• Title/Summary/Keyword: through-and-through defect

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Transmesenteric Hernia (경장간막 탈장)

  • Kim, Seong-Chul;Kim, In-Koo
    • Advances in pediatric surgery
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    • v.2 no.2
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    • pp.148-150
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    • 1996
  • Transmesenteric hernia, a type of internal hernias, is a rare cause of intestinal obstruction. This intraperitoneal hernia has no sac and is formed by protrusion of a loop of bowel through an aperture in the mesentery. Incarceration leads to intestinal obstruction and subsequently, strangulation and gangrene of varing lengths of intestine. This is a case report of 4-year-old girl with transmesenteric herniation of the terminal ileum through a defect in its own mesentery. Strangulation of the affected bowel necessitates resection and primary anastomosis with repair of mesenteric defect. The postoperative course was uneventful. Acute intestinal obstruction in the absence of an external hernia and with no history of a previous surgical procedure suggests the possibility of an internal hernia, especially if the patient has a history of chronic intermittent abdominal distress.

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Isolated Ventricular Inversion and Anatomically Corrected Malposition of the Great Arteries Associated with Right Juxtaposition of Left Atrial Appendage: A case of Successful surgical repair

  • 이정렬
    • Journal of Chest Surgery
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    • v.23 no.6
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    • pp.1280-1287
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    • 1990
  • A seven month old female infant with isolated ventricular inversion and anatomically corrected malposition of the great arteries in situs solitus, associated with ventricular septal defect, patent ductus arteriosus, right-sided juxtaposition of left atrial appendage, is reported. The patient showed usual atrial arrangement with somewhat superoinferior relation, a discordant atrioventricular connection, and a concordant ventriculoarterial connection with aorta in the right-sided position. A normal sized left atrium was connected to the left superiorly positioned morphologic right ventricle through a tricuspid valve, which crossed the left ventricular outflow tract anteriorly. Well developed bilateral[subaortic and sub-pulmonary]conus was documented at operative field. successful surgical repair was done by performing the Senning procedure and by closing the ventricular sepal defect with a patch through the right ventriculotomy. The infant’s postoperative course was uneventful with normal sinus rhythm. Postoperative cardiac catheterization revealed no hemodynamic obstruction or residual shunt.

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Ruptured Sinus of Valsalva Aneurysm - A Case Report - (대동맥동 동맥류 파열 - 1례 보고 -)

  • Kim, Seong-Su;Jo, Jung-Gu;Kim, Gong-Su
    • Journal of Chest Surgery
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    • v.22 no.4
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    • pp.687-692
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    • 1989
  • Aneurysm of the sinus of Valsalva is an uncommon cardiac anomaly, usually congenital in origin, which may occur as an isolated defect or in conjunction with other cardiac malformation. This report is a case of a ruptured sinus of Valsalva aneurysm with ventricular septal defect in a 18-year-old female patient who complained progressive exertional dyspnea. She underwent operative management using total cardiopulmonary bypass. The fistula originated from the right coronary sinus and ruptured into the right ventricle and coexistent lesion was supracristal ventricular septal defect. The repair was done through aortic and right ventricular approach. The ruptured sinus of Valsalva was closed with pledget suture and the ventricular septal defect was closed with patch. The postoperative result was good.

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Tetralogy of Fallot with Subpulmonary Ventricular Septal Defect: A Case Report (Subpulmonary VSD 를 동반한 활로 4증: 수술 치험 1례 보고)

  • 우종수
    • Journal of Chest Surgery
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    • v.11 no.2
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    • pp.175-180
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    • 1978
  • A rare form of tetralogy of Fallot, in which large ventricular septal defect was located at subpulmonary position rather than beneath a well developed crista supraventricularis was operated in this Department. This case satisfied the criteria for the diagnosis of tetralogy of Fallot, having large ventricular septal defect beneath the aortic valve with overriding of aorta, pulmonary stenosis and right ventricular hypeFtrophy. The operation was done through a median sternotomy using cardiopulmonary bypass. A vertical right ventriculotomy was extended to the pulmonary valve ring. Pulmonary and aortic valve were adjacent to each other, in contrast to the situation of classic tetralogy of Fallot. Pulmonary valvulotomy was done and ventricular septal defect was closed. with Teflon, and right ventricular outflow tract was reconstructed with woven Dacron covered by pericardial patch after minimal resection of septal band. The post-operatiove courses was uneventful except wound infection. The patient was discharged 15 days after open heart surgery.

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Effects of Nitrogen Defect on Magnetism of Cu-doped InN: First-principles Calculations

  • Kang, Byung-Sub;Chae, Kwang-Pyo;Lee, Haeng-Ki
    • Journal of Magnetics
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    • v.18 no.2
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    • pp.81-85
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    • 2013
  • We investigate the electronic and magnetic properties in Cu-doped InN with the N vacancy ($V_N$) from first principles calculations. There is the long-range ferromagnetic order between two Cu atoms, attributed to the hole-mediated double exchange through the strong p-d interaction between the Cu atom and neighboring N atom. The system of $V_N$ defect in Cu-doped InN has the lowest formation energy. Due to the hybridization between the Cu-3d and $V_N$ states, the spin-polarization on the Cu atoms in the InN lattice is reduced by $V_N$ defect. So, it shows a weak ferromagnetic behavior.

