• 제목/요약/키워드: thin reflective film

검색결과 54건 처리시간 0.028초

CaF2 두께 변화에 따른 ZnS/CaF2/ZnS/Cu 다층 박막의 광특성 (Optical Characteristics of ZnS/CaF2/ZnS/Cu with Different Optical Thickness of CaF2 Layer)

  • 김준식;장건익
    • 한국전기전자재료학회논문지
    • /
    • 제22권7호
    • /
    • pp.584-588
    • /
    • 2009
  • Layered ZnS/$CaF_2$/ZnS/Cu film was deposited on glass substrate by using evaporation method. ZnS and $CaF_2$ were chosen as high and low refractive materials. Cu was used as mid-reflective layer. Reflectance with different optical thickness of $CaF_2$ ranging from $0.25{\lambda}\;to\;0.5{\lambda}$ were systematically investigated by using spectrophotometer. In order to expect the experimental results, the simulation program, the Essential Macleod Program(EMP) was adopted and compared with the experimental data. Based on the results taken by spectrophotometer, the ZnS/$CaF_2$/ZnS/Cu multi-layered thin film show the maximum reflectance of 80% at 625nm $(0.25{\lambda}\;in\;CaF_2)$ and 42% at 660nm $(0.5{\lambda}\;in\;CaF_2)$ respectively. As compared with the experimental results and simulation data, it was confirmed the experimental data is well matched with the EMP data.

건식각을 이용한 $0.18\mu\textrm{m}$ dual polysilicon gate 형성 및 plasma damage 특성 평가 (Study of plasma induced charging damage and febrication of$0.18\mu\textrm{m}$dual polysilicon gate using dry etch)

  • 채수두;유경진;김동석;한석빈;하재희;박진원
    • 한국진공학회지
    • /
    • 제8권4A호
    • /
    • pp.490-495
    • /
    • 1999
  • In 0.18 $\mu \textrm m$ LOGIC device, the etch rate of NMOS polysilicons is different from that of PMOS polysilicons due to the state of polysilicon to manufacture gate line. To control the etch profile, we tested the ratio of $Cl_2$/HBr gas and the total chamber pressure, and also we reduced Back He pressure to get the vertical profile. In the case of manufacturing the gate photoresist line, we used Bottom Anti-Reflective Coating (BARC) to protect refrection of light. As a result we found that $CF_4O_2$ gas is good to etch BARC, because of high selectivity and good photoresist line profile after etching BARC. in the results of the characterization of plasma damage to the antenna effect of gate oxide, NO type thin film(growing gate oxide in 0, ambient followed by an NO anneal) is better than wet type thin film(growing gate oxide in $0_2+H_2$ ambient).

  • PDF

TCP-CVD법을 활용한 공정변수에 따른 산화막의 제작 (Fabrication of Oxidative Thin Film with Process Conditions by Transformer Coupled Plasma Chemical Vapor Deposition)

  • 김창조;최윤;신백균;박구범;신현용;이붕주
    • 한국진공학회지
    • /
    • 제19권2호
    • /
    • pp.148-154
    • /
    • 2010
  • 본 논문에서는 유기발광다이오드의 보호막 적용을 위하여 TCP-CVD를 이용한 실리콘 산화막 형성에서 산화막의 특성에 영향을 미치는 Power, 가스종류 및 유량, 소스와 기판거리 및 공정온도 등의 공정조건에 따른 증착된 산화막의 특성을 나타내는 증착률, 굴절률을 제어하고자 한다. 그 결과 $SiH_4$ : $O_2$ = 30 : 60 [sccm], 70 [mm]의 source와 기판 거리, Bias를 인가하지 않은 조건에서 80 [$^{\circ}C$] 이하의 공정온도를 보였으며 투과율 90% 이상, 높은 증착률 및 굴절률 1.4~1.5인 안정된 $SiO_2$ 산화박막을 제조할 수 있었다.

Strain-induced enhancement of thermal stability of Ag metallization with Ni/Ag multi-layer structure

