• Title/Summary/Keyword: total deposition

Search Result 633, Processing Time 0.032 seconds

Effect of conjugated linoleic acid in diacylglycerol-rich oil on the lipid metabolism of C57BL/6J mice fed a high-fat high-cholesterol diet

  • Lee, Jeung Hee;Cho, Kyung-Hyun;Lee, Ki-Teak
    • Korean Journal of Agricultural Science
    • /
    • v.41 no.1
    • /
    • pp.47-58
    • /
    • 2014
  • The effect of conjugated linoleic acid (CLA) isomers esterified in diacylglycerol (DAG)-rich oil on lipid metabolism was investigated. Since dietary DAG has been known to induce the regression of atherosclerosis, CLA-DAG and olive-DAG oils containing similar levels of DAG (51.4~54.2%) were synthesized from olive oil. Hyperlipidemic C57BL/6J mice were then fed high-fat high-cholesterol diets supplemented with these oils (5% each) for 7 wk. The CLA-DAG diet containing 2.1% CLA isomers (0.78% c9,t11-CLA; 1.18% t10,c12-CLA) remarkably increased the levels of total plasma cholesterol and glutamic oxaloacetic transaminase (GOT) along with hepatic cholesterol and triacylglycerol (TAG) contents. Furthermore, the CLA-DAG diet inhibited fat uptake into adipose tissue whereas fat deposition (especially in the liver) was increased, resulting in the development of fatty livers. Hepatic fatty acid composition in the CLA-DAG mice was different from that of the olive-DAG mice, showing higher ratios of C16:1/C16:0 and C18:1/C18:0 in the liver. The activity of hepatic acyl-CoA:cholesterol acyltransferase (ACAT) was higher in CLA-DAG mice while plasma lecithin:cholesterol acyltransferase (LCAT) activity and the ferric reducing ability of plasma (FRAP) were lower in CLA-DAG mice compared to the olive-DAG animals. Results of the present study suggest that CLA incorporation into DAG oil could induce atherosclerosis in mice.

Effect of Cathode in Electrochemical Reaction for Treating Ballast Water (선박평형수 처리를 위한 전기화학 반응에서 음극의 영향)

  • Kim, Dong Seog;Park, Hye Jin;Yoon, Jong Mun;Park, Yong Seok;Park, Young Seek
    • Journal of Environmental Science International
    • /
    • v.23 no.6
    • /
    • pp.1175-1182
    • /
    • 2014
  • In this study, we examined the effect of cathode from electrolysis reactor for treating ballast water. We are going to select a suitable cathode for seawater electrolysis after considering the effect on the generation of the oxidant of cathode and the electrode deposition materials adhering to the surface of cathode. Anode is Ru-Ti-Pd electrode and cathode are Ti, Pt, JP520 (Ni-Pt-Ce) electrodes. Using the cathode of the three types, experiments were conducted to examine the effects of TRO (total residual oxidants) generation concentration and RNO (N, N-Dimethyl-4-nitrosoaniline, indicator of the generation of OH radical) degradation concentration (in 1, 35 psu), ohmic drop, FESEM(field emission scanning electron microscope) observation of cathode surface and EDX (energy dispersive X-ray spectroscopy) measurements of attached fouling material. The results showed that TRO generation concentration and RNO degradation concentration in according to each type of cathode are not different. The attached fouling materials were observed on the surface of Ti and the JP520 electrode by the observation of SEM after electrolysis for two hours, but it was not observed on the surface of Pt electrode. When considering the surface ohmic drop of cathode and the attached fouling materials, Pt electrode was judged as the excellent cathode.

Deposition Characteristic of InNx Films by Reactive DC Magnetron Sputtering (반응성 직류 스퍼터법에 의한 질화 인듐 박막의 제막 특성)

