• Mass Spectrometry Letters
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• v.12 no.2
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• pp.47-52
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• 2021

Evaluating the impurity concentrations in semiconductor thin films using time of flight secondary ion mass spectrometry (ToF-SIMS) is an effective technique. The mass interference between isotopes and matrix element in data interpretation makes the process complex. In this study, we have investigated the doping concentration of phosphorus in, phosphorus doped silicon thin film on glass using ToF-SIMS in the dynamic mode of operation. To overcome the mass interference between phosphorus and silicon isotopes, the quantitative analysis of counts to concentration conversion was done following two routes, standard relative sensitivity factor (RSF) and SIMetric software estimation. Phosphorus doped silicon thin film of 180 nm was grown on glass substrate using hot wire chemical vapor deposition technique for possible applications in optoelectronic devices. Using ToF-SIMS, the phosphorus-31 isotopes were detected in the range of 10¹~10⁴ counts. The silicon isotopes matrix element was measured from p-type silicon wafer from a separate measurement to avoid mass interference. For the both procedures, the phosphorus concentration versus depth profiles were plotted which agree with a percent difference of about 3% at 100 nm depth. The concentration of phosphorus in silicon was determined in the range of 10¹⁹~10²¹ atoms/cm³. The technique will be useful for estimating distributions of various dopants in the silicon thin film grown on glass using ToF-SIMS overcoming the mass interference between isotopes.

• Proceedings of the KIEE Conference
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• 2002.07c
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• pp.1555-1558
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• 2002

This paper presents deposition and characterizations of microcrystalline silicon(${\mu}c$-Si:H) films prepared by hot wire chemical vapor deposition at substrate temperature below $300^{\circ}C$. The $SiH_4$ Concentration$[F(SiH_4)/F(SiH_4)+F(H_2)]$ is critical parameter for the formation of Si films with microcrystalline phase. At 6% of silane concentration, deposited intrinsic ${\mu}c$-Si:H films shows sufficiently low dark conductivity and high photo sensitivity for solar cell applications. P-type ${\mu}c$-S:H films deposited by Hot-Wire CVD also shows good electrical properties by varying the rate of $B_2H_6$ to $SiH_4$ gas. The solar cells with structure of Al/nip ${\mu}c$-Si:H/TCO/glass was fabricated with sing1e chamber Hot-Wire CVD. About 3% solar efficiency was obtained and applicability of HWCVD for thin film solar cells was proven in this research.

• International Journal of Highway Engineering
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• v.11 no.2
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• pp.121-132
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• 2009

Thin bonded continuously reinforced concrete overlay(CRCO) was constructed on He existing jointed plain concrete pavement(HCP) surface at Seo-Hae-Ahn express highway in South Korea in order to evaluate its applicability and performance. Two sections of road were considered for this evaluation. In the first section, the concrete overlayer was placed and cut down to the existing layer to form transverse joints while CRCO was constructed on top of the existing layer in the second section. Early strength concrete(Type III) was utilized for both overlay sections. The depth of milling and the thickness of overlaid layer were 5 cm and 10 cm, respectively. Several vibrating wire gauges(VWG) were installed to evaluate the performance of CRCO with respect to curling, delamination, and crack propagation. As a result of the strength test, it was found that strength of the material reaches the design criteria within 1-3 days. Analysis with vibrating wire gauge(VWG) showed CRCO effectively restricts joint movement. High adhesive strength also was observed from the material regardless of length of aging. Meanwhile, transverse cracks were observed on the middle of the section where JPCP overlay was applied whereas arbitrarily cracks in transverse direction were observed on the section where CRCP was applied.

• Journal of Korea Society of Industrial Information Systems
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• v.6 no.1
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• pp.70-76
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• 2001

The disc type driver with Nd-Fe-B magnet is one of the servo drivers, which have many applications in various fields. For efficient and easy, it is desirable to be small and thin in its size. However, the driver which uses a conventional wire reel is very difficult to be reduced in its volume. one of alternatives to achieve the above goal is the thick film multilayer winding. The winding method will significantly reduce the total volume of the driver. Therefor this paper proposed the thick film multilayer winding methods and consists of parts: design manufactures, properties and applications.

• Journal of Korean Vacuum Science & Technology
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• v.2 no.1
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• pp.43-48
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• 1998

The effect of mcirostructure on the electrical properties of yttria stabilized zirconia (YSZ) was analyzed by modeling layer arrangements and mixed phase structure. The YSZ thin films were deposited by RF magnetron sputtering using 30mol% YSZ and 8 mol% YSZ targets with yttrium pellets on porous alumina substrates. The structure, composition and electricla properties of the YSZ films were investigated as functions of sputtering conditons and layer arrangements by XRD, TEM, XPS and acimpedance spectroscopy. The results showed that the triple palyered YSZ films had highermicrohardness, lower compressive stress state and higher ionic conductivity by one order than single and double layered YSZ films. However, sputtered YSZ films have low conductivity compared to YSZ pellets or doctor bladed YSZ thin plates. These results were probably due to the influence of insulating alumina substrates, impractical for most stacking geometries and inductance induced by relatively long platinum, lead wire on YSZ conductivity.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.335-338
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• 1997

