• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.08a
• /
• pp.110-110
• /
• 2010

현재 박막 트랜지스터는 비정질 실리콘 기반의 개발이 주를 이루고 있으며, 이 비정질 실리콘은 성막공정이 간단하고 대면적에 용이하지만 전기적인 특성이 우수하지 않기 때문에 디스플레이의 적용에 어려움을 겪고 있다. 이에 따라 poly-Si을 이용한 박막 트랜지스터의 연구가 진행되고 있는데, 이는 공정온도가 높고, 대면적에의 응용이 어렵다. 따라서 앞으로 저온 공정이 가능하며 대면적 응용이 용이한 박막 트랜지스터의 연구가 필수적이다. 한편 최근 박막 트랜지스터의 채널층으로 사용되는 물질에는 oxide 기반의 ZnO, SnO2, In2O3 등이 주로 사용되고 있고, 보다 적합한 채널층을 찾기 위한 연구가 많이 진행되어 왔다. 최근 Hosono 연구팀에서 IGZO를 채널층으로 사용하여 high mobility, 우수한 on/off ratio의 특성을 가진 소자 제작에 성공함으로써 이를 시작으로 IGZO의 연구 또한 세계적으로 활발한 연구가 이루어지고 있다. 특히, ZnO는 wide band gap (3.37eV)을 가지고 있어 적외선 및 가시광선의 투과율이 좋고, 전기 전도성과 플라즈마에 대한 내구성이 우수하며, 낮은 온도에서도 성막이 가능하다는 특징을 가지고 있다. 그러나 intrinsic ZnO 박막은 bias stress 같은 외부 환경이 변했을 경우 전기적인 성질의 변화를 가져올 뿐만 아니라 고온에서의 공정이 불안정하다는 요인을 가지고 있다. ZnO의 전기적인 특성을 개선하기 위해 본 연구에서는 hafnium을 doping한 ZnO을 channel layer로 소자를 제작하고 전기적 특성을 평가하였다. 이를 위해 DC magnetron sputtering을 이용하여 ZnO 기반의 박막 트랜지스터를 제작하였다. Staggered bottom gate 구조로 ITO 물질을 전극으로 사용하였으며, 제작된 소자는 semiconductor analyzer를 이용하여 출력특성과 전이 특성을 평가하였으며, ZnO channel layer 증착시 hafnium이 도핑 되는 양을 조절하여 소자를 제작한 후 intrinsic ZnO의 소자 특성과 비교 분석하였다. 그 결과 hafnium을 doping 시킨 소자의 field effect mobility가 $6.42cm^2/Vs$에서 $3.59cm^2/Vs$로 낮아졌지만, subthreshold swing 측면에서는 1.464V/decade에서 0.581V/decade로 intrinsic ZnO 보다 좋은 특성을 나타냄을 알 수 있었다. 그리고 intrinsic ZnO의 경우 외부환경에 대한 안정성 문제가 대두되고 있는데, hafnium을 도핑한 ZnO의 경우 temperature, bias temperature stability, 경시변화 등의 다양한 조건에서의 안정성이 확보된다면 intrinsic ZnO 박막트랜지스터의 문제점을 해결할 수 있는 물질로 될 것이라고 기대된다.

• Korean Journal of Optics and Photonics
• /
• v.31 no.4
• /
• pp.169-175
• /
• 2020

We design a polarization-independent dielectric multilayer thin-film diffraction grating for a spectral-beam-combining (SBC) system with a simple grating structure and low aspect ratio. To maintain the high quality of the SBC beam, we propose a multilayer mirror structure in which the wavefront distortion due to stress accumulation is minimized. Moreover, to prevent light absorption from contamination, an optimized design to minimize the grating thickness was performed. The optimally designed diffraction grating has 99.36% diffraction efficiency for -1st-order polarization-independent light, for incidence at the Littrow angle and 1055-nm wavelength. It is confirmed that the designed diffraction grating has sufficient process margin to secure a polarization-independent diffraction efficiency of 96% or greater.

