• Korean Journal of Materials Research
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• v.27 no.11
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• pp.577-582
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• 2017

Self-cleaning and photocatalytic $TiO_2$ thin films were prepared by a facile sol-gel method followed by spin coating using peroxo titanic acid as a precursor. The as-prepared thin films were heated at low temperature($110^{\circ}C$) and high temperature ($400^{\circ}C$). Thin films were characterized by X-ray diffraction(XRD), Field-emission scanning electron microscopy(FESEM), UV-Visible spectroscopy and water contact angle measurement. XRD analysis confirms the low crystallinity of thin films prepared at low temperature, while crystalline anatase phase was found the for high temperature thin film. The photocatalytic activity of thin films was studied by the photocatalytic degradation of methylene blue dye solution. Self-cleaning and photocatalytic performance of both low and high temperature thin films were compared.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.998-1000
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• 2003

We have investigated thin film morphology of pentacene thin films by the process of low-pressure gas assisted organic vapor deposition (LP-GAOVD). Source temperature, inert gas flow rate, substrate temperature and deposition pressure during film deposition is used to vary the growth rate, thin film morphology and the crystalline grain size of pentacene thin films. The electrical properties of pentacene thin films for applications in organic thin film transistor and electrophoretic displays will be discussed.

• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.1049-1052
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• 2003

This study shows the change of the structural characteristic of AIN thin film deposition with the change of the deposition conditions such as Ar/$N_2$ gas ratio, operating pressure in chamber, and the distance between substrate and target in RF Magnetron Sputtering. The orientation and surface roughness of AIN thin film are studied by using XRD and AFM and the thickness is measured by using STYLUS PROFILER. While we can not identify the orientation of the thin film deposited in Ar only, we can obtain the (100) orientation of the thin film with the addition of $N_2$ to Ar. Especially the thin film deposited at 10% of Ar/$N_2$ gas ratio appears to be the most (100) oriented. The (100) orientation of thin film becomes weaker as the operating pressure becomes higher. The further distance between substrate and target is stronger the (100) orientation of the thin film is. The (100) orientation becomes weaker and (002) orientation starts to appear as the distance is shorter.

• Structural Engineering and Mechanics
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• v.57 no.3
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• pp.389-402
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• 2016

Based on the traditional mechanical model of thin-walled straight beam, the paper makes analysis and research on the pre-twisted thin-walled beam finite element numerical model. Firstly, based on the geometric deformation differential relationship, the Saint-Venant warping strain of pre-twisted thin-walled beam is deduced. According to the traditional thin-walled straight beam finite element mechanical model, the finite element stiffness matrix considering the Saint-Venant warping deformations is established. At the same time, the paper establishes the element stiffness matrix of the pre-twisted thin-walled beam based on the classic Vlasov Theory. Finally, by calculating the pre-twisted beam with elliptical section and I cross section and contrasting three-dimensional solid finite element using ANSYS, the comparison analysis results show that pre-twisted thin-walled beam element stiffness matrix has good accuracy.

• Journal of Sensor Science and Technology
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• v.16 no.3
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• pp.229-233
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• 2007

The indium tin oxide (ITO) films were deposited on CR39 substrate using DC magnetron sputtering. The ITO thin films deposited at room temperature because CR39 substrate its glass-transition temperature is $130^{\circ}C$. The ITO thin films used bottom and top electrode and for organic thin film transparent transistors (OTFTs). The ITO thin film electrodes electrical properties and optical transparency properties in the visible wavelength range (300-800 nm) strongly dependent on volume of oxygen percent. For the optimum resistivity and transparency of the ITO thin film electrode achieved with a 75 W plasma power, 10 % volume of oxygen and a 27 nm/min deposition rate. Above 85 % transparency in the visible wavelength range (300-800 nm) measured without post annealing process and a low resistivity value $9.83{\times}10^{-4}{\Omega}cm$ was measured thickness of 300 nm. All fabrication process of ITO thin films did not exceed $80^{\circ}C$.

• Proceedings of the Korean Vacuum Society Conference
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• 2006.02a
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• pp.185-185
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• 2006

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2008.10a
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• pp.720-723
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• 2008

RUPI-based robot service provides a variety of robot services guaranteeing extensibility and flexibility by communications between heterogeneous robots and servers. Unlike rich-client robot of high H/W performance and computing ability, as thin-client robot supports limited capability, it has some difficulty in performing security algorithms requiring relatively high computation power. Therefore, in this paper, we propose security framework of thin-client robot containing security threats, security requirements, and security functions.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.173.2-173.2
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• 2014

Thin nitride thin films were synthesized by reactive radio-frequency magnetron sputtering in the ultra high vacuum (UHV) chamber. To control the characteristics of thin films, tin nitride thin films were obtained various argon and nitrogen gas mixtures, especially low nitrogen gas ratios. Tin nitride thin films were analyzed with alpha step, scanning electron microscopy (SEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and 4 point probe measurement. The result of alpha step and SEM showed that the thickness of thin nitride thin films were decreased with increasing nitrogen gas ratios. The metallic tin structure was decreased and the amorphous tin nitride structure were observed by XRD with higher nitrogen gas ratios. The oxidation state of tin and nitride were studied with high resolution Sn 3d and N 1s XP spectra.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 1997.04a
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• pp.701-708
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• 1997

A direct boundary element method(DBEM) is developed for thin bodies whose surfaces are rigid or compliant. Th eHelmholtz integral equation and its normal derivative integral equation are adopted simultaneously to calculate the pressure on both sides of the thin body, instead of the jump values across it, to account for the different surface conditions of each side. Unlike the usual assumption, the normal velocity is assumed to be discontinuous across the thin body. In this approach, only the neutral surface of the thin body has to be discontinuous across the thin body. In this approach, only the neural surface of the thin body has to be discretized. The method is validated by comparison with analytic and/or numerical results for acoustic scattering and radiation from several surface conditions of the thin body; the surfaces are rigid when stationary or vibrating, and part of the interior surface is lined with a sound-absorbing material.

• Journal of the Semiconductor & Display Technology
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• v.2 no.4
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• pp.31-35
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• 2003

We present a formation technique of thin film heater for heat transfer components. Thin film structures of Cr-Si have been prepared on top of alumina substrates by magnetron sputtering. More samples of Mo thin films were prepared on silicon oxide and silicon nitride substrates by electron beam evaporation technology. The electrical properties of the thin film structures were measured up to the temperature of $500^{\circ}C$. The thickness of the thin films was ranged to about 1 um, and a post annealing up to $900^{\circ}C$ was carried out to achieve more reliable film structures. In measurements of temperature coefficient of resistance (TCR), chrome-rich films show the metallic properties; whereas silicon-rich films do the semiconductor properties. Optimal composition between Cr and Si was obtained as 1 : 2, and there is 20% change or less of surface resistance from room temperature to $500^{\circ}C$. Scanning electron microscopy (SEM) and Auger electron spectroscopy (AES) were used for the material analysis of the thin films.