• 대한전자공학회논문지
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• 제25권7호
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• pp.791-798
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• 1988

Films of Cr, Cu, and Al were deposited by the evaporation technique at the high vacuum level-high evaporation rate and the low vacuum level-low evaporation rate. We measured sheet resistance and light transmittance, and observed microstructure and diffraction pattern by TEM, and investigated oxygen content in thin film by AES. We discussed the relations among microstructure, sheet resistance, and light transmittance with AES data. We found that the films deposited at the high vacuum level-high evaporation rate have small oxygen content in thin film comparing to the films deposited at the low vacuum level-low vacuum level-low evaporation rate, and that the films having crystalline structure and larger grain size were formed in the case of the high vacuum level-high evaporation rate and they showed lower sheet resistance and lower light transmittance.

• 한국자기학회지
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• 제16권1호
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• pp.98-101
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• 2006

결정립으로 이루어 진 나노구조 Pb 박막의 전기적 특성을 정상 면저항 측정을 통하여 연구하였다. 나노구조 박막은 저온 상의기판 위에 10nm이하의 두께로 증착되었으며, 1.3K부터 상온까지 박막의 온도를 변화시키면서 정상 면저항의 변화를 측정하였다. 열처리 온도에 따라 정상 면저항은 비 단조적하며 비가역적인 변화를 보였으며, 이러한 변화들은 열처리에 따른 나노구조 박막을 구성하고 있는 Pb 결정립의 크기변화로써 이해할 수 있다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.1042-1045
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• 2004

ITO thin films ($\sim150nm$) are deposited on glass substrates by different deposition condition. The sheet resistance of ITO thin films measured by using a four probe station. The microstructure of these films is determined using a X-ray diffractometer (XRD) and a scanning electron microscope (SEM) and a atomic force microscope (AEM). The sheet resistance of ITO thin films compared $s_11$ values by using a near field scanning microwave microscope.

• 소성∙가공
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• 제28권6호
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• pp.328-335
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• 2019

Demand for ultra-thin materials is increasing due to their light-weight and versatile properties. In this work, the formability of the ultra-thin stainless steel sheets of various thicknesses in the incremental sheet forming (ISF) process is investigated. The effects of the thickness on formability were evaluated with forming experiments of the truncated cone shape with 10° intervals. As the thickness of the material decreased, the maximum forming angle decreased and wrinkles also occurred quickly. The maximum forming angles in the truncated cone shape without the wrinkles for the thickness of 0.05 mm, 0.08 mm, and 0.1mm were 30°, 40°, and 50°, respectively. Wrinkles occurred in a twisted shape along the moving direction of the tool. As the material thickness increased, the size of the wrinkles increased.

• 한국주조공학회지
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• 제17권4호
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• pp.371-378
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• 1997

The study for direct synthesis of TaC carbide which was a reaction product of tantalum and carbon in the cast iron was performed. Cast iron which has hypo-eutectic composition was cast bonded in the metal mold with tantalum thin sheet of thickness of $100{\mu}m$. The contents of carbon and silicon of cast iron matrix was controlled to have constant carbon equivalent of 3.6. The chracteristics of microstructure and the formation mechanism of TaC carbide in the interfacial reaction layer in the cast iron/tantalum thin sheet heat treated isothermally at $950^{\circ}C$ for various time were examined. TaC carbide reaction layer was grown to the dendritic morphology in the cast iron/tantalum thin sheet interface by the isothermal heat treatment. The composition of TaC carbide was 48.5 at.% $Ti{\sim}48.6$ at.% C-2.8 at.% Fe. The hardness of reaction layer was MHV $1100{\sim}1200$. The thickness of reaction layer linearly increased with increasing the total content of carbon in the cast iron matrix and isothermal heat treating time. The growth constant for TaC reaction layer was proportional to the log[C] of the matrix. The formation mechanism of TaC reaction layer at the interface of cast iron/tantalum thin sheet was proved to be the interfacial reaction.

