• Journal of the Korean institute of surface engineering
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• v.50 no.3
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• pp.141-146
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• 2017

We investigated configuration of metallic and insulating domains in $VO_2$ thin films, while spanning metal-insulator phase transition. Kelvin probe force microscopy, of which spatial resolution is less than 100 nm, enables us to measure local work function (WF) at the sample surface. The WF of $VO_2$ thin films decreased (increased) as increasing (decreasing) the sample temperature, during the phase transition. The higher and lower WF regions corresponded to the insulating and metallic domains, respectively. The metallic fraction, estimated from the WF maps, well explained the temperature-dependent resistivity based on the percolation model. The WF mapping also showed us how the structural defects affected the phase transition behaviors.

• Journal of Ceramic Processing Research
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• v.20 no.5
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• pp.484-489
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• 2019

VO2 is an attractive candidate as a transition metal oxide switching material as a selection device for reduction of sneak-path current. We demonstrate deposition of nanoscale VO2 thin films via thermal atomic layer deposition (ALD) with H2O reactant. Using this method, we demonstrate VO2 thin films with high-quality characteristics, including crystallinity, reproducibility using X-ray diffraction, and X-ray photoelectron spectroscopy measurement. We also present a method that can increase uniformity and thin film quality by splitting the pulse cycle into two using scanning electron microscope measurement. We demonstrate an ON / OFF ratio of about 40, which is caused by metal insulator transition (MIT) of VO2 thin film. ALD-deposited VO2 films with high film uniformity can be applied to next-generation nonvolatile memory devices with high density due to their metal-insulator transition characteristic with high current density, fast switching speed, and high ON / OFF ratio.

• Journal of the Korean Vacuum Society
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• v.7 no.s1
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• pp.1-6
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• 1998

The influence of the order-disorder structural transition on the magnetic and mageto-optical, and transport properties of Fe-Al and Co-Al alloy films has been investigated. The disordered states in the alloy films were prepared by vapor quenching deposition on glass substrates cooled by liquid nitrogen. The experimental study of the magento-optical properties of the ordered and disordered Fe-Al and Co-Al alloy films has been carried out in 1.05-5.0 eV energy range at room temperature. The transport properties have been measured in 2-300K temperature range with and without magnetic field of 0.5T. The influence of the order-disorder structural transition on the magnetic and magneto-optical properties was discussed by using the effective medium approximation and the structural defect approach. That on the temperature dependence of the resistivity was analyzed in a framework of the partial localization of the electronic states and the variable range hopping conductivity.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.6
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• pp.518-523
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• 2002

The influences of ion beam energy and reactive oxygen partial pressure on the physical and crystallographic characteristics of transition metal oxide compound(CrOx) film were studied in this paper. Chromium oxide films were deposited onto a cover-glass using ion Beam Sputter Deposition(IBSD) technique according to the various processing parameters. Crystallinity and grain size of as-deposited films were analyzed using XRD analysis. Thickness and Resistivity of the films were measured by $\alpha$-step and 4-point probe measurement. According to the XRD, XPS and resistivity results, the deposited films were the cermet type films which had crystal structure including amorphous oxide(a-oxide) phase and metal Cr phase simultaneously. The increment of the ion beam energy during the deposition process led to decreasing of metal Cr grain size and the rapid change of resistivity above the critical $O_2$ partial pressure.

• Proceedings of the Korean Magnestics Society Conference
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• 2015.11a
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• pp.41-41
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• 2015

• Proceedings of the Korean Vacuum Society Conference
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• 2007.08a
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• pp.148-148
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• 2007

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.143.2-143.2
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• 2013

Nanomechanical and electrical properties of vanadium dioxide (VO2) thin films across thermal-driven phase transition are investigated with ultra-high vacuum atomic force microscopy. VO2 thin films have been deposited on the n-type heavily doped silicon wafer by pulsed laser deposition. X-ray diffraction reveals that it is textured polycrystalline with preferential orientation of (100) and (120) planes in monoclinic phase. As the temperature increases, the friction decreased at the temperature below the transition temperature, and then the friction increased as increasing temperature above the transition temperature. We attribute this observation to the combined effect of the thermal lubricity and electronic contribution in friction. Furthermore, the dependence of nanoscale conductance on the local pressure was indicated at the various temperatures, and the result was discussed in the view of pressure-induced metal-insulator transition.

• Journal of Magnetics
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• v.13 no.2
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• pp.61-64
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• 2008

We studied the effect of the variation of the lattice constant on the electrical properties of $SrRuO_3$ thin films. In order to obtain films with different volumes, we varied the substrate temperature and oxygen pressure during the growth of the films on $SrTiO_3$ (001) substrates. The films were grown using a pulsed laser deposition method. The X-ray diffraction patterns of the grown films at low temperature and low oxygen pressure indicated the elongation of the c-axis lattice constant compared to that of the films grown at a higher temperature and higher oxygen pressure. The in-plane strain states are maintained for all of the films, implying the expansion of the unit-cell volume by the oxygen vacancies. The variation of the electrical resistance reflects the temperature dependence of the resistivity of the metal, with a ferromagnetic transition temperature inferred form the cusp of the curve being observed in the range from 110 K to 150 K. As the c-axis lattice constant decreases, the transition temperature linearly increases.

• Journal of Sensor Science and Technology
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• v.23 no.5
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• pp.314-319
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• 2014

Here, we review the various methods for the preparation of vanadium dioxide ($VO_2$) films and nanowires, and their potential applications to the sensors such as gas sensor, strain sensor, and temperature sensor. $VO_2$ is an interesting material on account of its easily accessible and sharp Mott metal-insulator transition (MIT) at ${\sim}68^{\circ}C$ in the bulk. The MIT is also triggered by the electric field, stress, magnetic field etc. This paper involves exceptionally sensitive hydrogen sensors based on the catalytic process between hydrogen molecules and Pd nanoparticles on the $VO_2$ surface, and fast responsive sensors based on the self-heating effects which leads to the phase changes of the $VO_2$. These features will be seen in this paper and can enable strategies for the integration of a $VO_2$ material in advanced and complex functional units such as logic gates, memory, FETs for micro/nano-systems as well as the sensors.

• Bulletin of the Korean Chemical Society
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• v.20 no.11
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• pp.1313-1318
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• 1999

Lewis bases were employed to control the stoichiometry of ferrite film prepared by light enhanced plating (LEP) technique. When 2,2'-bipyridyl was used as a Lewis base, conversion electron Mosbauer spectroscopy (CEMS) and x-ray powder diffraction (XRD) experiments showed that the main component of the ferrite films was metal-deficient magnetite (Fe3(1-δ)O4). Nonstoichiometry and roughness of LEP films were increased by the addition of 2,2'-bipyridyl. Using ethylenediaminetetraacetate (EDTA) as a Lewis base, produced film that was a mixture of magnetite and Υ-FeO(OH). No low temperature transition (Verwey transition) of magnetite was detected in resistivity and ac-susceptibility measurements for the LEP films. Surface morphology of the LEP films was observed by atomic force microscopy (AFM). The size of dominant particles was about 0.2 μm.