• 한국표면공학회지
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• 제50권6호
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• pp.523-530
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• 2017

In this study, we developed the h-BN interphase for ceramic matrix composites (CMCs) through a wet chemical coating method, which has excellent price competitiveness and is a simple process as a departure from the existing high cost chemical vapor deposition method. The optimum condition for nitriding an h-BN interphase using boric acid and urea as precursors were derived, and the h-BN interphase coating through a wet method on a carbon preform of 2.5 D was conducted to apply the optimum conditions to the CMCs. In order to control the coating property via the wet coating method, four parameters were investigated such as dipping time of the specimen in the precursor solution, the ratio of boric acid and urea in the precursor, the concentration of solution where the precursor was dissolved, and the cycle of dipping and dry process. The CMCs was fabricated through polymer impregnation and pyrolysis (PIP) processes and a three-point flexural strength test was conducted to verify the role of the coated h-BN interphase.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.314-314
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• 2010

The SiC-$ZrB_2$ composites were fabricated by combining 40vol.% of Zirconium Diboride(hereafter, $ZrB_2$) powders with Silicon Carbide(hereafter, SiC) matrix. TheSiC+40vol.%$ZrB_2$ composites were manufactured through Spark Plasma Sintering(hereafter, SPS) under argon atmosphere, uniaxial pressure of 50MPa, heating rate of $100^{\circ}C$/min, sintering temperature of $1,500^{\circ}C$ and holding time of 5min. But one on/off pulse sequence(one pulse time: 2.78ms) is 10:9(hereafter, SZ10), and the other is 48:8(hereafter, SZ48). The physical and mechanical properties of the SZ12 and SZ48 were examined. Reactions between $\beta$-SiC and $ZrB_2$ were not observed via X-Ray Diffraction(hereafter, XRD) analysis. The apparent porosity of the SZ10 and SZ48 composites were 9.7455 and 12.2766%, respectively. The SZ10 composite, 593.87MPa, had higher flexural strength than the SZ48 composite, 324.78MPa, at room temperature. The electrical properties of the SiC-$ZrB_2$ composites had Positive Temperature Coefficient Resistance(hereafter, PTCR).

• Bulletin of the Korean Chemical Society
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• 제21권8호
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• pp.793-796
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• 2000

In the neat flow vacuum pyrolysis of 2-methoxy-2-(o-N,N+dimethylaminomethyl)phenyl-3-trimethylsilyl-5,5-dime-thyl-2-silahexane (4) at $600^{\circ}C$ and its static thermolysis at $350^{\circ}C23-benzo-5-aza-1-silacyclohexane$, (5) has been obtained in97% and 46％ y ields, respectively. Product 5 might have been formed via an intramolecular rearrangement invoIving a zwitterionic species generated from the pentacoordinated silene Si-atom. From trapping experiments with an excess of MeOH, we have obtained 2-(o-N,N-dimethylaminomethyl)phenyl-5,5-dimethyl-2-trimethylsiloxy-2-silahexane (6) and 2-(o-N,N-dimethylaminomethyl)phenyl-2-methoxy-5,5-dime-thyl-2-silahexane (7) formed via an intermolecular protodesilylation reaction rather than through trapped prod-ucts of the silene.

• Parasites, Hosts and Diseases
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• 제50권1호
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• pp.1-6
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• 2012

$Toxoplasma$ $gondii$ penetrates all kinds of nucleated eukaryotic cells but modulates host cells differently for its intracellular survival. In a previous study, we found out that serine protease inhibitors B3 and B4 (SERPIN B3/B4 because of their very high homology) were significantly induced in THP-1-derived macrophages infected with $T.$ $gondii$ through activation of STAT6. In this study, to evaluate the effects of the induced SERPIN B3/B4 on the apoptosis of $T.$ $gondii$-infected THP-1 cells, we designed and tested various small interfering (si-) RNAs of SERPIN B3 or B4 in staurosporine-induced apoptosis of THP-1 cells. Anti-apoptotic characteristics of THP-1 cells after infection with $T.$ $gondii$ disappeared when SERPIN B3/B4 were knock-downed with gene specific si-RNAs transfected into THP-1 cells as detected by the cleaved caspase 3, poly-ADP ribose polymerase and DNA fragmentation. This anti-apoptotic effect was confirmed in SERPIN B3/B4 overexpressed HeLa cells. We also investigated whether inhibition of STAT6 affects the function of SERPIN B3/B4, and vice versa. Inhibition of SERPIN B3/B4 did not influence STAT6 expression but SERPIN B3/B4 expression was inhibited by STAT6 si-RNA transfection, which confirmed that SERPIN B3/B4 was induced under the control of STAT6 activation. These results suggest that $T.$ $gondii$ induces SERPIN B3/B4 expression via STAT6 activation to inhibit the apoptosis of infected THP-1 cells for longer survival of the intracellular parasites themselves.

