• Journal of the Korean Crystal Growth and Crystal Technology
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• v.4 no.2
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• pp.119-130
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• 1994

To deposit silicon on borosilicate glass substrates, 18 different substrate combinations were investigated because of the difficulty of direct deposition of silicon. Sucessful results were obtained from Al-and Mg-treated glass and furnace annealed sputtered silicon deposited glass substrates. A continuous silicon thin film on a large area substrates was obtained in the temperatures ranges from $420^{\circ}C to 520^{\circ}C$. These thin films might be applied to lower the cost of solar cells and solar cell modules.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.254-255
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• 2012

Interest in nano-crystalline silicon (nc-Si) thin films has been growing because of their favorable processing conditions for certain electronic devices. In particular, there has been an increase in the use of nc-Si thin films in photovoltaics for large solar cell panels and in thin film transistors for large flat panel displays. One of the most important material properties for these device applications is the macroscopic charge-carrier mobility. Hydrogenated amorphous silicon (a-Si:H) or nc-Si is a basic material in thin film transistors (TFTs). However, a-Si:H based devices have low carrier mobility and bias instability due to their metastable properties. The large number of trap sites and incomplete hydrogen passivation of a-Si:H film produce limited carrier transport. The basic electrical properties, including the carrier mobility and stability, of nc-Si TFTs might be superior to those of a-Si:H thin film. However, typical nc-Si thin films tend to have mobilities similar to a-Si films, although changes in the processing conditions can enhance the mobility. In polycrystalline silicon (poly-Si) thin films, the performance of the devices is strongly influenced by the boundaries between neighboring crystalline grains. These grain boundaries limit the conductance of macroscopic regions comprised of multiple grains. In much of the work on poly-Si thin films, it was shown that the performance of TFTs was largely determined by the number and location of the grain boundaries within the channel. Hence, efforts were made to reduce the total number of grain boundaries by increasing the average grain size. However, even a small number of grain boundaries can significantly reduce the macroscopic charge carrier mobility. The nano-crystalline or polymorphous-Si development for TFT and solar cells have been employed to compensate for disadvantage inherent to a-Si and micro-crystalline silicon (${\mu}$-Si). Recently, a novel process for deposition of nano-crystralline silicon (nc-Si) thin films at room temperature was developed using neutral beam assisted chemical vapor deposition (NBaCVD) with a neutral particle beam (NPB) source, which controls the energy of incident neutral particles in the range of 1~300 eV in order to enhance the atomic activation and crystalline of thin films at room temperature. In previous our experiments, we verified favorable properties of nc-Si thin films for certain electronic devices. During the formation of the nc-Si thin films by the NBaCVD with various process conditions, NPB energy directly controlled by the reflector bias and effectively increased crystal fraction (~80%) by uniformly distributed nc grains with 3~10 nm size. The more resent work on nc-Si thin film transistors (TFT) was done. We identified the performance of nc-Si TFT active channeal layers. The dependence of the performance of nc-Si TFT on the primary process parameters is explored. Raman, FT-IR and transmission electron microscope (TEM) were used to study the microstructures and the crystalline volume fraction of nc-Si films. The electric properties were investigated on Cr/SiO2/nc-Si metal-oxide-semiconductor (MOS) capacitors.

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.72.1-72.1
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• 2010

Thin film a-Si solar cells deposited by PECVD have many advantages compared to the traditional crystalline Si solar cells. They do not require expensive Si wafer, the process temperature is relatively low, possibility of scaling up for mass production, etc. In order to produce thin film solar cells, understanding the relationship between the material characteristics and deposition conditions is important. It has been reported by many groups that the band gap of the a-Si material and the deposition rate has an linear relationship, when RF power is used to control both. However, when the process pressure is changed in order to control the deposition rate and the band gap, a diversion from the well known linear relationship occurs. Here, we explain this diversion by the deposition condition crossing different plasma regions in the Paschen curve with a simple model. This model will become a guide to which condition a-Si thin films must be fabricated in order to get a high quality film.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.04a
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• pp.57-58
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• 2008

