• 한국세라믹학회지
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• 제35권3호
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• pp.259-263
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• 1998

WSi2/CVD-Si/SiO2/Si-substrate의 폴리사이드 구조에서 실리콘 증착 POCl3 확산 그리고 WSi2 증착 유무에 따른 Thin oxide 특성을 연구했다 WSi2 막을 증착하지 않은 CVD-Si/SiO2/Si-substrate 구조에서 CVD-Si을 po-lycrystalline-Si으로 증착한 시편이 amorphous-Si을 증착한 시편보다 산화막 불량이 적다 WSi2 를 증착시킨 WSi2/CVD-Si/SiO2./Si-substrate의 구조에서 CVD-Si의 polycrystalline-Si 혹든 amorphous-Si 의 막 증착에 따른 thin oxide의 불량율 차이는 미미하다 산화막 불량은 CVD-Si에 확산시킨 인(P) 증가 즉 면저항(sheet resistance) 감소로 증가한다. Thin oxide의 절연특성은 WSi2 증착으로 저하된다 WSi2 증착으로 산화막 두께는 증가하나 막 특성은 열등해져 산화막 절연성이 떨어진다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.52-52
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• 2011

A novel deposition process for n-type nanocrystalline silicon (n-type nc-Si) thin films at room temperature has been developed by adopting the neutral beam assisted chemical vapor deposition (NBa-CVD). During formation of n-type nc-Si thin film by the NBa-CVD process with silicon reflector electrode at room temperature, the energetic particles could induce enhance doping efficiency and crystalline phase in polymorphous-Si thin films without additional heating on substrate; The dark conductivity and substrate temperature of P-doped polymorphous~nano crystalline silicon thin films increased with increasing the reflector bias. The NB energy heating substrate(but lower than $80^{\circ}C$ and increase doping efficiency. This low temperature processed doped nano-crystalline can address key problem in applications from flexible display backplane thin film transistor to flexible solar cell.

• The Korean Journal of Ceramics
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• 제3권3호
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• pp.163-168
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• 1997

Most of heteroepitaxial $\beta$-SiC thin films have been successfully grown on Si(100) adapting a carburizing process, by which a few atomic layers of substrate surface is chemically converted to very thin SiC layer using hydrocarbon gas sources. Using an organo-silicon precursor, bis-trimethylsilymethane (BTMSM, [$C_7H_{20}Si_2$]), heteropitaxial $\beta$-SiC thin films were successfully grown directy on Si substrate without a carburized buffer layer. The defect density of the $\beta$-SiC thin films deposited without a carburized layer was as low as that of $\beta$-SiC films deposited on carburized buffer layer. In addition, void density was also reduced by the formation of self-buffer layer using BTMSM instead of carburized buffer layer. It seems to be mainly due to the characteristic bonding structure of BTMSM, in which Si-C was bonded alternately and tetrahedrally (SiC$_4$).

• 한국결정학회지
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• 제4권2호
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• pp.92-99
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• 1993

Diethylzinc를 사용하여 PECVD장치로 ZnO 박막을 증 착하여 미세구조를 분석하였다. 기판 온도 100℃에서부터 이미 미세 결정 입자로 구성된 ZnO 박막의 증착이 가능했으며, 200℃이상에서는 C 축 배향성이 뛰어난 ZnO 박막이 유리 기판위에 증착되었다. c-면 사파이어 기판위에 증착된 ZnO 박막을 TEM으로 분석한 결과 기판 온도 350℃에서 EPITAXIAL (002) ZnO 박막이 성장됐으며, 입계에서는 Moire패턴에 의한 dislocation이 관찰되었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 추계학술대회 논문집
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• pp.324-327
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• 2000

ZnO(Zinc Oxide) thin films were deposited on glass substrate by Facing Targets Sputtering. Facing Targets Sputtering system can deposit thin films in plasma-free situation and change the sputtering conditions in wide range. The characteristics of ZnO thin films deposited at variation of sputtering conditions films thickness, power and substrate temperature were evaluated by XRD(x-ray diffractometer), ${\alpha}$-step (Tencor). The excellently c-axis oriented ZnO thin films were obtained at sputter pressure ImTorr, power 150W, substrate temperature 200$^{\circ}C$. In these conditions, the rocking curve of ZnO thin films deposited on glass was 3.3$^{\circ}$.

