• JSTS:Journal of Semiconductor Technology and Science
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• 제14권5호
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• pp.625-631
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• 2014

We propose a compact power-on reset circuit consisting of a switched capacitor, a capacitor, and a Schmitt trigger inverter. A switched capacitor working with a clock signal charges the capacitor. Thus, the voltage across the capacitor is increased toward the supply voltage. The circuit provides a reset pulse until the voltage across the capacitor reaches the high threshold voltage of the Schmitt trigger inverter. The proposed circuit is simple, compact, has no static power consumption, and works for a wide range of power-on rising times. Furthermore, the clock signal is available while the reset pulse is activated. The proposed circuit works for up to 6 s of power-on rising time, and occupies a $60{\times}30{\mu}m^2$ active area.

• 센서학회지
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• 제26권3호
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• pp.209-213
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• 2017

The delay-insensitive Null Convention Logic (NCL) asynchronous design as one of innovative asynchronous logic design methodologies has many advantages of inherent robustness, power consumption, and easy design reuses. However, transistor-level structures of conventional NCL gate cells have weakness of high area overhead and high power consumption. This paper proposes a new NCL gate based on power gating structure. The proposed $4{\times}4$ NCL multiplier based on power gating structure is compared to the conventional NCL $4{\times}4$ multiplier and MTNCL(Multi-Threshold NCL) $4{\times}4$ multiplier in terms of speed, power consumption, energy and size using PTM 45 nm technology.

• 한국전기전자재료학회논문지
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• 제29권5호
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• pp.263-267
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• 2016

In this paper, we analyzed the electrical characteristics of NPT planar and trench gate IGBT after designing these devices according to design and process parameter. To begin with, we have designed NPT planar gate IGBT and carried out simulation with T-CAD. Therefore, we extracted design and process parameter and obtained optimal electrical characteristics. The breakdown voltage was 724 V and The on state voltage drop was 1.746 V. The next was carried out optimal design of trench gate power IGBT. We did this research by same drift thickness and resistivity of planar gate power IGBT. As a result of experiment, we obtain 720 V breakdown voltage, 1.32 V on state voltage drop and 4.077 V threshold voltage. These results were improved performance and fabrication of trench gate power IGBT and planar gate Power IGBT.

• 한국전기전자재료학회논문지
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• 제21권4호
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• pp.296-299
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• 2008

The effects of radio frequency (RF) source power for decoupled plasma nitridation (DPN) process on the electrical properties and Fowler-Nordheim (FN) stress immunity of the oxynitride gate dielectrics for deep nano-technology devices has been investigated. With increase of RF source power, the threshold voltage (Vth) of a NMOS transistor(TR) decreased and that of a PMOS transistor increased, indicating that the increase of nitrogen incorporation in the oxynitride layer due to higher RF source power induced more positive fixed charges. The improved off-current characteristics and wafer uniformity of PMOS Vth were observed with higher RF source power. FN stress immunity, however, has been degenerated with increasing RF source power, which was attributed to the increased trap sites in the oxynitride layer. With the experimental results, we could optimize the DPN process minimizing the power consumption of a device and satisfying the gate oxide reliability.

• 전기전자학회논문지
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• 제19권3호
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• pp.440-446
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• 2015

본 연구는 안테나에 커플링되는 협대역 고출력 전자기파에 대한 저 잡음 증폭기(LNA)의 민감성 특성을 알아보았다. LNA 소자의 오동작/파괴는 MFR/DFR((Malfunction Failure Rate/Destruction Failure Rate)을 이용하여 소자의 민감성을 확인하였다. 그리고 LNA 소자의 내부 칩 상태는 Decapsulation 분석을 이용하여 손상부위를 관찰하였다. 협대역 고출력 전자기파 장치는 2.45 GHz 마그네트론을 사용하였고, LNA의 민간성 레벨은 협대역 고출력 전자기파의 전계강도에 따라 오동작/파괴율을 평가하였다. 그 결과, LNA 소자의 오동작은 셀프리셋(Self Reset)과 파워리셋(Power Reset)의 형태로 나타내었고, 이때 오동작 임계 전계강도는 각각 524 V/m, 1150 V/m로 측정되었다. 그리고 LNA의 소자의 파괴 임계 전계강도는 1530 V/m이다. 협대역 고출력 전자기파에 의한 LNA 소자의 내부 칩 파괴는 본드와이어, 온칩와이어 그리고 컴포넌트 세가지 형태로 관찰되었다. 이 결과로, 협대역 고출력 전자기파에 의한 반도체 전자회로의 내성평가 자료로 활용할 수 있을 것으로 판단된다.

