• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.166-166
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• 2010

Recently, TFTs based on amorphous oxide semiconductors (AOSs) such as ZnO, InZnO, ZnSnO, GaZnO, TiOx, InGaZnO(IGZO), SnGaZnO, etc. have been attracting a grate deal of attention as potential alternatives to existing TFT technology to meet emerging technological demands where Si-based or organic electronics cannot provide a solution. Since, in 2003, Masuda et al. and Nomura et al. have reported on transparent TFTs using ZnO and IGZO as active layers, respectively, much efforts have been devoted to develop oxide TFTs using aforementioned amorphous oxide semiconductors as their active layers. In this thesis, I report on the performance of thin-film transistors using amorphous indium gallium zinc oxides for an active channel layer at room temperature. $SiO_2$ was employed as the gate dielectric oxide. The amorphous indium gallium zinc oxides were deposited by RF magnetron sputtering. The carrier concentration of amorphous indium gallium zinc oxide was controlled by oxygen pressure in the sputtering ambient. Devices are realized that display a threshold voltage of 1.5V and an on/off ration of > $10^9$ operated as an n-type enhancement mode with saturation mobility with $9.06\;cm^2/V{\cdot}s$. The devices show optical transmittance above 80% in the visible range. In conclusion, the fabrication and characterization of thin-film transistors using amorphous indium gallium zinc oxides for an active channel layer were reported. The operation of the devices was an n-type enhancement mode with good saturation characteristics.

• Proceedings of the Korea Water Resources Association Conference
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• 2019.05a
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• pp.407-407
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• 2019

According to Asian Development Bank report Pakistan is among water scarce countries. Climate scenario on the basis IPCC fifth assessment report (AR5) revealed that annual mean temperature of Pakistan from year 2010-2019 was $17C^o$ which will rise up to $21C^o$ at the end of this century, similarly almost 10% decrease of annual rainfall is expected at the end of the century. It is a changing task in underdeveloped countries like Pakistan to meet the water demands of rapidly increasing population in a changing climate. While many studies have tackled scarcity and stream flow forecasting of the Upper Indus Basin (UIB) Pakistan, very few of them are related to socio-economic and climate change impact on sustainable water management of UIB. This study investigates the pattern of current and future surface water availability for various demand sites (e.g. domestic, agriculture and industrial) under different socio-economic and climate change scenarios in Upper Indus Basin (UIB) Pakistan for a period of 2010 to 2050. A state-of-the-art planning tool Water Evaluation and Planning (WEAP) is used to analyze the dynamics of current and future water demand. The stream flow data of five sub catchment (Astore, Gilgit, Hunza, Shigar and Shoyke) and entire UIB were calibrated and validated for the year of 2006 to 2011 using WEAP. The Nash Sutcliffe coefficient and coefficient of determination is achieved ranging from 0.63 to 0.92. The results indicate that unmet water demand is likely to increase severe threshold and the external driving forces e.g. socio-economic and climate change will create a gap between supply and demand of water.

• Proceedings of the Korean Society of Sericultural Science Conference
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• 1997.06a
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• pp.51-72
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• 1997

Diapause hormone (DH) is a neuropeptide hormone which is secreted from the suboesophageal ganglion (SG) and is responsible for induction of embryonic diapause of the silkworm, Bombyx mori. DH is isolated from SGs and determined to be a 24 amino acid peptide amide. The cDNA encodes the polyprotein precursor from which DH, pheromone biosynthesis activating neuropeptide (PBAN) and three other neuropeptides are released and become matured. The C-terminal FXPRL-NH2 sequence of DH is essential but not sufficient for expression of full activity. Recently, we have isolated a unique hydrohobic peptide (VAP peptide) with a slight diapause egg induceing activity from organic solvent extracts of the male adult heads of the silkworm. The VAP peptide itself has no diapause inducing activity, but enhances DH activity through reducing ED50 value and the threshold concentration of DH. The DH-PBAN gene is composed of 6 exons interrupted by 5 introns and is expressed in 12 neurosecretory cells of the SG. The incubation of eggs at 25$^{\circ}C$, which induces embryonic diapause in the progeny, caused DH-PBAN mRNA content to increase at 5 different stages in the life cycle. By contrast, a 15$^{\circ}C$ incubation only induced expression of the gene at the late phrase adult stage. The temperature-controlled expression of DH-PBAN gene is closely correlated to the incidence of diapause, indicating that DH-PBAN gene expression is the initial event leading to diapause induction. DH acts to stimulate trehalase activity in developing ovary to bring about hyprglycogenism in mature eggs, a prerequisite metabolism for diapause initiation. Using in vivo and in vitro systems, DH is clearly shown to induce trehalase gene expression in developing ovaries. New protein synthesis is not needed for this process, but a Ca2+-dependent proteinkinase seems to be involved. Quite recently, we have sucessfully applied a new and potent trehalase inhibitor (Trehazoline) to reudce glycogen content in developing ovaries. The eggs deficient in glycogen were also able to enter diapause as the natural eggs do, so that we could provide the new egg system to reconsider the diapause associated metabolism other than the glycogen-sorbitol metabolic system.