Microcrystalline (${\mu}c$) silicon thin films were prepared on glass by plasma-enhanced-chemical-vapor-deposition (PECVD) at various substrate temperature, and dilution ratio of $H_2$ with $SiH_4$. The structural and optical properties of. the ${\mu}c-Si$ thin films were investigated using XRD and UV-VIS spectrophotometer. The ${\mu}c-Si$ thin film with 42 nm grain size was grown at optimal condition of 2.5 Torr, spacing between electrodes of 3cm, deposition time of 3000s, RF power of 200W, substrate temperature of $350^{\circ}C$, $SiH_4$ ($20%SiH_4$+80%He) of 50sccm, and $H_2$ of 100sccm.

• Transactions on Electrical and Electronic Materials
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• v.17 no.2
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• pp.98-103
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• 2016

The surface morphology of the front transparent conductive oxide (TCO) films plays a vital role in amorphous silicon thin film solar cells (a-Si TFSCs) due to their high transparency, conductivity and excellent light scattering properties. Recently, plasma textured glass surface morphologies received much attention for light trapping in a-Si TFSCs. We report various plasma textured glass surface morphologies for the high efficiency of a-Si TFSCs. Plasma textured glass surface morphologies showed high rms roughness, haze ratio with micro- and nano size surface features and are proposed for future high efficiency of a-Si TFSCs.

• Korean Journal of Materials Research
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• v.20 no.10
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• pp.501-507
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• 2010

Changes in surface morphology and roughness of dc sputtered ZnO:Al/Ag back reflectors by varying the deposition temperature and their influence on the performance of flexible silicon thin film solar cells were systematically investigated. By increasing the deposition temperature from $25^{\circ}C$ to $500^{\circ}C$, the grain size of Ag thin films increased from 100 nm to 1000 nm and the grain size distribution became irregular, which resulted in an increment of surface roughness from 6.6 nm to 46.6 nm. Even after the 100 nm thick ZnO:Al film deposition, the surface morphology and roughness of the ZnO:Al/Ag double structured back reflectors were the same as those of the Ag layers, meaning that the ZnO:Al films were deposited conformally on the Ag films without unnecessary changes in the surfacefeatures. The diffused reflectance of the back reflectors improved significantly with the increasing grain size and surface roughness of the Ag films, and in particular, an enhanced diffused reflectance in the long wavelength over 800 nm was observed in the Ag back reflectors deposited at $500^{\circ}C$, which had an irregular grain size distribution of 200-1000 nm and large surface roughness. The improved light scattering properties on the rough ZnO:Al/Ag back reflector surfaces led to an increase of light trapping in the solar cells, and this resulted in a noticeable improvement in the $J_{sc}$ values from 9.94 mA/$cm^2$ for the flat Ag back reflector at $25^{\circ}C$ to 13.36 mA/$cm^2$ for the rough one at $500^{\circ}C$. A conversion efficiency of 7.60% ($V_{oc}$ = 0.93, $J_{sc}$ = 13.36 mA/$cm^2$, FF = 61%) was achieved in the flexible silicon thin film solar cells at this moment.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.20 no.6
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• pp.254-261
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• 2010

Polycrystalline silicon (pc-Si) films are fabricated and characterized for application to pc-Si thin film solar cells as a seed layer. The amorphous silicon films are crystallized by the aluminum-induced layer exchange (ALILE) process with a structure of glass/Al/$Al_2O_3$/a-Si using various thicknesses of $Al_2O_3$ layers. In order to investigate the effects of the oxide layer on the crystallization of the amorphous silicon films, such as the crystalline film detects and the crystal grain size, the $Al_2O_3$ layer thickness arc varied from native oxide to 50 nm. As the results, the defects of the poly crystalline films are increased with the increase of $Al_2O_3$ layer thickness, whereas the grain size and crystallinity are decreased. In this experiments, obtained the average pc-Si sub-grain size was about $10\;{\mu}m$ at relatively thin $Al_2O_3$ layer thickness (${\leq}$ 16 nm). The preferential orientation of pc-Si sub-grain was <111>.