Platinum-Cobalt alloy thin films were deposited on A1$_2$O$_3$substrate by magnetron cosputtering for RTD temperature sensors with wide temperature ranges. We made Pt-Co alloy resistance patterns on the A1$_2$O$_3$substrate by lift-off method and fabricated Pt-Co alley RTD temperature sensors by using Pt-wire, Pt-paste. We investigated the physical and electrical characteristics of theme films under various conditions, input power, working vacuum, annealing temperature and time, and also after annealing these films. The resistivity and sheet resistivity of these films were decreased with increasing the annealing temperature. At input power of Pt : 4.4 W/cm$^2$, Co : 6.91 W/cm$^2$, working vacuum of 10 mTorr and annealing conditions of 800$^{\circ}C$ and 60 min, the resistivity and sheet resistivity of Pt-Co thin films was 15${\mu}$$\Omega$$.$cm and 0.5$\Omega$/ , respectively, and the TCR value of Pt-Co alloy thin films with thickness of 3000${\AA}$ was 3740ppm/$^{\circ}C$ in the temperature range of 25∼600$^{\circ}C$. These results indicate that Pt-Co alloy thin films hove potentiality for the RTD with wide temperature ranges.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.6
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• pp.509-513
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• 2000

The physical and electrical characteristics of MgO and Pt thin-films on it deposited by reactive sputtering and rf magnetron sputtering respectively were analyzed with annealing temperature and time by four point probe SEM and XRD. Under annealing conditions of 100$0^{\circ}C$ and 2 hr, MgO thin-film had the properties of improving Pt adhesion to SiO$_2$and insulation without chemical reaction to Pt thin-film and the sheet resistivity and the resistivity of Pt thin-film deposited on it were 0.1288 Ω/ and 12.88 $\mu$$\Omega$.cm respectively. We made Pt resistance pattern on SiO$_2$/Si substrate by life-off method and fabricated Pt thin-film type microheater for thermal microsensors by Pt-wire Pt-paste and SOG(spin-on-glass). In the temperature range of 25~40$0^{\circ}C$ we estimated TCR(temperature coefficient of resistance) and resistance ratio of thin-film type Pt-RTD(resistance thermometer device). We obtained TCR value of 3927 ppm/$^{\circ}C$ close to the bulk Pt value. Resistance values were varied linearly within the range of the measurement temperature. The thermal characteristics of fabricated thin-films type Pt micorheater were analyzed with Pt-RTD integrated on the same substrate. The heating temperature of Pt microheater could be up to 40$0^{\circ}C$ with 1.5 watts of the heating power.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.340-343
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• 2008

This work reports the simple fabrication of the single cell gap transflective liquid crystal display (LCD) using wire grid polarizer. The nano sized wire grid polarizer was patterned on common electrode itself, on the reflective part of FFS (Fringe field switching) mode whereas the common electrode was unpatterned at transmissive part. However, this structure didn't show single gamma curve, so we further improved the device by patterning the common electrode at transmissive part. As a result, V-T curve of proposed structure shows single gamma curve. Such a device structure is free from in-cell retarder, compensation film and reflector and furthermore it is very thin and easy to fabricate.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.3
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• pp.191-195
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• 2015

Inside the existing superconducting cables, the superconducting wire carries a loss-free current, and the cable former (the stranded copper wire) bypasses the fault current to prevent damage and loss of the superconducting cable when the fault current is applied. The fault-current-limiting-type superconducting cable proposed in this paper usually carries a steady current; but in a fault state, the cable generates self-resistance that makes the fault current lower than a certain width. That is, the superconducting cable that transmitted only a low voltage and a large capacity power repetitively limits the fault current, as does a superconducting current limiter. To complete this structure, it is essential to investigate the mutual resistance relationship between the superconducting wires after applying a fault current. Therefore, in this paper, one kinds of superconducting wires (a wire without a stabilization layer) were connected parallel 4 tapes, respectively; and after applying a fault current, the current, voltage, resistance and thermal stability of the HTS thin-film wires were examined.

• Journal of the Korean Society for Precision Engineering
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• v.24 no.7 s.196
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• pp.98-105
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• 2007

In modern industries, materials are required that possess multi-functional properties and at the same time flexibility in their shapes with structural stability. The major technology realizing this requirement consists of thinning metal wires and laying them with stable contact nodes. This research has dealt with a new method to manufacture thin wires by drawing without applying dies, but with introducing enforced necking, which enables to process multi-ends. Based on the new method, the process dynamics was modelled and its steady-state characteristics were analyzed. Results showed that the profiles of the material velocity in the drawing zone increased with a downward convex shape, while the cross-sectional area decreased with the shape of upward convex. The microwave heating turned out to be effective in wire drawing, but dependent on the input feeding direction. The variation in the diameters of the drawn wires was negatively affected by increasing the drawing ratio.