• 한국재료학회지
• /
• 제21권8호
• /
• pp.456-460
• /
• 2011

Microelectromechanical systems (MEMS)-fabricated suspended devices were used to measure the in-plane electrical conductivity, Seebeck coefficient, and thermal conductivity of 304 nm and 516 nm thick InGaAlAs films with 0.3% ErAs nanoparticle inclusions by volume. The suspended device allows comprehensive thermoelectric property measurements from a single thin film or nanowire sample. Both thin film samples have identical material compositions and the sole difference is in the sample thickness. The measured Seebeck coefficient, electrical conductivity, and thermal conductivity were all larger in magnitude for the thicker sample. While the relative change in values was dependent on the temperature, the thermal conductivity demonstrated the largest decrease for the thinner sample in the measurement temperature range of 325 K to 425 K. This could be a result of the increased phonon scattering due to the surface defects and included ErAs nanoparticles. Similar to the results from other material systems, the combination of the measured data resulted in higher values of the thermoelectric figure of merit (ZT) for the thinner sample; this result supports the theory that the reduced dimensionality, such as in twodimensional thin films or one-dimensional nanowires, can enhance the thermoelectric figure of merit compared with bulk threedimensional materials. The results strengthen and provide a possible direction in locating and optimizing thermoelectric materials for energy applications.

• Journal of Korean Vacuum Science & Technology
• /
• 제3권2호
• /
• pp.134-138
• /
• 1999

We have setup a compact and useful in-situ SMOKE system in order to study surface magnetism of ultra-thin films. Since the longitudinal or polar magnetic fields can be applied to the sample by just rotating the sample manipulator, It is very simple to take hysteresis curve for in-plane or polar surface magnetism. The SMOKE system was tested by investigating the surface magnetism of ultra-thin Co film deposited on Pt(111) surface.

• 한국결정성장학회지
• /
• 제18권3호
• /
• pp.105-108
• /
• 2008

PZ와 PT를 각각 3층씩 그 순서를 달리하고 열처리 과정을 달리하여 4가지 시료를 만들었다. PZ와 PT를 독립적으로 열처리 한 시료들에서는 PZ와 PT가 독립적으로 존재하는 경향이 강한 반면 PZ와 PT를 동시에 열처리 한 시료들은 PZT 복합상이 존재하는 확률이 더 높아졌다. 후자의 경우 PT를 먼저 증착한 쪽이 더 안정적인 PZT 상을 만든다는 결론을 지을 수 있었다.

• 공업화학
• /
• 제34권1호
• /
• pp.30-35
• /
• 2023

TiO₂ 졸을 사용하여 유리알 표면에 TiO₂ 코팅한 후 건조 처리한 시료(TB)와 소성한 시료(TBc)를 제조하였다. 이들 시료에 대한 TiO₂ 박막의 특성분석과 메틸렌블루 및 톨루엔의 광분해 실험을 수행하였다. FE-SEM, XPS 및 FTIR 분석 결과, TB 시료의 TiO₂ 박막은 스펀지 폼과 같은 형태이며 무정형 TiO₂와 일부 결정형 TiO₂가 존재하였다. TBc 시료의 TiO₂ 박막에는 결정형 TiO₂가 주로 존재하며 침상형 입자와 미세 입자들이 혼재하였다. TBc 시료(46 mg/g)의 톨루엔 흡착량은 같은 코팅량의 TB 시료 대비 적었으나 톨루엔 분해율은 비슷했다. TB 시료의 경우, TiO₂ 코팅량이 증가함에 따라 톨루엔 분해능이 흡착능에 비해 적게 감소하였다. 이러한 결과는 소성하지 않은 TB 시료는 TiO₂ 코팅량이 증가하면 무정형 텍스처의 비표면적은 감소하는 반면 결정성 입자들의 활성점 감소는 적게 일어나기 때문으로 판단된다.

• E2M - 전기 전자와 첨단 소재
• /
• 제7권1호
• /
• pp.7-14
• /
• 1994

Structural and optical characteristics in $SnO_2$/a-Se/Al sample by aging variation and applying constant voltage had been investigated. a-Se was varied with monoclinic structure and its surface was greatly exchanged. Its capacitance was first decreased and then increased and its photo-current, photo-voltage and photo-capacitance were increased gradually with day and applying voltage. From the results, crystallization of a-Se and dopant trap level formation had been identified. Also, it was acknowledged $SnO_2$/a-Se/Al sample is useful in photovoltaic and solid thin film cell.