• 한국전기전자재료학회논문지
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• 제21권10호
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• pp.938-942
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• 2008

Electrical and optical properties of semitransparent Ag and Al layer were studied, which are used for the electrodes in top-emission organic light-emitting diodes. Sheet resistance and transmittance of visible light through a thin layer were measured and analyzed. Several thin metal layers of Ag and Al were deposited onto a glass substrate up to a thickness of 50 nm using a thermal evaporation. Sheet resistance measurements show that a layer thickness is needed more than 15 nm and 20 nm for Ag and Al, respectively, when a proper sheet resistance is assumed to be less than $50{\Omega}/sq$. From the measurements of transmittance of visible light through a thin-metal layer, metallic behavior was observed when the layer thickness is over 25 nm for both films. Thus, from a study of sheet resistance and transmittance of visible light, a minimum proper thickness of semitransparent metal layer is 20 nm and 25 nm for Ag and Al, respectively.

• 대한금속재료학회지
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• 제49권2호
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• pp.192-196
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• 2011

The multi-layered thin film with an ITO/Ag/ITO structure was produced on PET by using magnetron reactive sputtering method. First, 30 nm of ITO thin film was coated on PET by using normal temperature process. Then 20-52 nm of the Ag thin film was coated. Lastly, 30 nm of ITO thin film was coated on Ag layer. The sample of the 20 nm Ag thin film showed more than 70% transmission and a $2.7{\Omega}/{\Box}$ sheet resistance. When compared to the existing single-layered transparent conducting thin film, multi-layered film was found to be superior with about $5{\Omega}/{\Box}$ less sheet resistance. However, since the Ag layer became thinner, the band gap energy needs to be increased to more than 3.5 eV.

• 한국정보전자통신기술학회논문지
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• 제11권6호
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• pp.772-777
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• 2018

본 논문은 RF 마크네트론 스퍼터링 장비를 이용하여 ITO 유리에 N-type 및 P-type을 증착하였다. N-Type의 오믹접촉은 모든 조건에서 잘 되었다. 면저항은 RF Power가 증가할수록 면 저항이 증가되는 현상을 나타내었다. 증착한 박막의 표면을 분석해 본 결과, RF Power가 250W이고, 기판온도가 $250^{\circ}C$의 조건에서 입자가 균일하고 크기가 일정한 박막이 증착 된 것으로 측정되었다. P-Type은 모든 조건에서 오믹접촉이 잘 이루어졌으며 면저항은 RF Power가 증가할수록 증가되는 것으로 나타내었다. RF Power가 증가할수록 두께가 증가하고 안정화 된 것을 알 수가 있었다. PN junction 박막과 NP junction 박막은 스퍼터링 시간이 증가할수록 박막의 두께가 증가하고 안정화 된 것을 알 수가 있었다. PN junction 박막을 제작한 결과, 변환효율은 스퍼터링 시간이 10분일 때 0.2로 가장 우수하였다.

• 한국자기학회지
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• 제11권2호
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• pp.50-57
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• 2001

강자성 극박소재에 유기된 잔류응력을 검출하기 위하여 자기유도형 탐촉자(probe)를 설계·제작하였으며, 이를 장착한 잔류음력 평가시스템은 박판내에 유기된 잔류응력의 주응력 방향과 크기를 효과적으로 결정하여 준다. 이 시스템을 반도체 칩 팩키지(package)용으로 사용하는 Fe-42Ni계 lead frame 판재의 잔류응력 검출에 적용한 결과, 양호재 및 잔류응력과다 불량재에 대한 출력전압은 명확히 구별되었고, 잔류응력이 축적된 판재는 양호재와 비교하여 응력의 분포 및 크기에 있어 항상 차이를 나타내었다. 이러한 차이는 탐촉자에 투입하는 전류와 주파수의 함수로 잘 분해되어질 수 있음을 확인하였다.

• Applied Science and Convergence Technology
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• 제23권6호
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• pp.366-370
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• 2014

ZnO:Al transparent conductive films were deposited on glass substrates by RF magnetron sputtering technique and annealed by rapid thermal annealing system. The influence of annealing time on the structural, electrical, and optical properties of ZnO:Al thin films was investigated by atomic force microscopy, X-ray diffraction, Hall method and optical transmission spectroscopy. As the annealing time increases from 0 to 5 min, the crystallinity is improved, the root main square surface roughness is decreased and the sheet resistance is decreased. The lowest sheet resistance of ZnO:Al thin film is 90 ohm/sq. The reduction of sheet resistance is caused by increasing carrier concentration due to substituent Al ion. All films are transparent up to 80% in the visible wavelength range and the adsorption edge is a blue-shift due to Burstein-Moss effect with increasing annealing time.