• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.122-122
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• 2010

A Static Induction Thyristor (SI-Thyristor) has a great potential as power semiconductor switch for pulsed power or high voltage applications with fast turn-on switching time and high switching stress endurance (di/dt, dV/dt). However, due to direct commutation between gate driver and SI-Thyristor, it is difficult to design optimal gate driver at the aspect of impedance matching for fast gate current driving into internal SI-Thyristor. Thus, to penetrate fast positive gate current into steady off state of the SI-Thyristor, it is proposed and proceeded the internal impedance calculation of the SI-Thyristor at steady off state with the gate driver while switching conditions that are indicated applied gate voltage, $V_{GK}$ and applied high voltage across anode and cathode, $V_{AK}$.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.33 no.4
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• pp.127-133
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• 1984

In this paper the performance of a variable-phase thyristor motor combined with a phase splitter and a single-phase tapped induction motor is investigated. The phase splitter consists of a bridge type thyristor switching circuit. The regulating power flow of the phase splitter is obtained from the switching phase difference of thyristor switching sequences. The proper switching performance improves the torque-speed-characteristics of the motor and its operation efficiency. We simplify the motor system th using the tapped windng reactances of the motor as the complementary element of the thyristor phase splitter. We discussed the practicality of this motor system through the analysis of simulation result and the voltage and the current wave forms obtained froms obtained from the experiment.

• 전기의세계
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• v.23 no.4
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• pp.32-35
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• 1974

Thyristor inverter의 유형은 Switching기능에 따라 분류하고 있는데, 크게 나누어 Bridge형 converter와 Cycloconverter로 나누는데, 여기서는 이중 3상 Bridge형 Thyristor Inverter에 대한 전력변환과정을 Vector해석법에 의하여 그 개요를 설명하고, 여기에 현재 가장 효율적 switching방식이라 보고 있는 펼스폭변조환류게이트방식(Pulsewidth modulation commutation gating system)을 적용하였을 때의 효과를 첨가 설명코자 한다.

• Proceedings of the KIEE Conference
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• 1994.07a
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• pp.237-239
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• 1994

The MOS-controlled thyristor(MCT) is a new power semi-conductor device that combines four layers thyristor structure presenting regenerative action and MOS-gate providing controlled turn-on and turn-off. The MCT has very fast switching speed owing to voltage controlled MOS-gate, and very low on-state voltage drop resulting from regenerative action of four layers thyristor structure. In addition, because of a higher dv/dt rating and di/dt rating, gate drive circuit and snubber circuit can be simpler comparing to other power switching devices. So recently much interest and endeavor is being applied to develop the performance and ratings of the MCT. This paper describes the switching characteristic of the MCT for its practical applications and presents a model for PSPICE circuit simulation. The model for PSPICE circuit simulation is compared to the experimental result using MCTV75P60F1 made by Harris co..

• 전기의세계
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• v.28 no.7
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• pp.49-55
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• 1979

This paper describes the mechanisms which breaks A.C. over-current protection in low voltage load. For the high speed over-current protection, it consists of thyristor switching circuit by forced commutation, IC logic gate controlled circuit and over-current detector with reed switch. Under various duty conditions, breacker was carried out several experiments and discussions. The results are as follows; (1) over-current cut off is possible within a quarter cycle (4ms at 60Hz) and clear is at least ten times faster than its electromechanical equivalent. (2) as the forced commutation thyristor circuit breaker has capability of high speed break, equivalent surgy current capacity of switching thyristor is increased more than twenty times of its rated current. (3) breaker using solid state dose not produce any harmful arc during switching period. Therefore the breaker above described may be considered an effective over-current protector for soli state power devices in industrial applications.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.6
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• pp.35-43
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• 1999

We propose and analyze novel optical thyristor which can be used in free-space optical interconnection(FSOI). Novel optical thyristors are fully depleted optical thyristors(DOTs) using bottom mirror and/or multiple quantum wells (MQW), thereby its switching characteristics can be improved significantly. We obtain switching characteristics using coupled junction model associated with current oriented method. Emission characteristics of the DOT are obtained using thin film characteristic matrix and van Roosbroeck-Shockley relation. Compared to the performance using conventional DOT, the optical switching energy is decreased by a factor of 0.43 and the bit-rate is increased by a factor of 1.61 when the DOT with MQW and bottom mirror is employed for FSOI.

• The Transactions of the Korean Institute of Power Electronics
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• v.4 no.4
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• pp.368-376
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• 1999

This paper studies the operational characteristics of thyristor controlled shunt compensator in a simple power t transmission system. With Fourier series representation of the thyristor switching action and the system parameters, t the thyristor current equations are derived, which transmit the required real power of the simple power transmission s system. Bisection algorithm is used to solve the thyristor current equations, which informs the thyristor firing an밍e, t the thyristor conduction an밍e, the power flows and the harmonic characteristics. The stability analysis is performed w with the theory of Poincare mapping for the nonlinear discrete periodic dynamic system. EMTP simulations at the v various operating points show the transient characteristics of the thyristor controlled shunt compensator and C correspond to the results calculated with Fourier series representation and the stability analysis.

• Proceedings of the KIPE Conference
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• 1999.07a
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• pp.680-683
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• 1999

A thyristor controlled shunt compensator, which is installed in the middle of the transmission line is adopted for controlling real power flow in a simple power transmission system. By means on the Fourier series representation of the thyristor switching action and the system parameters, the thyristor current equations are derived, which transmit the required real power of the simple power transmission system and inform the thyristor firing angle, the thyristor conduction angle, the power flows and the harmonic characteristics EMTP simulations at the various operating points show the dynamic characteristics of the thyristor controlled shunt compensator and correspond to the results calculated with the Fourier series representation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.12
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• pp.1264-1270
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• 2004

A fast switching thyristor with a superior trade-off property between the on-state voltage drop and the turn-off time could be fabricated by the proton irradiation method. After making symmetric thyristor dies with a voltage rating of 1,600 V from 350 $\mu$m thickness of 60 $\Omega$ㆍcm NTD-Si wafer and 200 $\mu$m width of n-base drift layer, the local carrier lifetime control by the proton irradiation was performed with help of the HI-13 tandem accelerator in China. The thyristor samples irradiated with 4.7 MeV proton beam showed a superior trade-off relationship of $V_{TM}$ = 1.55 V and $t_{q}$ = 15 $\mu$s attributed to a very narrow layer of short carrier lifetime(～1 $\mu$s) in the middle of its n-base drift region. To explain the small increase of $V_{TM}$ , we will introduce the effect of carrier compensation at the low carrier lifetime region by the diffusion current.ffusion current.t.

• 전기의세계
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• v.28 no.12
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• pp.41-45
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• 1979

Improvement of power factor is achieved by reactive-current compensation, connecting power condenser to the circuit. This paper describes a method of reactive-current compensation, employing thyristor switching of capacitor banks without any breaker. This method reduces supply transients to the minimum by means of connecting condenser, because thyristor is triggered at zero point in condenser current. The reactive current detection and the experimental system to trigger thyristor at appropriate moment are given. IThe results show the fast reactive-current compensation on the condition of minimum transient.