  • 송풍근;류봉기;김광호
    • Journal of the Korean Ceramic Society
    • /
    • v.40 no.8
    • /
    • pp.739-745
    • /
    • 2003
  • In $N_{x}$ films were deposited on soda-lime glass without substrate heating by reactive dc magnetron sputtering using indium (In) metal target. Depositions were carried out under various total gas pressures ( $P_{tot}$) of mixture gases (Ar+$N_2$ or He+$N_2$). He gas was introduced to $N_2$ gas in order to enhance the reactivity of nitrogen on film surface by the "penning ionization". Plasma impedance decreased greatly when 20% or more introduced the $N_2$ gas. This is due to the In $N_{x}$ layers formed on target surface because a secondary electron emission rate of InN is small compared with In metal. XRD patterns of the films revealed that <001> preferred oriented polycrystalline In $N_{x}$ films, where the crystallinity of the films was improved with decrease of $P_{tot}$ and with increase of $N_2$ flow ratio. The improvement of the crystallinity and stoichimetry of the In $N_{x}$ films were considered to be caused by an increase in the activated nitrogen radicals and also by an increase in the kinetic energy of sputtered In atoms arriving at growing film surface, which should enhance the chemical reaction and surface migration on the growing film surface, respectively. Furthermore, the films deposited using mixture gases of He+$N_2$ showed higher crystallinity compared with the film deposited by the mixture gases of Ar+$N_2$.$.EX>.

Low-Temperature Si and SiGe Epitaxial Growth by Ultrahigh Vacuum Electron Cyclotron Resonance Chemical Vapor Deposition (UHV-ECRCVD)

  • Hwang, Ki-Hyun;Joo, Sung-Jae;Park, Jin-Won;Euijoon Yoon;Hwang, Seok-Hee;Whang, Ki-Woong;Park, Young-June
    • Proceedings of the Korea Association of Crystal Growth Conference
    • /
    • 1996.06a
    • /
    • pp.422-448
    • /
    • 1996
  • Low-temperature epitaxial growth of Si and SiGe layers of Si is one of the important processes for the fabrication of the high-speed Si-based heterostructure devices such as heterojunction bipolar transistors. Low-temperature growth ensures the abrupt compositional and doping concentration profiles for future novel devices. Especially in SiGe epitaxy, low-temperature growth is a prerequisite for two-dimensional growth mode for the growth of thin, uniform layers. UHV-ECRCVD is a new growth technique for Si and SiGe epilayers and it is possible to grow epilayers at even lower temperatures than conventional CVD's. SiH and GeH and dopant gases are dissociated by an ECR plasma in an ultrahigh vacuum growth chamber. In situ hydrogen plasma cleaning of the Si native oxide before the epitaxial growth is successfully developed in UHV-ECRCVD. Structural quality of the epilayers are examined by reflection high energy electron diffraction, transmission electron microscopy, Nomarski microscope and atomic force microscope. Device-quality Si and SiGe epilayers are successfully grown at temperatures lower than 600℃ after proper optimization of process parameters such as temperature, total pressure, partial pressures of input gases, plasma power, and substrate dc bias. Dopant incorporation and activation for B in Si and SiGe are studied by secondary ion mass spectrometry and spreading resistance profilometry. Silicon p-n homojunction diodes are fabricated from in situ doped Si layers. I-V characteristics of the diodes shows that the ideality factor is 1.2, implying that the low-temperature silicon epilayers grown by UHV-ECRCVD is truly of device-quality.

  • PDF

The study of silicon etching using the high density hollow cathode plasma system

  • Yoo, Jin-Soo;Lee, Jun-Hoi;Gangopadhyay, U.;Kim, Kyung-Hae;Yi, Jun-Sin
    • 한국정보디스플레이학회:학술대회논문집
    • /
    • 2003.07a
    • /
    • pp.1038-1041
    • /
    • 2003
  • In the paper, we investigated silicon surface microstructures formed by reactive ion etching in hollow cathode system. Wet anisotropic chemical etching technique use to form random pyramidal structure on <100> silicon wafers usually is not effective in texturing of low-cost multicrystalline silicon wafers because of random orientation nature, but High density hollow cathode plasma system illustrates high deposition rate, better film crystal structure, improved etching characteristics. The etched silicon surface is covered by columnar microstructures with diameters form 50 to 100nm and depth of about 500nm. We used $SF_{6}$ and $O_{2}$ gases in HCP dry etch process. This paper demonstrates very high plasma density of $2{\times}10^{12}$ $cm^{-3}$ at a discharge current of 20 mA. Silicon etch rate of 1.3 ${\mu}s/min$. was achieved with $SF_{6}/O_{2}$ plasma conditions of total gas pressure=50 mTorr, gas flow rate=40 sccm, and rf power=200 W. Our experimental results can be used in various display systems such as thin film growth and etching for TFT-LCDs, emitter tip formations for FEDs, and bright plasma discharge for PDP applications. In this paper we directed our study to the silicon etching properties such as high etching rate, large area uniformity, low power with the high density plasma.

