• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2002년도 ITC-CSCC -1
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• pp.642-645
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• 2002

This paper introduces a way to realize high-pass, band-stop and all-pass transfer functions using Operational Transconductance Amplifiers (OTAs) and grounded capacitors. The basic circuit configuration is constructed with five OTAs and two grounded capacitors. In the circuit with the proportional block, it is shown that the circuit parameters can be independently set and electronically tuned by the transconductance gains. Although the circuit configuration has been Down, it seems that the feature for realizing the high-pass, the band-pass and the all-pass transfer functions makes the structure more attractive and useful. An example is given together with simulated results by PSPICE.

• JSTS:Journal of Semiconductor Technology and Science
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• 제4권3호
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• pp.240-249
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• 2004

In the present paper efforts have been made to optimize InAlAs/InGaAs HEMT by enhancing the effective gate voltage ($(V_c-V_off)$) using pulsed doped structure from uniformly doped to delta doped for microwave frequency applications and reliability. The detailed design criteria to select the proper design parameters have also been discussed in detail to exclude parallel conduction without affecting the del ice performance. Then the optimized value of $V_c-V_off$and breakdown voltages corresponding to maximum value of transconductance has been obtained. These values are then used to predict the transconductance and cut-off frequency of the del ice for different channel depths and gate lengths.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.550-553
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• 2001

In this study, unity current gain frequency f$\_$T/ of GaAs MESFET is predicted with different temperatures up to 400 $^{\circ}C$. Temperature dependence parameters of the device including intrinsic carrier concentration n$\_$i/ effective mass, depletion width are considered to be temperature dependent. Small signal parameters such as gate-source, gate dran capacitances C$\_$gs/ C$\_$gd/ are correlated with transconductance g$\_$m/ to predict the unity current gain frequency. The extrinsic capacitance which plays an important roles in high frequency region has been taken into consideration in evaluating total capacitance by using elliptic integral through the substrate. From the results, f$\_$T/ decreases as the temperature increases due to the increase of small signal capacitances and the mobility degradation. Finally the extrinsic elements of capacitances have been proved to be critical in deciding f$\_$T/ which are originated from the design rule of the device.

• ETRI Journal
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• 제29권6호
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• pp.785-793
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• 2007

In this paper, we present an integrated rail-to-rail fully differential operational transconductance amplifier (OTA) working at low-supply voltages (1.5 V) with reduced power consumption and showing high DC gain. An embedded adaptive biasing circuit makes it possible to obtain low stand-by power dissipation (lower than 0.17 mW in the rail-to-rail version), while the high DC gain (over 78 dB) is ensured by positive feedback. The circuit, fabricated in a standard CMOS integrated technology (AMS 0.35 ${\mu}m$), presents a 37 V/${\mu}s$ slew-rate for a capacitive load of 15 pF. Experimental results and high values of two quality factors, or figures of merit, show the validity of the proposed OTA, when compared with other OTA configurations.

• 대한전자공학회논문지
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• 제27권8호
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• pp.1260-1264
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• 1990

A voltage controlled CMOS operational transconductance amplifier (OTA), whose transconductance is directly proportional to the DC bias voltage, has been designed for many electronic circuit applications. It consists of a differential pair and three ourrent mirrors. The SPICE simulation shows that the conversion sensitivity of the OTA is 41.817 \ulcornerho/V and the linearity error is less than 0.402% over a bias voltage range from -2. OV to 1. OV. Electrically tunalble filters based on voltage controlled impedances, which are realized with OTA's, also have been designed. The SPICE simulation shows that a second-order bandpass filter, whose center frequency is 23KHz at -1. OV, has the conversion sensitivity 6.6KHz/V and the linearity error less than 0.822% over a voltage range from -2.OV tp 1.OV, Tne OTA has been laid out with the 3\ulcorner n-well CMOS design rule adopted in ISRC (inter-university semiconductor research center). The chip size was about $0.756x0.945mm^2$.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 1998년도 하계종합학술대회논문집
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• pp.363-366
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• 1998

25.deg. C 에서 120.deg. C까지 온도를 증가시키면서 hot carrier effect에 의한 nMOSFET의 degradation을 drain current와 transconductance의 변화를 통해 알아보았다. 온도가 증가할수록 hot carrier에 의한 degradation 이 전체적으로 줄어드는 것을 볼수 있었다. stress를 가한 후 reverse mode로 측정하였는데 saturation 영역보다 linear 영역에서 drain current의 degradation이 크게 나탔으며 온도가 증가할수록 이러한 경향이 유지되면서 degradation이 감소하였다. transconductance는 linear 영역과 saturation 영역에서 각각 측정하였는데 온도가 증가할수록 linear 영역의 degradation이 더많이 감소하였다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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• pp.72-75
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• 2003

For the analog output buffer in the data driver for large size and high resolution TFT-LCDs, we proposed operational amplifier (op-amp) which contains newly developed transconductance-boosted input stage which enables the low-power consumption and the high slew-rate. The slew-rate and the quiescent current of the proposed op-amp are $6.1V/{\mu}sec$ and $8{\mu}A$, respectively.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2002년도 ITC-CSCC -2
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• pp.747-750
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• 2002

A circuit building block for realizing a continuous-time active-only current-mode integrator is presented. The proposed integrator is composed only of internally compensated type operational amplifier (OA) and operational transconductance amplifiers (OTAs). The integrator is suitable for integrated circuit implementation in either bipolar or CMOS technologies, since it does not require any external passive elements. Moreover, the integrator gain can be tuned through the transconductance gains of the OTAs. Some application examples in the realization of current-mode network functions using the proposed current-mode integrator as an active element are also given.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2002년도 ITC-CSCC -2
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• pp.751-754
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• 2002

This paper introduces a way to realize biquadratic transfer functions using Operational Amplifiers (OAs) and Operational Transconductance Amplifiers (OTAs). The basic circuit configuration is constructed with two OAs and five OTAs. It is shown that low-pass, band-pass, high-pass, band-stop and all-pass transfer functions can be realized by suitably choosing the input terminals. And the circuit parameters can also be set by the transconductance gains of the OTAs independently. An example is given together with simulated results by PSPICE.

• JSTS:Journal of Semiconductor Technology and Science
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• 제5권2호
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• pp.136-147
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• 2005

A theoretical design evaluation based on a hydrodynamic transport simulation of strained Si-SiGe on insulator (SSOI) type nMOSFETs is reported. Although, the net performance improvement is quite limited by the short channel effects, simulation results clearly show that the strained Si-SiGe type nMOSFETs are well-suited for gate lengths down to 20 nm. Simulation results show that the improvement in the transconductance with decreasing gate length is limited by the long-range Coulomb scattering. An influence of lateral and vertical diffusion of shallow dopants in the source/drain extension regions on the device performance (i.e., threshold voltage shift, subthreshold slope, current drivability and transconductance) is quantitatively assessed. An optimum layer thickness ($t_{si}$ of 5 and $t_{sg}$ of 10 nm) with shallow Junction depth (5-10 nm) and controlled lateral diffusion with steep doping gradient is needed to realize the sub-50 nm gate strained Si-SiGe type nMOSFETs.