• Journal of the Semiconductor & Display Technology
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• v.16 no.2
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• pp.94-97
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• 2017

Amorphous Si has been used for data processing circuits in flat panel displays. However, low mobility of the amorphous Si is a limiting factor for the data transmission speed. Metal oxides such as ZnO have been studied to replace the amorphous Si. ZnO is a wide bandgap (3.3 eV) semiconductor with high mobility and good optical transparency. When ZnO is grown by sputtering with $O_2$ as an oxidizer, there can be many ion species arising from $O_2$ decomposition. $O^+$, $O_2{^+}$, and $O^-$ ions are expected to be the most abundant species, and it is not clear which one contributes to the ZnO growth. We applied alternating substrate voltage (0 V and -70 V) during sputtering growth. We studied changes in transistor characteristics induced by the voltage switching. We also compared ZnO grown by dc and rf sputtering. ZnO film was grown at $450^{\circ}C$ substrate temperature. ZnO thin-film transistor grown with these methods showed $7.5cm^2/Vsec$ mobility, $10^6$ on-off ratio, and -2 V threshold voltage.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.5
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• pp.376-381
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• 2019

In this work, we evaluated the structural, electrical and optical properties of $Ge_8Sb_2Te_{11}$ and Cu-doped $Ge_8Sb_2Te_{11}$ thin films prepared by rf-magnetron reactive sputtering. The 200-nm-thick deposited films were annealed in a range of $100{\sim}400^{\circ}C$ using a furnace in an $N_2$ atmosphere. The amorphous-to-crystalline phase changes of the thin films were investigated by X-ray diffraction (XRD), UV-Vis-IR spectrophotometry, a 4-point probe, and a source meter. A one-step phase transformation from amorphous to face-centered-cubic (fcc) and an increase of the crystallization temperature ($T_c$) was observed in the Cu-doped film, which indicates an enhanced thermal stability in the amorphous state. The difference in the optical energy band gap ($E_{op}$) between the amorphous and crystalline phases was relatively large, approximately 0.38~0.41 eV, which is beneficial for reducing the noise in the memory devices. The sheet resistance($R_s$) of the amorphous phase in the Cu-doped film was about 1.5 orders larger than that in undoped film. A large $R_s$ in the amorphous phase will reduce the programming current in the memory device. An increase of threshold voltage ($V_{th}$) was seen in the Cu-doped film, which implied a high thermal efficiency. This suggests that the Cu-doped $Ge_8Sb_2Te_{11}$ thin film is a good candidate for PRAM.

• KEPCO Journal on Electric Power and Energy
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• v.5 no.1
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• pp.39-43
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• 2019

Hydrogen energy has positive effects as an alternative energy source to overcome the energy shortage issues. On the other hand, since stability is very important in use, sensor technology that enables accurate and rapid detection of hydrogen gas is highly required. In this study, hydrogen sensor was developed on AlGaN/GaN heterostructure platform using Pd catalyst where a recess structure was employed to improve the sensitivity. Temperature and bias voltage dependencies on sensitivity were carefully investigated using a hydrogen concentration of 4% that is the safety threshold concentration. Due to the excellent properties of AlGaN/GaN heterostructure in conjunction with the recess structure, a very high sensitivity of 56% was achieved with a fast response speed of 0.75 sec.

• ALGAE
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• v.36 no.4
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• pp.263-283
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• 2021

To explore the ecophysiological characteristics of the kleptoplastidic dinoflagellate Shimiella gracilenta, we determined its spatiotemporal distribution in Korean coastal waters and growth and ingestion rates as a function of prey concentration. The abundance of S. gracilenta at 28 stations from 2015 to 2018 was measured using quantitative real-time polymerase chain reaction. Cells of S. gracilenta were detected at least once at all the stations and in each season, when temperature and salinity were 1.7-26.4℃ and 9.9-35.6, respectively. Moreover, among the 28 potential prey species tested, S. gracilenta SGJH1904 fed on diverse prey taxa. However, the highest abundance of S. gracilenta was only 3 cells mL^-1 during the study period. The threshold Teleaulax amphioxeia concentration for S. gracilenta growth was 5,618 cells mL^-1, which was much higher than the highest abundance of T. amphioxeia (667 cells mL^-1). Thus, T. amphioxeia was not likely to support the growth of S. gracilenta in the field during the study period. However, the maximum specific growth and ingestion rates of S. gracilenta on T. amphioxeia, the optimal prey species, were 1.36 d^-1 and 0.04 ng C predator^-1 d^-1, respectively. Thus, if the abundance of T. amphioxeia was much higher than 5,618 cells mL^-1, the abundance of S. gracilenta could be much higher than the highest abundance observed in this study. Eurythermal and euryhaline characteristics of S. gracilenta and its ability to feed on diverse prey species and conduct kleptoplastidy are likely to be responsible for its common spatiotemporal distribution.