• 대한금속재료학회지
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• 제48권7호
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• pp.667-673
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• 2010

Copper filling into TSV (through-silicon-via) and reduction of the filling time for the three dimensional chip stacking were investigated in this study. A Si wafer with straight vias - $30\;{\mu}m$ in diameter and $60\;{\mu}m$ in depth with $200\;{\mu}m$ pitch - where the vias were drilled by DRIE (Deep Reactive Ion Etching) process, was prepared as a substrate. $SiO_2$, Ti and Au layers were coated as functional layers on the via wall. In order to reduce the time required complete the Cu filling into the TSV, the PPR (periodic pulse reverse) wave current was applied to the cathode of a Si chip during electroplating, and the PR (pulse-reverse) wave current was also applied for a comparison. The experimental results showed 100% filling rate into the TSV in one hour was achieved by the PPR electroplating process. At the interface between the Cu filling and Ti/ Au functional layers, no defect, such as a void, was found. Meanwhile, the electroplating by the PR current showed maximum 43% filling ratio into the TSV in an hour. The applied PPR wave form was confirmed to be effective to fill the TSV in a short time.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제51권6호
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• pp.229-235
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• 2002

This paper presents the fabrication of polycrystalline thin film transistor(TFT) using sequential lateral solidification(SLS) of amorphous silicon. The fabricated SLS TFT showed high Performance suitable for active matrix liquid crystal display(AMLCD). The SLS process involves (1) a complete melting of selected area via irradiation through a patterned mask, and (2) a precisely controlled pulse translation of the sample with respect to the mask over a distance shorter than the super lateral growth(SLG) distance so that lateral growth extended over a number of iterative steps. The SLS experiment was performed with 550$\AA$ a-Si using 308nm XeCl laser having $2\mu\textrm{m}$ width. Irradiated laser energy density is 310mJ/$\textrm{cm}^2$ and pulse duration time was 25ns. The translation distance was 0.6$\mu$m/pulse, 0.8$\mu$m/pulse respectively. As a result, a directly solidified grain was obtained. Thin film transistors (TFTs) were fabricated on the poly-Si film made by SLS process. The characteristics of fabricated SLS p -type poly-Si TFT device with 2$\mu\textrm{m}$ channel width and 2$\mu\textrm{m}$ channel length showed the mobility of 115.5$\textrm{cm}^2$/V.s, the threshold voltage of -1.78V, subthreshold slope of 0.29V/dec, $I_{off}$ current of 7$\times$10$^{-l4}$A at $V_{DS}$ =-0.1V and $I_{on}$ / $I_{off}$ ratio of 2.4$\times$10$^{7}$ at $V_{DS}$ =-0.1V. As a result, SLS TFT showed superior characteristics to conventional poly-Si TFTs with identical geometry.y.y.y.

• International Journal of Internet, Broadcasting and Communication
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• 제12권2호
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• pp.30-36
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• 2020

We demonstrated a successful fabrication of 4" Gallium Nitride (GaN)/Diamond High Electron Mobility Transistors (HEMTs) incorporated with Inner Slot Via Hole process. We made in manufacturing technology of 4" GaN/Diamond HEMT wafers in a compound semiconductor foundry since reported [1]. Wafer thickness uniformity and wafer flatness of starting GaN/Diamond wafers have improved greatly, which contributed to improved processing yield. By optimizing Laser drilling techniques, we successfully demonstrated a through-substrate-via process, which is last hurdle in GaN/Diamond manufacturing technology. To fully exploit Diamond's superior thermal property for GaN HEMT devices, we include Aluminum Nitride (AlN) barrier in epitaxial layer structure, in addition to conventional Aluminum Gallium Nitride (AlGaN) barrier layer. The current collapse revealed very stable up to Vds = 90 V. The trapping behaviors were measured Emission Microscope (EMMI). The traps are located in interface between Silicon Nitride (SiN) passivation layer and GaN cap layer.

