• 전기학회논문지
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• 제66권8호
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• pp.1230-1235
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• 2017

We studied surface texture-etching of glass substrate by using reactive ion etching process with various working pressure (0.7~9.0 mT). With the increase in the pressure, a haze parameter, which means diffusive transmittance/total transmittance, was increased in overall wavelength regions, as measured by spectrophotometer. Also, atomic force microscopy (AFM) study also showed that the surface topography transformed from V-shaped, keen surface to U-shaped, flattened surface, which is beneficial for nanocrystalline silicon semiconductor growth with suppressing defective crack formation. The texture-etched ZnO:Al combined with textured glass exhibited pronounced haze properties that showed 60~90 % in overall spectral wavelength regions. This promising optical properties of double textured, transparent conducting substrate can be widely applied in silicon thin film photovoltaics and other optoelectronic devices.

• 한국표면공학회지
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• 제28권4호
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• pp.225-235
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• 1995

To investigate the effects of pretreatment and substrate bias on the characteristics of the diamond thin films, the thin films were deposited on the p-type Si(100) wafer by MPECVD using mixtures of $H_2$, $CH_4$, and $O_2$ gases. Deposition was carried out at the substrate temperature of $900^{\circ}C$ and at the pressure of 40torr. The effect of the pretreatment on the film formation was the examined by using SiC and diamond powders as abrasive powders. Furthermore, the substrate bias effect on the formation of the diamond film was also examined. The highest nucleation density was observed for the pretreatment with 40~60$\mu\textrm{m}$ size of diamond powders and a negative bias potential(-50V). Many defects and(111) twins in the diamond films were observed.

• 한국기계가공학회지
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• 제12권2호
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• pp.62-67
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• 2013

The influence of internal stress and joint strength(shear, tensile) according to the deposition conditions was investigated by the Polyimide substrate and ZnO thin film. Deposition thickness and temperature affect the internal stress and the internal stress was minimum at the 60nm and $200^{\circ}C$ of the deposition conditions. Tensile strength is large at the deposition condition that shear strength is large and the shear strength was about 50% of the tensile strength. The shear strength and tensile strength were large at deposition condition that internal stress was small. Crack occurred near the joint interface of Polyimide substrate and progressed along the interface until the final fracture.

• 한국산학기술학회논문지
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• 제21권1호
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• pp.8-13
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• 2020

IC 패키지와 같이 두께가 수백 마이크로미터 정도로 매우 얇은 기판에서 뒤틀림 불량을 일으키는 가장 큰 원인은 응력이다. 일반적으로 응력은 기판 위에 서로 다른 물질을 적층할 때, 결정구조 및 그에 따른 열팽창 계수의 차이로 인해 발생한다. 본 연구에서는 사각형의 박막 패턴이 적층된 기판에 발생하는 응력의 거동을 수치적으로 분석하였다. 먼저 기판 변위를 구하고, 이를 이용하여 기판 변형률과 응력을 구하였다. 박막 패턴의 가장자리에 인장력이 집중된 경우, 박막 패턴의 가장자리를 중심으로 수직 응력과 전단 응력이 발생한다. 수직 응력은 박막 패턴의 가장자리와 꼭짓점 부근에 발생한다. 전단 응력도 박막 패턴의 가장자리를 중심으로 발생하나 수직 응력과는 달리 꼭짓점 부근에는 나타나지 않는다. 또한 가장자리를 중심으로 전단 응력의 크기와 방향이 바뀌는 것을 확인할 수 있었다. 박막패턴 가장자리 힘이 동일할 때, 수직 응력은 전단 응력에 비해 10배 정도의 값을 나타내었다. 이는 뒤틀림 불량을 일으키는 가장 큰 원인이 수직 응력임을 나타낸다.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2003년도 하계종합학술대회 논문집 II
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• pp.1049-1052
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• 2003

