• 한국전자파학회논문지
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• 제20권12호
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• pp.1264-1271
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• 2009

본 논문에서는 이동 무선 통신 기기에 적합하고 다중 대역에서 동작하도록 설계된 칩 슬롯 안테나를 제안하였다. 제안된 안테나는 시스템 회로 기판(30 mm$\times$60 mm$\times$0.8 mm) 위에 칩 안테나(10 mm$\times$20 mm$\times$1.27 mm)를 접속시킨 구조이며, 안테나의 F자 형태의 패턴의 끝단은 비아를 통해 시스템 회로 기판과 연결되어졌다. 따라서 칩 안테나는 시스템 회로 기판의 마이크로스트립 선로로부터 접지면 슬롯 사이의 전이(transition)를 통하여 효과적으로 에너지를 방사한다. 제작된 안테나의 측정 결과 3:1 VSWR 임피던스 대역폭($\leq$-6 dB)은 1.98 GHz(1.61~3.59 GHz)와 0.8 GHz(5.2~6 GHz)로 나타났다. 제안된 안테나는 DCS, PCS, UMTS, WLAN의 주파수 대역을 만족함으로 무선 통신 기기에 적용 가능할 것으로 사료된다.

• 한국통신학회논문지
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• 제27권5C호
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• pp.506-511
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• 2002

본 논문에서는 널리 알려진 슬롯 라인-마이크로스트립 변환을 이용하여 Ka-band에서 동작하는 도파관 형태의 전력 결합기를 제안하였다. 입력이 구형 도파관이고 출력이 마이크로스트립인 전력 분배기는 구형 도파관-슬롯라인 변환, 슬롯라인-마이크로스트립 변환, 그리고, 임피던스 정합회로 등으로 구성되어 있다. 2-way 전력 결합기는 두개의 슬롯라인-마이크로스트립 변환을, 4-way는 2-way 전력 결합기 2개와 sloltline tee junction을 이용하여 개발되었다. 3차원 유한 요소법을 이용하여 제안된 구조를 수치 해석하여 최적의 특성이 나오도록 설계하였고, 손실이 작은 수정 기판을 사용하여 제작하였다. Back-to-back으로 연결된 전력 결합기를 측정한 결과, 공진 주파수를 제외하면, 2-way 전력 분배기는 25.7∼29.8 GHz에서 삽입손실은 1.0 dB 이하, 반사손실은 15 dB 이상이었고, 4-way의 경우는 26∼28.2GHz에서 삽입손실이 1.0 dB 이하, 반사손실이 15 dB 이상의 우수한 특성을 얻을 수 있었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.376-376
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• 2010

The single crystals of p-$CdIn_2Te_4$ were grown by the Bridgman method without the seed crystal. From photocurrent measurements, it was found that three peaks, A, B, and C, correspond to the intrinsic transition from the valence band states of $\Gamma_7$(A), $\Gamma_6$(B), and $\Gamma_7$(C) to the conduction band state of $\Gamma_6$, respectively. The crystal field splitting and the spin orbit splitting were found to be 0.2360 and 0.1119 eV, respectively, from the photocurrent spectroscopy. The temperature dependence of the $CdIn_2Te_4$ band gap energy was given by the equation of $E_g(T)=E_g(0)-(9.43{\times}10^{-3})T^2/(2676+T)$. $E_g$(0) was estimated to be 1.4750, 1.7110, and 1.8229 eV at the valence band states of A, B, and C, respectively. The band gap energy of p-$CdIn_2Te_4$ at room temperature was determined to be 1.2023 eV.

• 한국초전도ㆍ저온공학회논문지
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• 제26권2호
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• pp.9-18
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• 2024