  • PDF

Cost-effective surface passication layers by RTP and PECVD (RTP 와 PECVD을 이용한 저가의 표면 passivation 막들의 특성연구)

  • Lee, Ji-Youn;Lee, Soo-Hong
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2004.05a
    • /
    • pp.142-145
    • /
    • 2004
  • In this work, we have investigated the application of rapid thermal processing (RTP) and plasma enhanced chemical vapour deposition (PECVD) for surface passivation. Rapid thermal oxidation (RTO) has sufficiently low surface recombination velocities (SRV) $S_{eff}$ in spite of a thin oxides and short process time. The effective lifetime is increasing with an increase of the oxide thickness. In the same oxide thickness, The effective lifetime is independent on the process temperature and time. $S_{eff,max}$ is exponentially decreased with increasing oxide thickness. $S_{eff,max}$ can be reduced to 200 cm/s with only 10 nm oxide thickness. On the other hand, three different types of SiN are reviewed. SiN1 layer has a thickness of about 72 nm and a refractive index of 2.8. Also, The SiN1 has a high passivation quality. The effective lifetime and SRV of 1 $\Omega$ cm Float zone (FZ) silicon deposited with SiN1 is about 800 s and under 10 cm/s, respectively. The SiN2 is optimized for the use as an antireflection layer since a refractive index of 2.3. The SiN3 is almost amorphous silicon caused by less contents of N2 from total process. The effective lifetime on the FZ 1 ${\Omega}cm$ is over 1000 ${\mu}s$.

  • PDF

울릉분지 돌고래 시추공의 생층서: 고환경 및 이들의 석유탐사에의 응용

  • 이성숙;윤혜수;배부영;박세진;이의형;강소라;김재호;김기현
    • 한국석유지질학회:학술대회논문집
    • /
    • autumn
    • /
    • pp.50-67
    • /
    • 1999
  • Biostratigraphic and paleoenvironmental analyses are carried out on cutting samples from the Dolgorae wells drilled in the Ulleung basin. The clayey, silty, and sandy sediments of the wells yield various microfossil assemblages of relatively good preservation, among which five fossil groups are reported; a total of 97 foraminiferal species of 66 genera, 19 nannofossil species of 12 genera, 86 ostracod species of 41 genera, 107 diatom species of 44 genera, and 124 dinoflagellate cysts species of 45 genera. Based on microfossils the geologic ages of the Dolgorae wells are dated to be from late Early Miocene to Early Pleistocene. Several biohorizons are defined in Neogene successions by the LOD (Last Ocurrence Datum) and FOD (First Ocurrence Datum) of marker species including G. truncatulinoides (LOD: 1.9 Ma) of foraminifera; C. macintyeri (LOD: 1.64-1.60), G. oceanica (FOD: 1.65 Ma), G. caribbeanica (1.72 Ma), D. brouweri (LOD: 2 Ma), R. pseudoumbilica (LOD: 3.66 Ma), P. lacunosa (FOD: 4.2 Ma) of nannofossils; S. ellipsoideus (LOD: 4 Ma), S. palcacantha (LOD: 10.2), C. giusepei (LOD: 14 Ma) of dinocysts; D. seminae v. fossilis (FOD: 3.7 Ma), T. antiqua (LOD: 1.7 Ma), T. convexa (LOD: 2.4 Ma), N. kamtschatica (LOD: 2.58 Ma), T. oestrupii(FOD: 5.1 Ma) of diatoms. Abundance patterns of microfossils throughout the wells reflect changes in paleoenvironmental and sedimentological settings of the basin in relation to sea-level variations. According to these data the large-cycle and small-cycle changes of transgression and regression phases are observed in terrestrial to marine sediments. This high-resolution sequence biostratigraphy established by various fossil groups enabled more reliable correlation between strata and refined interpretation on deposition systems of the basin. It also proved to provide fundamental and precise informations regarding stratigraphic correlation, tectonic events, basin, and depositional history for hydrocarbon explorations, especially in collaboration with seismic-stratigrahic analyses.