This study shows the change of the structural characteristic of AIN thin film deposition with the change of the deposition conditions such as Ar/$N_2$ gas ratio, operating pressure in chamber, and the distance between substrate and target in RF Magnetron Sputtering. The orientation and surface roughness of AIN thin film are studied by using XRD and AFM and the thickness is measured by using STYLUS PROFILER. While we can not identify the orientation of the thin film deposited in Ar only, we can obtain the (100) orientation of the thin film with the addition of $N_2$ to Ar. Especially the thin film deposited at 10% of Ar/$N_2$ gas ratio appears to be the most (100) oriented. The (100) orientation of thin film becomes weaker as the operating pressure becomes higher. The further distance between substrate and target is stronger the (100) orientation of the thin film is. The (100) orientation becomes weaker and (002) orientation starts to appear as the distance is shorter.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 하계학술대회 논문집 D
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• pp.1792-1794
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• 1999

PVDF(Polyvinylidene Fluoride) thin films were prepared by using a physical vapor deposition system. Thin films were studied by X-ray diffraction (XRD), differential scanning calorimeter (DSC). The melting point$(T_m)$ of PVDF thin films increases with increasing substrate temperature. It is found that the degree of crystallinity of PVDF thin films increases from 49.8 to 67% with increasing substrate temperature from 30 to $80^{\circ}C$.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 하계학술대회 논문집 D
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• pp.1699-1701
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• 1999

We prepared diamond thin films on WC-Co substrate in $H_2-CH_4-O_2$ gas mixture using 13.56MHz RF PACVD. Scanning electron microscopy, X-ray diffraction and Raman spectroscopy were used to analyze the nature of thin film. and Rockwell test to analyze the adhesion between thin film and substrate. The good diamond quality and adhesion was appeared with cemented tungsten carbide substrate treated with oxygen plasma.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2007년도 춘계학술대회A
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• pp.215-219
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• 2007

In this work, the indium zinc oxide (IZO) films had been deposited on the glass substrate coated with the SiO film. Based on a comparative investigation of the IZO monolayer and IZO/SiO multilayer, it is shown that the thickness of SiO film has a great effect on the mechanical properties of the thin films. The AFM images of the IZO thin film included the SiO film were shown smoother surfaces than monolayer. Resistivity was in inverse proportion to Mobility. If it deposited the SiO film on the substrate, the layer of change was generated between two layer(SiO and substrate). The layer of change influenced resistance because of oxygen content was more than the IZO monolayer.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1998년도 추계학술대회 논문집
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• pp.331-334
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• 1998

Crystal structure and surface morphology of Se thin film fabricated by EBE method had been studied. Se thin film was deposited with amorphous structure until substrate temperature of l00$^{\circ}C$. But Se thin film was grown with monoclinic structure at substrate temperature af over 150$^{\circ}C$, and its lattice constant of a, b and c was 12.76${\AA}$, 9.15${\AA}$ and 10.41${\AA}$ respectively. Also, after heat-treatment at 150。 for 15 min with substrate temperature of l00。, amorphous Se was proved to be hexagonal structure, and its lattice constant of a and c was 4.27${\AA}$ and 4.83${\AA}$ respectively.

• E2M - 전기 전자와 첨단 소재
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• 제9권5호
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• pp.445-449
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• 1996

Structural and optical characteristics in Se thin film fabricated by EBE method had been studied. Se thin film was deposited with noncrystalline until substrate temperature of >$100^{\circ}C$ Color of its surface had red genealogy, and its optical energy band gap was about 2.45 eV. But Se film was grown with monoclinic at substrate temperature of over >$150^{\circ}C$ Also, color of its surface had gray genealogy, and its optical energy band gap was about 2.31 eV. Finally, after heat-treatment at >$150^{\circ}C$ for 15 min with substrate temperature of >$100^{\circ}C$ noncrystalline Se was proved to be hexagonal, and color of its surface had dark gray genealogy, and its optical energy band gap was about 2.06 eV. From the results, it was known that Se thin film for photoelectric device with the lowest optical energy band gap was accepted from hexagonal structure.