  • 손준호;송양희;김범준;이종람
    • 한국진공학회:학술대회논문집
    • /
    • 한국진공학회 2010년도 제39회 하계학술대회 초록집
    • /
    • pp.157-157
    • /
    • 2010
  • Vertical-structure light-emitting diodes (V-LEDs) by laser lift-off (LLO) have been exploited for high-efficiency GaN-based LEDs of solid-state lightings. In V-LEDs, emitted light from active regions is reflected-up from reflective ohmic contacts on p-GaN. Therefore, silver (Ag) is very suitable for reflective contacts due to its high reflectance (>95%) and surface plasmon coupling to visible light emissions. In addition, low contact resistivity has been obtained from Ag-based ohmic contacts annealed in oxygen ambient. However, annealing in oxygen ambient causes Ag to be oxidized and/or agglomerated, leading to degradation in both electrical and optical properties. Therefore, preventing Ag from oxidation and/or agglomeration is a key aspect for high-performance V-LEDs. In this work, we demonstrate the enhanced thermal stability of Ag-based Ohmic contact to p-GaN by reducing the thermal compressive stress. The thermal compressive stress due to the large difference in CTE between GaN ($5.6{\times}10^{-6}/^{\circ}C$) and Ag ($18.9{\times}10^{-6}/^{\circ}C$) accelerate the diffusion of Ag atoms, leading to Ag agglomeration. Therefore, by increasing the additional residual tensile stress in Ag film, the thermal compressive stress could be reduced, resulting in the enhancement of Ag agglomeration resistance. We employ the thin Ni layer in Ag film to form Ni/Ag mutli-layer structure, because the lattice constant of NiO ($4.176\;{\AA}$ is larger than that of Ag ($4.086\;{\AA}$). High-resolution symmetric and asymmetric X-ray diffraction was used to measure the in-plane strain of Ag films. Due to the expansion of lattice constant by oxidation of Ni into NiO layer, Ag layer in Ni/Ag multi-layer structure was tensilely strained after annealing. Based on experimental results, it could be concluded that the reduction of thermal compressive stress by additional tensile stress in Ag film plays a critical role to enhance the thermal stability of Ag-based Ohmic contact to p-GaN.

  • PDF

High-Efficiency a-Si:H Solar Cell Using In-Situ Plasma Treatment

  • Han, Seung Hee;Moon, Sun-Woo;Kim, Kyunghun;Kim, Sung Min;Jang, Jinhyeok;Lee, Seungmin;Kim, Jungsu
    • 한국진공학회:학술대회논문집
    • /
    • 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
    • /
    • pp.230-230
    • /
    • 2013
  • In amorphous or microcrystalline thin-film silicon solar cells, p-i-n structure is used instead of p/n junction structure as in wafer-based Si solar cells. Hence, these p-i-n structured solar cells inevitably consist of many interfaces and the cell efficiency critically depends on the effective control of these interfaces. In this study, in-situ plasma treatment process of the interfaces was developed to improve the efficiency of a-Si:H solar cell. The p-i-n cell was deposited using a single-chamber VHF-PECVD system, which was driven by a pulsed-RF generator at 80 MHz. In order to solve the cross-contamination problem of p-i layer, high RF power was applied without supplying SiH4 gas after p-layer deposition, which effectively cleaned B contamination inside chamber wall from p-layer deposition. In addition to the p-i interface control, various interface control techniques such as thin layer of TiO2 deposition to prevent H2 plasma reduction of FTO layer, multiple applications of thin i-layer deposition and H2 plasma treatment, H2 plasma treatment of i-layer prior to n-layer deposition, etc. were developed. In order to reduce the reflection at the air-glass interface, anti-reflective SiO2 coating was also adopted. The initial solar cell efficiency over 11% could be achieved for test cell area of 0.2 $cm^2$.

  • PDF

ZnS/$Na_3AlF_6$/ZnS/Cr 다층 박막의 광학적 두께 변화에 따른 광특성 (The optical properties of ZnS/$Na_3AlF_6$/ZnS/Cr multi-layered thin film with different optical thickness)

  • 김준식;장강재;장건익
    • 한국전기전자재료학회:학술대회논문집
    • /
    • 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
    • /
    • pp.535-536
    • /
    • 2008
  • Multi-layered thin films of ZnS/$Na_3AlF_6$/ZnS/Cr were deposited on glass substrate by evaporation process. ZnS and $Na_3AlF_6$ were selected as high and low refractive index material, and additionally Cr was chosen as mid reflective layer respectively. The multi-layered thin films were prepared in terms of different optical thickness and different staking sequence and layers. The optical properties were systematically characterized with different optical thickness of $Na_3AlF_6$ especially $0.25\lambda$ and $0.5\lambda$. In order to expect the experimental result, the simulation program, the Essential Macleod Program(EMP) was adopted. Based on the results taken by spectrophotometer at viewing angle $45^{\circ}$, the ZnS/$Na_3AlF_6$/ZnS/Cr multi-layered thin film shows purple colour range in $0.25\lambda$, bluish green in $0.5\lambda$, red purple in $0.75\lambda$, and purple in $1.0\lambda$ respectively.

  • PDF

강유전체 위상 변위기를 위한 Reactive Circuit 설계 및 구현 (Design and Implementation of Reactive Circuit for Ferroelectric Phase Shifter)

  • 김영태;문승언;이수재;김선형;박준석;조홍구
    • 한국정보통신설비학회:학술대회논문집
    • /
    • 한국정보통신설비학회 2003년도 하계학술대회
    • /
    • pp.286-288
    • /
    • 2003
  • In this paper, in order to obtain a large differential phase shift with a little change in applied voltage, a ferroelectric reflective load circuit has been designed on top of barium strontium titanate $(Ba,Sr)TiO_3$ [BST] thin film. The design of the ferroelectric reflection-type phase shifter is based on a reflection theory of terminating circuit, which has a reflection-type analogue phase shifter with two ports terminated in symmetric phase-controllable reflective networks. To achieve large amounts of phase shift in low bias-voltage range, the effects of change of capacitance and transmission line connected with two coupled ports of a 3-dB $90^{\circ}$ branch-line hybrid coupler have been investigated. A large phase shift with a small capacitance change in the parallel terminating circuit has been demonstrated in the paper.