The current study deals with the possible interplay between superconductivity and spin density wave in two band model high temperature iron based superconductor (FeBSC) Ba_1-xNa_xFe₂As₂. The electron and hole bands in the presence of the inter-band interaction between the two bands is becoming a vital issue to deal with the high temperature physics of the iron-based superconductors. In this research work, a model Hamiltonian appropriate for the system under consideration has been developed and the temperature dependent Green's function technique has been employed to get the solution for the equations of motion constructed for the two band model high temperature FeBSC Ba_1-xNa_xFe₂As₂. By making use of the decoupling procedure, the equations of motion for the dependence of superconducting transition temperature (T_C) on spin density wave(SDW) order parameter (Δ_SDW) in the electron intra-band (Δ_sc(e)) , hole intra-band (Δ_sc(h)) and inter-band (Δ_sc(eh)) for Ba_1-xNa_xFe₂As₂ have been obtained. We have also obtained the expression for the dependence of spin density wave transition temperature(T_SDW) on Δ_SDW for Ba_1-xNa_xFe₂As₂. Using some plausible approximations and appropriate experimental values for the parameters in the obtained equations of motion, phase diagrams of T_C versus Δ_sc(e), Δ_sc(h) and Δ_sc(eh) are plotted. Furthermore, a phase diagram of T_SDW versus Δ_SDW is plotted for the material under consideration. Finally, using the above mentioned phase diagrams, the interplay between superconductivity and spin density wave in the two band model high temperature FeBSC Ba_1-xNa_xFe₂As₂ has been demonstrated to be a very distinct possibility. The agreement of the current finding with the experimental observations is quite commendable.

• Bulletin of the Korean Chemical Society
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• 제34권7호
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• pp.2171-2175
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• 2013

The electronic structure and elastic properties of the 4d transition metal carbides MC (M = Y, Zr, Nb, Rh) were studied by means of extended H$\ddot{u}$ckel tight-binding band electronic structure calculations. As the valence electron population of M increases, the bulk modulus of the MC compounds in the rocksalt structure does not increase monotonically. The dominant covalent bonding in these compounds is found to be M-C bonding, which mainly arises from the interaction between M 4d and C 2p orbitals. The bonding characteristics between M and C atoms affecting the variation of the bulk modulus can be understood on the basis of their electronic structure. The increasing bulk modulus from YC to NbC is associated with stronger interactions between M 4d and C 2p orbitals and the successive filling of M 4d-C 2p bonding states. The decreased bulk modulus for RhC is related to the partial occupation of Rh-C antibonding states.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2000년도 International Symposium on Magnetics The 2000 Fall Conference
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• pp.584-584
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• 2000

Electronic structures of ordered Fe$_3X (X = Al, Si), and their derivative ternary alloys of Fe_2TX (T = 3d transition metal) have been investigated by using the linearized muffin-tin orbital (LMTO) band method. The role of the coupling between substituted transition metal and its neighbors is investigated by calculating the magnetic moments and local density of states (LDOS). It is shown that it is essential to include the coupling beyond nearest neighbors in obtaining the magnetic moment of Fe alloy. The preferential sites of T impurities in Fe_3X are determined from the total energy calculations. The derivative ternary alloys of Fe_2TX have characteristic electronic structures of semi-metal for Fe_2VAI and (nearly) half-metal for Fe_2TAI (T = Cr, Mn) and Fe_2TSi (T = V, Cr, Mn)

• 한국통신학회:학술대회논문집
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• 한국통신학회 2006년도 하계종합학술발표회 논문 초록집
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• pp.377-377
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• 2006

• 천문학회지
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• 제29권spc1호
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• pp.345-346
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• 1996

The contrasting values of the oscillator strengths for the (0,0) band of SiH+ molecules for the $A\;^1II-X\;^1{\sum}+$ transition reported in literature, motivated us to reinvestigate the same with the help of a new set of well accepted solar photospheric models, elemental abundances and dissociation energy.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2007년도 제33회 하계학술대회 초록집
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• pp.300-300
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• 2007

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.84-85
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• 2009

The single crystals of p-$CdIn_2Te_4$ were grown by the Bridgman method without the seed crystal. From photocurrent measurements, it was found that three peaks, A, B, and C, correspond to the intrinsic transition from the valence band states of $\Gamma_7(A)$, $\Gamma_6(B)$, and $\Gamma_7(C)$ to the conduction band state of $\Gamma_6$, respectively. The crystal field splitting and the spin orbit splitting were found to be 0.2360 and 0.1119 eV, respectively, from the photocurrent spectroscopy. The temperature dependence of the $CdIn_2Te_4$ band gap energy was given by the equation of $E_g(T)=E_g(0)$ - $(9.43\times10^{-3})T^2$/(2676+T). $E_g(0)$ was estimated to be 1.4750, 1.7110, and 1.8229 eV at the valence band states of A, B, and C, respectively. The band gap energy of $p-CdIn_2Te_4$ at room temperature was determined to be 1.2023 eV.