• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.122-122
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• 2010

A Static Induction Thyristor (SI-Thyristor) has a great potential as power semiconductor switch for pulsed power or high voltage applications with fast turn-on switching time and high switching stress endurance (di/dt, dV/dt). However, due to direct commutation between gate driver and SI-Thyristor, it is difficult to design optimal gate driver at the aspect of impedance matching for fast gate current driving into internal SI-Thyristor. Thus, to penetrate fast positive gate current into steady off state of the SI-Thyristor, it is proposed and proceeded the internal impedance calculation of the SI-Thyristor at steady off state with the gate driver while switching conditions that are indicated applied gate voltage, $V_{GK}$ and applied high voltage across anode and cathode, $V_{AK}$.

• 대한전기학회논문지
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• 제33권4호
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• pp.127-133
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• 1984

In this paper the performance of a variable-phase thyristor motor combined with a phase splitter and a single-phase tapped induction motor is investigated. The phase splitter consists of a bridge type thyristor switching circuit. The regulating power flow of the phase splitter is obtained from the switching phase difference of thyristor switching sequences. The proper switching performance improves the torque-speed-characteristics of the motor and its operation efficiency. We simplify the motor system th using the tapped windng reactances of the motor as the complementary element of the thyristor phase splitter. We discussed the practicality of this motor system through the analysis of simulation result and the voltage and the current wave forms obtained froms obtained from the experiment.

• 전기의세계
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• 제23권4호
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• pp.32-35
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• 1974

Thyristor inverter의 유형은 Switching기능에 따라 분류하고 있는데, 크게 나누어 Bridge형 converter와 Cycloconverter로 나누는데, 여기서는 이중 3상 Bridge형 Thyristor Inverter에 대한 전력변환과정을 Vector해석법에 의하여 그 개요를 설명하고, 여기에 현재 가장 효율적 switching방식이라 보고 있는 펼스폭변조환류게이트방식(Pulsewidth modulation commutation gating system)을 적용하였을 때의 효과를 첨가 설명코자 한다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1994년도 하계학술대회 논문집 A
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• pp.237-239
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• 1994

The MOS-controlled thyristor(MCT) is a new power semi-conductor device that combines four layers thyristor structure presenting regenerative action and MOS-gate providing controlled turn-on and turn-off. The MCT has very fast switching speed owing to voltage controlled MOS-gate, and very low on-state voltage drop resulting from regenerative action of four layers thyristor structure. In addition, because of a higher dv/dt rating and di/dt rating, gate drive circuit and snubber circuit can be simpler comparing to other power switching devices. So recently much interest and endeavor is being applied to develop the performance and ratings of the MCT. This paper describes the switching characteristic of the MCT for its practical applications and presents a model for PSPICE circuit simulation. The model for PSPICE circuit simulation is compared to the experimental result using MCTV75P60F1 made by Harris co..

• 전기의세계
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• 제28권7호
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• pp.49-55
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• 1979

본논문은 Thyristor를 이용하여 교류회로의 고장전류를 차단하는 기구에 대한 것이다. 즉 Thyristor 한류차단회로를 설정하고 게이트제어회로 과전류검출기를 설계하고 동작과정을 확인하였다. 결과에 있어서 (1) 고속차단이 가능하다(60Hz 교류에서 4ms이내) (2) 이 방식에 의하면 차단용량을 감소시킬 수 있다. (3) 적은 신호로 지체없이 동작한다. (4) 기계적부분이 없으므로 반영구시 수명을 가진다.

• 전자공학회논문지D
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• 제36D권6호
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• pp.35-43
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• 1999

본 논문에서는 자유 공간 광 연결 구도에 적합한 새로운 구조의 광 thyristor를 제안하고, 이 소자의 성능을 기존의 광 thyristor와 비교 평가하였다. 제안된 광 thyristor는 얇은 가운데 층들을 갖는 완전 공핍 광 thyristor로서 빠른 스위칭 속도와 향상된 광 반응성을 위하여 다중 양자 우물(multiple quantum wells)과 하부 거울층(bottom mirror)을 이용하였다. 기존 광 thyristor와의 성능 비교를 위한 모의실험은 전류 중심(current oriented) 연결 접합 모델(coupled junction model)과 박막층의 특성 행렬(thin film characteristic matrix), 그리고 van Roosbroeck-Shockley relation을 이용하였다. 모의 실험을 통하여 소자의 구성 물질, 두께, 불순물 농도등의 물리적 인자들이 같은 경우, 기존의 광 thyristor에 비하여 제안된 광 thyristor의 스위칭 에너지가 0.43 배 줄고, 발광 효율은 1.76 배 증가하며, 연동 동작(cascadable operation)시 bit-rate는 1.61 배 증가함을 알 수 있었다.

• 전력전자학회논문지
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• 제4권4호
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• pp.368-376
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• 1999

본 논문은, 대표적인 FACTS기기중의 하나인 싸이리스터제어 병렬보상기의 특성 연구를 수행한다. 이를 위하여 푸리에 공간에서 전력조류 조건을 만족하는 싸이리스터 점호각을 수치해석적으로 구하고, 그 계산 결과를 이용하여 정상상태 및 고조파 특성을 해석하였다. 그리고, Poincare Mapping 이론을 이용한 스위칭 주파수영역에서 안정도 해석과 EMTP 시뮬레이션을 이용한 시평면상에서 해석결과의 검증 및 여러 운전점에서 과도응답특성의 비교연구를 수행하였다.

• 전력전자학회:학술대회논문집
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• 전력전자학회 1999년도 전력전자학술대회 논문집
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• pp.680-683
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• 1999

A thyristor controlled shunt compensator, which is installed in the middle of the transmission line is adopted for controlling real power flow in a simple power transmission system. By means on the Fourier series representation of the thyristor switching action and the system parameters, the thyristor current equations are derived, which transmit the required real power of the simple power transmission system and inform the thyristor firing angle, the thyristor conduction angle, the power flows and the harmonic characteristics EMTP simulations at the various operating points show the dynamic characteristics of the thyristor controlled shunt compensator and correspond to the results calculated with the Fourier series representation.

• 한국전기전자재료학회논문지
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• 제17권12호
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• pp.1264-1270
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• 2004

A fast switching thyristor with a superior trade-off property between the on-state voltage drop and the turn-off time could be fabricated by the proton irradiation method. After making symmetric thyristor dies with a voltage rating of 1,600 V from 350 $\mu$m thickness of 60 $\Omega$ㆍcm NTD-Si wafer and 200 $\mu$m width of n-base drift layer, the local carrier lifetime control by the proton irradiation was performed with help of the HI-13 tandem accelerator in China. The thyristor samples irradiated with 4.7 MeV proton beam showed a superior trade-off relationship of $V_{TM}$ = 1.55 V and $t_{q}$ = 15 $\mu$s attributed to a very narrow layer of short carrier lifetime(～1 $\mu$s) in the middle of its n-base drift region. To explain the small increase of $V_{TM}$ , we will introduce the effect of carrier compensation at the low carrier lifetime region by the diffusion current.ffusion current.t.

• 전기의세계
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• 제28권12호
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• pp.41-45
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• 1979

Improvement of power factor is achieved by reactive-current compensation, connecting power condenser to the circuit. This paper describes a method of reactive-current compensation, employing thyristor switching of capacitor banks without any breaker. This method reduces supply transients to the minimum by means of connecting condenser, because thyristor is triggered at zero point in condenser current. The reactive current detection and the experimental system to trigger thyristor at appropriate moment are given. IThe results show the fast reactive-current compensation on the condition of minimum transient.