• 제목/요약/키워드: thin film transistor

검색결과 955건 처리시간 0.039초

고온에서 제작된 n채널 다결정 실리콘 박막 트랜지스터의 단채널 효과 연구 (A Study on Short Channel Effects of n Channel Polycrystalline Silicon Thin Film Transistor Fabricated at High Temperature)

  • 이진민
    • 한국전기전자재료학회논문지
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    • 제24권5호
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    • pp.359-363
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    • 2011
  • To integrate the sensor driver and logic circuits, fabricating down scaled transistors has been main issue. At this research, short channel effects were analyzed after n channel polycrystalline silicon thin film transistor was fabricated at high temperature. As a result, on current, on/off current ratio and transconductance were increased but threshold voltage, electron mobility and s-slope were reduced with a decrease of channel length. When carriers that develop at grain boundary in activated polycrystalline silicon have no gate biased, on current was increased with punch through by drain current. Also, due to BJT effect (parallel bipolar effect) that developed under region of channel by increase of gate voltage on current was rapidly increased.

Structural Effect on Backlight Induced-leakage Current in Amorphous Silicon Thin Film Transistor

  • Kim, Sho-Yeon;Kim, Tae-Hyun;Jeon, Jae-Hong;Choe, Hee-Hwan;Lee, Kang-Woong;Seo, Jong-Hyun
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권2호
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    • pp.1308-1311
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    • 2007
  • Leakage current produced by backside illumination on bottom-gated amorphous silicon thin film transistor has been investigated. The experimental results show that the leakage current of bottomgated structure is significantly dependent on the shape of amorphous silicon pattern. A proper design of amorphous silicon pattern has been suggested in viewpoint of reducing the leakage current as well as mass production.

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Polysilicon Thin Film Transistor for Improving Reliability using by LDD Structure

  • Jung, Eun-Sik;Jang, Won-Su;Bea, Ji-Chel;Lee, Young-Jae
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2002년도 ITC-CSCC -2
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    • pp.1050-1053
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    • 2002
  • In this paper, Amorphous silicon on glass substrate was recrystallized to poly-crystalline silicon by solid phase crystallization (SPC) technology. The active region of thin film transistor (TFT) was fabricated by amorphous silicon. The output and transfer characteristics of thin film transistor with lightly doped drain (LDD) structure was measured and analyzed. As a results, analyzed TFTs reliability with LDD's length by various kinds argument such as sub-threshold swing coefficient, mobility and threshold voltages were evaluated. Stress effects in TFT were able to improve to the characteristics of turn-on current and hot carrier effects by LDD's length variations.

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LDD 구조를 이용한 다결정 실리콘 박막 트랜지스터의 신뢰성 향상 (Polysilicon Thin Film Transistor for Improving Reliability using by U]D Structure)

  • 정은식;장원수;배지철;이용재
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2002년도 하계종합학술대회 논문집(2)
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    • pp.185-188
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    • 2002
  • In this paper, Amorphous silicon on glass substrate was recrytallized to poly-crystalline silicon by solid phase crystallization(SPC) technology The active region of thin film transistor(TFT) was fabricated by amorphous silicon. The output and transfer characteristics of thin film transistor with lightly doped drain(LDD) structure was measured and analyzed. As a results, analyzed TFT's reliability with LDD's length by various kinds argument such as sub-threshold swing coefficient, mobility and threshold voltages were evaluated. Stress effects in TFT were able to improve to the characteristics of turn-on current and hot carrier effects by LDD's length variations

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유기 TFT로 구동한 유기 인광발광소자의 연구 (Organic Electrophosphorescent Device driven by Organic Thin-Film Transistor)

  • 김윤명;표상우;김준호;심재훈;정태형;김영관;김정수
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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    • pp.312-315
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    • 2001
  • Recently organic electroluminescent devices have been intensively investigated for using in full-color flat-panel display. Since the quantum efficiency of electrophosphorescent device decrease rapidly as the luminance increase, it is desirable to operate the electrophosphorescent display with active matrix rather than passive matrix. Here we report the study of driving electrophosphorescent diode with all organic thin film transistor(OTFT). The structure of electrophosphorescent diode is ITO/TPD/BCP:Ir(ppy)$_3$/BCP/Alq$_3$/Li:Al/Al. In OTFT. polymer is used as an insulator and pentacene as an active layer. Detailed performance of the integrated device will be discussed.