• KIEE International Transactions on Electrophysics and Applications
• /
• 제3C권6호
• /
• pp.246-251
• /
• 2003

We report the theory of thin-sample Z -scan for materials, viz. diffusion-dominated photorefractives, having a nonlinearly induced phase that may be proportional to the spatial derivative of the intensity profile. The on-axis far-field intensity is approximately an even function of the scan distance on different positive and negative values for phase shift $\Delta$$\Phi$$_{o}$. In case of positive phase shift, the Z -scan graph shows a minimum and two maxima, while for the negative value, only one minimum is observed. The fact is that far-field beam profiles display beam distortion and shift of the peak as compared with Kerr-type or photovoltaic nonlinearities.s.

• 한국전자현미경학회:학술대회논문집
• /
• 한국현미경학회 2001년도 제32차 추계학술대회
• /
• pp.18-22
• /
• 2001

A technique to characterize specific site of materials using a combination of a dedicated focused ion beam system(FIB), and Intermediate-voltage scanning transmission electron microscope(STEM) or transmission electron microscope(TEM) equipped with a scanning electron microscope(SEM) unit has been developed. The FIB system is used for preparation of electron transparent thin samples, while STEM or TEM is used for localization of a specific site to be milled in the FIB system. An FIB-STEM(TEM) compatible sample holder has been developed to facilitate thin sample preparation with high positional accuracy Positional accuracy of $0.1{\mu}m$ or better can be achieved by the technique. In addition, an FIB micro-sampling technique has been developed to extract a small sample directly from a bulk sample in a FIB system These newly developed techniques were applied for the analysis of specific failure in Si devices and also for characterization of a specific precipitate In a metal sample.

• Current Photovoltaic Research
• /
• 제1권1호
• /
• pp.52-58
• /
• 2013

Two different window-structured $CuInGaSe_2$(CIGS) solar cells, i.e., CIGS/thin-CdS/ZnO:B(sample A) and CIGS/very thin-CdS/Zn(S/O)/ZnO:B(sample B), were prepared, and the diffusivity of Zn, Cd, S, and B atoms, respectively, in the CIGS, ZnO or Zn(S/O) layer was estimated by a theoretical fit to experimental secondary ion mass spectrometer data. Diffusivities of Zn, Cd, S, and B atoms in CIGS were $2.0{\times}10^{-13}(1.5{\times}10^{-13})$, $4.6{\times}10^{-13}(4.4{\times}10^{-13})$, $1.6{\times}10^{-13}(1.8{\times}10^{-13})$, and $1.2{\times}10^{-12}cm^2/s$ at 423K, respectively, where the values in parentheses were obtained from sample B and the others from sample A. The diffusivity of the B atom in a Zn(S/O) of sample B was $2.1{\times}10^{-14}cm^2/sec$. Moreover, the diffusivities of Cd and S atoms diffusing back into ZnO(sample A) or Zn(S/O)(sample A) layers were extremely low at 423K, and the estimated diffusion coefficients were $2.2{\times}10^{-15}cm^2/s$ for Cd and $3.0{\times}10^{-15}cm^2/s$ for S.

• Applied Microscopy
• /
• 제46권2호
• /
• pp.110-115
• /
• 2016

Transmission electron microscopy (TEM) is a powerful tool for analyzing a broad range of materials and provides localized information about the microstructure. However, the analysis results are strongly influenced by the quality of the thin foil specimen. Sample preparation for TEM analysis requires considerable skill, especially when the area of interest is small or the material of interest is difficult to thin because of its high hardness and its mechanical instability when thinned. This article selectively reviews recent advances in TEM sample preparation techniques using a tripod polisher. In particular, it introduces two typical types (fl at type and wedge type) of TEM sample preparation and the benefits and drawbacks of each method; finally, a method of making better samples for TEM analysis is suggested.

• 한국표면공학회:학술대회논문집
• /
• 한국표면공학회 2013년도 춘계학술대회 논문집
• /
• pp.112-113
• /
• 2013

Thin CrAlMgSiN films, whose composition were 30.6Cr-11.1Al-7.3Mg-1.2Si-49.8N (at.%), were deposited on steel substrates in a cathodic arc plasma deposition system. They consisted of alternating crystalline Cr-N and AlMgSiN nanolayers. After oxidation at $800^{\circ}C$ for 200 h in air, a thin oxide layer formed by outward diffusion of Cr, Mg, Al, Fe, and N, and inward diffusion of O ions. Silicon ions were relatively immobile at $800^{\circ}C$. After oxidation at $900^{\circ}C$ for 10 h in air, a thin $Cr_2O_3$ layer containing dissolved ions of Al, Mg, Si, and Fe formed. Silicon ions became mobile at $900^{\circ}C$. After oxidation at $900^{\circ}C$ for 50 h in air, a thin $SiO_2-rich$ layer formed underneath the thin $Cr_2O_3$ layer. The film displayed good oxidation resistance. The main factor that decreased the oxidation resistance of the film was the outward diffusion and subsequent oxidation of Fe at the sample surface, particularly along the coated sample edge.