• Title/Summary/Keyword: tight-binding method

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The Electronic Structure of Carbon Nanotubes with Finite Length : Tight Binding Theory

  • Moon, Won-Ha;Kim, Won-Woo;Hwang, Ho-Jung
    • Transactions on Electrical and Electronic Materials
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    • v.3 no.1
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    • pp.23-29
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    • 2002
  • The electronic properties of Carbon Nanotube(CNT) are currently the focus of considerable interest. In this paper, the electronic properties of finite length effect in CNT for the carbon nano-scale device is presented. To Calculate the electronic properties of CNT, Empirical potential method (the extended Brenner potential for C-Si-H) for carbon and Tight Binding molecular dynamic (TBMD) simulation are used. As a result of study, we have known that the value of the band gap decreases with increasing the length of the tube. The energy band gap of (6,6) armchair CNT have the ranges between 0.3 eV and 2.5 eV. Also, our results are in agreements with the result of the other computational techniques.

A study on Electronic properties of finite length effect in Carbon nanotubes for Carbon Nanoscale device : Tight binding theory (나노디바이스를 위한 탄소 나노튜브의 유한길이에 따른 전기적 특성 연구 : Tight binding 이론)

  • 문원하;강진철;황호정
    • Proceedings of the IEEK Conference
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    • 2000.06b
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    • pp.103-106
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    • 2000
  • The electronic properties of carbon nanotube are currently the focus of considerable interest. In this paper, the electronic properties of finite length effect in carbon nanotube for cabon nanoscale device is presented. To calculate the electronic properties of carbon nanotube, Empirical potential method (Brenner' hydrocarbon potential) for carbon and Tight binding molecular dynamic (TBMD) simulation are used. As a result of study, we have known that the value of the band gap decreases with increasing the length of the tube. The energy band gap of (6, 6) armchair carbon nanotube have the ranges between 0.3 eV and 2.5 eV. Also, our results were compared with the results of the other computational techniques. As that result, our results are very well united.

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Tight-binding Electronic Structure Study of the β'- and β''-Phases of the Organic Conducting Salts (BEDT-TTF)2[(IBr2)0.2(BrICl)0.1(ICl2)0.7]

  • Koo, Hyun-Joo;WhangBo, Myung-Hwan
    • Bulletin of the Korean Chemical Society
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    • v.28 no.2
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    • pp.241-245
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    • 2007
  • The electronic structures of the new organic conducting salts, the β'- and β''-phases of (BEDT-TTF)2[(IBr2)0.2(BrICl)0.1(ICl2)0.7], were examined by calculating their electronic band structures, Fermi surfaces and HOMO-HOMO interaction energies using the extended Huckel tight binding method. On the basis of these calculations, we probed why the β'-phase is semiconducting while the β ''-phase is metallic.

Electronic States of Uranium Dioxide

  • Younsuk Yun;Park, Kwangheon;Hunhwa Lim;Song, Kun-Woo
    • Nuclear Engineering and Technology
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    • v.34 no.3
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    • pp.202-210
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    • 2002
  • The details of the electronic structure of the perfect crystal provides a critically important foundation for understanding the various defect states in uranium dioxide. In order to understand the local defect and impurity mechanism, the calculation of electronic structure of UO$_2$ in the one-electron approximation was carried out, using a semi-empirical tight-binding formalism(LCAO) with and without f-orbitals. The energy band, local and total density of states for both spin states are calculated from the spectral representation of Green’s function. The bonding mechanism in Perfect lattice of UO$_2$ is discussed based upon the calculations of band structure, local and total density of states.

Electronic Structure of Oxygen in the Defective Nickel Monoxide

  • Lee, Gwang Sun;Gu, Hyeon Ju;Ham, Gyeong Hui;An, Un Seon
    • Bulletin of the Korean Chemical Society
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    • v.16 no.2
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    • pp.164-168
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    • 1995
  • The band structure of nickel monoxide having a cation defect rock salt structure is calculated by means of the tight-binding extended Huckel method. The calculation is also made for the net charge, the DOS, the COOP, the electron density of the constituent atoms, and the O 1s binding energy shift when one of the adjacent nickel atoms is defected. It is found that the band gap near the Γ direction on the Brillouin zone is about 0.2 eV, and that all of the properties calculated including the electronic structure of the oxygen atom are more effectively affected by the surface defect than the inside one. The core O 1s binding energy shift is calculated by the use of valence potential method and the results are very satisfactory in comparison with the XPS experimental findings.