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LDD 구조의 다결성 실리콘 박막 트랜지스터의 특성 (Characteristics of Polysilicon Thin Film Transistor with LDD Structure)

  • 황한욱;황성수;김용상
    • 한국전기전자재료학회논문지
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    • 제11권7호
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    • pp.522-526
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    • 1998
  • We have fabricated a LDD structured polysilicon thin film transistor with low leakge current and the optimized LDD length has been obtained. The device performance is improved is improved by hydrogen passivation process. The on.off current ratio of poly0Si TFT s with $0.5{\mu}m$ and $1.0{\mu}m$ LDD length is much higher than that of conventional structured device due to the decrease of leakege current. The optimized LDD length may be $0.5{\mu}$ from the experimental data such as on/off current ratio, threshold voltage and hydrogenation effect.

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TFT를 이용한 비틀린 네마틱 액정 셀에서 외부 압력에 따른 액정 동력학에 관한 연구 (Study on Pressure-dependent Dynamics of Liquid Crystal in a Twisted Nematic Liquid Crystal Cell with Thin Film Transistor)

  • 고재완;김미숙;정연학;김향율;이승희
    • 한국전기전자재료학회논문지
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    • 제17권4호
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    • pp.426-431
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    • 2004
  • We have studied the pressure-dependent liquid crystal's dynamics in a twisted nematic (TN) liquid crystal panel with thin film transistor by applying an external pressure to it. When the external pressure is applied to the panel in a dark state, the disclination lines were generated as a light leakage whereas they did not appear in a simple test cell that has only pixel and common electrodes. It was because the disclination lines were Provoked by the electric field between pixel electrode and data/gate bus line for active matrix driving. Consequently, the external pressure resulted in dynamic instability of the liquid crystal so that the disclination lines at the data/gate bus line intruded into the active area.

ZnO 박막트랜지스터의 어닐링 조건에 따른 전류 변화 (Current Variation in ZnO Thin-Film Transistor under Different Annealing Conditions)

  • 유덕연;김형주;김준영;조중열
    • 반도체디스플레이기술학회지
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    • 제13권1호
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    • pp.63-66
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    • 2014
  • ZnO is a wide bandgap (3.3 eV) semiconductor with high mobility and good optical transparency. However, off-current characteristics of ZnO thin-film transistor (TFT) need improvements. In this work we studied the variation in ZnO TFT current under different annealing conditions. Annealing usually modifies gas adsorption at grain boundaries of ZnO. When oxygen is adsorbed, electron density decreases due to strong electronegativity of the oxygen, and TFT current decreases as a result. Our experiments showed that current increased after vacuum annealing and decreased after air annealing. We explain that the change of off-current is caused by the desorption and adsorption of oxygen at the grain boundaries.

Structure Effects on Organic Thin-Film Transistor Properties of Dinaphthyl Substituted Pentacene Derivatives

  • Son, Ji-Hee;Kang, In-Nam;Oh, Se-Young;Park, Jong-Wook
    • Bulletin of the Korean Chemical Society
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    • 제28권6호
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    • pp.995-998
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    • 2007
  • Pentacene moiety has been widely studied in Organic Thin-Film Transistor (OTFT) device as a channel layer because of high carrier mobility. In this study, we have fabricated vertical type Organic Static Induction Transistors (SITs) using pentacene, 6,13-Dinaphthalen-1-ly-Pentacene (1-DNP, 3), and 6,13-Dinaphthalen-2- ly-Pentacene (2-DNP, 4). 1-DNP and 2-DNP have same naphtyl group with pentacene, but different linked position and spatial arrangement. We have checked the static characteristics of materials in vertical type SITs device. We found that pentacene has as on/off ratio of 14.56, 1-DNP and 2-DNP shows as on/off ratio of 36.58 and 6.61 at VDS = 2V in SIT, respectively.

유기 TFT로 구동한 유기 인광발광소자의 연구 (Organic Electrophosphorescent Device driven by Organic Thin-Film Transistor)

  • 김윤명;표상우;김준호;심재훈;정태형;김영관;김정수
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 추계학술대회 논문집
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    • pp.312-315
    • /
    • 2001
  • Recently organic electroluminescent devices have been intensively investigated for using in full-color flat-panel display. Since the quantum efficiency of electrophosphorescent device decrease rapidly as the luminance increase, it is desirable to operate the electrophosphorescent display with active matrix rather than passive matrix. Here we report the study of driving electrophosphorescent diode with all organic thin film transistor(OTFT). The structure of electrophosphorescent diode is ITO/TPD/BCP:Ir(ppy)$_3$/BCP/Alq$_3$/Li:Al/Al. In OTFT, Polymer is used as an insulator and pentacene as an active layer. Detailed performance of the integrated device will be discussed.

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