  • PDF

New curing method using gaseous oxidant on sweet potato (Ipomoea batatas)

  • Jin, Hyunjung;Kim, Wook
    • Proceedings of the Korean Society of Crop Science Conference
    • /
    • 2017.06a
    • /
    • pp.39-39
    • /
    • 2017
  • In Asia, sweet potato (Ipomoea batatas) is a very important crop for starch production. Approximately 74.3% of the total sweet potato production quantity is produced in Asia (FAO, 2014) and China is the largest producer of sweet potato. Post-harvest management is particularly important because it is difficult to maintain the quality as well as quantity of sweet potatoes. Despite the importance of post-harvest management, researches on sweet potato have been focused on production-related study such as breeding of new variety, improved techniques of cultivation, so there is limited research on storage after harvest. Curing is a normal practice after sweet potato harvest to promote wound healing and extend postharvest storage life. In Korea, harvested sweet potatoes are usually cured for 4 to 7 days at $30-33^{\circ}C$ and 80-95% relative humidity within one week. Since the optimum storage temperature of sweet potato is regarded as $15-20^{\circ}C$, additional facilities and costs are required to raise the temperature for curing. However, the majority of small farmers do not have the capacity to provide additional facilities and costs. This study was initiated to suggest a new curing method to accelerate the wound healing by applying chemical oxidation to the wound surface of sweet potato. Oxidative stress is known to play an important role in the synthesis of secondary metabolites including lignin. In addition, chemical oxidation can be applied to prevent spoilage caused by microorganisms. Powerful gaseous oxidant with excellent penetration ability and superior sterilization effect was selected for this study. Lignification, weight loss, and spoilage rate of artificially wounded sweet potatoes were investigated after oxidant fumigation. There were clear differences in morphological analysis such as lignification pattern, lignin deposition color, and continuity of lignified cell layers between oxidant-fumigated sweet potatoes and control. These results show that gaseous oxidant can be used to supplement or replace the curing practice, to improve shelf-life as well as curing cost reduction.

  • PDF

The Product properties of Bituminous Coal in Two-Stage Pyrolysis (유연탄의 이단 열분해에 따른 생성물의 특성)

  • 송광섭;이상남;윤형기;김상돈
    • Journal of Energy Engineering
    • /
    • v.2 no.2
    • /
    • pp.208-214
    • /
    • 1993
  • Pyrolysis of bituminous coal has been carried out in a two-stage fixed bed reactor to produce high heating value gas(7000 kcal/N㎥) for industrial or town gas usage. The effects of coke catalyst, pyrolysis temperature (468∼565$^{\circ}C$), and catalytic cracking temperature (700∼850$^{\circ}C$) on the product gas properties from pyrolysis of bituminous coal have been determined. From pyrolysis of Dong Jin coal with coke, the carbon deposition on catalyst is found to be less than 5% of product tar and approximately 15% of total energy iii the parent coal can be recovered as high heating value gas. Oil composition in the product tar from the two-stage pyrolysis is higher than that from low-temperature pyrolysis. The tar produced from pyrolysis below 516$^{\circ}C$ can be easily catalytically cracked but, the tar produced above 565$^{\circ}C$ cannot be cracked easily with catalyst. From the product gas analysis, the catalytic cracking temperature should be maintained below 800$^{\circ}C$ since cracking speed of ethylene increases remarkably with the cracking temperature above 800$^{\circ}C$.

  • PDF

A Case Study of Three Dimensional Human Mimic Phantom Production for Imaging Anatomy Education (영상해부학 교육을 위한 3차원 인체 모사 조형물 제작 사례 연구)

  • Seoung, Youl-Hun
    • Journal of the Korean Society of Radiology
    • /
    • v.12 no.1
    • /
    • pp.71-78
    • /
    • 2018
  • In this study, human mimic phantoms outputted by three-dimensional (3D) printing technology are reported. Polylactic acid and a personal 3D printer - fused deposition modeling (FDM) - are used as the main material and the printing device. The output of human mimic phantoms performed in the following order: modeling, slicing and G-code conversion, output variable setting, 3D output, and post-processing. The students' learning satisfaction (anatomical awareness, study interest) was measured on 5-point Likert scale. After that, Twenty of those phantoms were outputted. The total output took 11,691 minutes (194 hours 85 minutes) and the average output took 584.55 minutes (9 hours 7 minutes). The filament used for the experiment was 2,390.2 g, and the average use of the filament was 119.51 g. The learning satisfaction of anatomical awareness was 4.6 points on the average and the interest of the class was on average 4.5 points. It is expecting that 3D printing technology can enhance the learning effect of imaging anatomy education.