Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Polysilicon Thin Film Transistor for Improving Reliability using by LDD Structure

  • Jung, Eun-Sik (Dept. of Electronics Engineering. Dongeul University) ;
  • Jang, Won-Su (Dept. of Electronics Engineering. Dongeul University) ;
  • Bea, Ji-Chel (Delft University of Technology) ;
  • Lee, Young-Jae (Dept. of Electronics Engineering. Dongeul University)
  • Published : 2002.07.01
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Abstract

In this paper, Amorphous silicon on glass substrate was recrystallized to poly-crystalline silicon by solid phase crystallization (SPC) technology. The active region of thin film transistor (TFT) was fabricated by amorphous silicon. The output and transfer characteristics of thin film transistor with lightly doped drain (LDD) structure was measured and analyzed. As a results, analyzed TFTs reliability with LDD's length by various kinds argument such as sub-threshold swing coefficient, mobility and threshold voltages were evaluated. Stress effects in TFT were able to improve to the characteristics of turn-on current and hot carrier effects by LDD's length variations.

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