• 전자공학회논문지S
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• 제35S권5호
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• pp.48-58
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• 1998

In this paper, we proposed a new algorithm using characteristics of th ereconstructed phase trajectory by topological mapping developed for a real-tiem detection of the QRS complexes of ECG signals. Using fill-factor algorithm and mutual information algorithm which are in genral used to find out the chaotic characteristics of sampled signals, we inferred the proper mapping parameter, time delay, in ECG signals and investigated QRS detection rates with varying time delay in QRS complex detection. And we compared experimental time dealy with the theoretical one. As a result, it shows that the experimental time dealy which is proper in topological mapping from ECG signals is 20ms and theoretical time delays of fill-factor algorithm and mutual information algorithm are 20.+-.0.76ms and 28.+-.3.51ms, respectively. From these results, we could easily infer that the fill-factor algorithm in topological mapping from one-dimensional sampled ECG signals to two-dimensional vectors, is a useful algorithm for the detemination of the proper ECG signals to two-dimensional vectors, is a useful algorithm for the detemination of the proper time delay. Also with the proposed algorithm which is very simple and robust to low-frequency noise as like baseline wandering, we could detect QRS complex in real-time by simplifying preprocessing stages. For the evaluation, we implemented the proposed algorithm in C-language and applied the MIT/BIH arrhythmia database of 48 patients. The proposed algorithm provides a good performance, a 99.58% detection rate.

• 전자공학회논문지D
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• 제36D권11호
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• pp.33-44
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• 1999

3차원 위상변이 마스크의 단차 효과를 분석하기 위해 투명 경계조건, 주기적인 경계조건, 및 연속조건을 가진 경계요소법을 광 리소그래피 공정 시뮬레이션에 새로이 적용하였으며, 해석적인 해와 참고문헌의 결과와 비교함으로써 구현된 모듈의 정확성을 검증하였다. 또한, 기존의 rigorous coupled wave analysis에 의한 방법에 비해 수렴성과 계산 시간 측면에서 경계요소법을 이용하는 것이 더 효율적임을 확인하였다. 끝으로 비교적 간단한 위상변이 마스크와 다층-위상변이 마스크에 대한 최적 설계 과정을 기술하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.139.2-139.2
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• 2016

Electrons and phonons in chalcogenide-based materials play are important factors in the performance of an optical data storage media and thermoelectric devices. However, the fundamental kinetics of carriers in chalcogenide materials remains controversial, and active debate continues over the mechanism responsible for carrier relaxation. In this study, we investigated ultrafast carrier dynamics in an multilayered $\{Sb(3{\AA})/Te(9{\AA})\}n$ thin film during the transition from the amorphous to the crystalline phase using optical pump terahertz probe spectroscopy (OPTP), which permits the relationship between structural phase transition and optical property transitions to be examined. Using THz-TDS, we demonstrated that optical conductance and carrier concentration change as a function of annealing temperature with a contact-free optical technique. Moreover, we observed that the topological surface state (TSS) affects the degree of enhancement of carrier lifetime, which is closely related to the degree of spin-orbit coupling (SOC). The combination of an optical technique and a proposed carrier relaxation mechanism provides a powerful tool for monitoring TSS and SOC. Consequently, the response of the amorphous phase is dominated by an electron-phonon coupling effect, while that of the crystalline structure is controlled by a Dirac surface state and SOC effects. These results are important for understanding the fundamental physics of phase change materials and for optimizing and designing materials with better performance in optoelectronic devices.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2015년도 임시총회 및 하계학술연구발표회
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• pp.52-52
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• 2015

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.59-59
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• 2011

We will report atomically sharp epitaxial growth of $Bi_2Se_3$ three-dimensional topological insulator films on Si(111) substrate with molecular beam epitaxy (MBE). It was achieved by employing two step growth temperatures to prevent any formation of second phase, like as $SiSe_2$ clusters, between $Bi_2Se_3$ and Si substrate at the early stage of growth. The growth rate was determined completely by Bi flux and the Bi:Se flux ratio was kept ~1:15. The second-phase-free atomically sharp interface was verified by RHEED, TEM and XRD. Based on the RHEED analysis, the lattice constant of $Bi_2Se_3$ relaxed to its bulk value during the first quintuple layer implying the absence of strain from the substrate. Single-crystalline XRD peaks of $Bi_2Se_3$ were observed in films as thin as 4 QL. TEM shows full epitaxial structure of $Bi_2Se_3$ film down to the first quintuple layer without any second phases. This growth method was used to grow high quality epitaxial $Bi_2Se_3$ films from 3 QL to 3600 QL. The magneto-transport properties of these thin films show a robust 2D surface state which is thickness independent.

