• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.540-540
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• 2013

In this studying, we investigated the basic properties of N-doped plasma polymer. The N-doped ethylcyclohexane plasma polymer thin films were deposited by radio frequency (13.56 MHz) plasma-enhanced chemical vapor deposition method. Ethylcyclohexenewas used as organic precursor (carbon source) with hydrogen gas as the precursor bubbler gas. Additionally, ammonia gas [NH3] was used as nitrogen dopant. The as-grown polymerized thin films were analyzed using ellipsometry, Fourier-transform infrared [FT-IR] spectroscopy, Raman spectroscopy, FE-SEM, and water contact angle measurement. The ellipsometry results showed the refractive index change of the N-doped ethylcyclohexene plasma polymer film. The FT-IR spectrashowed that the N-doped ethylcyclohexene plasma polymer films were completely fragmented and polymerized from ethylcyclohexane.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.17-17
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• 2010

We investigate CO gas sensing properties of multilayered TiO2 thin film gas sensors fabricated by colloidal templating of 300 nm of polymer spheres. Compared with plain films, the multilayered films show enhanced gas sensing with higher sensitivity and faster response. Also, colloidal templating by using smaller spheres (300 nm in diameter) leads to close-packed multilayered TiO2 thin films with very large-scale. This result suggest that understanding and control of the structures on the sensing properties of multilayered TiO2 thin films by colloidal templating is important in developing the films for real applications.

• 폴리머
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• 제34권5호
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• pp.450-453
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• 2010

Iron(III) p-toluenesulfonate(FTS)를 개시제로 한 pyrrole의 중합에서 용액 중합법(LPP)과 기상 중합법(VPP)으로 제조된 PPy 박막의 전기/광학적 특성 및 표면구조를 비교하였다. LPP에 비해서 VPP 방법으로 제조된 PPy 박막은 우수한 전기적 특성을 보여주었다. 표면 특성분석을 이용하여 제조된 PPy 필름의 표면 모폴로지와 표면저항과의 상관관계를 검토하였다. VPP 방법으로 제조된 PPy 박막의 표면이 LPP로 제조된 것보다 평탄하였다. VPP를 응용한 잉크젯 프린팅과 소프트 리소그래피를 사용하여 미세 패턴된 PPy 박막을 효과적으로 제조할 수 있었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.26-26
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• 2010

Cadmium sulfide (CdS) thin film for flexible optical device applications were prepared at $H_2(Ar+H_2)$ flow ratios on polyethersulfon(PES) flexible polymer substrates at room temperature by radio frequency magnetron sputtering technique. The CdS thin films deposited at room temperature showed a (002) preferred orientation and the smooth surface morphologies. Films deposited at a hydrogen flow ratio of 25% exhibited a photo- and dark-sheet resistance of about 50 and $2.7{\times}10^5{\Omega}$/square, respectively. From the result of the bending test, CdS films exhibit a strong adhesion with the PES polymer substrates and the $Al_2O_3$ passivation layer deposited on the CdS films only shows an increase of the resistance of 8.4% after exposure for 120 h in air atmosphere.

• 한국재료학회지
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• 제9권5호
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• pp.509-514
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• 1999

Interest in the integrated capacitors, which make it possible to reduce the size of and to obtain improved electrical performance of an electronic system, is expanding. In this study, $Ta_2$O\ulcorner thin film capacitors for MCM integrated capacitors were fabricated on a Upilex-S polymer film by DC magnetron reactive sputtering and the effects of low temperature annealing at various atmospheres and substrate surface morphology on the capacitor characteristics were discussed. The low temperature($150^{\circ}C$) annealing produced improved capacitor yield irrespective of the annealing at mosphere. But the leakage current of the $O_2$-annealed film was larger than that of any other films. This is presumably mosphere. But the leakage current of the $O_2$-annealed film was larger than that of any other films. This is presumably due to the change of the $Ta_2$O\ulcorner film surface by oxygen, which was explained by conduction mechanism study. Leakage current and breakdown field strength of the capacitors fabricated on the Upilex-S film were 7.27$\times$10\ulcornerA/$\textrm{cm}^2$ and 1.0 MV/cm respectively. These capacitor characteristics were inferior to those of the capacitors fabricated on the Si substrate but enough to be used for decoupling capacitors in multilayer package. Roughness Analysis of each layer by AFM demonstrated that the properties of the capacitors fabricated on the polymer film were affected by the surface morphology of the substrate. This substrate effect could be classified into two factors. One is the surface morphology of the polymer film and the other is the surface morphology of the metal bottom electrode determined by the deposition process. Therefore, the control of the two factors is important to obtain improved electrical of capacitors deposited on a polymer film.