• 전기학회논문지P
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• 제57권4호
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• pp.395-399
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• 2008

The purpose of this paper is to investigate the fabrication of P(VDF-TrFE) organic thin films through the vapor deposition method and the piezoelectric properties of the organic thin films thus produced. Vapor deposition was performed under the following conditions: the working temperature, and the pressure of reaction chamber were $300^{\circ}C$, and $2.0{\times}10^{-5}$ Torr, respectively. The molecular structure and crystallinity of the evaporated organic thin films were evaluated by using a FT-IR (Fourier-Transform Infrared spectroscopy) and XRD (X-ray diffractometry), The results showed that crystallinity increased with an increase in the substrate temperature. When the P(VDF-TrFE) organic thin films were fabricated by increasing the substrate temperature, its piezoelectric coefficient($d_{33}$) increased.

• 한국표면공학회지
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• 제33권4호
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• pp.229-232
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• 2000

C-axis oriented zinc oxide thin films were deposited on glass substrate by reactive Facing Targets Sputtering (FTS) system. The characteristics of zinc oxide thin films on power, inter targets distance, and substrate temperature were investigated by XRD(x-ray diffractometer), alphastep (Tencor) analyses. The Facing Targets Sputtering system can deposit thin film in plasma-free situation and change the deposition condition in wide range. The excellently c-axis oriented zinc oxide thin films were obtained at sputter pressure 1mTorr, sputtering current 0.4A, substrate temperature $300^{\circ}C$, inter targets distance 100mm. In the conditions, the rocking curve of zinc oxide thin films deposited on ZnO/Glass was $3.9^{\circ}$.

• 한국세라믹학회지
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• 제32권4호
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• pp.441-447
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• 1995

Ba0.65Sr0.35TiO3 (BST) thin films were deposited on Pt/SiO2/Si(100) substrate by rf magnetron sputtering. The substrate temperature changed from 35$0^{\circ}C$ to 55$0^{\circ}C$ and crystalline BST thin films were deposited above 45$0^{\circ}C$. Most of the films had (111) preferred orientation regardless of deposition temperature, but the films changed to (100) preferred orientation as gas pressure increased. The dielectric constant increased with increasing substrate temperature and film thickness, and ranged from 100 to 600 at room temperature. The leakage current increased as substrate temperature increased or as film thickness decreased.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1998년도 춘계학술대회 논문집
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• pp.325-329
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• 1998

In this paper, the (Sr$_{1-x}$ Ca$_{x}$)TiO$_3$(SCT) thin films were deposited at various substrate temperature using RF magnetron sputtering method on optimized Pt-coated electrodes (Pt/TiN/SiO$_2$/Si). An influence of substrate temperature and annealing temperature on the structural and dielectric properties are investigated. The substrate temperature changed from 100[$^{\circ}C$] to 500[$^{\circ}C$] and crystalline SCT thin films were deposited abode 400[$^{\circ}C$]. All thin films had (111) preferred orientation, the (100) oriented films were obtained at the substrate temperature above 400[$^{\circ}C$]. The dielectric constant changes almost linearly in the temperature region of -80~+90[$^{\circ}C$], the temperature characteristics of the dielectric loss exhibited a stable value within 0.1, then not affected by substitutional contents. The capacitance characteristics appears a stable value within $\pm$5[%].

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 추계학술대회 논문집
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• pp.398-401
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• 1999

We prepared diamond thin films on WC-Co substrate in a mixtured $H_2-CH_4-O_2$, gas, using 13.%MHz RF PACVD. Scanning electron microscopy, X-ray diffraction and Rarnan spectroscopy were used to analyze the characteristics of thin film, and tribometer of ball-on-disk type were used to test the wear resistance between thin film and substrate. The good diamond quality and wear resistance was appeared with cemented tungsten carbide substrate treated with oxygen plasma.