• Animal Bioscience
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• v.35 no.2
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• pp.308-316
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• 2022

Objective: This study was conducted to determine reduction of various odorous materials from a swine farm equipped with a continuous pit recirculation system (CPRS) with aerobically treated liquid manure. Methods: The CPRS is used in swine farms in South Korea, primarily to improve air quality in pig houses. In this study, CPRS consists of a manure aerobic treatment system and a fit recirculation system; the solid fraction is separated and composted, whereas the aerobically treated liquid fraction (290.0%±21.0% per day of total stored swine slurry) is continuously returned to the pit. Four confinement pig barns in three piggery farms were used; two were equipped with CPRS and the other two operated a slurry pit under the slatted floor. Results: All chemical contents of slurry pit manure in the control were greater than those of slurry pit manure in the CRPS treatment (p<0.05). Electrical conductivity and pH contents did not differ among treatments. The biological oxygen demand of the slurry pit treatment was greater than that of the other treatments (p<0.05). Total nitrogen, total phosphorus, and ammonia nitrogen contents of the slurry pit treatment were greater than those of other treatments (p<0.05). Odor intensity of the CPRS treatment was lower than that of the control at indoor, exhaust, and outside sampling points (p<0.05). The temperature and carbon dioxide of the CPRS treatment in the pig barn was significantly lower than those of control (p<0.05). All measured odorous material contents of the CPRS group were significantly lower than those of the control group (p<0.05). Conclusion: The CPRS application in pig farms is considered a good option as it continuously reduces the organic load of animal manure and lowers the average odorant concentration below the threshold of detecting odorous materials.

• Journal of Aerospace System Engineering
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• v.17 no.4
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• pp.18-27
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• 2023

In this paper, the structural-thermal-optical performance analysis of the mirror was performed by setting the laser heat source as the boundary condition of the thermal analysis. For the laser heat source model, the Beer-Lambert model considering semi-transparent optical material based on Gaussian beam was selected as the boundary condition, and the mechanical part was not considered, to analyze the performance of only the mirror. As a result of the thermal analysis, thermal stress and thermal deformation data due to temperature change on the surface of the mirror were obtained. The displacement data of the surface due to thermal deformation was fitted to a Zernike polynomial to calculate the optical performance, through which the performance of the mirror when a high-energy laser was incident on the mirror could be predicted.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.6
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• pp.588-593
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• 2023

The advantage of OTFT technology is that large-area circuits can be manufactured on flexible substrates using a low-cost solution process such as inkjet printing. Compared to silicon-based inorganic semiconductor processes, the process temperature is lower and the process time is shorter, so it can be widely applied to fields that do not require high electron mobility. Materials that have utility as electrode materials include carbon that can be solution-processed, transparent carbon thin films, and metallic nanoparticles, etc. are being studied. Recently, a technology has been developed to facilitate charge injection by coating the surface of the Al electrode with solution-processable titanium oxide (TiOx), which can greatly improve the performance of OTFT. In order to commercialize OTFT technology, an appropriate method is to use a complementary circuit with excellent reliability and stability. For this, insulators and channel semiconductors using organic materials must have stability in the air. In this study, carbon-doped Mo (MoC) thin films were fabricated with different graphite target power densities via unbalanced magnetron sputtering (UBM). The influence of graphite target power density on the structural, surface area, physical, and electrical properties of MoC films was investigated. MoC thin films deposited by the unbalanced magnetron sputtering method exhibited a smooth and uniform surface. However, as the graphite target power density increased, the rms surface roughness of the MoC film increased, and the hardness and elastic modulus of the MoC thin film increased. Additionally, as the graphite target power density increased, the resistivity value of the MoC film increased. In the performance of an organic thin film transistor using a MoC gate electrode, the carrier mobility, threshold voltage, and drain current on/off ratio (I_on/I_off) showed 0.15 cm²/V·s, -5.6 V, and 7.5×10⁴, respectively.