Electrical Characteristics of Oxide Layer Due to High Temperature Diffusion Process (고온 확산공정에 따른 산화막의 전기적 특성)

  • 홍능표;홍진웅
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.52 no.10
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    • pp.451-457
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    • 2003
  • The silicon wafer is stable status at room temperature, but it is weak at high temperatures which is necessary for it to be fabricated into a power semiconductor device. During thermal diffusion processing, a high temperature produces a variety thermal stress to the wafer, resulting in device failure mode which can cause unwanted oxide charge or some defect. This disrupts the silicon crystal structure and permanently degrades the electrical and physical characteristics of the wafer. In this paper, the electrical characteristics of a single oxide layer due to high temperature diffusion process, wafer resistivity and thickness of polyback was researched. The oxide quality was examined through capacitance-voltage characteristics, defect density and BMD(Bulk Micro Defect) density. It will describe the capacitance-voltage characteristics of the single oxide layer by semiconductor process and device simulation.

Characteristics Magnetic Flux Leakage According to the Position of Hall Sensor (Hall 센서 위치에 따른 MFL 특성 고찰)

  • Kim, Sean;Lee, Hyang-Beom
    • Proceedings of the KIEE Conference
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    • 2001.07b
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    • pp.819-821
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    • 2001
  • This paper describes a characteristics of MFL according to the position of Hall sensor Magnetic Flux Leakage(MFL) Method is used to detect surface defect in ferromagnetic plate. A plate has a surface defect and magnetizing equipment are producted to perform Non-Destructive Testing(NDT) using MFL. The SM 45C carbon steel plate is adopted to this experiment. there is a artifical defect with a twice of thickness and a half of depth of plate. Magnetizing equipment is composed of yoke made by layer-built of silicon sheet steel, NdFeB magnetic and iron brushes. Detecting defect is performed by MFL NDT using Hall sensor. It is shown that magnetic flux detected by Hall sensor is affected according to the position of Hall sensor through MFL experiment and numerical analysis.

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Flaw Detection of Petrochemical Pipes using Torsional Waves (비틀림파를 이용한 석유화학 파이프의 결함탐지)

  • Park, K.J.;Kang, W.S.;Kang, D.J.
    • Journal of Power System Engineering
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    • v.14 no.3
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    • pp.46-51
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    • 2010
  • A torsional guided wave was applied to detect a defect in petrochemical pipes. Phase and group velocity dispersion curves for the longitudinal and torsional modes of the inspected pipe were presented for the theoretical analysis. It was found through mode shape analysis that there was mode conversion when torsional wave is incident at an asymmetric defect. An artificial notch was fabricated in the pipe and the detectability was examined from the distance 2m of the end of the pipe by using magnetostrictive sensors. The relativities between the amplitude of the reflected signal and the size of the defect was examined. It was shown that the T(0,1) mode could be used for the long range inspection for the petrochemical pipes.

Reconstruction of Soft Tissue Defects over the Achilles Tendon Region Using Anterolateral Thigh Free Flap (전외측 대퇴 유리 피판을 이용한 아킬레스건 부위 연부조직 결손의 재건)

  • Kang, Min-Hyuk;Hong, Joon-Pio
    • Archives of Reconstructive Microsurgery
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    • v.11 no.2
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    • pp.162-166
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    • 2002
  • The anterolateral thigh free flap was first reported by Song et al. in 1984 as a fasciocutaneous flap based on septocutaneous or musculocutaneous perforators of the lateral femoral circumflex vessel. It only becomes popular recently through confirmation of additional anatomy. For reconstruction of Achilles area defect, a thin flap is required to improve aesthetic and functional results. The anterolateral thigh free flap is relatively thin and can provide large skin area. It can be a useful option for reconstruction of Achilles area defect based on these characters. Since March 2002, we have successfully transferred 4 anterolateral thigh free flaps to reconstruct Achilles area defects and have attained good range of motion in this region. The anterolateral thigh free flap has many advantages and can be used for the reconstruction of Achilles tendon area defect.

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Identifying and quantitating defects on chemical vapor deposition grown graphene layers by selected electrochemical deposition of Au nanoparticles

  • So, Hye-Mi;Mun, Jeong-Hun;Bang, Gyeong-Sook;Kim, Taek-Yong;Cho, Byung-Jin;Ahn, Chi-Won
    • Carbon letters
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    • v.13 no.1
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    • pp.56-59
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    • 2012
  • The defect sites on chemical vapor deposition grown graphene are investigated through the selective electrochemical deposition (SED) of Au nanoparticles. For SED of Au nanoparticles, an engineered potential pulse is applied to the working electrode versus the reference electrode, thereby highlighting the defect sites, which are more reactive relative to the pristine surface. Most defect sites decorated by Au nanoparticles are situated along the Cu grain boundaries, implying that the origin of the defects lies in the synthesis of uneven graphene layers on the rough Cu surface.