties of these films were characterized and analyzed. ITO deposited on soda lime glass and RF power was 2 kW, frequency was 13.56 MHz, and working pressure was $1.0{\times}10^{-3}$ Torr, Ar gas was fixed at 1,000 sccm. The transmittance was measured at 300~1,100 nm ranges by using Photovoltaic analysis system. Electrical properties were measured by Hall measurement system. ITO thin films surface were measured by Scanning electron microscope. Atomic force microscope surface roughness scan for ITO thin films. ITO thin films secondary electron emission coefficient(${\gamma}$) was measured by ${\gamma}$-Focused ion beam. The resistivity is about $2.4{\times}10^{-4}{\Omega}{\cdot}cm$ and the weighted average transmittance is about 84.93% at 3 sccm oxygen flow rate. Also, we investigated Work-function of ITO thin films by using Auger neutralization mechanism according to secondary electron emission coefficient(${\gamma}$) values. We confirmed secondary electron emission peak at 3 sccm oxygen flow rate.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.397-397
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• 2013

The electrical, electronic, optical properties and the local structure of Nickel Oxide (NiO) thin film have been investigated by X-ray photoelectron spectroscopy (XPS), Reflection Electron Energy Loss Spectroscopy (REELS), UV-spectrometer,Hall Effect measurement and X-ray absorption spectroscopy (XAS). The XPS results show that the Ni 2p spectra for all films consist of $Ni2p_{3/2}$ at around 854.5 eV which indicate the presence of Ni-O bond from NiO phase and for the annealed film at temperature above $200^{\circ}C$ shows the coexist Ni oxide and Ni metal phase. The REELS spectra showed that the band gaps of the NiO thin films were abruptly decreased with increasing temperature. The values of the band gaps are consistent with the optical band gaps estimated by UV-Spectrometer. The optical transmittance spectra shows that the transparency of NiO thin films in the visible light region was deteriorated with higher temperature due to existence of $Ni^0$. Hall Effect measurement suggest that the NiO thin films prepared at relatively low temperatures (RT and $100^{\circ}C$) are suitable for fabricating p-type semiconductor which showed that the best properties was achieved at $100^{\circ}C$, such as a low resistivity of $7.49{\Omega}.cm$. It can be concluded that the annealing process plays a crucial role in converting from p type to n type semiconductor which leads to reducing electrical resistivity of NiO thin films. Furthermore, the extended X-ray absorption fine structure (EXAFS) spectrum at the Ni K-edge was used to address the local structure of NiO thin films. It was found that the thermal treatments increase the order in the vicinity of Ni atom and lead the NiO thin films to bunsenite crystal structure. Moreover, EXAFS spectra show in increasing of coordination number for the first Ni-O shell and the bond distance of Ni-O with the increase of substrate temperature.