• Applied Microscopy
• /
• v.49
• /
• pp.3.1-3.7
• /
• 2019

Graphene, which is one of the most promising materials for its state-of-the-art applications, has received extensive attention because of its superior mechanical properties. However, there is little experimental evidence related to the mechanical properties of graphene at the atomic level because of the challenges associated with transferring atomically-thin two-dimensional (2D) materials onto microelectromechanical systems (MEMS) devices. In this study, we show successful dry transfer with a gel material of a stable, clean, and free-standing exfoliated graphene film onto a push-to-pull (PTP) device, which is a MEMS device used for uniaxial tensile testing in in situ transmission electron microscopy (TEM). Through the results of optical microscopy, Raman spectroscopy, and TEM, we demonstrate high quality exfoliated graphene on the PTP device. Finally, the stress-strain results corresponding to propagating cracks in folded graphene were simultaneously obtained during the tensile tests in TEM. The zigzag and armchair edges of graphene confirmed that the fracture occurred in association with the hexagonal lattice structure of graphene while the tensile testing. In the wake of the results, we envision the dedicated preparation and in situ TEM tensile experiments advance the understanding of the relationship between the mechanical properties and structural characteristics of 2D materials.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2016.02a
• /
• pp.144.2-144.2
• /
• 2016

Diamond-like carbon (DLC) coatings have been widely applied to the mechanical components, cutting tools due to properties of high hardness and wear resistance. Among them, hydrogenated amorphous carbon (a-C:H) coatings are well-known for their low friction properties, stable production of thin and thick film, they were reported to be easily worn away under high temperature. Non-hydrogenated tetrahedral amorphous carbon (ta-C) is an ideal for industrial applicability due to good thermal stability from high $sp^3$-bonding fraction ranging from 70 to 80 %. However, the large compressive stress of ta-C coating limits to apply thick ta-C coating. In this study, the thick ta-C coating was deposited onto Inconel alloy disk by the FCVA technique. The thickness of the ta-C coating was about $3.5{\mu}m$. The tribological behaviors of ta-C coated disks sliding against $Si_3N_4$ balls were examined under elevated temperature divided into 23, 100, 200 and $300^{\circ}C$. The range of temperature was setting up until peel off observed. The experimental results showed that the friction coefficient was decreased from 0.14 to 0.05 with increasing temperature up to $200^{\circ}C$. At $300^{\circ}C$, the friction coefficient was dramatically increased over 5,000 cycles and then delaminated. These phenomenon was summarized two kinds of reasons: (1) Thermal degradation and (2) graphitization of ta-C coating. At first, the reason of thermal degradation was demonstrated by wear rate calculation. The wear rate of ta-C coatings showed an increasing trend with elevated temperature. For investigation of relationship between hardness and graphitization, thick ta-C coatings(2, 3 and $5{\mu}m$) were additionally deposited. As the thickness of ta-C coating was increased, hardness decreased from 58 to 49 GPa, which means that graphitization was accelerated. Therefore, now we are trying to increase $sp^3$ fraction of ta-C coating and control the coating parameters for thermal stability of thick ta-C at high temperatures.

• Korean Journal of Materials Research
• /
• v.11 no.7
• /
• pp.575-579
• /
• 2001

GaN buffer layer and epilayer have been grown on sapphire (0001) by metal organic chemical vapor deposition (MOCVD). GaN buffer layer ranging from 26 nm to 130 nm in thickness was grown at 55$0^{\circ}C$ prior to the 4 $\mu\textrm{m}$ thick GaN epitaxial deposition at 110$0^{\circ}C$. After GaN buffer layer growth, buffer layer surface was examined by atomic force microscopy (AFM). As the thickness of GaN buffer layer was increased, surface morphology of GaN epilayer was investigated by scanning electron microscopy (SEM). Double crystal X-ray diffraction (DCXRD) and Raman spectroscopy were employed to study crystallinity of GaN epilayers. Optical properties of GaN epilayers were measured by photoluminescence (PL). The epilayer grown with a thin buffer layer had rough surface, and the epilayer grown with a thick buffer layer had mirror-like surface of epilayer. Although the stress on the latter was larger than on the former, its crystallinity was much better. These results imply that the internal free energy is decreased in case of the thick buffer layer. Decrease in internal free energy promotes the lateral growth of the GaN film, which results in the smoother surface and better crystallinity.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.11 no.1
• /
• pp.20-26
• /
• 2001