• Journal of the Semiconductor & Display Technology
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• v.18 no.3
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• pp.19-24
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• 2019

In this study, the Ag nano-dots structure was applied to the textured wafer surface to improve the light trapping effect of crystalline silicon solar cell. The Ag nano-dots structure was formed by the annealing of Ag thin film. Ag thin film deposition was performed using a thermal evaporator. The effect of light trapping was compared and analyzed through light reflectance measurements. The optimization process of the Ag nano-dots structure was made by varying the thickness of Ag thin film, the annealing temperature and time. The thickness of Ag thin films was in the range of 5 ~ 20 nm. The annealing temperature was in the range of 450~650℃ and the annealing time was in the range of 30 ~ 60 minutes. As a result, the light reflectance of 10 nm Ag thin film annealed at 650℃ for 30 minutes showed the lowest value of about 9.67%. This is a value that is about 3.37% lower than the light reflectance of the sample that has undergone only the texturing process. Finally, the change of the light reflectance by the HF treatment of the sample on which the Ag nano-dots structure was formed was investigated. The HF treatment time was in the range of 0 ~ 120 seconds. As a result, the light reflectance decreased by about 0.41% due to the HF treatment for 75 seconds.

• 한국신재생에너지학회:학술대회논문집
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• 2009.11a
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• pp.392-392
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• 2009

결정질 실리콘 태양전지의 모듈화에는 일반적으로 저철분 강화유리를 사용하고 있으며, 이 경우 모듈화를 위해서는 3-5mm 두께의 강화유리를 EVA film을 사용하여 유리와 solar cell을 접착하는 방법을 사용하고 있다. 본 연구에서는 0.7mm 두께의 강화 유리를 사용하고, EVA film을 사용하지 않는 방법으로 초경량의 모듈을 제작하고, 그 특성을 비교하였다. 그결과 박판강화유리를 이용한 경량 실리콘 태양전지의 모듈화의 가장 큰 문제점으로는 강화유리의 두께가 아주 얇기 때문에 발생하는 module의 bending 현상에 의한 silicon cell의 파괴가 일어나는 경우가 있었으며 이를 위한 bending 방지기술의 개발이 요구되는 것으로 나타났다. 개선효과로는 솔라셀 모듈의 에너지변환효율은 동일한 솔라셀을 사용하여 일반 3mm 급의 저철분강화유리로 제작한 모듈에 비해서 약 20% 개선효과가 있었으며, 경량화에는 Al계 금속 지지대를 제외한 모듈만을 비교하여 무게의 감량을 비교한 결과 70%이상의 감량 효과를 나타내는 것으로 나타났다. 상기 결과로부터 본 연구를 통한 개발품은 BIPV형 solar cell module로 이용가치가 기대된다.

• The Journal of the Korea Contents Association
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• v.22 no.7
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• pp.55-62
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• 2022

The perovskite solar cell is an active part of research in renewable energy fields such as solar energy, wind, hydroelectric power, marine energy, bioenergy, and hydrogen energy to replace fossil fuels such as oil, coal, and natural gas, which will gradually disappear as power demand increases due to the increase in use of the Internet of Things and Virtual environments due to the 4th industrial revolution. The perovskite solar cell is a solar cell device using an organic-inorganic hybrid material having a perovskite structure, and has advantages of replacing existing silicon solar cells with high efficiency, low cost solutions, and low temperature processes. In order to optimize the light absorption layer thin film predicted by the existing empirical method, reliability must be verified through device characteristics evaluation. However, since it costs a lot to evaluate the characteristics of the light-absorbing layer thin film device, the number of tests is limited. In order to solve this problem, the development and applicability of a clear and valid model using machine learning or artificial intelligence model as an auxiliary means for optimizing the light absorption layer thin film are considered infinite. In this study, to estimate the light absorption layer thin-film optimization of perovskite solar cells, the regression models of the support vector machine's linear kernel, R.B.F kernel, polynomial kernel, and sigmoid kernel were compared to verify the accuracy difference for each kernel function.