• 한국결정성장학회지
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• 제4권2호
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• pp.199-209
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• 1994

Titanium tetra iso-propoxide와 Lead acetate trihydrate를 출발물질로 사용하여 제조한 졸을 현미경용 soda-lime-silica 슬라이드 유리, Si-Wafer 및 Sapphire 기판 위에 Dip-coating법으로 박막을 제조하였으며, 안정한 졸을 얻기 위하여 Acetylacetone을 첨가하였다. 졸의 점도, 조성등의 영향을 조사하였고, 조성변화, 막의 두께 변화, 열처리 온도에 따른 가시영역에서의 투과율과 굴절율 및 IR Spectra를 측정하였으며, $PbTiO_3$ 박막의 결정 생성 유무를 XPD로 검토하였다. 또하 EDX로 슬라이드 유리에서 박막으로의 확산 유무를 조사하였다. 제조된 졸은 20일동안 침전없는 안정한 상태를 유지하였다. 가시영역에서의 투과율은 열처리온도와 막의 두께가 증가함에 따라 감소하였고, flat한 투과특성을 나타내었다. 슬라이드 유리 위에 코팅한 $PbTiO_3$ 박막은 $600^{\circ}C$에서 열처리한 경우 Pyrochlore형이 나타났고, Si-Wafer와 Sapphire 기판 위에 코팅할 경우에는 $600^{\circ}C$에서 Pyrochlore형이 나타나기 시작하였으며, 열처리 온도가 높아짐에 따라 $800^{\circ}C$에서 $PbTi_3O_7$상이 나타났다.

• 접착 및 계면
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• 제11권3호
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• pp.120-125
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• 2010

UV-curable acrylic Pressure-sensitive adhesives (Acrylic PSAs) are used in many different parts in the world. A wafer manufacture process which is based on semiconductor industry is one thing. We have used acrylic PSAs whose thickness is different from $20{\mu}m$ to $30{\mu}m$ in wafer manufacture process so far. But as wafers become more thinner, acrylic PSAs are supposed to satisfy the requirements such as proper adhesion performance. The main purpose of this research is studying proper adhesion performance and UV-curing behavior of UV-curable acrylic PSAs with very thin thickness and then determining optimized conditions to raise the efficiency of thin wafer production. Acrylic PSAs contain 2-Ethylhexyl Acrylate (2-EHA), Acrylic Acid (AA) and Butyl Acrylate (BA). Ethyl acetate (EtAc) is used as solvent. The acrylic PSAs are obtained using solvent polymerization. Thickness of UV-curable acrylic PSAs is different from $10{\sim}30{\mu}m$. By peel strength and probe tack, adhesion performance and UV curing behavior of acrylic PSA are concerned.

• Journal of information and communication convergence engineering
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• 제4권4호
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• pp.147-150
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• 2006

The thin film of PbTiO3 is fabricated at substrate temperature of 100-150$^{\circ}C$. The infrared spectrum of the ferroelectric thin film is measured as temperature of thermal treatment, 400 - 550$^{\circ}C$. According to infrared spectrum analysis, there are absorption bands at a nearby wave number of 1000 $\sim$ 400 cm-l and the thin film treated by temperature of 550$^{\circ}C$ has absorption bands of wave number 500 cm-l similar to infrared response property of PbTiO3 powder. The pyroelectric infrared detector is fabricated after deposition of Pt and PbTiO3 thin film on Si wafer by sputtering machine. The measured remnant polarization are 11.5-12.5$\muC/cm2$, breakdown electric field Ec is 100-120KV/cm, and voltage responsivity and detectivity is -280V/W, -108cm Hz/W.

• Transactions on Electrical and Electronic Materials
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• 제15권6호
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• pp.344-347
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• 2014

This study was carried out on DLC thin film deposition technology used in infrared optical system production as a method of reducing the shape changes of the molding core and the consequent loss of life. Experiments on the deposition on silicon wafer and tungsten carbide used as a substrate for molding core were conducted at each processing condition using a filtered arc system, and it was found that the surface and mechanical properties were of the greatest quality when the substrate bias voltage of -150 V was used. In addition, it was confirmed that the PV and Ra characteristics were improved by the deposition of the DLC thin film.