• 한국지구과학회지
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• 제23권1호
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• pp.105-111
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• 2002

The observation of the new biotite isograd (chlorite + chloritoid = andalusite + biotite) in the Mungyong coal field requires the modification of Harte and Hudson's (1979) metapelite grid which eliminates the stability field of staurolite + cordierite assemblages. The newly proposed metapelite grid by Ahn and Nakamura (2000) can define more properly the isograd reaction observed from nature. We discuss first topological interrelations between synthetic system (FASHO-, KFASHO-, KFMASH system) on an isobaric section at 2kbar, where phase relations are well constrained. The following discussion is concentrated on the topological relations between stable reactions. At the last, we discuss the petrogenetic significance of the Ahn's petrogenetic grid compared with theoretically computed grids. Ahn's petrogenetic grid is consistent with synthetic and natural system, and is one of the excellent example of KFMASH approximation in metapelite.

• Journal of Computational Design and Engineering
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• 제3권2호
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• pp.161-177
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• 2016

In history based parametric CAD modeling systems, persistent identification of the topological entities after design modification is mandatory to keep the design intent by recording model creation history and modification history. Persistent identification of geometric and topological entities is necessary in the product design phase as well as in the re-evaluation stage. For the identification, entities should be named first according to the methodology which will be applicable for all the entities unconditionally. After successive feature operations on a part body, topology based persistent identification mechanism generates ambiguity problem that usually stems from topology splitting and topology merging. Solving the ambiguity problem needs a complex method which is a combination of topology and geometry. Topology is used to assign the basic name to the entities. And geometry is used for the ambiguity solving between the entities. In the macro parametrics approach of iCAD lab of KAIST a topology based persistent identification mechanism is applied which will solve the ambiguity problem arising from topology splitting and also in case of topology merging. Here, a method is proposed where no geometry comparison is necessary for topology merging. The present research is focused on the enhancement of the persistent identification schema for the support of ambiguity problem especially of topology splitting problem and topology merging problem. It also focused on basic naming of pattern features.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.128.1-128.1
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• 2013

We investigated the correlation between electrical transport and mechanical stress in $Bi_2Te_2Se$ by using a conductive probe atomic force microscopy in an ultra-high vacuum environment. Uniform distribution of measured friction and current were observed over a single quintuple layer terrace, which is an indication of the uniform chemical composition of the surface. By measuring the charge transport of $Bi_2Te_2Se$ surface as a function of the load applied by a tip to the sample, we found that the current density varies with applied load. The variation of current density was explained in light of the combined effect of the changes in the in-plane conductance and spin-orbit coupling that were theoretically predicted. We suppose that the local density of states is modified by tip-induced strain, but topological phase still remains. We exposed a clean topological insulator surface by tip-induced indentation. The surface conductance on the indented $Bi_2Te_2Se$ surface was studied, and the role of surface oxide on the surface conductance is discussed.

• 진공이야기
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• 제5권1호
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• pp.13-17
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• 2018

Phase transition is not unique to solid state systems or homogeneous molecular systems but it is also observed in highly heterogeneous biological systems. Phase transition and phase separation in cells are recently being found to be central to many biological functions by temporarily and locally controlling the storage and exchange of certain proteins and RNAs. There are also clues suggesting them to be playing pivotal roles in the spatial organization of chromosomes into topological domains and its time-dependent control. Here we introduce early efforts to explain at the molecular level how the spatiotemporal organization of chromosomes are programmed and modulated by the sequence and chemical modifications of the DNA. Continuing works may provide a physical framework to understand the molecular level control of chromosome structure and dynamics that determine the epigenetic state and the fate of the cells.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.14-15
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• 2010

Recently there has been growing interest in topological insulators or the quantum spin Hall (QSH) phase, which are insulating materials with bulk band gaps but have metallic edge states that are formed topologically and robust against any non-magnetic impurity [1]. In a three-dimensional material, the two-dimensional surface states correspond to the edge states (topological metal) and their intriguing nature in terms of electronic and spin structures have been experimentally observed in bulk Bi1-xSbx single crystals [2,3,4]. However, if we want to know the transport properties of these topological metals, high purity samples as well as very low temperature will be needed because of the contribution from bulk states or impurity effects. In a recent report, it was also shown that an intriguing coupling between the surface and bulk states will occur [5]. A simple solution to this bothersome problem is to prepare a topological metal on an ultrathin film, in which the surface-to-bulk ratio is drastically increased. Therefore in the present study, we have investigated if there is a method to make an ultrathin Bi1-xSbx film on a semiconductor substrate. From reflection high-energy electron diffraction observation, it was found that single crystal Bi1-xSbx films (0${\sim}30\;{\AA}A$ can be prepared on Si(111)-$7{\times}7$. The transport properties of such films were characterized by in situ monolithic micro four-point probes [6]. The temperature dependence of the resistivity for the x=0.1 samples was insulating when the film thickness was $240\;{\AA}A$. However, it became metallic as the thickness was reduced down to $30\;{\AA}A$, indicating surface-state dominant electrical conduction. Figure 1 shows the Fermi surface of $40\;{\AA}A$ thick Bi0.92Sb0.08 (a) and Bi0.84Sb0.16 (b) films mapped by angle-resolved photoemission spectroscopy. The basic features of the electronic structure of these surface states were shown to be the same as those found on bulk surfaces, meaning that topological metals can be prepared at the surface of an ultrathin film. The details will be given in the presentation.