  • PDF

A comprehensive study of spin coating as a thin film deposition technique and spin coating equipment

  • Tyona, M.D.
    • Advances in materials Research
    • /
    • 제2권4호
    • /
    • pp.181-193
    • /
    • 2013
  • Description and theory of spin coating technique has been elaborately outlined and a spin coating machine designed and fabricated using affordable components. The system was easily built with interdisciplinary knowledge of mechanics, fluid mechanics and electronics. This equipment employs majorly three basic components and two circuit units in its operation. These include a high speed dc motor, a proximity sensor mounted at a distance of about 15 mm from a reflective metal attached to the spindle of the motor to detect every passage of the reflective metal at its front and generate pulses. The pulses are transmitted to a micro-controller which process them into rotational speed (revolution per minute) and displays it on a lead crystal display (LCD) which is also a component of the micro-controller. The circuit units are a dc power supply unit and a PWM motor speed controlling unit. The various components and circuit units of this equipment are housed in a metal casing made of an 18 gauge black metal sheet designed with a total area of 1, $529.2cm^2$. To illustrate the use of the spin-coating system, ZnO sol-gel films were prepared and characterized using SEM, XRD, UV-vis, FT-IR and RBS and the result agrees well with that obtained from standard equipment and a speed of up to 9000 RPM has been achieved.

Functional Nannomaterials Based on Nanoporous Template

  • 김진곤;양승윤;변진석;전금혜;조아라
    • 한국재료학회:학술대회논문집
    • /
    • 한국재료학회 2011년도 춘계학술발표대회
    • /
    • pp.7.1-7.1
    • /
    • 2011
  • Nanoporous templates have been widely used for the development of new functional nanostructured materials suitable for electronics, optics, magnetism, and energy storage materials. We have prepared nanoporous templates by using thin films of mixtures of polystyrene-block-poly (methyl methacrylate) (PS-b-PMMA) and PMMA homopolymers. These templates have cylindrical nanoholes spanning the entire thickness of the film. Some applications of nanoporous templates are introduced: a) anti-reflective coating, b) the preparation of conducting polymer nanowires of poly (pyrrole), poly (3,4-ethylenedioxy-thiopene) onto a glass coated with indium-tin-oxide, and c) the separation membranes for biomaterials. We found that when the pore fraction of nanoholes in the film was ~0.68, almost zero reflectance at a specific wavelength, which can be changed with film thickness, was achieved at visible wavelengths Furthermore, ultra high density array of conducting nanowires was successfully prepared onto various substrates including flexible polymer. Due to highly alignment of polymer chain along the nanowire direction, the conductivity was much increased. Furthermore, these nanoporous films were found to be very effective for the separation of human Rhinovirus type 14 (HRV 14), major pathogen of a common cold in humans, from the buffer solution. We also found that when the pore size was effectively controlled down to 6 nm, a single file diffusion was observed.

  • PDF

Fe2O3/Na3AlF6/Fe2O3/Cu, Al, Cr 다층박막의 광학적 두께에 따른 광학특성 (The Optical properties of Fe2O3/Na3AlF6/Fe2O3/Cu, Al, Cr Multi Layered Thin Film depending on the Optical Thickness)

  • 김준식;장강재;장건익
    • 한국전기전자재료학회논문지
    • /
    • 제21권7호
    • /
    • pp.665-668
    • /
    • 2008
  • Multi-layered thin films of $Fe_2O_3/Na_3AlF_6/Fe_2O_3/Cu$, Cr, Al were deposited on glass substrate by evaporation process. As high and low refractive index material, $Fe_2O_3$ and $Na_3AlF_6$ were selected and additionally Cu, Al and Cr were chosen as mid reflective layer respectively. Optical properties including reflectance were systematically studied depending on optical thickness of $Na_3AlF_6$ especially $0.25{\lambda}$ and $0.5{\lambda}$. In order to expect the experimental result, the simulation program, the Essential Macleod Program(EMP) was adopted and compared with the experimental data. Based on the results taken by spectrophotometer at viewing angle $45^{\circ}C$, the $Fe_2O_3/Na_3AlF_6/Fe_2O_3/Cu$ show the colour rage between red and orange in $0.25{\lambda}$ and green and pupple in $0.5{\lambda}$ respectively. When the Al was used as mid reflective layers in $Fe_2O_3/Na_3AlF_6/Fe_2O_3$ system, typical yellow colour and mixed colour between green and pupple were appeared in $0.25{\lambda}$ and $0.5{\lambda}$ of $Na_3AlF_6$ respectively. As compared the experimental result to simulation data, it was found out that the experimental data is relatively well matched with the EMP simulation data.