Titanium boride ($\textrn{TiB}_{x}$) films were deposited on (100) silicon substrates at the substrate temperature of $500^{\circ}C$ by means of the co-evaporation of titanium and boron evaporants during deposition. The co-evaporation method makes it possible to deposit the non-stoichiometric films with different boron-to-titanium ratio($0{\le}B/Ti \le 2.5$). The resistivity increases linearly as the boron-to-titanium ratio in the as-deposited films is increased. The surface roughness of $\textrn{TiB}_{x}$ films is changed as a function of the boron-to-titanium ratio. The XRD spectrum for pure titanium film shows a highly (002) preferred orientation. For B/Ti=0.59 ratio only a single TiB phase that shows a (111) preferred orientation is observed. However, the $\textrn{TiB}_{x}$ phase with the hexagonal structure of the $AlB_2$(C32) type appears as the boron concentration increase, and only a single $\textrn{TiB}_{x}$ phase is observed for $B/Ti \ge 2.0$ ratio. The $\textrn{TiB}_{x}$/Si samples reveal a tensile stress (3~$20{\times}^9$dyn/$\textrm{cm}^2$) in the overall composition of the films, although the magnitude of the residual stresses is depended on the nominal B/Ti ratio.

• Journal of the Microelectronics and Packaging Society
• /
• v.13 no.1 s.38
• /
• pp.7-15
• /
• 2006

In-situ observation of electromigration in thin film pattern of 63Sn-37Pb solder was performed using a scanning electron microscope system. The 63Sn-37Pb solder had the incubation stage of electromigration for edge movement when the current density of $6.0{\times}10^{4}A/cm^2$ was applied the temperature between $90^{\circ}C\;and\;110^{\circ}C$. The major diffusion elements due to electromigration were Pb and Sn at temperatures of $90-110^{\circ}C\;and\;25-50^{\circ}C$, respectively, while no major diffusion of any element due to electromigration was detected when the test temperature was $70^{\circ}C$. The reason was that both the elements of Sn and Pb were migrated simultaneously under such a stress condition. The existence of the incubation stage was observed due to Pb migration before Sn migration at $90-110^{\circ}C$. Electromigration behavior of 63Sn-37Pb solder had an incubation time in common for edge drift and void nucleation, which seemed to be related the lifetime of flip chip solder bump. Diffusivity with $Z^*$(effective charges number) of Pb and Sn were strongly affect the electromigration-induced major diffusion element in SnPb solder by temperature, respectively.

• Journal of the Microelectronics and Packaging Society
• /
• v.28 no.1
• /
• pp.39-46
• /
• 2021

The quantitative measurement of interfacial adhesion energy (Gc) of multilayer thin films for Cu interconnects was investigated using a double cantilever beam (DCB) and 4-point bending (4-PB) test. In the case of a sample with Ta diffusion barrier applied, all Gc values measured by the DCB and 4-PB tests were higher than 5 J/㎡, which is the minimum criterion for Cu/low-k integration without delamination. However, in the case of the Ta/Cu sample, measured Gc value of the DCB test was lower than 5 J/㎡. All Gc values measured by the 4-PB test were higher than those of the DCB test. Measured Gc values increase with increasing phase angle, that is, 4-PB test higher than DCB test due to increasing plastic energy dissipation and roughness-related shielding effects, which matches well interfacial fracture mechanics theory. As a result of the 4-PB test, Ta/Cu and Cu/Ta interfaces measured Gc values were higher than 5 J/㎡, suggesting that Ta is considered to be applicable as a diffusion barrier and a capping layer for Cu interconnects. The 4-PB test method is recommended for quantitative adhesion energy measurement of the Cu interconnect interface because the thermal stress due to the difference in coefficient of thermal expansion and the delamination due to chemical mechanical polishing have a large effect of the mixing mode including shear stress.