• 한국표면공학회지
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• 제25권6호
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• pp.287-292
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• 1992

Silicon nitride thin film (SiNx) was deposited onto the 3inch silicon wafer using an electron cyclotron resonance (ECR) plasma apparatus. The thin films which were deposited by changing the SiH4N2 gas flow rate ratio at 1.5mTorr without substrate heating were analyzed through the x-ray photo spectroscopy (XPS) and ellipsometer measurements, etc. Silicon nitride thin films prepared by the electron cyclotron resonance plasma chemical vapor deposition method at low substrate temperature (<10$0^{\circ}C$) exhibited excellent physical and electrical properties. The very uniform and good quality silicon nitride thin films were obtained. The characteristics of electron cyclotron resonance plasma were inferred from the analyzed results of the deposited films.

• 한국세라믹학회지
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• 제31권2호
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• pp.227-233
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• 1994

The Bi-Sr-Ca-Cu-O thin films were deposited by RF-magnetron sputtering method on Si(P-111) wafer without a buffer layer and annealed at various temperatures in oxygen atmosphere. The temperature dependence of electrical resistance, the microstructure of intermediate phase, and the surface morphology of films were examined by four probe method, XRD, and SEM, respectively. The chemical composition and the depth profile of the films were determined by ESCA spectra. Thin films annealed at $600^{\circ}C$ and $700^{\circ}C$ in oxygen atmosphere showed onset temperatures of 90 K and 85K, and Tc(zero) of 22K and 31K, respectively. The sample annealed at $700^{\circ}C$ had the highest volume fraction of superconducting phase and showed smooth microsturcture. In ESCA spectra, the thin films were homogeneous with depth.

• 한국소음진동공학회논문집
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• 제11권4호
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• pp.31-36
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• 2001

A spin coater is a machine to coat wafer or LCD display with thin film. Vibration in the spin coater may be one of main troubles in the coating process. In this paper, we focus on the difference between two spin coaters. Vibration sources are identified by experimental approach and are compared to find the difference between the two spin coaters. Also, the particle concentration is observed by laser particle counter (LPC) for the two spin coaters, when the spin coaxers are working. It is also considered whether the defect rate is proportional to the particle concentration. The result shows that particle generation in the coating process is related to excessive vibration of the spin coater shaft and the particles influence the defect rate of the thin film product.

• 한국전기전자재료학회논문지
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• 제13권9호
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• pp.776-780
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• 2000

ZnGa$_2$O$_4$thin films were prepared on Si(100) wafer in terms of RF power, substrate temperatures and Ar/O$_2$flow rate by RF Magnetron Sputtering. Photoluminescence(PL) measurement was employed to observe the emission spectra of ZnGa$_2$O$_4$films. The influences of various deposition parameters on the properties of grown films were studied. The optimum substrate deposition temperature for luminous characteristics was about 50$0^{\circ}C$ in this investigation. PL spectrum of ZnGa$_2$O$_4$ thin films showed broad band luminescence spectrum.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1996년도 추계학술대회 논문집
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• pp.79-81
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• 1996

We fabricated SrTiO$_3$thin film capacitor on the Ag/Si-wafer by RF sputtering deposition. And I-V characteristics and structual analysis of the thin film capacitor are investigated. We found that the leakage current of the films during deposition is strongly denpent on the ambient gas and substrate temperature. Because of increase of activation energy, leakage current increased at high temperature and resistivity of the films was decreased. According to the increase of oxygen gas flow rate, the conductivity of thin film capacitor was increased and leakage current was decreased.

• JSTS:Journal of Semiconductor Technology and Science
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• 제14권1호
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• pp.117-123
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• 2014

The fabrication and characterization of a Si/ZnO thin film heterojunction ultraviolet photodiode has been presented in this paper. ZnO thin film of ~100 nm thick was deposited on <100> Silicon (Si) wafer by atomic layer deposition (ALD) technique. The Photoluminescence spectroscopy confirms that as-deposited ZnO thin film has excellent visible-blind UV response with almost no defects in the visible region. The room temperature current-voltage characteristics of the n-ZnO thin film/p-Si photodiodes are measured under an UV illumination of $650{\mu}W$ at 365 nm in the applied voltage range of ${\pm}2V$. The current-voltage characteristics demonstrate an excellent UV photoresponse of the device in its reverse bias operation with a contrast ratio of ~ 1115 and responsivity of ~0.075 A/W at 2 V reverse bias voltage.