• 마이크로전자및패키징학회지
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• 제30권3호
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• pp.11-19
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• 2023

최근 Chat GPT와 같은 인공지능 (Artificial Intelligence, AI) 기술의 급격한 발전에 따라 AI 반도체의 중요성이 강조되고 있다. AI 기술은 빅데이터 처리, 딥 러닝, 알고리즘 등의 요구사항으로 인해 대용량 데이터를 빠르게 처리할 수 있는 능력을 필요로 한다. 그러나 AI 반도체는 대규모 데이터를 처리하는 과정에서 과도한 전력 소비와 데이터 병목현상 문제가 발생한다. 반도체 전공정의 초미세공정이 물리적 한계에 도달함에 따라, AI 반도체의 연산을 위한 최신 패키징 기술이 요구되는 추세이다. 본 고에서는 AI 반도체에 적용가능한 인터포저, TSV, 범핑, Chiplet, 하이브리드 본딩 패키징 기술에 대해서 기술하였다. 이러한 기술들은 AI 반도체의 전력 효율과 연산 속도를 향상시키는데 기여할 것으로 기대된다.

• 한국표면공학회지
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• 제50권5호
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• pp.315-321
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• 2017

Antireflective pyramid arrays can be readily obtained via anisotropic etching in alkaline solution (KOH, NaOH), which is widely used in crystalline-Si (c-Si) solar cells. The periodic inverted pyramid arrays show even lower light reflectivity because of their superior light-trapping characteristics. Since this inverted pyramidal structures are mostly achieved using very complex techniques such as photolithograpy and laser processes requiring extra costs, here, we demonstrate the Cu-nanoparticle assisted chemical etching processes to make the inverted pyramidal arrays without the need of photolithography. We have mainly controlled the concentration of $Cu(NO_3)_2$, HF, $H_2O_2$ and temperature as well as time factors that affecting the reaction. Optimal inverted pyramid structure was obtained through reaction parameters control. The reflectance of inverted pyramid arrays showed < 10% over 400 to 1100 nm wavelength range while showing 15~20% in random pyramid arrays.

• Journal of Electrical Engineering and Technology
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• 제5권2호
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• pp.342-351
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• 2010

The SiC-$ZrB_2$ composites were fabricated by combining 30, 35, 40, 45 and 50 vol. % of zirconium diboride ($ZrB_2$) powders with silicon carbide (SiC) matrix. The SiC-$ZrB_2$ composites and the sintered compacts were produced through spark plasma sintering (SPS) under argon atmosphere, and its physical, electrical, and mechanical properties were examined. Also, the thermal image analysis of the SiC-$ZrB_2$ composites was examined. Reactions between $\beta$-SiC and $ZrB_2$ were not observed via x-ray diffraction (XRD) analysis. The apparent porosity of the SiC+30vol.%$ZrB_2$, SiC+35vol.%$ZrB_2$, SiC+40vol.%$ZrB_2$, SiC+45vol.%$ZrB_2$ and SiC+50vol.%$ZrB_2$ composites were 7.2546, 0.8920, 0.6038, 1.0981, and 10.0108%, respectively. The XRD phase analysis of the sintered compacts demonstrated a high phase of SiC and $ZrB_2$. Among the $SiC+ZrB_2$ composites, the SiC+50vol.%$ZrB_2$ composite had the lowest flexural strength, 290.54MPa, the other composites had more than 980MPa flexural strength except the SiC+30vol.%$ZrB_2$ composite; the SiC+40vol.%$ZrB_2$ composite had the highest flexural strength, 1011.34MPa, at room temperature. The electrical properties of the SiC-$ZrB_2$ composites had positive temperature coefficient resistance (PTCR). The V-I characteristics of the SiC-$ZrB_2$ composites had a linear shape in the temperature range from room to $500^{\circ}C$. The electrical resistivities of the SiC+30vol.%$ZrB_2$, SiC+35vol.%$ZrB_2$, SiC+40vol.%$ZrB_2$ SiC+45vol.%$ZrB_2$ and SiC+50vol.%$ZrB_2$ composites were $4.573\times10^{-3}$, $1.554\times10^{-3}$, $9.365\times10^{-4}$, $6.999\times10^{-4}$, and $6.069\times10^{-4}\Omega{\cdot}cm$, respectively, at room temperature, and their resistance temperature coefficients were $1.896\times10^{-3}$, $3.064\times10^{-3}$, $3.169\times10^{-3}$, $3.097\times10^{-3}$, and $3.418\times10^{-3}/^{\circ}C$ in the temperature range from room to $500^{\circ}C$, respectively. Therefore, it is considered that among the sintered compacts the SiC+35vol.%$ZrB_2$, SiC+40vol.%$ZrB_2$ and SiC+45vol.%$ZrB_2$ composites containing the most outstanding mechanical properties as well as PTCR and V-I characteristics can be used as an energy friendly ceramic heater or ohmic-contact electrode material through SPS.