• 대한전자공학회논문지TE
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• 제37권3호
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• pp.30-36
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• 2000

본 논문에서는 결함신호의 신호 대 잡음비를 높이기 위해 최소진복선택 알고리즘과 극 문턱치(PT : polarity threshold) 알고리즘을 결합한 최소극 문턱치(MPO : minimum polarity threshold) 알고리즘을 이용한 원전 고감쇠 용접부 초음파 검사방법을 제안하였다. 제안된 알고리즘의 유용성을 확인하기 위한 실험에서는 ASME Xl 코드에 준하는 원전의 실제 모재와 동일한 용접방법으로 제작된 대비 시험편과 4종류의 개선된 탐촉자를 이용하였다. 실험 결과, SE(safeend)와 CCSS(centrifugal casting stainless steel) 재료는 조직의 구조적 특성 때문에 산란신호가 발생하고, 용접 내부에서는 높은 감쇠 현상이 발생하여 정확한 결합검출 능력이 저하되며, 이러한 결함신호에 최소극 문턱치 알고리즘을 적용하면 신호 대 잡음비가 2.6배 개선됨을 확인하였다.

• Asian-Australasian Journal of Animal Sciences
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• 제18권8호
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• pp.1088-1097
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• 2005

Main objectives of this study were to investigate accuracy, bias and power of linear and threshold model segregation analysis methods for detection of major genes in categorical traits in farm animals. Maximum Likelihood Linear Model (MLLM), Bayesian Linear Model (BALM) and Bayesian Threshold Model (BATM) were applied to simulated data on normal, categorical and binary scales as well as to disease data in pigs. Simulated data on the underlying normally distributed liability (NDL) were used to create categorical and binary data. MLLM method was applied to data on all scales (Normal, categorical and binary) and BATM method was developed and applied only to binary data. The MLLM analyses underestimated parameters for binary as well as categorical traits compared to normal traits; with the bias being very severe for binary traits. The accuracy of major gene and polygene parameter estimates was also very low for binary data compared with those for categorical data; the later gave results similar to normal data. When disease incidence (on binary scale) is close to 50%, segregation analysis has more accuracy and lesser bias, compared to diseases with rare incidences. NDL data were always better than categorical data. Under the MLLM method, the test statistics for categorical and binary data were consistently unusually very high (while the opposite is expected due to loss of information in categorical data), indicating high false discovery rates of major genes if linear models are applied to categorical traits. With Bayesian segregation analysis, 95% highest probability density regions of major gene variances were checked if they included the value of zero (boundary parameter); by nature of this difference between likelihood and Bayesian approaches, the Bayesian methods are likely to be more reliable for categorical data. The BATM segregation analysis of binary data also showed a significant advantage over MLLM in terms of higher accuracy. Based on the results, threshold models are recommended when the trait distributions are discontinuous. Further, segregation analysis could be used in an initial scan of the data for evidence of major genes before embarking on molecular genome mapping.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2005년도 창립60주년 기념 추계 학술대회
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• pp.99.2-99.2
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• 2005

• 한국정밀공학회지
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• 제25권2호
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• pp.43-48
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• 2008

This paper proposes a new method for measuring the power of spherical and cylindrical lens with 6 points light source, which is composed of a LED and six holes, and magnification ellipse fitting algorithm. Each measured diagonal length of 6 points light source is determined by the target lens power. After finding the center position of each light point with threshold method, 3 axis-diagonal lengths were calculated. The long axis and short axis power of cylindrical lens can be calculated by using magnification ellipse fitting algorithm with the magnification relationships between the initial diagonal lengths and the measured diagonal lengths changed by lens power.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1989년도 추계학술대회 논문집 학회본부
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• pp.180-185
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• 1989

In the current source type active power filter, the DC current source is implemented using an inductor with large inductance by maintaining the inductor current constantly. In this case, to compensate the loss of the switching devices of the power converter and the inductor, some real power should be supplied to the filter from the source. This process is analyzed through the equivalent circuit which expresses the loss of the switching devices and the inductor with the equivalent resistor R. This work discusses the validation of this DC side equivalent circuit and points out the problems, through the experiments using the experimental active power filter with 220V, 10KVA ratings, and suggests a more accurate equivalent circuit which puts the saturation voltage of the power transistors and the threshold voltage of the diodes into consideration.