The Bonding of Interstitial Hydrogen in the NiTi Intermetallic Compound

  • Kang, Dae-Bok
    • Bulletin of the Korean Chemical Society
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    • v.27 no.12
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    • pp.2045-2050
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    • 2006
  • The interstitial hydrogen bonding in NiTi solid and its effect on the metal-to-metal bond is investigated by means of the EH tight-binding method. Electronic structures of octahedral clusters $Ti_4Ni_2$ with and without hydrogen in their centers are also calculated using the cluster model. The metal d states that interact with H 1s are mainly metal-metal bonding. The metal-metal bond strength is diminished as the new metal-hydrogen bond is formed. The causes of this bond weakening are analyzed in detail.

Electronic Band Structure of N and P Dopants in Diamond

  • 강대복
    • Bulletin of the Korean Chemical Society
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    • v.19 no.6
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    • pp.628-634
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    • 1998
  • The properties of the n-type impurities nitrogen and phosphorus in diamond have been investigated by means of electronic band structure calculations within the framework of the semiempirical extended Huckel tight-binding method. For diamond with the nitrogen and phosphorus substitutional impurities, calculated density of states shows the impurity level deep in the band gap. This property can be derived from the substantial <111> relaxation of the impurity and nearest-neighbor carbon atoms, which is associated with the population of an antibonding orbital between them. The passivated donor property of the P-vacancy complex which lies deep in the gap is also discussed.

Real-space TB-LMTO-recursion Electronic Structure Calculations for Ferromagnetic Fe, Co, and Ni (실공간 TB-LMTO-recursion 전자구조 방법에 의한 자성연구 : Fe, Co, Ni)

  • 박진호;조화석;윤석주;민병일
    • Journal of the Korean Magnetics Society
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    • v.5 no.5
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    • pp.846-853
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    • 1995
  • In order to study electronic structures for locally disordered systems, we have developed a first-principle self-con-sistent-spin-polarized real space band method (TB-LMTO-R), which combines the tight-binding(TB) linear-muffin-tin orbital(LMTO) band rrethod and the recursion(R) rrethod. The TB-LMTO-R rrethod has been applied to fer-romagnetic bec Fe, hcp Co, and fcc Ni. With varying cluster sizes, recursion coefficients, and the order of the TB-Hamiltonian, we have calculated the local density of states(LDOS) and magnetic moments. It is found that the calculation with 5,000 atoms cluster, 40 continued fractions, and the second-order TB-Hamiltonian yields a conver¬gent result in agreement with those from the conventional LMTO. In this way, we have demonstrated a physical transparency of the TB-LMTO-R method as a real space description.

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Electronic properties of graphene nanoribbons with Stone-Wales defects using the tight-binding method

  • M.W. Chuan;S.Z. Lok;A. Hamzah;N.E. Alias;S. Mohamed Sultan;C.S. Lim;M.L.P Tan
    • Advances in nano research
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    • v.14 no.1
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    • pp.1-15
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    • 2023
  • Driven by the scaling down of transistor node technology, graphene became of interest to many researchers following the success of its fabrication as graphene nanoribbons (GNRs). However, during the fabrication of GNRs, it is not uncommon to have defects within the GNR structures. Scaling down node technology also changes the modelling approach from the classical Boltzmann transport equation to the quantum transport theory because the quantum confinement effects become significant at sub-10 nanometer dimensions. The aim of this study is to examine the effect of Stone-Wales defects on the electronic properties of GNRs using a tight-binding model, based on Non-Equilibrium Green's Function (NEGF) via numeric computation methods using MATLAB. Armchair and zigzag edge defects are also implemented in the GNR structures to mimic the practical fabrication process. Electronic properties of pristine and defected GNRs of various lengths and widths were computed, including their band structure and density of states (DOS). The results show that Stone-Wales defects cause fluctuation in the band structure and increase the bandgap values for both armchair GNRs (AGNRs) and zigzag GNRs (ZGNRs) at every simulated width. In addition, Stone-Wales defects reduce the numerical computation DOS for both AGNRs and ZGNRs. However, when the lengths of the structures increase with fixed widths, the effect of the Stone-Wales defects become less significant.

Electronic Structures and Noncollinear Magnetic Properties of Structurally Disordered Fe

  • Park, Jin-Ho;Min, B.I.
    • Journal of Magnetics
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    • v.15 no.1
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    • pp.1-6
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    • 2010
  • The magnetic properties of amorphous Fe were investigated by examining the electronic structures of structurally disordered Fe systems generated from crystalline bcc and fcc Fe using a Monte-Carlo simulation. As a rst principles band method, the real space spin-polarized tight-binding linearized-mun-tin-orbital recursion method was used in the local spin density approximation. Compared to the crystalline system, the electronic structures of the disordered systems were characterized by a broadened band width, smoothened local density of states, and reduced local magnetic moment. The magnetic structures depend on the short range configurations. The antiferromagnetic structure is the most stable for a bcc-based disordered system, whereas the noncollinear spin spiral structure is more stable for a fcc-based system.