• Bulletin of the Korean Chemical Society
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• 제34권4호
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• pp.1170-1174
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• 2013

Benzodithiophene based organic semiconducting polymer was designed and synthesized by stille coupling reaction. The structure of polymer was confirmed by NMR and IR. The weight average molecular weight ($M_w$) of polymer was 8,400 using GPC with polydispersity index of 1.4. The thermal, optical and electrochemical properties of polymer were characterized by TGA and DSC, UV-vis absorption and cyclic voltammetry. OTFT device using PBDT-10 exhibited the mobility of $7.2{\times}10^{-5}\;cm^2\;V^{-1}\;s^{-1}$ and $I_{on}/I_{off}$ of $2.41{\times}10^3$. The film morphology and crystallinity of PBDT-10, was studied using AFM and XRD.

• 한국전기전자재료학회논문지
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• 제29권12호
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• pp.759-763
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• 2016

We demonstrate the utilization of ion gel gate dielectrics for operating non-volatile transistor memory devices based on polymer semiconductor thin films. The gating process in typical electrolyte-gated polymer transistors occurs upon the penetration and escape of ionic components into the active channel layer, which dopes and dedopes the polymer film, respectively. Therefore, by controlling doping and dedoping processes, electrical current signals through the polymer film can be memorized and erased over a period of time, which constitutes the transistor-type memory devices. It was found that increasing the thickness of polymer films can enhance the memory performance of device including (i) the current signal ratio between its memorized state and erased state and (ii) the retention time of the signal.

• 한국고분자학회:학술대회논문집
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• 한국고분자학회 2006년도 IUPAC International Symposium on Advanced Polymers for Emerging Technologies
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• pp.9-10
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• 2006

Recent work in our laboratory has focused on the molecular and supramolecular engineering of conjugated polymers and oligomers for device applications, including light emitting diodes for displays and lighting, photovoltaic cells, and thin film transistors. A central finding is that the supramolecular structure of conjugated polymers can have a dominant influence on their properties and the performance of devices. Some major results include: highly efficient RGB light-emitting diodes from polymers and oligomers; high mobility n-channel polymer field effect transistors; ambipolar thin film transistors from copolymer semiconductors; and self-assembly and ambipolar charge transport in polymer nanowires.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2010년도 춘계학술발표대회
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• pp.18.1-18.1
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• 2010

Here, we introduce our R&D status and strategies for printed electronics containing the two types of aspects such as materials and process/architectures. Specially, in this talk, we focus on the high-performance polymer thin film transistors (PTFTs) backplanes fabricated by ink-jet printing using new polymer semiconductors for the applications of flexible display.

• 한국응용과학기술학회지
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• 제35권4호
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• pp.1206-1212
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• 2018

본 연구에서는 강유전성 고분자를 이용하여 제작된 100 nm 이하 두께를 가지는 박막형 커페시터의 측정 주파수에 따른 분극 반전 특성을 측정, 분석하였다. 고정된 박막 두께에 대해, 인가되는 최고 전기장의 세기가 증가할수록 더 높은 항전계에서 분극 반전이 발생되었다. 고정된 최고 전기장에 대해, 박막의 두께에 무관하게 같은 항전계에서 분극 반전이 발생되었다. 모든 측정에서 로그스케일 전기장 및 로그스케일 주파수의 관계에서 약 $0.12{\pm}0.01$의 비례 상수를 보였다. 결과적으로, 강유전체 고분자 커페시터가 40 nm 두께까지는 size effect 없이 일정한 분극 반전 특성을 보였다. 본 연구는 저전압 동작 고분자 메모리 소자의 동작 예측에 유용할 것이므로 저전압에서 동작 가능한 고분자 메모리 소자의 가능성을 보여준다.